200917601 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種垂直發射方向中發出輻射的半導體組件 及其製造方法。 【先前技術】 垂直發射方向中達成光學泵送的半導體雷射，例如，晶 圓雷射’有時在雷射內部中具有高的吸收損耗，此晶圓雷 射是與一種泵雷射以緊密的造型而一起構成。 【發明內容】 本發明的目的是提供一種垂直發射方向中發出輻射的半 導體組件，其與一種泵雷射以緊密的造型而一起構成且具 有較佳的特性。此外，本發明提供一種發出輻射的半導體 組件的製造方法。 上述目的藉由申請專利範圍獨立項之半導體組件或製造 方法來達成。本發明有利的佈置和其它形式描述在申請專 利範圍各附屬項中。 依據一實施形式，垂直發射方向中發出輻射的半導體組 件具有一種半導體本體，其包括半導體層序列。半導體層 序列中形成一用來產生一泵輻射的泵區。泵區上配置一用 來產生輻射的發射區。半導體組件中形成一耦合結構。 該垂直的發射方向垂直於半導體層序列之半導體層之主 延伸方向而延伸。在該發出輻射的半導體組件操作時’泵 輻射藉由該耦合結構而入射至該發射區中。泵區和該發射 200917601 區互相重疊而配置著，這樣可使該發出輻射的半導體組件 的緊密造型簡化。泵區和該發射區可廣泛地互相獨立而設 計。輻射產生的效率因此可提高。 所謂耦合結構特別是指一種在橫向（即，半導體本體之半 導體層的主延伸面中）中延伸的結構，所入射的輻射之一部 份在該結構上由於反射、散射及/或繞射而轉向至一種與原 來方向不同的方向中。此外，該耦合結構較佳是在橫向中 〇 具有多個相鄰而配置的結構元件。各結構元件較佳是具有 一種在波長範圍內的結構大小，其大約是在半導體本體之 材料中的泵輻射之波長的0.1倍（含）至20倍（含）之間。 在半導體組件操作時，泵輻射較佳是在橫向中傳送。泵 輻射和一種發射輻射因此是在互相不同（特別是互相垂直） 的方向中傳送。此外，該耦合結構是用來使橫向中所傳送 的栗輻射的一部份入射至該發射區中。 在一較佳的另一形式中，該親合結構用來將橫向中所傳 1 送的泵輻射的一部份轉向至一種與該橫向成傾斜或垂直而 延伸的方向中，特別是轉向至該發射區中。藉由該耦合結 構，則可對泵輻射造成影響，使該泵輻射的一部份的傳送 方向改變。泵輻射的此種已轉向的成份具有一種波向量， 其顯示在一種與原來的橫向不同的方向中。泵輻射的此種 已轉向的成份之波向量由半導體本體之半導體層之主延伸 面中突出而顯示出來。 在一有利的佈置中，該泵區在橫向中至少以區域方式超 -6- 200917601 過該發射區而突出。在該發出輻射的半導體組件之俯視圖 中，該泵區因此只以區域方式而由該發射區所覆蓋。因此， 較高的輻射功率之泵輻射之有效的產生可簡單地達成。 此外，須配置該耦合結構，使藉由該耦合結構而轉向至 垂直方向中的輻射直接到達該發射區中。適當的方式是使 該耦合結構在該發出輻射的半導體組件的俯視圖上較佳是 完全與該發射區重疊。因此，該發射區之有效的光學泵可 被簡化。 泵輻射在半導體組件操作時較佳是藉由該耦合結構上的 反射及/或繞射而入射至該發射區中。入射至該發射區中的 栗輻射較佳是主要（大約是至少50%的強度）在與垂直方向 最多成20度的角度中傳送。 入射至該發射區中的泵輻射可對該發射區進行光學泵 送。在光學泵送的發射區中’較佳是產生相參的輻射，其 具有一預設的發射波長。 在一較佳的佈置中，該耦I合結構配置在該栗區之遠離該 發射區之此側上。此種耦合結構相較於配置在泵區和該發 射區之間的耦合結構而言可簡易地製成。 此處，該耦合結構較佳是用來在反射時操作，即，入射 至該耦合結構上且在該耦合結構上反射-或繞射的輻射成份 主要是在該耦合結構之同一側上傳送。 在另一較佳的佈置中，該親合結構沿著橫向而周期地或 至少大部份是周期地形成。大部份是周期地形成的耦合結 200917601 構亦稱爲準（quasi)周期結構。 就周期-或準周期之賴合結構之周期長度L而言，即，就 該親合結構之基本結構重複時的長度而言，較佳是滿足： (N-0.4) · λ ^ (N + 0.4) · λ 其中Ν是正整數且λ是耦合結構之區域中該泵輻射之波 長’即，真空中的波長除以該耦合結構之區域中的折射率 後所得的波長。 在準周期的耦合結構中，該周期長度等於各結構元件之 平均距離’其中相鄰的各結構元件至少一部份配置在與周 期長度不同的距離中。 特別是該耦合結構可形成一繞射柵格，較佳是一種一維 度之繞射柵格。 繞射波ks之波長向量是由以下的等式所示的所謂佈拉格 (B r a g g)條件來求出： k_s = -f (==」 其中k·是入射的輻射之波長向量且G是柵格向量的倒 數°在一維度的繞射柵格的情況中，G是柵格向量的倒數2 之値’其沿著繞射柵格而以條件g = 2 π /a來與繞射柵格之柵 格常數a相結合。k,是入射的波之波向量的値且ki = n . 2 π / 又-’其中η是此波傳送時所在的材料的折射率，且λ P是泵 輻射的真空波長。 在繞射成第一階（order)的輻射垂直於繞射柵格而傳送 時’即’對該波向量之沿著該繞射柵格而消失的成份（ks = 0) 200917601 而言，柵格常數是a= λ p /n。 一耦合結構的周期長度可等於該泵結構之區域中泵輻射 的波長，藉由此種耦合結構，則在橫向中傳送的泵輻射在 垂直方向中繞射成第一階。 該耦合結構的周期長度較佳是介於該耦合結構之區域中 的泵輻射之波長的0 · 6倍（含）至1.4倍（含）之間，這對應於 上述N=1時周期長度L之方程式。該耦合結構的周期長度 p 特別佳時是介於該合結構之區域中的泵輻射之波長的0.8 倍（含）至1.2倍（含）之間。 在另一種佈置中，該耦合結構依據一隨機（random)結構而 形成。在此種情況下，該耦合結構之各結構元件以可變的 距離而互相配置著，此時此種配置可以無周期。 在一較佳的另一形式中，該耦合結構藉由相鄰配置的凹 口而形成。特別是各凹口可周期地、準-周期地或依據一隨 機結構而配置著。 w 此外，各凹口之橫向尺寸較佳是介於周期長度之0.3倍（含） 至0.7倍（含）之間，特別是介於0.4倍（含）至0.6倍（含）之間， 例如，0.5倍。 此外，各凹口之橫向尺寸較佳是介於該稱合結構之區域 中的泵輻射之波長之0.3倍（含）至0.7倍（含）之間，特別是 介於0.4倍（含）至0.6倍（含）之間’例如，0.5倍。 又，各凹口較佳是以溝渠形式來形成。各凹口之主延伸 方向分別垂直於橫向和垂直於垂直之發射方向而延伸。以 -9- 200917601 此種方式，則可藉由凹口來形成一維度之繞射柵格。 在另一種佈置中，各凹口具有垂直延伸之側緣。各凹口 在橫向中可在二側上以垂直的側緣爲邊界，藉由這些凹 口，則可在各側緣上使橫向中傳送的泵輻射達成一特別尖 銳的折射率跳躍。 各凹口之橫截面實際上可具有任意的形式。特別是各凹 口可具有多角形或至少以區域方式彎曲的基本形式。此 . 外，該耦合結構可沿著橫向而被結構化或亦能以鋸齒形方 式而被結構化。 在另一較佳的佈置中，各凹口向半導體本體內部延伸。 各凹口因此至少一部份形成在半導體本體中。橫向中在半 導體本體中傳送的泵輻射因此可簡易地被該耦合結構所轉 向。 在另一較佳的佈置中，各凹口中至少一部份以一種塡料 來塡入。此塡料可適當地具有一種與半導體本體的折射率 ι.： 不同的折射率。此外’此塡料可透過該泵輻射。 又，此塡料含有一種介電質材料。例如，此塡料可含有 氧化物、氮化物或氧化氮化物或由這些材料所構成。 另一方式是，此塡料含有一種金屬。以此種方式，則該 稱合結構的反射率可提高。 在一較佳的佈置中，該耦合結構須在垂直方向中形成， 使泵輻射的一預定的成份入射至該發射區中。該耦合結構 在垂直方向中與泵輻射在垂直方向中的範圍的重疊區越 -10- 200917601 大，則入射至該發射區中的泵輪射之成汾越多°另一 ^® 該耦合結構與泵輻射在垂直方向中的重疊區應足夠小’ & 確保該泵輻射可在橫向中充份地傳送。 在一較佳的佈置中，上述的泵區配置在一波導中，其中 該波導是用來導引該泵輻射。該波導較佳是配置在#|@# 罩層之間，各外罩層分別具有一種折射率’其小於與該外 罩層鄰接的波導層之折射率。 該耦合結構較佳是在垂直方向中向內伸入至波導中°該 耦合結構在垂直方向中較佳是向內伸入至波導中最多達該 波導的垂直尺寸之30% ’特別是20% ’最佳時是10%。因此’ 該泵輻射之橫向的傳送只會受到小的干擾且同時可有效地 使泵輻射轉向至該發射區中。 該耦合結構亦可與波導相隔開。此處，該耦合結構在垂 直方向中至該波導的下一邊界的距離較佳是最多等於該波 導之垂直尺寸。此外，此距離較佳是最多爲1 〇 # m，特別佳 '時是5 μ m。 V.. 在另一種佈置中，該發射區以單石方式整合在半導體本 體中。該發射區和泵區因此可在一種共同的製造步驟（例 如，藉由MOVPE或MBE來進行的磊晶沈積）中製成。 在另一種佈置中，該發射區可與該半導體本體個別地製 成且較佳是固定在半導體本體上。在此種情況下，該發射 區和該泵區個別地製成且隨後互相進行定位。 在另一較佳的佈置中，在該發射區和該泵區之間形成一 -11- 200917601 種鏡面。此鏡面特別是用來反射該垂直方向中所傳送的發 射輻射。此鏡面因此形成該發射輻射用的一種共振鏡面。 此外，該泵輻射用的鏡面較佳是具有一種較該發射輻射 用的鏡面還小的反射率。該泵輻射因此可較簡易地入射至 該發射區中。該發射輻射所需的反射率較佳是至少80%，特 別是至少90%。該泵輻射所需的反射率較佳是至多30%，特 別是至多20%。 該鏡面可以多層的形式來形成。特別是該鏡面亦能以佈 拉格-鏡面來構成。 此外，該鏡面特別是以單石方式整合在半導體本體中。 該鏡面因此可藉由半導體層來形成。 在另一較佳的佈置中，該泵區及/或發射區含有III-V -化 合物半導體材料。利用III-V-化合物半導體材料’則在輻射 產生時可達成高的內部量子效率。 在另一較佳的佈置中，該栗區及/或發射區含有一種量子 結構。此名稱量子結構此處特別是包含一種結構’此結構 中電荷載體可藉由局限（confinement)而使其能量狀態經歷 一種量子化。此名稱量子'結構特別是未指出量子化的維 度。因此，量子結構可另外包含量子槽’量子線和量子點 以及這些結構的每一種組合。 在另一較佳的佈置中’半導體組件是以外部的共振器來 操作。外部的共振器例如可藉由鏡面來形成’該鏡面與半 導體本體相隔開。該發射輻射因此將通過該半導體本體和 -12- 200917601 外部的鏡面之間的無輻射區。該無輻射區中較佳是可另外 配置一非線性的光學元件，其可用來將該發射輻射之頻率 混合及/或使頻率倍增，大致上是成爲二倍。 依據一發出輻射之半導體組件之製造方法的一實施形 式，須沈積一種具有半導體層序列之半導體本體，半導體 層序列具有一種用來產生泵輻射之泵區。用來產生該發射 輻射之發射區和該泵區互相重疊地配置著或沈積著。形成 一耦合結構且製成該發出輻射的半導體組件。進行此方法 的順序只要適當亦可與此處所列舉的不一樣。 利用上述的方法，則可簡易地製成一種垂直發射方向中 發出輻射的半導體組件，其包含一泵輻射源。 在形成該耦合結構時，較佳是將半導體本體的材料及/或 配置在半導體本體上的各層之材料以區域方式予以去除， 這例如可藉由一種濕式化學-或乾式化學方法來達成。 半導體本體較佳是以磊晶方式例如藉由MBE或MOVPE 方法而沈積在一種生長基板上。在形成該耦合結構之前， 該生長基板可去除。於是，可使該耦合結構簡易地形成在 該泵區之遠離該發射區之此側上。 例如，可藉由硏磨、磨光或拋光等機械方式或濕式化學-或乾式化學蝕刻等化學方法來將該生長基板去除。另一方 式是’該生長基板可藉由相參的輻射（例如，雷射）來去除。 在另一種佈置中，該發射區沈積成半導體本體之半導體 層序列之一部份。特別是該發射區和該泵區可在一種共同 -13- 200917601 的晶晶步驟中製成。此處，首先沈積栗區且然後沈積該發 射區或反之亦可。因此，在形成一種以半導體材料爲主之 分離的發射區時即不需額外的磊晶步驟。 在另一種佈置中，須預製該發射區且該發射區固定在半 導體本體上。此種固定例如與材料有關且是藉由一種化合 物層來達成。此化合物層例如可含有一種黏合劑。 上述方法特別適合用來製造另一種半導體組件。上述半 導體組件中所達成的特徵亦可考慮用於上述方法中且反之 亦然。 本發明的其它特徵、有利的佈置和適當的形式將參照圖 式而描述於以下的各實施例中。 【實施方式】 相同或作用相同的元件在各圖中設有相同的參考符號。 所示的各元件和各元件之間的比例未必依比例繪出。反 之’爲了清楚之故，較小的元件且特別是層厚度已予放大 地顯不出。 第1圖顯示一垂直方向中發出輻射之半導體組件之第一 實施例。此半導體組件1包含一具有半導層序列的半導體 本體2。半導體層序列形成該半導體本體且較佳是以磊晶方 式藉由MOVPE或MBE而製成。 在半導體本體2之半導體層序列中形成一用來產生泵輻 射之泵區3。此外，半導體層序列具有一發射區4，其中該 泵區3和發射區4互相重疊而配置著。該發射區4和栗區3 -14- 200917601 因此以單石方式而積體化於一種共同的半導體本體中。 泵區3在相面對的側面上的橫向中是以二個側面3 0爲邊 界。泵輻射在此二個側面之間是在橫向中傳送。爲了使側 面30之反射率提高，則各側面30可分別設有一種塗層（大 致上是介電質層），其可構成佈拉格-鏡面。此塗層未明確顯 示在第1圖中。 此外，該發出輻射的半導體組件具有一耦合結構7，其藉 由凹口 71來形成。凹口 7向內延伸至半導體本體2中。此 耦合結構7配置在該泵區3之遠離該發射區4之此側上。 該泵區3配置在一波導35中。此波導具有第一波導層351 和第二波導層352，這些層351，352分別與該泵區相鄰接。 在泵區3之二側上，一外罩層31或另一外罩層32分別與 該波導3 5相鄰接。外罩層3 1，3 2可適當地具有一種折射率， 其小於各波導層3 5 1 ’ 3 5 2之折射率。藉由波導3 5，則可導 引該在橫向中傳送的泵輻射。 該耦合結構7之凹口 71由泵區3之遠離該發射區4之此 側而向內延伸至半導體本體2中。各凹口 71特別是在垂直 方向中向內延伸至該波導35中。各凹口較佳是形成溝渠形 式的凹口，其中各凹口之主延伸方向分別垂直於橫向（泵輻 射在橫向中傳送）而延伸，且另外亦垂直於垂直方向而延伸。 在該發出輻射的半導體組件1操作時，在橫向中傳送的 泵輻射之一部份藉由該耦合結構7而轉向至該發射區4之方 向中。該耦合結構因此能以一種一維的繞射柵格來構成。 -15- 200917601 該繞射柵格較佳是周期地或基本上是周期地構成。在該耦 合結構之周期長度爲L時，較佳是滿足 (N-0.4) · λ ^ (N + 0.4) · λ 其中Ν是正整數且λ是耦合結構之區域中該泵輻射之波 長。Ν = 1時特別有利，使耦合結構之周期長度介於該耦合結 構之區域中的泵輻射之波長的0.6倍（含）至1.4倍（含）之 間。該周期長度最佳是介於耦合結構之區域中的栗輻射之 波長的0· 8倍（含）至1.2倍（含）之間。 例如，在泵輻射之真空波長是920nm且折射率是3.4時該 周期長度大約是270nm。 藉由一種繞射柵格，其周期長度L等於泵輻射之波長， 則栗輻射之一部份在該繞射柵格上以第一階（order)轉向至 垂直方向中。以此種方式，則泵輻射之一部份可入射至該 發射區中。 與上述之實施例不同，該耦合結構亦能以一種準-周期的 繞射柵格來構成。 t·.. 另一方式是’各凹口 71亦可依據一隨機結構來配置。 入射至該發射區中的泵輻射主要是在一種對垂直方向最 多成20度的角度中傳送。 藉由該耦合結構7而轉向的泵輻射入射至該發射區中。 藉由被吸收的泵輻射’則可對該發射區進行光學泵送。 在半導體組件1之俯視圖中，該泵區3所具有的橫向範圍 大於該發射區4的橫向範圍。以此種方式，則能簡易地產 -16- 200917601 生強度較大的泵輻射。 在泵區3和該發射區4之間配置一鏡面5。此鏡面5以單 石方式積體化於半導體本體2之半導體層序列中。此鏡面5 以多層來形成且具有多個半導體層對（Pair) ’其分別包括半 導體層51和另一個半導體層52。這些半導體層具有互相不 同的折射率，使半導體層對形成一佈拉格-鏡面。 較佳是須形成該鏡面，使對該發射區4中所產生的輻射 之反射率大於對該泵區3中所產生的泵輻射之反射率。 對該發射區之反射率較佳是至少80%，特別佳時是至少 90%。對該栗區之反射率較佳是頂多30%，特別佳時是頂多 20%。 以此種方式，則半導體組件操作時在發射區4中產生的 輻射可有效地在該鏡面5上反射。因此，可防止該發射輻 射入射至泵區且亦不會入射至該耦合結構7上。此外，入 射至該發射區4中的泵輻射之量越大，則該鏡面相對於該 泵輻射的反射率越小。 在該發射區4之遠離該泵區3之此側上形成一種視窗層 25。適當的方式是使此視窗層可透過該發射輻射。該視窗層 25之遠離該發射區之表面在垂直方向中是與半導體本體對 齊且對該發射輻射形成一種輻射透過面20。 藉由外部鏡面8來形成一外部共振器。因此，該發出輻 射的半導體組件1是以一外部共振器來操作。 與此不同的是，該發出輻射的半導體組件在該發射區4 -17- 200917601 之遠離該泵區3之此側上具有另一鏡面。此另一鏡面可積 體化於半導體本體中或配置在半導體本體上。在此種情況 下可省略一外部共振器。 該耦合結構7之各凹口 71相鄰地配置著。此外，各凹口 具有互相垂直而延伸的側緣7 1 0。須在垂直方向中形成該耦 合結構7,使該栗輻射之一預定的成份入射至該發射區中。 各凹口之橫向尺寸較佳是在周期長度之0.3倍（含）至0.7 倍（含）之間，特別是在周期長度之0.4倍（含）至0.6倍（含） 之間，例如，0.5倍。在該泵輻射之真空波長是920nm時’ 該橫向尺寸例如是135nm。 在所示的實施例中，該耦合結構在垂直方向中向內伸A 至波導3 5中。該耦合結構向波導內伸入越多，則該泵輻1^ 與該耦合結構7之交互作用就越大，使泵輻射之較多的成 份可入射至該發射區4中。 另一方面，該耦合結構7亦可對該波導造成一種干擾° 一種耦合結構在垂直方向中向內伸入至該波導35中最多$ 達該波導之垂直尺寸的30%，此種耦合結構已顯示是適胃 的。該耦合結構較佳是向內伸入至該波導35中最多可達$ 波導之垂直尺寸的2 0 %，特別佳時是最多1 0 %。 與所示的實施例不同，該耦合結構7亦可與該波導3 5 # 隔開。這在當該泵輻射之橫向模式之大部份是在該波_ @ 外部中傳送時特別適當。就轉向至該耦合結構7之泵_ # 之足夠大的成份而言，垂直方向中該耦合結構至波導@ Τ -18- 200917601 一個邊界的距離最多是與波導之垂直尺寸一樣大。此外， 此距離最多是l〇#m，特別是5/zm。 該耦合結構之凹口 71可完全地或只—部份以—種塡料來 塡入。該塡料較佳是可透過泵輻射。因此，可防止或至少 可減少該栗輻射被該塡料所吸收。例如，該塡料可含有— 種介電質材料’其包括氧化物（例如，氧化矽或氧化鈦）、氮 化物（例如，氮化矽）、或氧化氮化物，例如，氧化氮化砂。 此外，該塡料可適當地具有一種折射率，其與相鄰的半 導體材料之折射率不同。此二種折射率之間的差越大，則 該耦合結構對泵輻射之影響越大。 另一方式是’該塡料亦可包括一種金屬。以此種方式， 則該耦合結構之反射率可提高。 此外，發出輻射的半導體組件1具有一第一接觸區6 1和 一第二接觸區62。須配置各接觸區，使半導體組件操作時 藉由施加一外部電壓而使電荷載體由二個不同側注入至該 泵區3中且在該泵區3形成電子-電洞對而在發出輻射的情 況下重組。 各接觸區61，62較佳是包含一種金屬，例如，金、銀、 鈦、鈾、鎳或鋁或金屬氧化物，其含有上述金屬之至少一 種。 鏡面5配置在電荷載體由各接觸區61，62注入至泵區中 時的路徑之外部。此鏡面5因此以電性絕緣方式構成。因 此，可防止或至少減少該泵輻射在此鏡面中的吸收現象。 -19- 200917601 亦可設置一種與上述方式不同的配置，此時該鏡面5配 置在電荷載體之注入路徑的內部。在此種情況下，該鏡面 較佳是具有導電性。 此外，在半導體組件1之俯視圖中，該耦合結構7較佳是 完全與發射區4重疊。 該耦合結構因此形成在一區域中，此區域中被該耦合結 構7轉向至垂直方向中的泵輻射將直接入射至該發射區4 中。波導35之干擾因此只限於一些區域中，該些區域中可 將泵輻射有效地入射至該發射區4中。 上述之半導體組件的構造適用於多種半導體材料。該泵 區及/或該發射區較佳是含有一種III-V-化合物半導體材料。 III-V-化合物半導體材料特別適合用來在紫外線 (IiuGayAh…yN)中經由可見光（InxGayAh.x_yN，特別是藍色至 綠色輻射，或In>：GayAli_x.yP，特別是黃色至紅色）直至紅外 線（IiuGayAli.x.yAs)的光譜區域中產生幅射。此處，QSxgi， OSySl 且 x + ySl’ 特另！J 是 X关 1，y^l，X关 〇 及 / 或 y^〇。 藉由III-V-化合物半導體材料，特別是由上述材料構成者， 則在輻射產生時另外可有利地達成高的內部量子效率。 該發射區及/或泵區較佳是含有量子結構。此處，該量子 結構可具有一個或多個量子層。 此名稱量子井結構此處特別是包含一種結構，此結構中 電荷載體可藉由局限（confinement)而使其能量狀態經歷— 種里子化。此名稱量子井結構此處未指出量子化的維度。 -20- 200917601 因此，量子井結構可另外包含量子槽，量子線和量子點以 及這些結構的每一種組合。 然後’將描述一種半導體本體用的層構造，其發射區用 來產生一種波長是1050nm之輻射。 栗區3具有一種厚度6.5nm之Ino.13Gac1.87As-量子層。波導 層 351以二層的方式來構成。一種厚度 7 3.57nm之 AlmGao.As-第一半導體層是與該量子層3相鄰接。波導層 351之第二半導體層是一種厚度485nm之AlmGamAs-半導 體層。第二波導層352對應於第一波導層351而形成，其中 由泵區3所隔開的六1。+ 23〇&〇.77人8-半導體層具有一種與泵區3 不同的厚度78 8.7 9nm。 分別鄰接於波導3 5之外罩層3 1和3 2分別是厚度爲 lOOOnm 之 Alo.47Gao.53As-半導體層。 配置在泵區3之不同側上的半導體層可適當地分別具有 相反的導電型。例如，配置在泵區3之與該發射區4相面對 的此側上的半導體層35 1，3 1是p-摻雜者，且配置在泵區3 之與該發射區4相遠離的此側上的半導體層3 52 ’ 32是n-摻雜者，或反之亦可。 該鏡面5以一種具有3 0個半導體層對的佈拉格-鏡面來構 成。各個半導體層對分別具有一種厚度是8 8nm之A1 As-半 導體層51和一種厚度是75nm之GaAs-半導體層52。 用來產生該發射輻射之發射區4具有一種由14個量子層 U所形成的序列，各層間分別形成一種位障層42。量子層 -21- 200917601 41以一種厚度10nm之InGaAs-半導體層來構成。該位障層 包括一種半導體層對，其具有一種厚度是48nm之GaAsP-半導體層和一種厚度93nm且鋁含量是10%之AlGaAs-半導 體層。 在該發射區4之遠離該栗區3之此側上形成一種視窗層 25，其可透過該發射區中所產生的輻射。此視窗層以二層的 方式來構成，其中一厚度308nm且鋁含量10 %之AlGaAs-半 導體層鄰接於該發射區。一厚度551 nm之GaP·半導體層是 與半導體本體2相齊平且形成該輻射透過面20。 藉由半導體層參數（特別是材料成份或量子層的層厚度） 的改變，則可在廣泛的極限中調整該泵區和該發射區之發 射波長。 發出輻射的半導體組件之第二實施例的截面圖顯示在第 2圖中。第二實施例基本上與第1圖之第一實施例相同。不 同之處在於，該耦合結構7具有一鋸齒形的結構。如第一 實施例所示，形成該耦合結構之各凹口 71形成在半導體本 體2中且向內延伸至波導35中。該耦合結構之周期長度較 佳是介於泵區3中所產生的泵輻射之波長的0.6倍至1.4倍 之間。 該耦合結構亦可與上述的形式不同，使其主要是由於該 耦合結構上的反射而將該泵輻射轉向。在此種情況下，該 耦合結構較佳是具有傾斜於垂直方向而直立的側面。此 處，該耦合結構未必以周期的形式而形成。一種周期結構 -22- 200917601 大致上可以是一種鋸齒形的結構且其周期較泵輻射的波長 大很多（至少是大約5倍）’則此種周期結構適合於此處。 發出輻射的半導體組件之第三實施例的截面圖顯示在第 3圖中。第三實施例基本上與第1圖所示的第一實施例相 同。不同之處在於，該發出輻射的半導體組件具有另一個 半導體本體’其包括另一種半導體層序列200，其中該發射 區4和鏡面5形成在此另一個半導體本體中。該發射區4 和該泵區3因此未以單石方式積體化於一種共用的半導體 本體中。該另一種半導體層序列200藉由一種化合物層9 而與半導體本體2相連接。此化合物層9可透過該泵輻射且 例如可包含一種黏合劑。 鏡面5亦可與第一實施例不同而形成在半導體本體200 上或形成在半導體本體2上。在此種情況下，此鏡面藉由 介電質層而形成，其藉由蒸鍍或濺鏟而沈積在預製的半導 體本體上或沈積在另一預製的半導體本體上。另一方式 是’該鏡面亦可與泵區3 —起積體化於半導體本體2中。 半導體本體2和另一個半導體本體200可個別地製成且隨 後互相固定著。具有泵區3之半導體本體之製造和具有發 射區4之半導體本體之製造因此可互相獨立地進行。 此外’與第一實施例不同之處在於，在該發出輻射的半 導體組件1和該外部的鏡面8之間配置一種非線性-光學元 件。藉由非線性-光學過程，特別是頻率倍增（大致上是二倍） 過程’則該發射區4中所產生的發射輻射的至少一部份將 -23- 200917601 轉換成另一波長的輻射。 當然’依據第1，2圖所不的實施例之一發出輻射的半導 體組件亦可與一非線性·光學元件一起操作。 第4圖顯示泵輻射之藉由該耦合結構而轉向後的強度作 爲與垂直方向所形成的角度β之函數的模擬結果。第4圖 中分別以放大的方式顯示1度至5度以及-67度至-73度之 角度範圍的情況。 該模擬是藉助於所謂”有限差之時域（Finite Difference Time Domain)”·方法來進行。該模擬已顯示出耦合結構相對 於由一側入射至耦合結構上的波之效果。已繞射的輻射之 正角度對應於前向中的繞射，負角度對應於後向中的繞 射。該模擬是依據泵輻射的真空波長爲920 nm且折射率爲 3.4時該耦合結構之凹口之垂直尺寸是500nm，橫向尺寸爲 13 5nm且周期長度爲270nm時作成。周期長度幾乎等於耦合 結構之區域中泵輻射的波長（920nm/3.4)。各凹口中因此以空 氣來塡入。 藉由耦合結構，則已繞射的強度I之大部份都轉向至一種 相對於垂直方向成小角度的範圍中。在所示的例子中，大 部份的輻射都繞射至一種小於4度的角度中。發射區之光 學栗因此可簡化。 相較之下，第5圖顯示一種半導體組件之相對應的模擬， 其中未設有該耦合結構。在此種情況下，主要是在前向中 發生散射。泵輻射不會在該發射區的方向中有效地轉向至 -24- 200917601 與垂直方向成大約20度或更小的小角度中。 依據已進行的模擬，藉由該耦合結構，則可使泵輻射功 率之大約3 8 %入射至該發射區中，但在未設有該耦合結構時 只有大約1 1 %之泵輻射功率到達該發射區中。因此，藉由耦 合結構，則可使入射率之値提高至大於3倍。 第6圖顯示已轉向的泵輻射之強度作爲沿著橫向X擴展的 函數之模擬結果。由發射區之中軸開始，該中軸表示X-軸 的零點，以任意單位所示的強度在二個方向中在一種大於 4 5 # m之區域上表示一種強度値，其介於0.2和0.35之間。 因此，在橫向X中可使泵輻射較均勻地入射至發射區中。 該發射區之光學泵因此可簡化。 第7A至7E圖是依據多個截面圖中所顯示的中間步驟的 一垂直方向中發出輻射的半導體組件之製造方法的一實施 例。此製造方法描述了半導體組件製造方法的一範例，其 對應於第1圖之第一實施例。 如7A圖所示，首先在生長基板21上沈積該形成半導體 本體2之半導體層序列。這較佳是以磊晶方式（例如，Μ B E 或MOVPE)來達成。 半導體層序列包括泵區3和發射區4以及配置在泵區3 和發射區4之間的鏡面5。泵區、發射區和鏡面因此以單石 方式積體化於一共用的半導體本體2中。於是，此製程可 在一共同的磊晶-步驟中進行。 然後，如第7Β圖所示’以區域方式將該發射區4和該鏡 -25- 200917601 面5之材料去除。一種配置在波導35和發射區4之間的外 罩層31因此被裸露出。在該外罩層31上在已裸露的區域中 沈積第一接觸區61。這較佳是藉由蒸鍍或濺鍍來達成，此 時接觸區亦能以多層的形式來構成。 該生長基板21由具有半導體層序列之半導體本體2中去 除。這例如藉由機械方式（例如，硏磨、磨光或拋光）及/或 化學方式（例如’濕式化學-或乾式化學蝕刻）來達成。另一 , 方式是’該生長基板亦可藉由相參的輻射（例如，雷射輻射） 來去除。以此種方式，則配置在該泵區3之遠離該發射區4 之此側上的外罩層3 2在結構化時可被接近。半導體本體 2(其中去除了該生長基板）顯示在第7C圖中。 第7D圖所示的該耦合結構7藉由半導體本體2中的凹口 而形成。各凹口 71較佳是藉由微影式來結構化且隨後以濕 式化學-或乾式化學蝕刻來製成。各凹口 7 1中至少一部份以 介電質材料來塡入（未明確顯示出）。 V 然後’在泵區3之遠離該發射區4之此側上沈積一第二接 觸區62。第二接觸區的沈積同樣可藉由蒸鍍或濺鍍來達成。 已製成的半導體組件1顯示在第7E圖中。 本專利申請案主張德國專利申請案DE 10 2007 045 306.1 和DE 10 2007 061 481.2之優先權’其已揭示的整個內容在 此一併作爲參考。 本發明當然不限於依據各實施例中所作的描述。反之， 本發明包含每一新的特徵和各特徵的每一種組合，特別是 -26- 200917601 包含各申請專利範圍-或不同實施例之個別特徵之每一種組 合’當相關的特徵或相關的組合本身未明顯地顯示在各申 SP3專利圍中或各貫施例中時亦屬本發明。 【圖式簡單說明】 第1圖發出輻射的半導體組件之第一實施例的截面圖。 第2圖發出頓射的半導體組件之第二實施例的截面圖。 第3圖發出輻射的半導體組件之第三實施例的截面圖。 第4圖栗輻射之返回強度作爲與垂直方向所形成的角度 0之函數的模擬結果。 第5圖不具耦合結構之組件之相對應的模擬結果。 第ό圖栗輻射之返回強度沿著橫向擴展時的模擬結果。 第7Α至7Ε圖依據多個顯示在截面圖中的中間步驟來製 造一發出輻射的半導體組件用的方法之一實施例。 【主要元件符號說明】 1 發 出 輻 射 的 半 導體組 件 2 具 有 半 導 體 層 序列的 半導體本體 20 輻 射 透 過 面 200 另 -- 半 導 體 nJ22· 本 體 21 生 長 基 板 25 視 窗 層 3 泵 區 30 泵 區 之 側 面 3 1 外 罩 層 -27- 200917601 32 另 -- 外 罩 層 35 波 導 35 1 第 — 波 導 層 352 第 二 波 導 層 4 發 射 區 4 1 量 子 層 42 位 障 層 5 鏡 面 5 1 第 一 m 面 層 52 第 二 鏡 面 層 61 第 —- 接 觸 丨品- 62 第 二 接 觸 丨品- 7 串禹 合 結 構 7 1 凹 □ 7 10 凹 P 之 側 緣 8 外 部 鏡 面 85 非 線 性 -光學元件 9 化合物層200917601 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor component that emits radiation in a vertical emission direction and a method of fabricating the same. [Prior Art] A semiconductor laser that achieves optical pumping in a vertical emission direction, for example, a wafer laser 'sometimes has a high absorption loss in the interior of the laser, which is tight with a pump laser The shape is composed together. SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor component that emits radiation in a vertical emission direction, which is constructed in a compact shape with a pump laser and has preferred characteristics. Furthermore, the present invention provides a method of fabricating a radiation-emitting semiconductor component. The above objects are achieved by a semiconductor component or a manufacturing method that is independent of the scope of the patent application. Advantageous arrangements and other forms of the invention are described in the respective dependent claims. According to an embodiment, the semiconductor component that emits radiation in the vertical emission direction has a semiconductor body comprising a semiconductor layer sequence. A pump zone for generating a pump radiation is formed in the semiconductor layer sequence. An emitter region for generating radiation is disposed on the pumping zone. A coupling structure is formed in the semiconductor component. The vertical emission direction extends perpendicular to the main extension direction of the semiconductor layer of the semiconductor layer sequence. The pump radiation is incident into the emitter region by the coupling structure when the radiation-emitting semiconductor component is in operation. The pump zone and the emission zone 200917601 are arranged to overlap each other, which simplifies the compact formation of the radiation-emitting semiconductor component. The pump zone and the launch zone can be designed to be widely independent of one another. The efficiency of radiation generation can therefore be increased. By a coupling structure is meant, in particular, a structure that extends in the transverse direction (ie, in the main extension of the semiconductor layer of the semiconductor body), a portion of the incident radiation being reflected, scattered and/or diffracted by the structure. Turn to a direction that is different from the original direction. Further, the coupling structure is preferably a structural element having a plurality of adjacent configurations in the lateral direction. Preferably, each of the structural elements has a structural size in the wavelength range which is approximately zero of the wavelength of the pump radiation in the material of the semiconductor body. 1 time (inclusive) to 20 times (inclusive). When the semiconductor component is in operation, the pump radiation is preferably transmitted in the lateral direction. The pump radiation and a type of emitted radiation are therefore transmitted in mutually different directions (especially perpendicular to each other). Further, the coupling structure is for causing a portion of the pump radiation transmitted in the lateral direction to be incident into the emission region. In a preferred form, the affinity structure is configured to divert a portion of the pump radiation transmitted in the transverse direction to a direction that extends obliquely or perpendicularly to the lateral direction, particularly to In the launch area. With this coupling structure, the pump radiation can be affected, causing a change in the direction of transmission of a portion of the pump radiation. This steered component of the pump radiation has a wave vector that is displayed in a different direction than the original lateral direction. The wave vector of such steered components of the pump radiation is highlighted by the main extension of the semiconductor layer of the semiconductor body. In an advantageous arrangement, the pumping zone protrudes in the transverse direction at least in a regional manner over the -6-200917601. In the plan view of the radiation-emitting semiconductor component, the pumping zone is thus covered by the emitter zone only in a regional manner. Therefore, efficient generation of pump radiation with higher radiant power can be achieved simply. In addition, the coupling structure must be configured such that radiation that is diverted to the vertical direction by the coupling structure directly reaches the emitter region. Suitably, the coupling structure preferably overlaps the emitter region in a top view of the radiation-emitting semiconductor component. Therefore, an effective optical pump of the emitter region can be simplified. The pump radiation is preferably incident into the emitter region by reflection and/or diffraction on the coupling structure during operation of the semiconductor component. Preferably, the chestnut radiation incident into the emissive region is predominantly (approximately at least 50% intensity) transmitted at an angle of up to 20 degrees from the vertical. Pump radiation incident into the emissive zone can optically pump the emissive zone. Preferably, in the optically pumped emitter region, a coherent radiation is produced which has a predetermined emission wavelength. In a preferred arrangement, the coupling structure is disposed on the side of the chestnut region remote from the emitter region. Such a coupling structure can be easily fabricated as compared with a coupling structure disposed between the pumping zone and the emitting zone. Here, the coupling structure is preferably operable to reflect, i.e., the radiation component incident on the coupling structure and reflected or diffracted on the coupling structure is primarily transmitted on the same side of the coupling structure. In another preferred arrangement, the affinity structure is formed periodically, periodically or at least substantially in the transverse direction. Most of them are periodically formed couplings. The 200917601 structure is also called the quasi periodic structure. In terms of the period length L of the period- or quasi-period-dependent structure, that is, in terms of the length at which the basic structure of the affinity structure is repeated, it is preferable to satisfy: (N-0. 4) · λ ^ (N + 0. 4) λ where Ν is a positive integer and λ is the wavelength of the pump radiation in the region of the coupling structure, i.e., the wavelength obtained by dividing the wavelength in the vacuum by the refractive index in the region of the coupling structure. In a quasi-periodic coupling structure, the length of the period is equal to the average distance of the structural elements' wherein at least a portion of the adjacent structural elements are disposed at a different distance from the length of the period. In particular, the coupling structure can form a diffraction grating, preferably a one-dimensional diffraction grating. The wavelength vector of the diffracted wave ks is obtained by the so-called Bragg condition shown by the following equation: k_s = -f (==) where k· is the wavelength vector of the incident radiation and G is The reciprocal of the raster vector. In the case of a diffractive grid of one dimension, G is the reciprocal of the raster vector, which follows the diffraction grating with the condition g = 2 π /a and the diffraction grating. The lattice constant a of the grid is combined. k is the wave vector of the incident wave and ki = n . 2 π / again -' where η is the refractive index of the material in which the wave is transmitted, and λ P is the vacuum wavelength of the pump radiation. When the radiation diffracted into the first order is transmitted perpendicular to the diffraction grating, ie, the component of the wave vector that disappears along the diffraction grating (ks = 0), 200917601, The lattice constant is a = λ p /n. The period length of a coupling structure can be equal to the wavelength of the pump radiation in the region of the pump structure. With this coupling structure, the pump radiation transmitted in the lateral direction is diffracted into the first order in the vertical direction. The period length of the coupling structure is preferably from 0.6 to 6 times (inclusive) to 1. of the wavelength of the pump radiation in the region of the coupling structure. Between 4 times and (inclusive), this corresponds to the equation of the period length L when N = 1 described above. The period length p of the coupling structure is particularly good when it is 0 of the wavelength of the pump radiation in the region of the combined structure. 8 times (inclusive) to 1. Between 2 times (inclusive). In another arrangement, the coupling structure is formed in accordance with a random structure. In this case, the structural elements of the coupling structure are arranged to each other with a variable distance, and in this case, the configuration can be cycle-free. In a preferred form, the coupling structure is formed by adjacently configured recesses. In particular, the recesses can be arranged periodically, quasi-periodically or in accordance with a random configuration. w In addition, the lateral dimension of each notch is preferably 0. 3 times (inclusive) to 0. Between 7 times (inclusive), especially between 0. 4 times (inclusive) to 0. Between 6 times (inclusive), for example, 0. 5 times. In addition, the lateral dimension of each recess is preferably 0 of the wavelength of the pump radiation in the region of the weighed structure. 3 times (inclusive) to 0. 7 times (inclusive), especially between 0. 4 times (inclusive) to 0. 6 times (inclusive) between, for example, 0. 5 times. Further, each of the recesses is preferably formed in the form of a trench. The main extension directions of the notches extend perpendicularly to the transverse direction and the direction perpendicular to the vertical emission direction. In the manner of -9-200917601, a diffractive grating of one dimension can be formed by the notch. In another arrangement, each of the recesses has a side edge that extends vertically. The recesses can be bordered on the two sides by a vertical side edge in the lateral direction, by means of which the pump radiation transmitted in the transverse direction can achieve a particularly sharp refractive index jump on each side edge. The cross section of each recess may actually have any form. In particular, each recess may have a polygonal form or a basic form that is at least curved in a regional manner. This . In addition, the coupling structure can be structured in a lateral direction or can also be structured in a zigzag manner. In another preferred arrangement, each recess extends into the interior of the semiconductor body. The recesses are thus formed at least in part in the semiconductor body. The pump radiation transmitted in the transverse direction in the body of the conductor can thus be easily deflected by the coupling structure. In another preferred arrangement, at least a portion of each of the recesses is threaded with a dip. This material may suitably have a refractive index with the semiconductor body ι. : Different refractive index. In addition, this material can be radiated through the pump. Also, the pigment contains a dielectric material. For example, the tantalum may contain or consist of oxides, nitrides or oxynitrides. Alternatively, the dip contains a metal. In this way, the reflectance of the weighed structure can be improved. In a preferred arrangement, the coupling structure must be formed in a vertical direction such that a predetermined component of the pump radiation is incident into the emitter region. The coupling structure in the vertical direction is larger than the overlap region of the range of the pump radiation in the vertical direction, -10-200917601, and the more the pump is incident on the emitter region, the more the 轮 is formed. The overlap with the pump radiation in the vertical direction should be small enough '& Ensure that the pump radiation is fully delivered in the lateral direction. In a preferred arrangement, the pumping zone is disposed in a waveguide, wherein the waveguide is used to direct the pump radiation. Preferably, the waveguide is disposed between the #|@# cover layers, each of the outer cover layers having a refractive index 'which is smaller than the refractive index of the waveguide layer adjacent to the outer cover layer. Preferably, the coupling structure projects inwardly into the waveguide in a vertical direction. The coupling structure preferably projects inwardly into the waveguide up to 30% of the vertical dimension of the waveguide in the vertical direction, particularly 20%. 'The best time is 10%. Thus, the lateral transmission of the pump radiation is only subject to small disturbances and at the same time effectively diverts the pump radiation into the launch zone. The coupling structure can also be spaced apart from the waveguide. Here, the distance of the coupling structure in the vertical direction to the next boundary of the waveguide is preferably at most equal to the vertical dimension of the waveguide. In addition, the distance is preferably at most 1 〇 # m, particularly preferably '5 μm. V. . In another arrangement, the emissive region is integrated in the semiconductor body in a monolithic manner. The emitter and pump zones can thus be fabricated in a common manufacturing step (e.g., epitaxial deposition by MOVPE or MBE). In another arrangement, the emitter region can be formed separately from the semiconductor body and is preferably mounted on the semiconductor body. In this case, the emitter zone and the pump zone are made separately and then positioned relative to one another. In another preferred arrangement, a -11-200917601 mirror is formed between the emitter region and the pump region. This mirror is used in particular to reflect the emitted radiation transmitted in the vertical direction. This mirror thus forms a resonant mirror for the emitted radiation. Further, the mirror for radiation of the pump preferably has a reflectance smaller than that of the mirror for emitting radiation. The pump radiation can therefore be incident into the emitter zone relatively simply. The reflectance required for the emission of radiation is preferably at least 80%, especially at least 90%. The reflectance required for the pump radiation is preferably at most 30%, in particular at most 20%. The mirror surface can be formed in multiple layers. In particular, the mirror can also be constructed with a Bragg-mirror. Furthermore, the mirror surface is integrated in the semiconductor body, in particular in a monolithic manner. The mirror surface can thus be formed by a semiconductor layer. In another preferred arrangement, the pumping zone and/or the emitter zone contain a III-V-compound semiconductor material. The use of III-V-compound semiconductor material' achieves high internal quantum efficiency at the time of radiation generation. In another preferred arrangement, the chestnut region and/or the emitter region contains a quantum structure. The name quantum structure herein specifically includes a structure in which the charge carrier can undergo a quantization by its confinement. This name quantum 'structure especially does not indicate the dimension of quantization. Thus, the quantum structure may additionally comprise quantum wells' quantum wires and quantum dots and each combination of these structures. In another preferred arrangement, the semiconductor component is operated with an external resonator. The external resonator can be formed, for example, by a mirror surface. The mirror surface is spaced apart from the semiconductor body. The emitted radiation will thus pass through the non-radiative region between the semiconductor body and the mirror surface outside the -12-200917601. Preferably, the non-radiative region is additionally provided with a non-linear optical element that can be used to mix and/or multiply the frequency of the emitted radiation, which is substantially doubled. In accordance with an embodiment of the method of fabricating a radiation-emitting semiconductor component, a semiconductor body having a sequence of semiconductor layers having a pump region for generating pump radiation is deposited. The emitter region and the pump region for generating the emitted radiation are disposed or deposited overlapping each other. A coupling structure is formed and the radiation-emitting semiconductor component is fabricated. The order in which this method is performed may be different from that listed herein as appropriate. With the above method, a semiconductor component that emits radiation in a vertical emission direction can be easily fabricated, which includes a pump radiation source. In forming the coupling structure, it is preferred to remove the material of the semiconductor body and/or the material of the layers disposed on the semiconductor body in a regional manner, for example by a wet chemical or dry chemical method. The semiconductor body is preferably deposited on a growth substrate in an epitaxial manner, such as by the MBE or MOVPE method. The growth substrate can be removed prior to forming the coupling structure. Thus, the coupling structure can be easily formed on the side of the pumping zone remote from the emitter zone. For example, the growth substrate can be removed by mechanical means such as honing, buffing or polishing, or chemical methods such as wet chemical- or dry chemical etching. Alternatively, the growth substrate can be removed by coherent radiation (e.g., laser). In another arrangement, the emissive region is deposited as part of a semiconductor layer sequence of the semiconductor body. In particular, the emitter zone and the pump zone can be made in a crystallization step of the common -13-200917601. Here, the chestnut zone is first deposited and then the emitter zone is deposited or vice versa. Therefore, no additional epitaxial steps are required in forming a separate emitter region based on a semiconductor material. In another arrangement, the emitter region must be preformed and secured to the semiconductor body. Such fixing is for example material dependent and is achieved by a compound layer. This compound layer may, for example, contain a binder. The above method is particularly suitable for making another semiconductor component. Features achieved in the above described semiconductor components are also contemplated for use in the above methods and vice versa. Other features, advantageous arrangements and suitable forms of the invention will be described in the following examples with reference to the drawings. [Embodiment] The same or similar elements are provided with the same reference symbols in the respective drawings. The components shown and the ratios between the components are not necessarily drawn to scale. In contrast, for the sake of clarity, smaller components, and in particular layer thicknesses, have been shown to be enlarged. Figure 1 shows a first embodiment of a semiconductor component that emits radiation in a vertical direction. The semiconductor component 1 comprises a semiconductor body 2 having a semiconducting layer sequence. The semiconductor layer sequence forms the semiconductor body and is preferably formed by epitaxial means by MOVPE or MBE. A pump zone 3 for generating pump radiation is formed in the semiconductor layer sequence of the semiconductor body 2. Further, the semiconductor layer sequence has an emitter region 4 in which the pump region 3 and the emitter region 4 are arranged to overlap each other. The emitter region 4 and the chestnut region 3-14-200917601 are thus integrated in a single semiconductor body in a single stone manner. The pump zone 3 is bordered by two sides 30 in the lateral direction on the facing sides. The pump radiation is transmitted in the lateral direction between the two sides. In order to increase the reflectivity of the side faces 30, each of the side faces 30 may be provided with a coating (generally a dielectric layer) which may constitute a Bragg-mirror. This coating is not clearly shown in Figure 1. Furthermore, the radiation-emitting semiconductor component has a coupling structure 7, which is formed by a recess 71. The recess 7 extends inwardly into the semiconductor body 2. This coupling structure 7 is arranged on the side of the pump zone 3 remote from the emitter zone 4. The pump zone 3 is arranged in a waveguide 35. This waveguide has a first waveguide layer 351 and a second waveguide layer 352, which are adjacent to the pumping zone, respectively. On either side of the pump zone 3, an outer cover layer 31 or another outer cover layer 32 is adjacent to the waveguide 35, respectively. The outer cover layers 3 1, 3 2 may suitably have a refractive index which is smaller than the refractive index of each of the waveguide layers 3 5 1 ' 3 5 2 . By means of the waveguide 35, the pump radiation transmitted in the transverse direction can be guided. The recess 71 of the coupling structure 7 extends inwardly from the side of the pumping zone 3 remote from the emitter zone 4 into the semiconductor body 2. Each recess 71 extends inwardly into the waveguide 35, particularly in the vertical direction. Preferably, each of the recesses is a recess formed in the shape of a channel, wherein the main extension directions of the recesses extend perpendicularly to the lateral direction (the pump radiation is transmitted in the lateral direction) and also extend perpendicularly to the vertical direction. When the radiation-emitting semiconductor component 1 is in operation, a portion of the pump radiation that is transmitted in the lateral direction is deflected by the coupling structure 7 into the direction of the emitter region 4. The coupling structure can thus be constructed in a one-dimensional diffraction grid. -15- 200917601 The diffraction grating is preferably constructed periodically or substantially periodically. When the period length of the coupling structure is L, it is preferably satisfied (N-0. 4) · λ ^ (N + 0. 4) · λ where Ν is a positive integer and λ is the wavelength of the pump radiation in the region of the coupling structure. It is particularly advantageous when Ν = 1, such that the period length of the coupling structure is between 0 and the wavelength of the pump radiation in the region of the coupling structure. 6 times (inclusive) to 1. 4 times (inclusive). The length of the period is preferably 0.8 times (inclusive) to 1. of the wavelength of the pump radiation in the region of the coupling structure. Between 2 times (inclusive). For example, the vacuum wavelength of the pump radiation is 920 nm and the refractive index is 3. At 4 o'clock, the period length is approximately 270 nm. By means of a diffraction grating having a period length L equal to the wavelength of the pump radiation, a portion of the pump radiation is deflected in the first direction onto the diffraction grid in a vertical direction. In this manner, a portion of the pump radiation can be incident into the emitter region. Unlike the embodiments described above, the coupling structure can also be constructed with a quasi-period diffraction grating. t·. . Alternatively, the recesses 71 can also be configured in accordance with a random configuration. The pump radiation incident into the emissive zone is primarily transmitted at an angle of up to 20 degrees in the vertical direction. The pump radiation deflected by the coupling structure 7 is incident into the emitter region. The emitter zone can be optically pumped by the absorbed pump radiation. In the top view of the semiconductor component 1, the pump zone 3 has a lateral extent greater than the lateral extent of the emitter zone 4. In this way, it is possible to easily generate a strong pump radiation from -16 to 200917601. A mirror 5 is arranged between the pump zone 3 and the emitter zone 4. This mirror surface 5 is integrated in a monolithic manner into the semiconductor layer sequence of the semiconductor body 2. This mirror 5 is formed in a plurality of layers and has a plurality of semiconductor layer pairs which respectively include a semiconductor layer 51 and another semiconductor layer 52. These semiconductor layers have mutually different refractive indices such that the semiconductor layer pairs form a Bragg-mirror. Preferably, the mirror surface is formed such that the reflectance of the radiation generated in the emitter region 4 is greater than the reflectance of the pump radiation generated in the pump region 3. The reflectance for the emissive region is preferably at least 80%, particularly preferably at least 90%. The reflectance of the chestnut region is preferably at most 30%, and particularly preferably at most 20%. In this way, the radiation generated in the emitter region 4 when the semiconductor component is operated can be effectively reflected on the mirror surface 5. Therefore, the emitted radiation can be prevented from being incident on the pumping region and also not incident on the coupling structure 7. Moreover, the greater the amount of pump radiation incident into the emitter zone 4, the less the reflectance of the mirror relative to the pump radiation. A window layer 25 is formed on the side of the emitter zone 4 remote from the pump zone 3. A suitable way is to make this window layer transparent to the emitted radiation. The surface of the window layer 25 remote from the emitter region is aligned with the semiconductor body in the vertical direction and forms a radiation transmissive surface 20 for the emitted radiation. An external resonator is formed by the outer mirror 8. Therefore, the radiation-emitting semiconductor component 1 is operated by an external resonator. In contrast to this, the radiation-emitting semiconductor component has a further mirror surface on the side of the emission region 4-17-200917601 remote from the pumping zone 3. This further mirror can be integrated into the semiconductor body or arranged on the semiconductor body. In this case, an external resonator can be omitted. The recesses 71 of the coupling structure 7 are disposed adjacent to each other. Further, each of the recesses has a side edge 7 1 0 extending perpendicularly to each other. The coupling structure 7 is formed in the vertical direction such that a predetermined component of the pump radiation is incident into the emitter region. The lateral dimension of each notch is preferably 0. 3 times (inclusive) to 0. Between 7 times (inclusive), especially at the length of the period 0. 4 times (inclusive) to 0. Between 6 times (inclusive), for example, 0. 5 times. When the vacuum wavelength of the pump radiation is 920 nm, the lateral dimension is, for example, 135 nm. In the illustrated embodiment, the coupling structure extends inwardly into the waveguide 35 in the vertical direction. The more the coupling structure projects into the waveguide, the greater the interaction of the pumping reflector 1 with the coupling structure 7, so that more of the component of the pump radiation can be incident into the emitter zone 4. On the other hand, the coupling structure 7 can also cause an interference to the waveguide. A coupling structure projects inwardly in the vertical direction to the waveguide 35 up to 30% of the vertical dimension of the waveguide. The display is stomach friendly. Preferably, the coupling structure projects inwardly into the waveguide 35 by up to 20% of the vertical dimension of the waveguide, particularly preferably up to 10%. In contrast to the embodiment shown, the coupling structure 7 can also be spaced apart from the waveguide 3 5 #. This is particularly appropriate when most of the lateral mode of the pump radiation is transmitted in the wave_@ outside. In terms of a sufficiently large component of the pump _# that is turned to the coupling structure 7, the distance from the coupling structure to the waveguide @ Τ -18- 200917601 in the vertical direction is at most as large as the vertical dimension of the waveguide. In addition, this distance is at most l〇#m, especially 5/zm. The notch 71 of the coupling structure can be inserted completely or only partially with a type of dip. The dip material is preferably permeable to the pump. Therefore, it is possible to prevent or at least reduce the absorption of the pump radiation by the dip. For example, the dip may contain a dielectric material 'which includes an oxide (e.g., hafnium oxide or titanium oxide), a nitride (e.g., tantalum nitride), or an oxynitride, such as cerium oxide oxide. Further, the dip material may suitably have a refractive index which is different from the refractive index of the adjacent semiconductor material. The greater the difference between the two refractive indices, the greater the effect of the coupling structure on pump radiation. Alternatively, the meal may also comprise a metal. In this way, the reflectivity of the coupling structure can be increased. Furthermore, the radiation-emitting semiconductor component 1 has a first contact region 61 and a second contact region 62. Each contact region shall be arranged such that the charge carrier is injected into the pump region 3 from two different sides by applying an external voltage during operation of the semiconductor component and an electron-hole pair is formed in the pump region 3 to emit radiation Reorganize in the case. Each of the contact regions 61, 62 preferably comprises a metal such as gold, silver, titanium, uranium, nickel or aluminum or a metal oxide containing at least one of the foregoing metals. The mirror 5 is disposed outside the path when the charge carriers are injected into the pump zone by the respective contact regions 61, 62. This mirror surface 5 is thus constructed in an electrically insulating manner. Therefore, the absorption of the pump radiation in the mirror can be prevented or at least reduced. -19- 200917601 A configuration different from the above may be provided, in which case the mirror 5 is disposed inside the injection path of the charge carrier. In this case, the mirror surface is preferably electrically conductive. Furthermore, in the top view of the semiconductor component 1, the coupling structure 7 preferably overlaps completely with the emitter region 4. The coupling structure is thus formed in a region in which pump radiation that is deflected by the coupling structure 7 into the vertical direction will be incident directly into the emitter region 4. The interference of the waveguides 35 is thus limited to regions in which pump radiation can be effectively incident into the emitter region 4. The above described semiconductor component construction is suitable for a variety of semiconductor materials. Preferably, the pump zone and/or the emitter zone comprise a III-V-compound semiconductor material. III-V-compound semiconductor materials are particularly suitable for use in visible light (InxGayAh.) in ultraviolet light (IiuGayAh...yN). x_yN, especially blue to green radiation, or In>:GayAli_x. yP, especially yellow to red) up to the infrared line (IiuGayAli. x. Radiation is generated in the spectral region of yAs). Here, QSxgi, OSySl and x + ySl’ are special! J is X off 1, y ^ l, X off 〇 and / or y ^ 〇. By means of the III-V-compound semiconductor material, in particular of the above-mentioned materials, a high internal quantum efficiency can be advantageously achieved in the event of radiation generation. The emitter and/or pump zone preferably contains a quantum structure. Here, the quantum structure may have one or more quantum layers. The quantum well structure of this name here particularly comprises a structure in which the charge carriers can undergo a neutronization of their energy state by confinement. This name quantum well structure does not point out the dimensions of quantization here. -20- 200917601 Therefore, quantum well structures can additionally include quantum wells, quantum wires and quantum dots, as well as each combination of these structures. Then, a layer structure for a semiconductor body whose emitter region is used to generate radiation having a wavelength of 1050 nm will be described. The chestnut zone 3 has a thickness of 6. 5nm Ino. 13Gac1. 87As-quantum layer. The waveguide layer 351 is constructed in two layers. A thickness 7 3. 57nm AlmGao. The As-first semiconductor layer is adjacent to the quantum layer 3. The second semiconductor layer of the waveguide layer 351 is an AlmGamAs-semiconductor layer having a thickness of 485 nm. The second waveguide layer 352 is formed corresponding to the first waveguide layer 351 with the hexagonal portion 1 separated by the pump region 3. + 23〇&〇. The 77-member 8-semiconductor layer has a different thickness 78 than pumping zone 8. 7 9nm. Adjacent to the waveguide 35, the outer cover layers 3 1 and 3 2 are respectively Alo having a thickness of lOOOnm. 47Gao. 53As-semiconductor layer. The semiconductor layers disposed on different sides of the pumping zone 3 may suitably have opposite conductivity types, respectively. For example, the semiconductor layer 35 1, 31 disposed on the side of the pump region 3 facing the emitter region 4 is a p-dopant and is disposed in the pump region 3 away from the emitter region 4 The semiconductor layer 3 52 ' 32 on this side is an n-dopant or vice versa. The mirror 5 is constructed in a Bragg-mirror having 30 pairs of semiconductor layers. Each of the semiconductor layer pairs has an A1 As-semiconductor layer 51 having a thickness of 8 8 nm and a GaAs-semiconductor layer 52 having a thickness of 75 nm, respectively. The emitter region 4 for generating the emitted radiation has a sequence of 14 quantum layers U, and a barrier layer 42 is formed between the layers. The quantum layer -21 - 200917601 41 is composed of an InGaAs-semiconductor layer having a thickness of 10 nm. The barrier layer includes a pair of semiconductor layers having a GaAsP-semiconductor layer having a thickness of 48 nm and an AlGaAs-semiconductor layer having a thickness of 93 nm and an aluminum content of 10%. On the side of the emitter region 4 remote from the chestnut region 3, a window layer 25 is formed which is permeable to radiation generated in the emitter region. This window layer is constructed in a two-layer manner in which an AlGaAs-semiconductor layer having a thickness of 308 nm and an aluminum content of 10% is adjacent to the emitter region. A GaP·semiconductor layer having a thickness of 551 nm is flush with the semiconductor body 2 and forms the radiation transmissive surface 20. By varying the semiconductor layer parameters (especially the material composition or the layer thickness of the quantum layer), the pump region and the emission wavelength of the emitter region can be adjusted over a wide range of limits. A cross-sectional view of a second embodiment of a radiation-emitting semiconductor component is shown in FIG. The second embodiment is basically the same as the first embodiment of Fig. 1. The difference is that the coupling structure 7 has a zigzag structure. As shown in the first embodiment, each of the notches 71 forming the coupling structure is formed in the semiconductor body 2 and extends inward into the waveguide 35. The period length of the coupling structure is preferably 0. of the wavelength of the pump radiation generated in the pump zone 3. 6 times to 1. 4 times between. The coupling structure may also differ from the above-described form in that it primarily steers the pump radiation due to reflections on the coupling structure. In this case, the coupling structure preferably has sides that are erected obliquely to the vertical direction. Here, the coupling structure is not necessarily formed in a periodic form. A periodic structure -22-200917601 can be roughly a zigzag structure and its period is much larger (at least about 5 times) than the wavelength of the pump radiation. This periodic structure is suitable here. A cross-sectional view of a third embodiment of a radiation-emitting semiconductor component is shown in FIG. The third embodiment is basically the same as the first embodiment shown in Fig. 1. The difference is that the radiation-emitting semiconductor component has a further semiconductor body ′ which comprises a further semiconductor layer sequence 200, wherein the emission region 4 and the mirror surface 5 are formed in this further semiconductor body. The emitter zone 4 and the pump zone 3 are therefore not integrated in a single stone body in a common semiconductor body. The further semiconductor layer sequence 200 is connected to the semiconductor body 2 by a compound layer 9. This compound layer 9 can be irradiated through the pump and can, for example, comprise a binder. The mirror surface 5 can also be formed on the semiconductor body 200 or on the semiconductor body 2, unlike the first embodiment. In this case, the mirror is formed by a dielectric layer deposited on the preformed semiconductor body or deposited on another prefabricated semiconductor body by evaporation or spatula. Alternatively, the mirror may also be integrated with the pumping zone 3 in the semiconductor body 2. The semiconductor body 2 and the other semiconductor body 200 can be made separately and then fixed to each other. The manufacture of the semiconductor body with the pumping zone 3 and the manufacture of the semiconductor body with the emitting region 4 can thus be carried out independently of one another. Furthermore, the difference from the first embodiment is that a non-linear optical component is disposed between the radiation-emitting semiconductor component 1 and the outer mirror surface 8. At least a portion of the emitted radiation produced in the emitter region 4 converts -23-200917601 into radiation of another wavelength by a non-linear-optical process, particularly a frequency multiplication (substantially twice) process. Of course, the semiconductor component that emits radiation in accordance with one of the embodiments of Figures 1 and 2 can also operate with a non-linear optical component. Figure 4 shows the simulation results of the intensity of the pump radiation after steering by the coupling structure as a function of the angle β formed in the vertical direction. Fig. 4 shows an enlarged range of angles from 1 degree to 5 degrees and from -67 degrees to -73 degrees, respectively. This simulation is carried out by means of the so-called "Finite Difference Time Domain" method. This simulation has shown the effect of the coupling structure relative to the waves incident on the coupling structure from one side. The positive angle of the diffracted radiation corresponds to the diffraction in the forward direction, and the negative angle corresponds to the diffraction in the backward direction. The simulation is based on pump radiation with a vacuum wavelength of 920 nm and a refractive index of 3. At 4 o'clock, the notch of the coupling structure has a vertical dimension of 500 nm, a lateral dimension of 135 nm, and a period length of 270 nm. The period length is almost equal to the wavelength of the pump radiation in the region of the coupling structure (920 nm / 3. 4). The recesses are thus invaded by air. By the coupling structure, most of the diffracted intensity I is diverted to a range that is at a small angle with respect to the vertical. In the example shown, most of the radiation is diffracted to an angle of less than 4 degrees. The optical pump of the launch area can therefore be simplified. In contrast, Figure 5 shows a corresponding simulation of a semiconductor component in which the coupling structure is not provided. In this case, scattering occurs mainly in the forward direction. The pump radiation does not effectively steer in the direction of the emitter zone to -24- 200917601 at a small angle of approximately 20 degrees or less from the vertical. According to the simulation that has been carried out, about 38% of the pump radiation power can be incident into the emission region by the coupling structure, but only about 11% of the pump radiation power reaches when the coupling structure is not provided. In the launch area. Therefore, by the coupling structure, the enthalpy of the incident rate can be increased to more than three times. Figure 6 shows the simulation of the intensity of the pumped radiation as a function of expansion along the transverse direction X. Starting from the axis in the emitter region, the center axis represents the zero point of the X-axis, and the intensity shown in arbitrary units represents a strength 値 in a region greater than 4 5 # m in two directions, which is between 0. 2 and 0. Between 35. Therefore, the pump radiation can be made to be uniformly incident into the emission area in the lateral direction X. The optical pump of the emitter zone can thus be simplified. Figures 7A through 7E are diagrams showing an embodiment of a method of fabricating a semiconductor component that emits radiation in a vertical direction in accordance with an intermediate step shown in a plurality of cross-sectional views. This manufacturing method describes an example of a method of manufacturing a semiconductor component, which corresponds to the first embodiment of Fig. 1. As shown in Fig. 7A, the semiconductor layer sequence for forming the semiconductor body 2 is first deposited on the growth substrate 21. This is preferably achieved in an epitaxial manner (for example, Μ B E or MOVPE). The semiconductor layer sequence comprises a pump zone 3 and an emitter zone 4 and a mirror 5 arranged between the pump zone 3 and the emitter zone 4. The pump zone, the emitter zone and the mirror surface are thus integrated in a single crystal body in a single stone. Thus, the process can be carried out in a common epitaxial step. Then, the material of the emitter region 4 and the mirror-25-200917601 face 5 is removed in a regional manner as shown in Fig. 7. An outer cover layer 31 disposed between the waveguide 35 and the emitter region 4 is thus exposed. A first contact region 61 is deposited on the outer cover layer 31 in the exposed area. This is preferably achieved by evaporation or sputtering, in which case the contact zone can also be constructed in multiple layers. The growth substrate 21 is removed from the semiconductor body 2 having a semiconductor layer sequence. This is achieved, for example, by mechanical means (e.g., honing, buffing or polishing) and/or chemical means (e.g., 'wet chemistry or dry chemical etch). Alternatively, the growth substrate can be removed by coherent radiation (e.g., laser radiation). In this manner, the outer cover layer 3 2 disposed on the side of the pump zone 3 remote from the emitter zone 4 can be accessed during structuring. The semiconductor body 2 in which the growth substrate is removed is shown in Fig. 7C. The coupling structure 7 shown in Fig. 7D is formed by a recess in the semiconductor body 2. Each recess 71 is preferably structured by lithography and subsequently fabricated by wet chemical or dry chemical etching. At least a portion of each of the recesses 7 1 is interposed with a dielectric material (not explicitly shown). V then deposits a second contact zone 62 on the side of the pumping zone 3 remote from the emitter zone 4. The deposition of the second contact region can also be achieved by evaporation or sputtering. The fabricated semiconductor component 1 is shown in Fig. 7E. This patent application claims the German patent application DE 10 2007 045 306. 1 and DE 10 2007 061 481. The priority of 2 is hereby incorporated by reference in its entirety. The invention is of course not limited to the description made in accordance with the various embodiments. Conversely, the present invention encompasses each new feature and every combination of features, and in particular, -26-200917601 includes each of the patent claims - or each combination of individual features of the different embodiments ' when related features or related combinations The present invention is also not explicitly shown in the respective SP3 patents or in various embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a semiconductor component that emits radiation. Figure 2 is a cross-sectional view showing a second embodiment of the semiconductor component of the strobe. Figure 3 is a cross-sectional view of a third embodiment of a semiconductor component that emits radiation. Figure 4 shows the simulation results of the return intensity of the chestnut radiation as a function of the angle 0 formed in the vertical direction. Figure 5 shows the corresponding simulation results for components without coupling structures. The simulation results of the return intensity of the second chestnut radiation as it expands in the lateral direction. Sections 7 to 7 are an embodiment of a method for fabricating a radiation-emitting semiconductor component in accordance with a plurality of intermediate steps shown in the cross-sectional view. [Main component symbol description] 1 Radiation-emitting semiconductor component 2 Semiconductor body 20 having a semiconductor layer sequence Radiation transmitting surface 200 - Semiconductor nJ22 · Body 21 Growth substrate 25 Window layer 3 Pump region 30 Pumping side 3 1 Cover layer -27- 200917601 32 Further - outer cover layer 35 waveguide 35 1 first - waveguide layer 352 second waveguide layer 4 emitter region 4 1 quantum layer 42 barrier layer 5 mirror surface 5 1 first m surface layer 52 second mirror layer 61 —- Contact products - 62 Second contact products - 7 Series twisted structure 7 1 Recessed □ 7 10 Side edge of concave P 8 External mirror 85 Nonlinear - Optical element 9 Compound layer