201230566 六、發明說明： 【發明所屬之技術領域】 本發明係關於光電子工程之重要組件，亦即係關於 一寬波長範圍之多束同調發射（具有水平及垂直發射輸出） 的緊湊、高㈣、高效率雷射二極體源，該源係為主二極 體雷射與二極體光學放大器之兩級組合所製造。 【先前技術】 具有增加之輸出功率及改良之雷射束品質的二極體雷 射自以下發明而得知：[美國專利4〇63189，Xer〇x c〇rp， (US ) ’ 1977，HOIS 3/19，331/94.5 Η]、[俄羅斯專利201230566 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an important component of optoelectronic engineering, that is, a compact, high (four), multi-beam coherent emission (with horizontal and vertical emission output) over a wide wavelength range. A high efficiency laser diode source fabricated from a two-stage combination of a primary diode laser and a diode optical amplifier. [Prior Art] A diode laser having an increased output power and improved laser beam quality is known from the following invention: [US Patent 4〇63189, Xer〇xc〇rp, (US) '1977, HOIS 3 /19,331/94.5 Η], [Russian patent
2197048，V.I. Shveikin、VA· Gelovani，18.02.2002，HOI S 5/32]。 自技術本質及所獲得之技術成果之觀點而言，例示性 原型注入式（在下文被稱作二極體）雷射提議於[俄羅斯專 利 2278455，V.I. Shveikin ’ 17.11.2004，H01S 5/32]中。該 二極體雷射包括基於半導體化合物之異質結構、光學小 面、反射器、歐姆接觸、光學諧振器.該異質結構之特徵 在於：該異質結構之有效折射率I"對導入層㈠㈡心化) 之折射率nIN的比率（亦即，neff對n〗N之比率）係由自加上 一德耳塔（delta)至減去一德耳塔之範圍來確定，其中德耳塔 係藉由遠小於一之數值來確定。該異質結構含有至少一個 主動層、至少兩個反射層（該主動層之每一侧上至少一個 反射層），該等反射層至少由一子層形成且具有小於該異質 6 201230566 結構之有效折射率η…的折射率。該異質結構亦含有雷射發 射導入區，該雷射發射導入區對於發射而言透光。該導入 區為至少一個且位於該主動層與一對應反射層（至少在該 主動層之-側上）之間。該導入區包括：雷射發射導入層， 該雷射發射導入層具有一折射率ηΐΝ且至少由—子層組成； 至少一個約束層（confining layer )，該至少_個約束層至少 由一子層組成；主要調整層，該主要調整層至少由一子層 組成，該主要調整層之該等子層中之一者至少具有不小於 該導入層之折射率nIN的折射率，且該主要調整層之一表面 鄰近於該主動層。在該主要調整層之相對側上，該導入區 之約束層鄰近於該主要調整層之另一表面。該約束層具有 小於該主要調整層之折射率的折射率。該等光學#振器反 射器之反射係數以及異質結構層之組成物及厚度經選擇， 以使得對於操作中之二極體雷射而言，主動層中之發射的 所得放大足以貫穿操作電流範圍而維持一雷射放光臨限 值。吾人已將二極體雷射之此構造稱為基於具有導入區之 異質結構的二極體雷射’該異質結構之特徵在於：在雷射 放光臨限電流之領域中# neff f“iN之特定比率。對於給定 異質結構，在雷射放光臨限電流之領域中的_ Μ比率 係由自加上-伽瑪（gamma)至減去—伽瑪之值範圍來確 定，其中伽瑪之值係藉由小於量差之數值來確定。 原型二極體雷射之主要優點為：雷射輸出功率之增 大、垂直平面中發射區域之大小的增加，以及發射之角# 散的對應減少。同時，該原型二極體雷射限制輸出功率: 7 201230566 進一步增加以及同時發生的高品質之雷射發射，亦即，該 原型二極體雷射並未將多束同調發射之高功率單頻二極體 源（具有接近一之完整性因數M2)實現為：在水平平面與 垂直平面兩者中具有放大雷射發射之輸出的主二極體雷射 與二極體光學放大器之兩級整合式組合。 【發明内容】 在一寬波長範圍中具有水平發射輸出與垂直發射輪出 兩者之多束同調放大雷射發射的所提議之二極體源的技術 成果為：針對穩定單頻及單一模式雷射類型之振盪的該二 極體源之放大雷射發射之輸出功率的多倍（一至三倍及更 大之數量級）增加；效率、可靠性、使用期限及調變速度 之增加；以及源製造技術之顯著簡化及生產成本的削減。 本發明之一態樣為一種多束同調雷射發射之二極體源 (在下文被稱作DSMCLE ) ’該二極體源含有：至少一個、 至少單一模式單頻主二極體雷射，在下文被稱作主雷射； 至少一個二極體光學放大器，在下文被稱作線性放大器， °亥至少一個二極體光學放大器與該主雷射整體地且以光學 方式連接；至少兩個二極體光學放大器，在下文被稱作垂 直放大器，該至少兩個二極體光學放大器與該線性放大器 整體地且以光學方式連接。 該主雷射及該線性放大器與該等垂直放大器係形成於 —基於半導體化合物之共同異質結構中。該異質結構含有 至少—個主動層、至少兩個約束層及一使得對於雷射發射 8 201230566 透光之雷射發射導入區。該導入區置放於該主動層與 對應約束層之間且含有至少一個導入層。該異質結構之 特徵在於.異質結構之有效折射率neff對該導人層之折射 率㈣的比率（亦即’ n“f對nIN之比率）係在自一至減去一 馬=範圍内，其中伽瑪係藉由遠小於一之數值來確定。 。該主田射包括：主動條帶雷射放光區，該主動雷射放 光區具有連接之金屬化層；發射約束區，該發射約束區具 有連接之、’、邑緣層，邊約束區位於該主雷射之該主動雷射放 光區之每一橫向側上；以及歐姆接觸、光學小面、反射器、 光學諧振器。沈積於該光學諧振器之末端上的該光學諧振 器之忒等反射器具有接近一之反射係數且位於該主動層之 位置的指定附近區域中。 包括具有連接之金屬化層的至少一個主動放大區的每 一線性放大器經定位，以使得該主雷射之發射的傳播之光 軸與該線性放大器之光軸重合。該主雷射與該等線性放大 器之該整體連接係經由該導入層而實現。 包括具有連接之金屬化層的至少一個主動放大區及具 有光學抗反射塗層之一光學輸出面的每一垂直放大器經定 位’以使得該垂直放大器之光軸相對於該線性放大器之該 光軸成一直角（模數）而定位。 在該線性放大器之該光軸與每一垂直放大器之該光軸 相交的附近區域中，存在使雷射發射之一指定部分自該線 性放大器流動至該垂直放大器的整體元件，該整體元件任 意地被稱為旋轉元件。該旋轉元件由垂直於該等異質結構 201230566 層之平面的至少一個光學反射平面組成，在該導入層之厚 度的20。/。至80%内橫跨該主動層及該異質結構導入區之部 分，且使相對於該線性放大器之該光軸及該垂直放大器之 該光軸的傾斜角為約45° (模數）。（本段中提及之約束層在 專利第2278455號中的原型裝置中被稱為反射層。） 基於原始異質結構而製成的所提議之新DSMCLE的實 質區別在於：主二極體雷射（在下文被稱作主雷射）與整 合式線性二極體光學放大器（在下文被稱作線性放大器） 連接的有效兩級整合式組合，該線性放大器又與整合式垂 直二極體光學放大器（在下文被稱作垂直放大器）連接。 該所提議之DSMCLE的新賴性在於：該主雷射與該等放大 器之該整體連接係在無聚焦光學器件之情況下進行的。在 第一級，實現該主雷射與該線性放大器之該整體連接，在 此狀況下，該主雷射與該線性放大器之發射的傳播之光轴 的方向重合。在該線性放大器與該垂直放大器之整體連接 的第二級，該等放大器之光學發射的傳播之方向（亦即， 该等放大器之光軸之方向）相互垂直。雷射發射自該線性 放大器至該等垂直放大器的流動係藉由使用原始旋轉元件 來進行，該等原始旋轉元件置放於該等垂直放大器之主動 區至該等線性放大器之主動區之橫向側的連接處。 在以下兩者中達成該技術 該不對稱異質結構中，基板之 層的該厚度超過該異質結構之 之该導入層的該厚度；及對稱 成果：不對稱異質結構，在 側上的s亥導入區中之該導入 外部層之側上的該導入區中 異質結構，在該對稱異質結 10 201230566 導入區中之該導入層 之側上的該導入區中 的該厚度 之該導入 構中，該基板之該側上的該 等於該異質結構之該外部層 層的該厚度。 在較佳具體實例中，該主雷射之該光學言皆振器的該等 反射器係在每—光學面上自該異質結構表面至該導入區中 之-深度處’肖深度未到達該基板之該侧上的該約束層。 在此狀況下，該主雷射（無聚焦光學器件且實際上無損曰失) 與兩個線性放大器中之每—者的該整體連接主要係經由該 異質結構之該導入層的深埋部分來進行，省略了該主命射 之該光學諸振器的不透光反射器（在該主雷射之=光:错 振器之該等光學小面的兩側上，形成（藉由塗層之沈積） 反射係數接近一之該等反射器雷射放光臨限值之獲得係 在一光學諧振器（不透光光學諧振器）中進行，該光學諧 振器在兩側上包括針對兩個高強度鏡面具有一最大高反射 係數之反射器。該不透光光學諳振器構造之奇特性在於： 該不透光光學讀振器構造之兩個反射器實際上完全反射自 該雷射之該主動層射出之發射，且自該所提議的修改之異 質結構的該導入層來實現雷射發射輸出，省略了該光學諧 振器之該等不透光反射器。 在較佳具體實例中，該線性放大器可位於該主雷射之 該光學諧振器之端側上，且在該光學諧振器之每一端側上 可存在一線性放大器。 在較佳具體實例中，該主雷射提供一基諧模下之雷射 放光，且在必要時提供單頻雷射放光。為了達成穩定單頻 11 201230566 雷射放光（以及單頻坰扯、us： ^ _ 屈’拍）’將該主雷射之該光學諧振器的 該等反射器製成為分散式布拉格反射器（Bugg afleeter ) 〇 在較佳具體實例+，在該主雷射之該橫向約束區中， 存在至少-個分割約束子區及至少一個約束子區，且具有 一指定寬度之該分割約束子區係在該主雷射之該主動雷射 放光區之兩個橫向側上自該異質結構表面至一指定深度 處，該指定深度未到達該主動層之位置的深度，該約束子 區係在該分割約束子區之兩個橫向側上自該異質結構表面 至一指定深度處，該指定深度超過該主動層之位置的該深 度但未到達該約束層之位置的深度。該約束子區之不尋常 安放（橫跨該主動層）提供在增加之雷射輸出功率下的雷 射發射之模式穩定性。 在較佳具體實例中，該線性放大器之該主動區可製成 為一完全條帶區，或為完全可加寬的，或為可加寬的且具 有一至條帶部分之平滑過渡。在最新版本中，該線性放大 器之該主動區的該可加寬部分鄰近於該主雷射，且該可加 寬部为至s亥條帶主動區之該平滑過渡係在距該旋轉元件最 近之位置之前實現。 在較佳具體實例中，具有一指定寬度之一分割約束子 £鄰近於3亥線性放大器之該主動區的每一橫向側，該分宅】 約束子區經置放成自該異質結構表面至一指定深度處，該 指定深度未到達該主動層之位置的該深度》在必要時，一 約束子區連接至該分割約束子區之每一橫向側，該約束子 區經置放成自該異質結構表面至一指定深度處，該指定深 12 201230566 度超過5玄主動層之位置的t亥深度且未到達該約束層之位置 的該深度。 在較佳具體貫例中，在該線性放大器之該閒置光學小 面上的光學反射塗層具有一接近一之反射係數。 在較佳具體實例中，該垂直放大器之該主動區可製成 為凡王條帶區，或為完全可加寬的，或為可加寬的且具 2至條帶为之平滑過渡。在最新版本中，該垂直放大 器之該主動區的該可加寬部分鄰近於該線性放大器，且該 可加寬。卩分至該條帶主動區之該平滑過渡係在距該旋轉元 件一指定距離處實現。 在較佳具體實例中，具有一指定寬度之一分割約束子 區鄰近於該垂直放大器之該主動區的每一橫向側，該分割 勺束子區經置放成自該異質結構表面至一深度處，該深度 未到達该主動層之位置的該深度。在必要時，一約束子區 連接至該刀割約束子區之每一橫向侧，該約束子區經置放 成自該異質結構表面至—深度處，該深度超過該主動層之 位置的该深度但未到達該約束層之位置的該深度。 在較佳具體實例中，使被自該主雷射之該光學諧振器 的。亥反射器最大程度地移除的一旋轉元件之光學反射平面 穿透至該異質結構中，至少穿透至該基板之該側上的該約 束層。 在較佳具體實例中，在該垂直放大器之放大發射之輸 出的該等光學小面上的該光學抗反射塗層具有一接近零之 反射係數β 13 201230566 在較佳具體實例中’該旋轉元件之該光學反射平面具 有一為正45。之傾斜角，且緊接於該光學反射平面的該旋轉 兀件之該光學反射平面具有一為負45〇之傾斜角。此情形允 許在相反方向上實現發射輸出。 在較佳具體實例中，該共同異質結構含有至少兩個主 動層，該至少兩個主動層藉由之間具有隧道過渡的p型及n 型之薄的重摻雜層而電連接至彼此。 在較佳具體實例中，該主雷射、該等線性放大器及該 等垂直放大器具有獨立之歐姆接觸。 。在較佳具體實例中，沿著至少一個垂直放大器之該主 動區、在兩倍放大之雷射發射的傳播之該光轴的方向上、 在距該旋轉元件一特定距離處’存在至少一個額外引入之 輸出元件該至少一個額外引入之輸出元件包括至少一個 光學反射平面，該至少一個光學反射平面以一為45。(模數) 之傾斜角橫跨若干個®暂6士 签, c τ 吳質、纟。構層之平面，包括該主動層且 部分包括該導入層（亦即，兮道 尽、π即，該導入層之厚度之3〇%至8〇%)〇 此決策對於達成以下曰达 目的而5為必要的：實現在垂直於該 主動層之平面的方向j白士女望舟 Π上自5亥專垂直放大器之該等主動區的 放大雷射發射的輸4 (所謂的放大雷射發射的垂直輸出） (在下文中’具有垂直發射輸出之該DSMCLE被稱為 DSMCLE-VE)。在光軸之方向上引入的該等原始輸出元件包 括一光學反射平面，节古與；54+τ . w先子反射平面跨越該垂直放大器之 該主動£置放且以—為描制·、 馬45 (模數）之傾斜角自該外部 透至該發射導入層中。μ令担4 曰τ上文k礅之所有DSMCLE具體實例 201230566 與此具體實例相容。 本發明中所提議之該不明顯DSMCLE的本質在於：用 於單-模式（及單頻）主雷射、線性及垂直放大器的該所 提議之共同異質結構’丨中在垂直於該異質結構之該主動 層的平面中具有無比大尺寸之近發射場。本發明之本質亦 在於整體連接之原始的且有效的兩級程序：在該第一級的 單頻、單一模式主雷射與線性放大器之該連接，在該第二 級的線性放大器與垂直放大器之該連接。在此狀況下，該 等垂直放大器之該等主動區相對於該等線性放大器之該等 主動放大區成一直角而置放。雷射發射之一指定部分自該 等線性放大器至該等垂直放大器之流動係藉由所引入之原 始旋轉元件而實現，該等所引入之原始旋轉元件置放於該 專線性放大器之該等主動區與該等垂直放大器之該等主動 區之相交處。此外’藉由引入沿著該等垂直放大器之光軸 置放的原始整體輸出元件，實現超高功率的多束高品質放 大雷射發射的原始的且有效之輸出’該發射係相對於該等 異質結構層之平面垂直地引導（在該異質結構之該外部層 的方向上及在半導體基板之方向上）。 本發明中提議之該DSMCLE的技術實現係基於迄今已 發展良好且得到廣泛使用的已知基本技術製程。該提議滿 足了「工業適用性」準則。該DSMCLE之製造之主要區別 在於：該異質結構之特徵，及該主雷射與該線性放大器及 該等線性放大器與該等垂直放大器之該等整體連接。 15 201230566 【實施方式】 在下文將結合圖1至圖8來詳細描述本發明。 在下文中’參看所包括之圖式藉由具體的具體實例之 描述來解釋本發明。具有水平發射輸出及垂直發射輸出的 多束同調雷射發射的二極體源（DSMCLE )(具有垂直發射 輸出的多束同調雷射發射的二極體源被稱為DSMCLE-VE ) 之具體實例的給定實例並非唯一的實例，且設想其他實現 之可用性（包括已知之波長範圍），該等DSMCLE之特徵根 據申請專利範圍在區別之總結中得到反映。 所提議之DSMCLE 10(參見圖1至圖2)含有在基諧 模下雷射放光且與兩個線性放大器30整體連接的單一模式 主雷射20，該兩個線性放大器30在兩個端側上連接至主雷 射20。不透光光學反射器21置放於雷射光學諸振器之末端 處（進一步參見第11頁、第1段、第3行至第8行）。在外 部光學小面32上具有抗反射塗層33之線性放大器30又藉 由使用旋轉元件70而與具有可加寬主動放大區41之垂直 放大器40整體連接。放大雷射發射的輸出係經由四個垂直 放大器40中之每一者的抗反射光學小面42來進行。 DSMCLE 10係基於主雷射20與該等二極體放大器3〇 及40的共同雷射異質結構50而製造《異質結構50係在n 型GaAs之基板60上成長。線性放大器30與垂直放大器4〇 之整體連接係藉由使用旋轉元件70而實現。異質結構5〇 係基於AI GaAs半導體化合物而成長，異質結構5〇具有— 為In AIGa As之主動層51。藉由主動層51之組成物及厚度 16 201230566 確定的雷射波長經選擇以等於0 976 μιηβ 在基板60之側上，第一導入區（包括調整層53及導 入層54)位於主動層51與約束層52之間。在相對側上， 第一導入區56(包括調整層及導入層）位於主動層51與約 束層55之間，ρ型之半導體接觸層57鄰近於第二導入區 %。金屬化層及對應絕緣介電層未展示於諸圖中。事實上， 位於約束層52與55之間的異質結構5〇之所有層的集合形 成可延伸之波導區。該等導入層係由AIGaAs製成。在基板 6〇之側上的導入層54之厚度經選擇以等於6从爪，該厚度 為大於相對側上之導入層之厚度的數量級。在〇 3 kA/cm2 及5 ·0 kA/cm2之電流密度下，異質結構5〇之有效折射率 對導^層54之折射率niN的所計算之比率（neff/niN)的值 分別等於 0.999868 及 0.999772。 基於上文所描述之異質結構5〇,形成整體連接之一個 主雷射20、兩個線性放大器3〇及四個垂直放大器糾。在 二極體雷射20之光學諧振器之光學面22上的兩側上，形 成（藉由塗層之沈積）反射係數接近一之反射器2ι (不透 光光學反射器21)。經由深埋之導入層54而實現主雷射2〇 與線性放大器30之整體連接，省略不會到達基板6〇之側 上的約束層52的不透光反射器21。將主雷射2〇之主動雷 射放光區23製造為具有9 之條帶寬度的條帶區，光學 "白振器之長度經選擇以等於丨〇〇〇以⑺。兩個線性放大器 中之每一者中的條帶主動放大區31之寬度及長度（參見第 16頁上之位置）分別為12 及2〇〇〇 。在每一線性放 17 201230566 大器3 0之外部光學小面3 2上’沈積反射係數接近零（小 於0.0001 )之抗反射塗層33。 藉由將兩個旋轉元件70置放於條帶主動放大區31中 (參見第16頁上之位置）而實現每一線性放大器3〇與兩 個垂直放大器40之間的整體光學連接。藉由蝕刻製成之每 一旋轉元件70包括光學反射平面71，光學反射平面71與 異質結構50之該等層的平面成直角而定位且在内部自接觸 層57垂直地穿透至導入層54、至導入層54之厚度的60%。 在此狀況下，旋轉元件70之該反射平面71相對於在線性 放大器30與兩個垂直放大器4〇中的放大發射之傳播的光 軸成45°角（模數）而翻轉。使每一垂直放大器4〇之主動 放大區41為可加寬的，具有6。之加寬角。在垂直放大器之 長度為5000 μηι之情況下，輸出放大發射之光學小面42之 寬度為250 μηι。在每一線性放大器4〇之輸出光學小面42 上’沈積反射係數接近零（小於0·0001 )之抗反射塗層43。 使具有相同之主要特性的橫向約束區80在兩個橫向側 上鄰近於主雷射20之條帶主動雷射放光區23,而且鄰近於 兩個線性放大器30之每一條帶主動區3 1且鄰近於四個垂 直放大器40之每一可加寬主動區41。該等區8〇含有兩個 子區（諸圖中未示）。與該等區23、31及41鄰接的第—條 帶分割約束子區係藉由蝕刻為2.0 μπι之寬度至0.7 之深 度但未到達異質結構5 0之主動層5 1所處之深度的凹槽而 形成。與該第一子區鄰接之第二約束子區係藉由蝕刻為橫 跨主動層51所處之平面的凹入凹槽且穿透至導入層54中 18 201230566 至導入層54之厚度的60%而形成。兩個凹槽填充有介電質。 DSMCLE 10 (諸圖中未示）之以下具體實例與圖丨至 圖2中表示之具體實例的不同之處在於：在此具體實例中， 光學諧振器之不透光反射器21形成為提供主雷射之穩定單 頻雷射放光的分散式布拉格反射器。 DSMCLE 10 (諸圖中未示）之以下具體實例與圖】至 圖2中表示之具體實例的不同之處在於：在此具體實例中， 共同異質結構50含有至少兩個主動層，該至少兩個主動層 藉由之間具有隧道過渡的p型及n型之薄的重摻雜層而電 連接至彼此。 DSMCLE 10 (諸圖中未示）之以下具體實例與圖！至 圖2中表示之具體實例的不同之處在於：此具體實例含有 五十個垂直放大器40及五十個旋轉元件7〇，每一線性放大 器30之長度為20,000 μπι。 DSMCLE 10(參見圖3)之以下具體實例與圖i至圖2 中表示之具體實例的不同之處在於：在此具體實例中使 最接近於主雷射的每一（兩個中之每一）主動放大區34在 其初始部分令為可加寬的，該初始部分具有至具有卩爪 之條帶寬度的條帶部分31的平滑過渡。將垂直放大器4〇 之每一主動放大區44製成為條帶主動放大區44。此外，在 大邛分自主雷射20之光學小面22移除的每一旋轉元件7〇 中，光學反射平面72穿透至導入層54中至導入層54之厚 度的100%。在此狀況下，不再存在製造用於線性放大器Μ 之抗反射塗層33的必要性。請注意，在圖3及圖4至圖6 19 201230566 中，未展示橫向約束區。 DSMCLE 10 (諸圖中未示）之以下具體實例與先前具 體實例之不同之處在於：在此具體實例中，鄰近於具有至 線性放大器30之條帶區34及至條帶主動放大區3 1的平滑 過渡的可加寬主動放大區的橫向約束區8 0僅由一分割約束 子區組成。 DSMCLE 10 (諸圖中未示）之以下具體實例與先前具 體實例之不同之處在於：在此具體實例中，鄰近於垂直放 大器40之條帶主動放大區44的橫向約束區80僅由一分割 約束子區組成。 DSMCLE 10 (參見圖4)之以下具體實例與圖3中表示 之具體貫例的不同之處在於：在此具體實例中，在每一線 性放大器30之主動放大區31中，光學反射平面72相對於 旋轉元件70之光學反射平面71成直角（9〇。）而翻轉。在 此狀況下，在藉由旋轉元件70之該等光學反射平面71及 72而連接至線性放大器3〇的垂直放大器4〇中輸出之放 大雷射發射係在相反方向上傳播。 DSMCLE 10 (參見圖5 )之以下具體實例與圖3中表示 之具體實例的不同之處在於：在此具體實例中，線性放大 器30與主雷射20之整體連接僅在主雷射2〇之一側上進 行。雷射發射係在不透光反射器21之下經由導入層Μ之 部分而傳播至具有至線性放大器3G之條帶區Μ的平滑過 渡的可加寬主動放大區。在光學諧振器之相對側上，不透 光反射器形成於裂開之光學面22上。線性放大器之 20 201230566 剩餘：分具有三個條帶主動放大區31(諸如圖3中）。線性 放大益至四個垂直玫大器4〇之整體連接係經由具有對應光 學反射平面71及72之旋轉元件7〇 (藉由飯刻製成）而實 現每垂直放大器40具有可加寬主動放大區41，且最接 近於主雷射之可加寬主動放大區連接至主動放大區34之條 帶部分，其他可加寬主動放大區連接至三個條帶主動放大 區3卜相對於異質結構5〇之該等層的平面成直角而定位之 二個反射平面71在内部自接觸層57垂直地穿透至導入層 54中至導入層54之厚度的5〇%，且將一個主動放大區34 及兩個後續主動放大區31與對應的可加寬主動放大區41 連接。光學反射平面72 (與平面71成對比）在内部垂直地 穿透至約束層52,光學反射平面72提供對放大射束之1〇〇% 反射且將主動放大區31與大部分移除之可加寬主動放大區 41連接。在此狀況下’不再存在在線性放大器3〇之外端面 上製造抗反射塗層3 3的必要性。 DSMCLE l〇nxf具體實例與先前具體實例的不同之 處在於：在此具體實例中’形成至主雷射2〇、至線性放大 器30及至垂直放大器40的獨立（分離）歐姆接觸，該等 歐姆接觸係藉由在歐姆金屬化層（諸圖中未示）之間引入 薄的分割條帶而實現。 在以下的圖6、圖7、圖8中表示的被稱為DSMCLE-VE 100的具有垂直發射輸出之DSMCLE的以下具體實例與上 述DSMCLE具體實例的不同之處在於：在垂直放大器40 中，沿著該等主動放大區藉由蝕刻額外形成兩個及兩個以 21 201230566 上之整體輸出元件110。該等元件11〇形成於距旋轉元件7〇 特定距離處及該等元件110彼此之間的特定距離處，且經設 计以在相對於異質結構50之該等層的平面之垂直方向上輸 出放大雷射發射。 DSMCLE-VE 1〇〇 (參見圖6及圖7)之以下具體實例 與先前具體實例的不同之處在於：在此具體實例中，藉由 蝕刻而形成之每一整體輸出元件11〇包括跨越條帶主動放 大區44而置放的光學反射平面ln以達成放大雷射發射。 該平面111橫跨異質結構5〇之該等層（包括主動層5◦之 平面以負45。之傾斜角穿透至導入層54中至導入層54之厚 度的65%»對於大部分自旋轉元件7〇移除之輸出元件ιι〇 而言，光學反射平面112穿透至導入層54中至導入層54 之厚度的100%。在基板60之外側61上的放大雷射發射的 輸出處，形成反射係數小於0.0001之抗反射塗層113。在 基板60之剩餘閒置表面上的金屬化層及抗反射塗層ιΐ3未 展示於圖7中。 DSMCLE-VE 100 (參見圖6及圖8)之以下具體實例 與先前具體實例的不同之處在於：在此具體實例中，整體 輸出元件110之光學反射平面lu的傾斜角為正45。。在此 具體貫例中’放大雷射發射的輸出係在與基板之位置相 反的方向上相對於異質結構50之該等層的平面成直角而實 現。在此狀況下，在放大雷射發射的輸出處，在移除重摻 雜之接觸層57及約束層55之後，沈積反射係數小於〇.〇〇〇1 之抗反射塗層113。在接觸層57之剩餘閒置表面上的金屬 22 201230566 化層未展示於圖8中。2197048, V.I. Shveikin, VA Gelovani, 18.02.2002, HOI S 5/32]. An exemplary prototype injection (hereinafter referred to as a diode) laser is proposed from the viewpoint of the nature of the technology and the technical results obtained [Russian Patent 2278455, VI Shveikin ' 17.11.2004, H01S 5/32] in. The diode laser includes a heterostructure based on a semiconductor compound, an optical facet, a reflector, an ohmic contact, and an optical resonator. The heterostructure is characterized by: an effective refractive index of the heterostructure I" cardiacization of the introduced layer (1) (2) The ratio of the refractive index nIN (i.e., the ratio of neff to n) N is determined by adding a delta to the range minus one delta, wherein the delta is used by It is much smaller than the value of one to determine. The heterostructure comprises at least one active layer, at least two reflective layers (at least one reflective layer on each side of the active layer), the reflective layers being formed by at least one sub-layer and having an effective refraction smaller than the heterogeneous 6 201230566 structure The refractive index of the rate η... The heterostructure also contains a laser emission lead-in area that transmits light for emission. The lead-in area is at least one and is located between the active layer and a corresponding reflective layer (at least on the side of the active layer). The lead-in area includes: a laser emission introducing layer having a refractive index η ΐΝ and consisting of at least a sub-layer; at least one confining layer, the at least one constraining layer being at least one sub-layer a primary adjustment layer, the primary adjustment layer being composed of at least one sub-layer, one of the sub-layers of the main adjustment layer having at least a refractive index not less than a refractive index nIN of the introduction layer, and the main adjustment layer One of the surfaces is adjacent to the active layer. On the opposite side of the primary adjustment layer, the constraining layer of the lead-in area is adjacent to the other surface of the primary adjustment layer. The constraining layer has a refractive index that is less than the refractive index of the primary conditioning layer. The reflection coefficients of the optical oscillators and the composition and thickness of the heterostructure layer are selected such that for the diode laser in operation, the resulting amplification of the emission in the active layer is sufficient to penetrate the operating current range And maintain a laser to the limit. We have referred to this configuration of the diode laser as a diode laser based on a heterostructure with a lead-in area. The heterostructure is characterized by: in the field of laser exposure to current limiting #neff f"iN Specific ratio. For a given heterostructure, the _ Μ ratio in the field of laser-limited current is determined by the range of self-added gamma to subtracted gamma, where gamma The value is determined by the value less than the difference. The main advantages of the prototype diode laser are: an increase in the output power of the laser, an increase in the size of the emission area in the vertical plane, and a corresponding decrease in the angle of the emission. At the same time, the prototype diode limit output power: 7 201230566 further increase and simultaneous high-quality laser emission, that is, the prototype diode laser does not transmit multiple beams of coherent high power single The frequency diode source (with an integrity factor M2 close to one) is implemented as two stages of a main diode laser and a diode optical amplifier having an output that amplifies the laser emission in both the horizontal plane and the vertical plane. Integrated group SUMMARY OF THE INVENTION The technical result of the proposed diode source having multiple beam-tuned amplified laser emissions of both horizontal emission output and vertical emission rotation in a wide wavelength range is: for stable single frequency and single mode Laser-type oscillating increases in the output power of the amplified laser emissions of the diode source (on the order of one to three times and greater); efficiency, reliability, lifetime, and modulation speed increase; Significant simplification of manufacturing technology and reduction in production cost. One aspect of the invention is a multi-beam synchrotron emitting diode source (hereinafter referred to as DSMCLE) 'the diode source contains: at least one, at least Single mode single frequency main diode laser, hereinafter referred to as main laser; at least one diode optical amplifier, hereinafter referred to as a linear amplifier, at least one diode optical amplifier and the main laser Integrated and optically connected; at least two diode optical amplifiers, hereinafter referred to as vertical amplifiers, the at least two diode optical amplifiers and the linear amplifier The main laser and the linear amplifier are formed in a common heterostructure based on a semiconductor compound. The heterostructure comprises at least one active layer, at least two constraining layers, and a laser emission lead-in area for laser emission 8 201230566. The lead-in area is placed between the active layer and the corresponding constraining layer and contains at least one lead-in layer. The heterostructure is characterized in that the heterostructure is effective The ratio of the refractive index neff to the refractive index (four) of the conductor layer (ie, the ratio of 'n'f to nIN) is in the range from one to minus one horse, where the gamma is by a value much smaller than one. determine. . The main field shot comprises: an active strip laser emitting area, the active laser emitting area has a connected metallization layer; a emission confinement area having a connecting, ', rim edge layer, edge confinement area Located on each lateral side of the active laser illuminating zone of the main laser; and ohmic contacts, optical facets, reflectors, optical resonators. The reflector of the optical resonator deposited on the end of the optical resonator has a reflection coefficient close to a reflection and is located in a designated vicinity of the position of the active layer. Each linear amplifier comprising at least one active amplification region having a connected metallization layer is positioned such that the optical axis of the propagation of the emission of the main laser coincides with the optical axis of the linear amplifier. The integral connection of the main laser to the linear amplifiers is achieved via the introduction layer. Included at least one active amplification region having a connected metallization layer and each vertical amplifier having an optical output surface of an optical anti-reflective coating positioned such that the optical axis of the vertical amplifier is relative to the optical axis of the linear amplifier Positioned in a right angle (modulo). In the vicinity of the optical axis of the linear amplifier intersecting the optical axis of each vertical amplifier, there is an integral component that causes a specified portion of the laser emission to flow from the linear amplifier to the vertical amplifier, the integral component being arbitrarily It is called a rotating element. The rotating element is comprised of at least one optically reflective plane perpendicular to the plane of the layers of the heterostructure 201230566, at a thickness of 20 of the introduced layer. /. The portion of the active layer and the heterostructure lead-in region is traversed to within 80%, and the tilt angle of the optical axis with respect to the optical amplifier and the optical axis of the vertical amplifier is about 45 (modulus). (The constraining layer referred to in this paragraph is referred to as the reflective layer in the prototype device of Patent No. 2278455.) The substantial difference between the proposed new DSMCLE based on the original heterostructure is: the main diode laser An effective two-stage integrated combination of an integrated linear diode optical amplifier (hereinafter referred to as a linear amplifier) (hereinafter referred to as a main laser), which is in turn integrated with an integrated vertical diode optical amplifier (referred to below as a vertical amplifier) connection. The new relevance of the proposed DSMCLE is that the overall connection of the main laser to the amplifiers is carried out without focusing optics. In the first stage, the integral connection of the main laser to the linear amplifier is achieved, in which case the main laser coincides with the direction of the optical axis of the propagation of the linear amplifier. In the second stage of the linear amplifier and the vertical amplifier, the direction of propagation of the optical emissions of the amplifiers (i.e., the direction of the optical axes of the amplifiers) is perpendicular to each other. The flow of laser radiation from the linear amplifier to the vertical amplifiers is performed by using original rotating elements placed in the active regions of the vertical amplifiers to the lateral sides of the active regions of the linear amplifiers. Connection. In the asymmetric heterostructure of the technique, the thickness of the layer of the substrate exceeds the thickness of the introduction layer of the heterostructure; and the symmetry result: an asymmetric heterostructure, the introduction of s on the side a heterostructure in the lead-in area on the side of the introduction outer layer in the region, in the introduction structure of the thickness in the lead-in area on the side of the introduction layer in the symmetrical heterojunction 10 201230566 introduction region, The thickness on the side of the substrate is equal to the thickness of the outer layer of the heterostructure. In a preferred embodiment, the reflectors of the optical laser of the main laser are not on the optical surface from the surface of the heterostructure to the depth in the lead-in area. The constraining layer on the side of the substrate. In this case, the main laser (without focusing optics and virtually no loss of loss) and the integral connection of each of the two linear amplifiers are mainly via the buried portion of the introduction layer of the heterostructure. Performing, omitting the opaque reflector of the optical resonator of the main firing device (formed on both sides of the optical facets of the main laser = damper) (by coating Deposition) A reflection coefficient close to one of the reflectors is obtained in an optical resonator (opaque optical resonator) comprising two high-intensities on both sides The mirror mask has a reflector having a maximum high reflection coefficient. The opaque characteristics of the opaque optical resonator structure are: the two reflectors of the opaque optical reader structure are actually completely reflected from the active of the laser The emission of the layer is emitted, and the laser emission output is achieved from the introduced layer of the proposed modified heterostructure, omitting the opaque reflector of the optical resonator. In a preferred embodiment, the linear Amplifier can be located On the end side of the optical resonator of the main laser, and a linear amplifier may be present on each end side of the optical resonator. In a preferred embodiment, the main laser provides a lightning under a fundamental mode Shooting light, and provide single-frequency laser light when necessary. In order to achieve stable single frequency 11 201230566 laser light (and single frequency pull, us: ^ _ 屈 'shoot) 'the main laser The reflectors of the optical resonator are made as a decentralized Bragg reflector (Bugg afleeter), in a preferred embodiment +, in the lateral confinement region of the main laser, there are at least one segmentation constraint sub-region and at least one Constraining the sub-region, and the segmentation constraint sub-region having a specified width is on the two lateral sides of the active laser light-emitting region of the main laser from the surface of the heterostructure to a specified depth, the specified depth is not a depth reaching a position of the active layer, the constrained sub-region being on the two lateral sides of the split constrained sub-region from the surface of the heterostructure to a specified depth, the specified depth exceeding the depth of the position of the active layer but Did not reach the constraint The depth of the position of the layer. The unusual placement of the constrained sub-region (across the active layer) provides mode stability of the laser emission at increased laser output power. In a preferred embodiment, the linear amplifier The active region can be made as a full strip region, or can be fully widened, or can be widened and has a smooth transition from one to the strip portion. In the latest version, the active region of the linear amplifier The widened portion is adjacent to the main laser, and the smooth transition is achieved until the smooth transition to the sig strip active region is before the position closest to the rotating element. In a preferred embodiment, there is one One of the specified width division constraints is adjacent to each lateral side of the active area of the 3H linear amplifier, and the partition sub-area is placed from the surface of the heterostructure to a specified depth, the specified depth is not The depth reaching the position of the active layer, if necessary, a constraining sub-region connected to each lateral side of the segmentation-constrained sub-region, the constraining sub-region being placed from the surface of the heterostructure to a specified depth The specified depth exceeds 12 201 230 566 5 t Xuan Hai depth position does not reach the active layer of the depth position of the constraining layer. In a preferred embodiment, the optically reflective coating on the idle optical face of the linear amplifier has a near reflection coefficient. In a preferred embodiment, the active region of the vertical amplifier can be made as a king strip region, or can be fully widened, or can be widened and have a smooth transition from 2 to strip. In the latest version, the widened portion of the active region of the vertical amplifier is adjacent to the linear amplifier and the widening is possible. The smooth transition to the active zone of the strip is achieved at a specified distance from the rotating element. In a preferred embodiment, a segmentation constraint sub-region having a specified width is adjacent to each lateral side of the active region of the vertical amplifier, and the segmentation scoop sub-region is placed from the surface of the heterostructure to a depth The depth does not reach the depth of the location of the active layer. If necessary, a constraining sub-region is coupled to each lateral side of the knife-cutting confinement sub-region, the constraining sub-region being placed from the surface of the heterostructure to a depth that exceeds the position of the active layer The depth but not the depth of the position of the constraining layer. In a preferred embodiment, the optical resonator is exposed from the main laser. The optically reflective plane of a rotating element that is maximally removed by the retroreflector penetrates into the heterostructure, at least to the confinement layer on the side of the substrate. In a preferred embodiment, the optical anti-reflective coating on the optical facets of the amplified output of the vertical amplifier has a near zero reflection coefficient β 13 201230566. In a preferred embodiment, the rotating element The optically reflective plane has a positive 45. The tilt angle, and the optical reflecting plane of the rotating member immediately adjacent to the optical reflecting plane has a tilt angle of minus 45 。. This situation allows the transmit output to be achieved in the opposite direction. In a preferred embodiment, the common heterostructure comprises at least two active layers electrically connected to each other by a p-type and n-type thin heavily doped layer having tunnel transitions therebetween. In a preferred embodiment, the main laser, the linear amplifiers, and the vertical amplifiers have separate ohmic contacts. . In a preferred embodiment, there is at least one additional along the active region of the at least one vertical amplifier, in the direction of the optical axis of the propagation of the double-amplified laser emission, at a specific distance from the rotating element Introduced Output Element The at least one additionally introduced output element comprises at least one optically reflective plane, the at least one optically reflective plane being at 45. The (modulus) tilt angle spans several ® temporary 6 signatures, c τ Wu quality, 纟. The plane of the formation includes the active layer and partially includes the introduction layer (ie, 兮 尽, π ie, the thickness of the introduction layer is from 3〇% to 8〇%), and the decision is made for the purpose of achieving the following 5 is necessary: to achieve the direction of the plane perpendicular to the plane of the active layer, the white laser, the output of the amplified laser emission from the active area of the 5 Hai special vertical amplifier (so-called amplified laser emission) Vertical output) (In the following 'the DSMCLE with vertical emission output is called DSMCLE-VE). The original output elements introduced in the direction of the optical axis include an optical reflection plane, and the 54+τ.w pre-reflection plane spans the active amplifier of the vertical amplifier and is labeled as The inclination angle of the horse 45 (modulus) is transmitted from the outside into the emission introduction layer. All DSMCLE specific examples of 2012 566 上文 上文 上文 上文 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 The essence of the insignificant DSMCLE proposed in the present invention is that the proposed common heterostructure for the single-mode (and single-frequency) main laser, linear and vertical amplifiers is perpendicular to the heterostructure. The active layer has a near-emissive field of incomparably large size in the plane. The essence of the invention is also the original and efficient two-stage process of the overall connection: the connection of the single-frequency, single-mode main laser and the linear amplifier in the first stage, the linear amplifier and the vertical amplifier in the second stage The connection. In this case, the active regions of the vertical amplifiers are placed at right angles relative to the active amplification regions of the linear amplifiers. The flow of one of the laser emissions from the linear amplifiers to the vertical amplifiers is achieved by the introduction of the original rotating elements introduced, and the introduced original rotating elements are placed in the active of the special linear amplifiers. The intersection of the zones with the active zones of the vertical amplifiers. In addition, by introducing an original monolithic output element placed along the optical axis of the vertical amplifiers, an original and efficient output of ultra-high power multi-beam high quality amplified laser emissions is achieved. The plane of the heterostructure layer is guided vertically (in the direction of the outer layer of the heterostructure and in the direction of the semiconductor substrate). The technical implementation of the DSMCLE proposed in the present invention is based on known basic technology processes that have been well developed and widely used to date. This proposal meets the “industrial applicability” guidelines. The main difference in the manufacture of the DSMCLE is the feature of the heterostructure and the overall connection of the main laser to the linear amplifier and the linear amplifiers to the vertical amplifiers. 15 201230566 [Embodiment] Hereinafter, the present invention will be described in detail with reference to Figs. 1 to 8. In the following, the drawings are included to explain the present invention by way of a specific example. A specific example of a diode source with multiple beam-tuned laser emissions (DSMCLE) with horizontal emission output and vertical emission output (a diode source with multiple beam-tuned laser emissions with vertical emission output is called DSMCLE-VE) The given examples are not the only examples, and the availability of other implementations (including known wavelength ranges) is envisaged, and the characteristics of these DSMCLEs are reflected in the summary of the differences based on the scope of the patent application. The proposed DSMCLE 10 (see Figures 1 to 2) contains a single mode main laser 20 that is laser-exposed in a fundamental mode and is integrally connected to two linear amplifiers 30 at both ends. Connected to the main laser 20 on the side. The opaque optical reflector 21 is placed at the end of the laser optical resonator (see also page 11, paragraph 1, line 3 to line 8). A linear amplifier 30 having an anti-reflective coating 33 on the outer optical facet 32 is in turn integrally coupled to a vertical amplifier 40 having a widenable active amplification region 41 by the use of a rotating element 70. The output of the amplified laser emission is made via the anti-reflective optics facet 42 of each of the four vertical amplifiers 40. The DSMCLE 10 is manufactured based on the common laser heterostructure 20 of the main laser 20 and the diode amplifiers 3A and 40. The heterostructure 50 is grown on the n-type GaAs substrate 60. The integral connection of the linear amplifier 30 to the vertical amplifier 4A is achieved by using the rotating element 70. The heterostructure 5 成长 is grown based on the AI GaAs semiconductor compound, and the heterostructure 5 〇 has the active layer 51 of In AIGa As. The laser wavelength determined by the composition of the active layer 51 and the thickness 16 201230566 is selected to be equal to 0 976 μηβ on the side of the substrate 60, and the first lead-in region (including the adjustment layer 53 and the introduction layer 54) is located at the active layer 51 and Between the constraining layers 52. On the opposite side, the first lead-in region 56 (including the adjustment layer and the introduction layer) is located between the active layer 51 and the alignment layer 55, and the p-type semiconductor contact layer 57 is adjacent to the second lead-in region %. Metallization layers and corresponding insulating dielectric layers are not shown in the figures. In fact, the collection of all layers of the heterostructure 5〇 between the constraining layers 52 and 55 forms an extendable waveguide region. These lead-in layers are made of AIGaAs. The thickness of the introduction layer 54 on the side of the substrate 6 is selected to be equal to 6 from the jaws, the thickness being on the order of magnitude greater than the thickness of the introduction layer on the opposite side. At current densities of 〇3 kA/cm2 and 5·0 kA/cm2, the calculated ratio of the effective refractive index of the heterostructure 5 对 to the refractive index niN of the conductive layer 54 (neff/niN) is equal to 0.999868, respectively. And 0.997972. Based on the heterostructure 5〇 described above, one main laser 20, two linear amplifiers 3〇 and four vertical amplifiers are formed integrally. On both sides of the optical face 22 of the optical resonator of the diode laser 20, a reflection coefficient 2 (reflection optical reflector 21) is formed (by deposition of a coating). The main laser 2? is integrally connected to the linear amplifier 30 via the buried introduction layer 54, and the opaque reflector 21 of the constraining layer 52 which does not reach the side of the substrate 6A is omitted. The active laser illuminating zone 23 of the main laser 2 is fabricated as a strip zone having a strip width of 9, and the length of the optical "white oscillating device is selected to be equal to 丨〇〇〇 (7). The width and length of the strip active amplification region 31 in each of the two linear amplifiers (see positions on page 16) are 12 and 2, respectively. An anti-reflective coating 33 having a reflection coefficient close to zero (less than 0.0001) is deposited on each of the external optical facets 3 2 of the linear discharge 30 201230566. The overall optical connection between each linear amplifier 3 〇 and the two vertical amplifiers 40 is achieved by placing two rotating elements 70 in the strip active amplification region 31 (see position on page 16). Each of the rotating elements 70 fabricated by etching includes an optically reflective plane 71 that is positioned at right angles to the plane of the layers of the heterostructure 50 and that penetrates vertically from the contact layer 57 to the lead-in layer 54. Up to 60% of the thickness of the introduction layer 54. In this case, the reflection plane 71 of the rotary element 70 is inverted at an angle (modulus) of 45° with respect to the optical axis of the propagation of the amplified emission in the linear amplifier 30 and the two vertical amplifiers 4A. The active amplification region 41 of each vertical amplifier 4 is made widenable with 6. Widened angle. In the case where the length of the vertical amplifier is 5000 μη, the width of the optical facet 42 of the output amplified emission is 250 μm. An anti-reflective coating 43 having a reflection coefficient close to zero (less than 0·0001) is deposited on the output optical facet 42 of each linear amplifier 4'. The lateral confinement region 80 having the same main characteristics is adjacent to the strip active laser illuminating region 23 of the main laser 20 on both lateral sides, and adjacent to each of the two linear amplifiers 30 active region 3 1 The active region 41 can be widened adjacent to each of the four vertical amplifiers 40. The zone 8〇 contains two subzones (not shown). The first strip division constraint sub-region adjacent to the regions 23, 31 and 41 is recessed by etching to a depth of 2.0 μm to a depth of 0.7 but not reaching the depth of the active layer 5 1 of the heterostructure 50 Formed by grooves. The second constrained sub-region adjacent to the first sub-region is etched into a recessed groove that straddles the plane in which the active layer 51 is located and penetrates into the thickness of the introduction layer 54 from 18 201230566 to the thickness of the introduction layer 54 . % formed. The two grooves are filled with a dielectric. The following specific examples of the DSMCLE 10 (not shown) differ from the specific examples shown in FIG. 2 in that, in this specific example, the opaque reflector 21 of the optical resonator is formed to provide the main A stable single-frequency laser-distributed decentralized Bragg reflector for lasers. The following specific examples of DSMCLE 10 (not shown) differ from the specific examples shown in FIG. 2 in that, in this specific example, the common heterostructure 50 contains at least two active layers, the at least two The active layers are electrically connected to each other by a thin heavily doped layer of p-type and n-type with tunnel transitions therebetween. The following specific examples and diagrams of DSMCLE 10 (not shown)! The specific example shown in Fig. 2 differs in that this specific example contains fifty vertical amplifiers 40 and fifty rotating elements 7〇, each linear amplifier 30 having a length of 20,000 μm. The following specific examples of DSMCLE 10 (see FIG. 3) differ from the specific examples shown in FIGS. i to 2 in that each of the two closest to the main laser is in this specific example (each of the two) The active amplification zone 34 is made widenable in its initial portion, which has a smooth transition to the strip portion 31 having the strip width of the pawl. Each active amplification region 44 of the vertical amplifier 4A is formed as a strip active amplification region 44. Furthermore, in each of the rotating elements 7 that are removed by the optical facet 22 of the large laser 20, the optically reflective plane 72 penetrates 100% of the thickness of the introduction layer 54 to the introduction layer 54. Under this circumstance, the necessity of manufacturing the anti-reflective coating 33 for the linear amplifier 不再 no longer exists. Please note that in Figure 3 and Figure 4 to Figure 6 19 201230566, the lateral constraint zone is not shown. The following specific examples of DSMCLE 10 (not shown) differ from the previous specific examples in that, in this particular example, adjacent to the strip zone 34 to the linear amplifier 30 and to the strip active amplification zone 31 The laterally constrained region 80 of the smoothly transitionable widened active amplification region consists of only one segmentation constraint sub-region. The following specific examples of the DSMCLE 10 (not shown) differ from the previous specific examples in that, in this specific example, the lateral confinement region 80 of the strip active amplification region 44 adjacent to the vertical amplifier 40 is divided by only one division. Constrained sub-area composition. The following specific example of DSMCLE 10 (see FIG. 4) differs from the specific example shown in FIG. 3 in that, in this specific example, in the active amplification region 31 of each linear amplifier 30, the optical reflection plane 72 is relatively The optical reflecting plane 71 of the rotating member 70 is turned at a right angle (9 〇). In this case, the amplified laser emission system outputted in the vertical amplifier 4A connected to the linear amplifier 3A by the optical reflection planes 71 and 72 of the rotary element 70 propagates in the opposite direction. The following specific example of the DSMCLE 10 (see FIG. 5) differs from the specific example shown in FIG. 3 in that, in this specific example, the integral connection of the linear amplifier 30 with the main laser 20 is only in the main laser. On one side. The laser emitting system propagates under the opaque reflector 21 via a portion of the lead-in layer to a smooth transitional widened active amplification region having a strip region to the linear amplifier 3G. On the opposite side of the optical resonator, a light-impermeable reflector is formed on the split optical surface 22. Linear Amplifier 20 201230566 Remaining: The minute has three strip active amplification areas 31 (such as in Figure 3). The linear amplification benefits to the four vertical roses. The overall connection is achieved by a rotating element 7 with corresponding optical reflection planes 71 and 72 (made by rice cooking) to achieve widening active amplification per vertical amplifier 40. a region 41, and the widenable active amplification region closest to the main laser is connected to the strip portion of the active amplification region 34, and the other widenable active amplification region is connected to the three strip active amplification regions 3 relative to the heterostructure The two reflective planes 71 positioned at right angles to the plane of the layers are vertically penetrated from the contact layer 57 to 5〇% of the thickness of the introduction layer 54 to the introduction layer 54, and an active amplification region is used. 34 and two subsequent active amplification regions 31 are connected to the corresponding widened active amplification region 41. The optically reflective plane 72 (compared to plane 71) penetrates vertically into the constraining layer 52, which provides 1% reflection of the amplified beam and removes the active amplification region 31 and most of it. The active amplification area 41 is widened. Under this circumstance, the necessity of manufacturing the anti-reflective coating 3 3 on the end face of the linear amplifier 3 不再 no longer exists. The DSMCLE l〇nxf specific example differs from the previous embodiment in that: in this particular example, 'independent (separated) ohmic contacts are formed to the main laser 2 〇, to the linear amplifier 30 and to the vertical amplifier 40, the ohmic contacts This is accomplished by introducing a thin split strip between the ohmic metallization layers (not shown). The following specific example of the DSMCLE having a vertical emission output, referred to as DSMCLE-VE 100, shown in FIGS. 6, 7, and 8 below is different from the above-described DSMCLE specific example in that, in the vertical amplifier 40, along the The active amplification regions are additionally formed by etching to form two and two integral output elements 110 on 21 201230566. The elements 11 are formed at a specific distance from the rotating element 7 and at a specific distance between the elements 110 and are designed to be output in a vertical direction relative to the plane of the layers of the heterostructure 50. Amplify the laser emission. The following specific examples of DSMCLE-VE 1〇〇 (see FIGS. 6 and 7) differ from the previous specific examples in that, in this specific example, each integral output element 11〇 formed by etching includes a spanning strip The optical reflection plane ln placed with the active amplification area 44 is used to achieve amplified laser emission. The plane 111 spans the layers of the heterostructure 5〇 (including the plane of the active layer 5◦ at a slope of minus 45. The penetration angle into the introduction layer 54 to 65% of the thickness of the introduction layer 54) for most of the spin In the case of the output element ιι〇 removed, the optically reflective plane 112 penetrates 100% of the thickness of the introduction layer 54 to the introduction layer 54. At the output of the amplified laser emission on the outer side 61 of the substrate 60, An anti-reflective coating 113 having a reflection coefficient of less than 0.0001 is formed. The metallization layer and the anti-reflective coating ι 3 on the remaining free surface of the substrate 60 are not shown in Fig. 7. DSMCLE-VE 100 (see Figs. 6 and 8) The following specific examples differ from the previous specific examples in that, in this particular example, the tilt angle of the optically reflective plane lu of the overall output element 110 is positive 45. In this particular example, the output system of the amplified laser emission is amplified. In a direction opposite to the position of the substrate, at a right angle to the plane of the layers of the heterostructure 50. In this case, at the output of the amplified laser emission, the heavily doped contact layer 57 is removed and After the constraining layer 55, the deposition reflection 113. 〇.〇〇〇1 antireflective coating is less than the number of remaining idle on the surface of the metal contact layer 57 of the layer 22 201 230 566 not shown in FIG.
^束同調雷射發射的所提議之二極體源dsmCLE (DSMCLE.VE)使得有可能在裝置中在發射之傳播的水平 平面中且在垂直於異質結構之主動層的平面中產生無比高 功率之同調雷射發射1中輸出發射具有無比低之發散。 工業適用性 多束同調雷射發射之二極體源用於精確雷射材料處理 (雷射切割、焊接、鑽孔、纟面轉、各種零件之尺寸處 理、雷射標記及雕刻）+，用於外科手術及動力治療之雷 射裝置中，用於雷射測距儀、雷射目標指示器中，用於實 現二倍頻雷射且用於實現泵浦纖維及固態雷射及光學放大 器。 【圖式簡單說明】 圖1為具有主雷射、在外部光學小面上具有抗反射塗 層之兩個線性放大器及四個垂直放大器的所提議之 DSMCLE的俯視圖之示意性說明。 圖2為所提議之DSMCLE沿著主雷射及與主雷射整體 連接之線性放大器的光軸的縱剖面的示意性說明。 圖3為與圖1中示意性表示之DSMCLE不同的所提議 之DSMCLE的俯視圖之示意性說明，不同之處在於：由可 加寬部分組成的兩個線性放大器中之每一者的主動放大區 平滑地進入一條帶部分’除此之外，在線性放大器之外部 光學小面上亦無抗反射塗層。 23 201230566 圖4為與圖3中示意性表示之dsmCLE不同的所提議 之DSMCLE的俯視圖之示意性說明，不同之處在於：四個 垂直放大器經由對應旋轉元件而連接至兩個線性放大器之 主動放大區，所提議之DSMCLE的放大雷射發射在相反方 向上交替地傳播。 圖5為與圖3中示意性表示之dsmCLE不同的所提議 之DSMCLE的俯視圖之示意性說明，不同之處在於：在光 學諧振器之不透光反射器之一側上，一線性放大器整體連 接至主二極體雷射。 圖6為與圖3中示意性表示之DSMCLE不同的所提議 之DSMCLE-VE的俯視圖之示意性說明，不同之處在於·在 四個垂直放大器中之每一者中，沿著縱向光軸形成三個輸 出元件以達成放大雷射發射。 圖7為所提議之DSMCLE-VE的四個垂直放大器中之一 者的縱剖面的示意性說明，其中輸出元件經由基板實現輸 出放大雷射發射的射束。 圖8為圖7中示意性表示之垂直放大器的縱剖面之示 意性說明，不同之處在於：輸出元件在異質結構之外表面 之方向上實現放大雷射發射之射束的輸出。 【主要元件符號說明】 1 〇.所提4之多束同調雷射發射的二極體源（DSMCLE ) 20 :主二極體雷射 21.光學諧振器之不透光反射器/不透光光學反射器 24 201230566 22 :光學諧振器之光學小面 23 :條帶主動雷射放光區 30 :線性放大器 3 1 ·•條帶主動放大區 32 :外部光學小面 33 :抗反射塗層 34:具有至條帶區之平滑過渡的可加寬主動放大區 40 :垂直放大器 41 :可加寬主動放大區 42 :輸出光學小面 43 :抗反射塗層 44 :條帶主動放大區 50 :異質結構 51 :主動層 5 2 :基板之側上的約束層 53 :基板之側上的調整層 54 :導入層 5 5 :外部層之側上的約束層 5 6 :外部層之側上的導入區 57 : p型之外部接觸層 60 :異質結構之基板 6 1 :基板之外表面 70 :旋轉元件 7 1 :光學反射平面 25 201230566 72 :穿透至約束層52之光學反射平面 80 :主雷射、線性放大器及垂直放大器之橫向約束區 100 : DSMCLE-VE 具體實例 II 0 :輸出元件 III :光學反射平面 112:穿透至約束層52之光學反射平面 11 3 :用於輸出發射之抗反射塗層 26The proposed diode source dsmCLE (DSMCLE.VE) for beam-tuned laser emissions makes it possible to produce incomparably high power in the horizontal plane of the propagation of the emission in the device and in the plane perpendicular to the active layer of the heterostructure. The output emission of the coherent laser emission 1 has an infinitely low divergence. Industrial Applicability Multi-beam homogenous laser emission diode source for precision laser material processing (laser cutting, welding, drilling, kneading, dimensional processing of various parts, laser marking and engraving) +, In laser devices for surgery and dynamic therapy, it is used in laser range finder and laser target indicator to realize double-frequency laser and is used to realize pump fiber and solid-state laser and optical amplifier. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a top view of a proposed DSMCLE having a main laser, two linear amplifiers with anti-reflective coating on the outer optical facet, and four vertical amplifiers. 2 is a schematic illustration of a longitudinal section of the optical axis of the proposed DSMCLE along the main laser and the linear amplifier integrally coupled to the main laser. 3 is a schematic illustration of a top view of a proposed DSMCLE different from the DSMCLE shown schematically in FIG. 1, except that the active amplification region of each of the two linear amplifiers consisting of a widenable portion Smoothly enters a strip portion' In addition to this, there is no anti-reflective coating on the outer optical facet of the linear amplifier. 23 201230566 FIG. 4 is a schematic illustration of a top view of the proposed DSMCLE different from the dsmCLE schematically represented in FIG. 3, except that four vertical amplifiers are connected to the active amplification of the two linear amplifiers via corresponding rotating elements. The amplified laser emissions of the proposed DSMCLE alternately propagate in opposite directions. Figure 5 is a schematic illustration of a top view of the proposed DSMCLE different from the dsmCLE schematically represented in Figure 3, except that on one side of the opaque reflector of the optical resonator, a linear amplifier is integrally connected To the main diode laser. Figure 6 is a schematic illustration of a top view of the proposed DSMCLE-VE different from the DSMCLE shown schematically in Figure 3, except that in each of the four vertical amplifiers, along the longitudinal optical axis Three output elements are used to achieve amplified laser emissions. Figure 7 is a schematic illustration of a longitudinal section of one of the four vertical amplifiers of the proposed DSMCLE-VE, wherein the output element effects a beam that amplifies the laser emission via the substrate. Figure 8 is a schematic illustration of a longitudinal section of the vertical amplifier shown schematically in Figure 7, except that the output element effects the output of the beam that amplifies the laser emission in the direction of the outer surface of the heterostructure. [Explanation of main component symbols] 1 〇. 4 of the bundled coherent laser emission source (DSMCLE) 20: main diode laser 21. opaque reflector of optical resonator / opaque Optical Reflector 24 201230566 22: Optical Facet 23 of Optical Resonator: Strip Active Laser Light Release Zone 30: Linear Amplifier 3 1 • Strip Active Amplification Zone 32: External Optical Facet 33: Anti-Reflection Coating 34 : Widened Active Amplification Zone 40 with Smooth Transition to Strip Zone: Vertical Amplifier 41: Can Widen Active Amplification Zone 42: Output Optical Facet 43: Anti-Reflection Coating 44: Strip Active Amplification Zone 50: Heterogeneous Structure 51: Active layer 5 2: Constraining layer 53 on the side of the substrate: Adjustment layer 54 on the side of the substrate: Introducing layer 5 5: Constraining layer on the side of the outer layer 5 6 : Lead-in area on the side of the outer layer 57: p-type outer contact layer 60: substrate of heterostructure 6 1 : substrate outer surface 70: rotating element 7 1 : optical reflection plane 25 201230566 72 : optical reflection plane 80 penetrating to constraining layer 52: main laser , Horizontal Amplifier of Linear Amplifier and Vertical Amplifier 100 : DSMCLE-VE Specific Example I I 0 : output element III : optical reflection plane 112 : optical reflection plane penetrating to the constraining layer 52 11 3 : anti-reflection coating for output emission 26