TW363224B - Semiconductor element connecting device and method for fabricating the same - Google Patents

Semiconductor element connecting device and method for fabricating the same

Info

Publication number
TW363224B
TW363224B TW085103723A TW85103723A TW363224B TW 363224 B TW363224 B TW 363224B TW 085103723 A TW085103723 A TW 085103723A TW 85103723 A TW85103723 A TW 85103723A TW 363224 B TW363224 B TW 363224B
Authority
TW
Taiwan
Prior art keywords
conduction type
forming
diffused regions
impurity diffused
type well
Prior art date
Application number
TW085103723A
Other languages
Chinese (zh)
Inventor
Jae-Kap Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW363224B publication Critical patent/TW363224B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A method for fabricating a semiconductor element connecting device adapted to impurity diffused regions formed on a semiconductor substrate, the impurity diffused regions each having different conductivities. The method includes forming a first-conduction type well and a second-conduction type well on the semiconductor substrate, forming first-conduction type impurity diffused regions, which do not come into contact with each other, in the second-conduction type well, forming second-conduction type impurity diffused regions, which do not come into contact with each other, in the first-conduction type well, forming an insulating film over the resulting structure, selectively removing the insulating film, thereby forming contact holes for exposing the first- and second-conduction type impurity diffused regions, forming a semiconductor layer over the resulting structure, forming a silicide film over the semiconductor layer, and annealing the resulting structure, thereby diffusing the impurity ions of the first- and second-conduction type impurity diffused regions in the semiconductor layer.
TW085103723A 1995-03-29 1996-03-28 Semiconductor element connecting device and method for fabricating the same TW363224B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006819A KR0140720B1 (en) 1995-03-29 1995-03-29 Semiconductor contact and manufacturing method thereof

Publications (1)

Publication Number Publication Date
TW363224B true TW363224B (en) 1999-07-01

Family

ID=19410774

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085103723A TW363224B (en) 1995-03-29 1996-03-28 Semiconductor element connecting device and method for fabricating the same

Country Status (3)

Country Link
KR (1) KR0140720B1 (en)
CN (1) CN1056473C (en)
TW (1) TW363224B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1049765C (en) * 1997-04-08 2000-02-23 世界先进积体电路股份有限公司 Contacts for interconnecting on integrated circuits and methods of manufacturing the same
CN1056469C (en) * 1997-04-15 2000-09-13 世界先进积体电路股份有限公司 Method for forming high-density integrated circuit interconnection
KR100445638B1 (en) * 2002-07-26 2004-08-25 삼성전자주식회사 Interconnection structure connecting electrically isolated regions and method of fabricatinging the same
KR100935298B1 (en) * 2003-02-17 2010-01-06 매그나칩 반도체 유한회사 Wiring Formation Method of Semiconductor Device
EP3832279B1 (en) * 2019-12-06 2023-11-29 Melexis Technologies NV Semiconductor stress sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186655A (en) * 1988-01-14 1989-07-26 Fujitsu Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
CN1139820A (en) 1997-01-08
KR960036045A (en) 1996-10-28
CN1056473C (en) 2000-09-13
KR0140720B1 (en) 1998-06-01

Similar Documents

Publication Publication Date Title
TW338847B (en) Semiconductor device with isolation insulating film tapered and method of manufacturing the same
EP0123309A3 (en) Method of producing stable, low ohmic contacts in integrated semiconductor circuits
EP1073121A3 (en) Semiconductor memory device and method for manufacturing the same
KR940001329A (en) Manufacturing Method of Semiconductor Device
CA2276008A1 (en) Semiconductor device with selectively diffused regions
MY115056A (en) Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
KR970023863A (en) Semiconductor device and manufacturing method
TW344143B (en) Method for manufacturing a semiconductor device
EP0390509A3 (en) Semi-conductor device and method of manufacturing the same
TW363224B (en) Semiconductor element connecting device and method for fabricating the same
TW253992B (en) Dielectric as load resistor in 4T SRAM
TW344117B (en) Integrated circuit with interlevel dielectric
TW334641B (en) Method of manufacturing semiconductor device
JPH1070198A5 (en)
TW428289B (en) Semiconductor device having an improved lead connection structure and manufacturing method thereof
KR930009116A (en) Thin film transistor and its manufacturing method
EP0228183A3 (en) Method for manufacturing semiconductor device
KR910001889A (en) Semiconductor device
TW344108B (en) A bipolar transistor and method of manufacturing thereof
EP0889527A3 (en) Semiconductor device with reduced number of trough holes and method of manufacturing the same
CA2014048A1 (en) Semiconductor device isolation
KR950034419A (en) Semiconductor device and manufacturing method
JPS5271994A (en) Semiconductor integrated circuit device
TW429512B (en) Semiconductor device and method for manufacturing the same
EP0052475A3 (en) Semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees