TW200722929A - Fabrication method for photomask, fabrication method for device and monitoring method for photomask - Google Patents

Fabrication method for photomask, fabrication method for device and monitoring method for photomask

Info

Publication number
TW200722929A
TW200722929A TW095110297A TW95110297A TW200722929A TW 200722929 A TW200722929 A TW 200722929A TW 095110297 A TW095110297 A TW 095110297A TW 95110297 A TW95110297 A TW 95110297A TW 200722929 A TW200722929 A TW 200722929A
Authority
TW
Taiwan
Prior art keywords
photomask
fabrication method
fabrication
formed over
pattern
Prior art date
Application number
TW095110297A
Other languages
Chinese (zh)
Other versions
TWI322328B (en
Inventor
Koji Hosono
Yukihiro Sato
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200722929A publication Critical patent/TW200722929A/en
Application granted granted Critical
Publication of TWI322328B publication Critical patent/TWI322328B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A fabrication method for a photomask is disclosed. Two or more metal layers (2, 3) are formed over a substrate (1), and a main pattern (5) and a monitor pattern (6) are formed over one or more ones of the two or more metal layers (2, 3) other than the lowermost metal layer (2). Then, the monitor pattern (6) is measured, and the monitor pattern (6) after measured is removed. Then, the main pattern (5) is formed over the lowermost metal layer (2) to fabricate a photomask formed from the two or more metal layers (2, 3).
TW095110297A 2005-12-14 2006-03-24 Fabrication method for photomask, fabrication method for device and monitoring method for photomask TWI322328B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005360526A JP4843304B2 (en) 2005-12-14 2005-12-14 Photomask manufacturing method, device manufacturing method, and photomask monitoring method

Publications (2)

Publication Number Publication Date
TW200722929A true TW200722929A (en) 2007-06-16
TWI322328B TWI322328B (en) 2010-03-21

Family

ID=36499574

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110297A TWI322328B (en) 2005-12-14 2006-03-24 Fabrication method for photomask, fabrication method for device and monitoring method for photomask

Country Status (7)

Country Link
US (1) US7666553B2 (en)
EP (1) EP1798595B1 (en)
JP (1) JP4843304B2 (en)
KR (1) KR100782489B1 (en)
CN (1) CN1983025B (en)
DE (1) DE602006001193D1 (en)
TW (1) TWI322328B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414881B (en) * 2009-10-14 2013-11-11
TWI497191B (en) * 2010-09-30 2015-08-21 Ｈｏｙａ股份有限公司 Mask base, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2169070B1 (en) 2007-06-21 2015-06-10 National University Corporation Nagoya University Method for introducing foreign substance into cell having cell wall
US7812370B2 (en) 2007-07-25 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
JP2009128618A (en) * 2007-11-22 2009-06-11 Fujitsu Microelectronics Ltd Photomask and manufacturing method thereof
KR100980060B1 (en) 2008-06-20 2010-09-03 주식회사 하이닉스반도체 Photomask Inspection
US7834345B2 (en) * 2008-09-05 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistors with superlattice channels
US8587075B2 (en) * 2008-11-18 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with metal source
JP5666218B2 (en) * 2009-10-06 2015-02-12 Hoya株式会社 Mask blank, transfer mask, and transfer mask set
JP5573306B2 (en) * 2010-03-31 2014-08-20 凸版印刷株式会社 Photomask blank manufacturing method
CN102509726A (en) * 2011-11-14 2012-06-20 上海宏力半导体制造有限公司 IP (Intellectual Property) module with encryption structures and manufacturing method of IP module
KR102145884B1 (en) 2012-12-24 2020-08-20 삼성디스플레이 주식회사 Reticle, exposing apparatus including the same, and exposing method
JP6189242B2 (en) * 2014-03-28 2017-08-30 Hoya株式会社 Photomask manufacturing method, photomask and display device manufacturing method
KR102606308B1 (en) * 2016-06-28 2023-11-24 삼성전자주식회사 Method of manufacturing photomasks, method of forming patterns and method of manufacturing semiconductor devices
KR102504179B1 (en) * 2017-12-21 2023-02-28 에스케이하이닉스 주식회사 Photomask including shading layer and method forming patterns using the same
JP7214593B2 (en) * 2019-08-13 2023-01-30 キオクシア株式会社 Photomask manufacturing method
JP7547305B2 (en) 2021-11-11 2024-09-09 信越化学工業株式会社 Photomask blank, photomask manufacturing method and photomask

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100215850B1 (en) * 1996-04-12 1999-08-16 구본준 Half-tone phase shift mask and fabrication method thereof
US6440613B1 (en) * 1999-09-02 2002-08-27 Micron Technology, Inc. Method of fabricating attenuated phase shift mask
JP3715189B2 (en) 2000-09-21 2005-11-09 株式会社ルネサステクノロジ Phase shift mask
JP4053723B2 (en) 2000-09-27 2008-02-27 株式会社東芝 Method for manufacturing exposure mask
JP2002323746A (en) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd Phase shift mask and hole pattern forming method using the same
JP3650055B2 (en) * 2001-10-12 2005-05-18 Ｈｏｙａ株式会社 Correction method for halftone phase shift mask
JP2003344987A (en) 2002-05-24 2003-12-03 Sony Corp Method for measuring eaves of phase shift mask
JP3793147B2 (en) * 2002-12-04 2006-07-05 株式会社東芝 Reticle set, reticle set design method, exposure monitor method, reticle set inspection method, and semiconductor device manufacturing method
JP2004212482A (en) 2002-12-27 2004-07-29 Fujitsu Ltd Photomask manufacturing method
JP4450743B2 (en) * 2005-02-08 2010-04-14 富士通マイクロエレクトロニクス株式会社 Photomask, photomask manufacturing method, and semiconductor device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414881B (en) * 2009-10-14 2013-11-11
TWI497191B (en) * 2010-09-30 2015-08-21 Ｈｏｙａ股份有限公司 Mask base, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
CN1983025A (en) 2007-06-20
EP1798595B1 (en) 2008-05-14
US20070134562A1 (en) 2007-06-14
KR20070063397A (en) 2007-06-19
EP1798595A1 (en) 2007-06-20
US7666553B2 (en) 2010-02-23
TWI322328B (en) 2010-03-21
KR100782489B1 (en) 2007-12-05
JP2007163867A (en) 2007-06-28
CN1983025B (en) 2011-07-27
JP4843304B2 (en) 2011-12-21
DE602006001193D1 (en) 2008-06-26

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