TW200746366A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
TW200746366A
TW200746366A TW095137126A TW95137126A TW200746366A TW 200746366 A TW200746366 A TW 200746366A TW 095137126 A TW095137126 A TW 095137126A TW 95137126 A TW95137126 A TW 95137126A TW 200746366 A TW200746366 A TW 200746366A
Authority
TW
Taiwan
Prior art keywords
film
type impurity
silicon nitride
region
gate trenches
Prior art date
Application number
TW095137126A
Other languages
English (en)
Other versions
TWI335641B (en
Inventor
Shigeru Shiratake
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Publication of TW200746366A publication Critical patent/TW200746366A/zh
Application granted granted Critical
Publication of TWI335641B publication Critical patent/TWI335641B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW095137126A 2005-10-11 2006-10-05 Method for manufacturing semiconductor device TWI335641B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005296079 2005-10-11
JP2006228554A JP2007134674A (ja) 2005-10-11 2006-08-25 半導体装置の製造方法及び半導体装置

Publications (2)

Publication Number Publication Date
TW200746366A true TW200746366A (en) 2007-12-16
TWI335641B TWI335641B (en) 2011-01-01

Family

ID=37911469

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137126A TWI335641B (en) 2005-10-11 2006-10-05 Method for manufacturing semiconductor device

Country Status (3)

Country Link
US (1) US7709324B2 (zh)
JP (1) JP2007134674A (zh)
TW (1) TWI335641B (zh)

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JP4773182B2 (ja) * 2005-10-28 2011-09-14 エルピーダメモリ株式会社 半導体装置の製造方法
US7745876B2 (en) * 2007-02-21 2010-06-29 Samsung Electronics Co., Ltd. Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
JP2009021502A (ja) * 2007-07-13 2009-01-29 Elpida Memory Inc 半導体装置およびその製造方法
KR100919576B1 (ko) * 2007-10-17 2009-10-01 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
US20090159966A1 (en) * 2007-12-20 2009-06-25 Chih-Jen Huang High voltage semiconductor device, method of fabricating the same, and method of fabricating the same and a low voltage semiconductor device together on a substrate
KR20090087645A (ko) * 2008-02-13 2009-08-18 삼성전자주식회사 리세스 채널 어레이 트랜지스터를 구비하는 반도체 소자의제조 방법
JP2009231772A (ja) 2008-03-25 2009-10-08 Nec Electronics Corp 半導体装置の製造方法および半導体装置
JP2010021295A (ja) 2008-07-09 2010-01-28 Nec Electronics Corp 半導体装置およびその製造方法
KR101561061B1 (ko) * 2009-04-10 2015-10-16 삼성전자주식회사 돌출형 소자 분리막을 가지는 반도체 소자
JP5515434B2 (ja) * 2009-06-03 2014-06-11 ソニー株式会社 半導体装置及びその製造方法、固体撮像素子
US7994576B2 (en) * 2009-06-22 2011-08-09 United Microelectronics Corp. Metal gate transistor and resistor and method for fabricating the same
US20110108912A1 (en) * 2009-11-09 2011-05-12 Hamilton Lu Methods for fabricating trench metal oxide semiconductor field effect transistors
KR20110082387A (ko) * 2010-01-11 2011-07-19 삼성전자주식회사 반도체 소자의 형성방법 및 이에 의해 형성된 반도체 소자
JP5662865B2 (ja) * 2010-05-19 2015-02-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8754472B2 (en) 2011-03-10 2014-06-17 O2Micro, Inc. Methods for fabricating transistors including one or more circular trenches
US8643101B2 (en) 2011-04-20 2014-02-04 United Microelectronics Corp. High voltage metal oxide semiconductor device having a multi-segment isolation structure
US8581338B2 (en) 2011-05-12 2013-11-12 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
US8501603B2 (en) 2011-06-15 2013-08-06 United Microelectronics Corp. Method for fabricating high voltage transistor
US8592905B2 (en) 2011-06-26 2013-11-26 United Microelectronics Corp. High-voltage semiconductor device
CN102956561B (zh) * 2011-08-19 2014-11-05 中芯国际集成电路制造(上海)有限公司 内嵌式存储器件的形成方法
US20130043513A1 (en) 2011-08-19 2013-02-21 United Microelectronics Corporation Shallow trench isolation structure and fabricating method thereof
US8729599B2 (en) 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8716077B2 (en) * 2011-08-23 2014-05-06 Globalfoundries Inc. Replacement gate compatible eDRAM transistor with recessed channel
US8921937B2 (en) 2011-08-24 2014-12-30 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
US8742498B2 (en) 2011-11-03 2014-06-03 United Microelectronics Corp. High voltage semiconductor device and fabricating method thereof
US8482063B2 (en) 2011-11-18 2013-07-09 United Microelectronics Corporation High voltage semiconductor device
US8587058B2 (en) 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
US8492835B1 (en) 2012-01-20 2013-07-23 United Microelectronics Corporation High voltage MOSFET device
US9093296B2 (en) 2012-02-09 2015-07-28 United Microelectronics Corp. LDMOS transistor having trench structures extending to a buried layer
TWI523196B (zh) 2012-02-24 2016-02-21 聯華電子股份有限公司 高壓金氧半導體電晶體元件及其佈局圖案
US8890144B2 (en) 2012-03-08 2014-11-18 United Microelectronics Corp. High voltage semiconductor device
US9236471B2 (en) 2012-04-24 2016-01-12 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9159791B2 (en) 2012-06-06 2015-10-13 United Microelectronics Corp. Semiconductor device comprising a conductive region
US8836067B2 (en) 2012-06-18 2014-09-16 United Microelectronics Corp. Transistor device and manufacturing method thereof
US8674441B2 (en) 2012-07-09 2014-03-18 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8643104B1 (en) 2012-08-14 2014-02-04 United Microelectronics Corp. Lateral diffusion metal oxide semiconductor transistor structure
US8729631B2 (en) 2012-08-28 2014-05-20 United Microelectronics Corp. MOS transistor
US9196717B2 (en) 2012-09-28 2015-11-24 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8829611B2 (en) 2012-09-28 2014-09-09 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8704304B1 (en) 2012-10-05 2014-04-22 United Microelectronics Corp. Semiconductor structure
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
US9224857B2 (en) 2012-11-12 2015-12-29 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9035425B2 (en) 2013-05-02 2015-05-19 United Microelectronics Corp. Semiconductor integrated circuit
US8896057B1 (en) 2013-05-14 2014-11-25 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US8786362B1 (en) 2013-06-04 2014-07-22 United Microelectronics Corporation Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8941175B2 (en) 2013-06-17 2015-01-27 United Microelectronics Corp. Power array with staggered arrangement for improving on-resistance and safe operating area
US9136375B2 (en) 2013-11-21 2015-09-15 United Microelectronics Corp. Semiconductor structure
US9490360B2 (en) 2014-02-19 2016-11-08 United Microelectronics Corp. Semiconductor device and operating method thereof
KR102546659B1 (ko) 2015-12-11 2023-06-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11502181B2 (en) * 2019-11-08 2022-11-15 Nanya Technology Corporation Semiconductor device and method for fabricating the same
KR20240118582A (ko) * 2023-01-27 2024-08-05 삼성전자주식회사 커패시터 및 이를 포함하는 디바이스

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JP3150496B2 (ja) 1993-06-30 2001-03-26 株式会社東芝 半導体記憶装置
JP2751909B2 (ja) 1996-02-26 1998-05-18 日本電気株式会社 半導体装置の製造方法
US6265282B1 (en) * 1998-08-17 2001-07-24 Micron Technology, Inc. Process for making an isolation structure
JP4860022B2 (ja) * 2000-01-25 2012-01-25 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP4932088B2 (ja) * 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
JP4319809B2 (ja) 2002-06-05 2009-08-26 株式会社デンソー 半導体装置の製造方法
US6913946B2 (en) * 2003-06-13 2005-07-05 Aptos Corporation Method of making an ultimate low dielectric device
JP2005142203A (ja) 2003-11-04 2005-06-02 Elpida Memory Inc 半導体装置およびその製造方法
US7344934B2 (en) * 2004-12-06 2008-03-18 Infineon Technologies Ag CMOS transistor and method of manufacture thereof
US7226840B2 (en) * 2005-07-25 2007-06-05 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements

Also Published As

Publication number Publication date
US7709324B2 (en) 2010-05-04
JP2007134674A (ja) 2007-05-31
TWI335641B (en) 2011-01-01
US20070082440A1 (en) 2007-04-12

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