TWI521726B - 功率半導體元件及其製造方法（二） - Google Patents

功率半導體元件及其製造方法（二） Download PDF

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TWI521726B
TWI521726B TW101129941A TW101129941A TWI521726B TW I521726 B TWI521726 B TW I521726B TW 101129941 A TW101129941 A TW 101129941A TW 101129941 A TW101129941 A TW 101129941A TW I521726 B TWI521726 B TW I521726B
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channel
oxide
forming
trench
active channel
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TW101129941A
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TW201308647A (zh
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亞修克 恰拉
艾倫 伊班哈威
克里斯多夫Ｂ 柯科
史蒂芬Ｐ 莎普
巴巴克Ｓ 桑尼
彼得Ｈ 威爾森
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快捷半導體公司
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
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    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
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    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
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    • H10D30/66—Vertical DMOS [VDMOS] FETs
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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW101129941A 2003-12-30 2004-12-29 功率半導體元件及其製造方法（二） TWI521726B (zh)

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US53379003P 2003-12-30 2003-12-30
US58884504P 2004-07-15 2004-07-15

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TW201308647A TW201308647A (zh) 2013-02-16
TWI521726B true TWI521726B (zh) 2016-02-11

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TW101129941A TWI521726B (zh) 2003-12-30 2004-12-29 功率半導體元件及其製造方法（二）
TW093141126A TWI404220B (zh) 2003-12-30 2004-12-29 功率半導體元件及其製造方法
TW097122158A TWI399855B (zh) 2003-12-30 2004-12-29 功率半導體元件及其製造方法（一）

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TW097122158A TWI399855B (zh) 2003-12-30 2004-12-29 功率半導體元件及其製造方法（一）

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JP (3) JP4903055B2 (fr)
KR (2) KR20070032627A (fr)
CN (3) CN103199017B (fr)
DE (3) DE112004002608B4 (fr)
TW (3) TWI521726B (fr)
WO (1) WO2005065385A2 (fr)

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TWI690053B (zh) * 2016-11-04 2020-04-01 大陸商廈門市三安光電科技有限公司 微元件的轉移方法、微元件裝置的製造方法、微元件裝置及電子設備

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US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
CN103199017B (zh) * 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
JP5135663B2 (ja) * 2004-10-21 2013-02-06 富士電機株式会社 半導体装置およびその製造方法
US7453119B2 (en) 2005-02-11 2008-11-18 Alphs & Omega Semiconductor, Ltd. Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
JP4955222B2 (ja) * 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101296984B1 (ko) * 2005-06-10 2013-08-14 페어차일드 세미컨덕터 코포레이션 전하 균형 전계 효과 트랜지스터
JP4921730B2 (ja) * 2005-06-20 2012-04-25 株式会社東芝 半導体装置
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
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