TWI312105B - - Google Patents

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Publication number
TWI312105B
TWI312105B TW091112934A TW91112934A TWI312105B TW I312105 B TWI312105 B TW I312105B TW 091112934 A TW091112934 A TW 091112934A TW 91112934 A TW91112934 A TW 91112934A TW I312105 B TWI312105 B TW I312105B
Authority
TW
Taiwan
Prior art keywords
liquid
water
concentration
photoresist
stripping
Prior art date
Application number
TW091112934A
Other languages
English (en)
Chinese (zh)
Inventor
Toshimoto Nakagawa
Yuko Katagiri
Shu Ogawa
Satoru Morita
Makoto Kikukawa
Original Assignee
Hirama Lab Co Ltd
Nagase & Co Ltd
Nagase Cms Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hirama Lab Co Ltd, Nagase & Co Ltd, Nagase Cms Technology Co Ltd filed Critical Hirama Lab Co Ltd
Application granted granted Critical
Publication of TWI312105B publication Critical patent/TWI312105B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/12—Condition responsive control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW091112934A 2001-06-25 2002-06-13 TWI312105B (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001191703A JP3914722B2 (ja) 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法

Publications (1)

Publication Number Publication Date
TWI312105B true TWI312105B (2) 2009-07-11

Family

ID=19030286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091112934A TWI312105B (2) 2001-06-25 2002-06-13

Country Status (5)

Country Link
US (1) US7109037B2 (2)
JP (1) JP3914722B2 (2)
KR (1) KR20030023456A (2)
CN (1) CN1295568C (2)
TW (1) TWI312105B (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495967B (zh) * 2011-05-20 2015-08-11 松下電器產業股份有限公司 Photoresist stripping solution, stripping liquid recovery system and operation method and stripping liquid recovery method
TWI691811B (zh) * 2016-03-14 2020-04-21 日商平間理化硏究所股份有限公司 水系阻劑剝離液的調製裝置及非水系阻劑剝離液的調製裝置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652044B1 (ko) * 2001-12-18 2006-11-30 엘지.필립스 엘시디 주식회사 스트립 장치
US7867696B2 (en) * 2004-04-15 2011-01-11 The Boeing Company Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes
US20070289905A1 (en) * 2006-06-20 2007-12-20 Biofuels Automation, Inc. System for managing solution for cleaning fermentation tanks
US8545636B2 (en) * 2006-07-27 2013-10-01 Atmel Corporation Conductivity control of water content in solvent strip baths
US7935642B2 (en) * 2007-11-16 2011-05-03 General Electric Company Replenishment method for an advanced coating removal stripping solution
JP5712051B2 (ja) * 2011-05-20 2015-05-07 パナソニック株式会社 剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法
JP2013183080A (ja) * 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
US8877084B2 (en) 2012-06-22 2014-11-04 General Electric Company Method for refreshing an acid bath solution
JP6041260B2 (ja) * 2012-10-11 2016-12-07 パナソニックＩｐマネジメント株式会社 レジスト剥離液の調合槽からのサンプリング方法およびサンプリング装置
JP6249217B2 (ja) * 2013-12-27 2017-12-20 パナソニックＩｐマネジメント株式会社 レジスト剥離液の組成比維持装置およびレジスト剥離液の組成比維持方法
KR20240132482A (ko) 2017-04-21 2024-09-03 신라젠(주) 항암 백시니아 바이러스와 관문 저해제 병용 요법
JP7770107B2 (ja) * 2021-05-10 2025-11-14 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602179B2 (ja) 1993-12-29 1997-04-23 株式会社平間理化研究所 レジスト剥離液管理装置
TW256929B (2) * 1993-12-29 1995-09-11 Hirama Rika Kenkyusho Kk
JP3093975B2 (ja) * 1996-07-02 2000-10-03 株式会社平間理化研究所 レジスト剥離液管理装置
JPH1083946A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd レジスト剥離液管理方法及びレジスト剥離装置
JP3126690B2 (ja) * 1997-10-27 2001-01-22 株式会社平間理化研究所 レジスト剥離液管理装置
KR100306649B1 (ko) * 1997-12-03 2001-11-14 주식회사 동진쎄미켐 레지스트박리액,이를이용한레지스트박리방법,레지스트박리액재생장치,및레지스트박리액관리장치
JP3630543B2 (ja) * 1998-02-05 2005-03-16 大日本スクリーン製造株式会社 基板処理装置
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
JP2001223153A (ja) * 2000-02-10 2001-08-17 Mitsubishi Electric Corp レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495967B (zh) * 2011-05-20 2015-08-11 松下電器產業股份有限公司 Photoresist stripping solution, stripping liquid recovery system and operation method and stripping liquid recovery method
TWI691811B (zh) * 2016-03-14 2020-04-21 日商平間理化硏究所股份有限公司 水系阻劑剝離液的調製裝置及非水系阻劑剝離液的調製裝置

Also Published As

Publication number Publication date
CN1295568C (zh) 2007-01-17
CN1407411A (zh) 2003-04-02
KR20030023456A (ko) 2003-03-19
US20020197869A1 (en) 2002-12-26
JP2003005387A (ja) 2003-01-08
US7109037B2 (en) 2006-09-19
JP3914722B2 (ja) 2007-05-16

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