TW224537B - Fused quartz diffusion tubes for semiconductor manufacture - Google Patents

Fused quartz diffusion tubes for semiconductor manufacture

Info

Publication number
TW224537B
TW224537B TW082109848A TW82109848A TW224537B TW 224537 B TW224537 B TW 224537B TW 082109848 A TW082109848 A TW 082109848A TW 82109848 A TW82109848 A TW 82109848A TW 224537 B TW224537 B TW 224537B
Authority
TW
Taiwan
Prior art keywords
fused quartz
metal
interior
exterior surface
diffusion tubes
Prior art date
Application number
TW082109848A
Other languages
Chinese (zh)
Inventor
Ernest Dogunke Gordon
Eoward Scott Curtis
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of TW224537B publication Critical patent/TW224537B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

Fused quartz diffusion tubes used in the manufactrure of silicon useful for semiconductors has improved resistance to sodium diffusion by means of a metal silicate coating of a metal selected from the group consisting essentially of scandium, yttriuum, beryllium, rare earth metal and mixture thereof on its surface. Although the metal silicate coating can be present on the interior or exterior surface of the tube or on both the interior and exterior surface of the tube or on both the interior and extterior surfaces, in most applications it will be present only on the exterior surface to prevent potential contamination of the silicon with a metal of the coating.
TW082109848A 1992-12-21 1993-11-23 Fused quartz diffusion tubes for semiconductor manufacture TW224537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99401792A 1992-12-21 1992-12-21

Publications (1)

Publication Number Publication Date
TW224537B true TW224537B (en) 1994-06-01

Family

ID=25540206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082109848A TW224537B (en) 1992-12-21 1993-11-23 Fused quartz diffusion tubes for semiconductor manufacture

Country Status (6)

Country Link
EP (1) EP0604096B1 (en)
JP (1) JPH06260439A (en)
KR (1) KR940016469A (en)
CA (1) CA2110009A1 (en)
DE (1) DE69302166T2 (en)
TW (1) TW224537B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153586B2 (en) 2003-08-01 2006-12-26 Vapor Technologies, Inc. Article with scandium compound decorative coating
US7329467B2 (en) 2003-08-22 2008-02-12 Saint-Gobain Ceramics & Plastics, Inc. Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same
WO2006023894A2 (en) 2004-08-24 2006-03-02 Saint-Gobain Ceramics & Plastics, Inc. Semiconductor processing components and semiconductor processing utilizing same
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1293554A (en) * 1961-03-29 1962-05-18 Thomson Houston Comp Francaise Manufacturing process of raw or finished semiconductor products
FR1431666A (en) * 1963-03-29 1966-03-18 Siemens Ag Process for the heat treatment of monocrystalline semiconductor bodies
US4102666A (en) * 1968-02-22 1978-07-25 Heraeus-Schott Quarzschmelze Gmbh Method of surface crystallizing quartz
DE3544812A1 (en) * 1985-12-18 1987-06-25 Heraeus Schott Quarzschmelze DOUBLE WALL QUARTZ GLASS TUBE FOR IMPLEMENTING SEMICONDUCTOR TECHNICAL PROCESSES

Also Published As

Publication number Publication date
CA2110009A1 (en) 1994-06-22
EP0604096A1 (en) 1994-06-29
JPH06260439A (en) 1994-09-16
DE69302166D1 (en) 1996-05-15
DE69302166T2 (en) 1996-11-21
KR940016469A (en) 1994-07-23
EP0604096B1 (en) 1996-04-10

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