TWI658509B - 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 - Google Patents
用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 Download PDFInfo
- Publication number
- TWI658509B TWI658509B TW104119063A TW104119063A TWI658509B TW I658509 B TWI658509 B TW I658509B TW 104119063 A TW104119063 A TW 104119063A TW 104119063 A TW104119063 A TW 104119063A TW I658509 B TWI658509 B TW I658509B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- fluid
- silicon
- hydrogen
- polymer deposition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
- H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
- H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462013959P | 2014-06-18 | 2014-06-18 | |
| US62/013,959 | 2014-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201606867A TW201606867A (zh) | 2016-02-16 |
| TWI658509B true TWI658509B (zh) | 2019-05-01 |
Family
ID=54935182
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104119063A TWI658509B (zh) | 2014-06-18 | 2015-06-12 | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
| TW109114840A TWI733431B (zh) | 2014-06-18 | 2015-06-12 | 用於tsv/mems/功率元件蝕刻的化學物質 |
| TW108109359A TWI695423B (zh) | 2014-06-18 | 2015-06-12 | 用於tsv/mems/功率元件蝕刻的化學物質 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109114840A TWI733431B (zh) | 2014-06-18 | 2015-06-12 | 用於tsv/mems/功率元件蝕刻的化學物質 |
| TW108109359A TWI695423B (zh) | 2014-06-18 | 2015-06-12 | 用於tsv/mems/功率元件蝕刻的化學物質 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US9892932B2 (2) |
| EP (1) | EP3158579A4 (2) |
| JP (1) | JP6485972B2 (2) |
| KR (3) | KR102539241B1 (2) |
| CN (2) | CN106663624B (2) |
| SG (1) | SG11201610342YA (2) |
| TW (3) | TWI658509B (2) |
| WO (1) | WO2015194178A1 (2) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
| KR102652512B1 (ko) | 2015-11-10 | 2024-03-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정 |
| JP6587580B2 (ja) * | 2016-06-10 | 2019-10-09 | 東京エレクトロン株式会社 | エッチング処理方法 |
| EP3608945A4 (en) * | 2017-04-06 | 2020-12-23 | Kanto Denka Kogyo Co., Ltd. | COMPOSITION OF DRY ENGRAVING GAS AND DRY ENGRAVING PROCESS |
| WO2018226501A1 (en) * | 2017-06-08 | 2018-12-13 | Tokyo Electron Limited | Method of plasma etching of silicon-containing organic film using sulfur-based chemistry |
| TWI757545B (zh) * | 2017-09-15 | 2022-03-11 | 日商關東電化工業股份有限公司 | 使用酸鹵化物之原子層蝕刻 |
| US10607999B2 (en) * | 2017-11-03 | 2020-03-31 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming dynamic random access device |
| KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
| JP7145031B2 (ja) | 2017-12-25 | 2022-09-30 | 東京エレクトロン株式会社 | 基板を処理する方法、プラズマ処理装置、及び基板処理装置 |
| KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
| CN110010464B (zh) * | 2017-12-25 | 2023-07-14 | 东京毅力科创株式会社 | 处理基板的方法 |
| CN118588548A (zh) * | 2018-03-16 | 2024-09-03 | 朗姆研究公司 | 在电介质中的高深宽比特征的等离子体蚀刻化学过程 |
| JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
| JP6959999B2 (ja) * | 2019-04-19 | 2021-11-05 | 株式会社日立ハイテク | プラズマ処理方法 |
| CN112786441B (zh) | 2019-11-08 | 2026-01-23 | 东京毅力科创株式会社 | 蚀刻方法及等离子体处理装置 |
| US11456180B2 (en) | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
| KR102723916B1 (ko) * | 2019-11-08 | 2024-10-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| WO2021090516A1 (ja) | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102389081B1 (ko) * | 2020-04-06 | 2022-04-20 | 아주대학교산학협력단 | PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법 |
| KR102388963B1 (ko) * | 2020-05-07 | 2022-04-20 | 아주대학교산학협력단 | 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법 |
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| KR20230079304A (ko) * | 2020-10-05 | 2023-06-07 | 에스피피 테크놀로지스 컴퍼니 리미티드 | 플라스마 처리용 가스, 플라스마 처리 방법 및 플라스마 처리 장치 |
| KR102924126B1 (ko) * | 2020-10-15 | 2026-02-06 | 가부시끼가이샤 레조낙 | 플루오로-2-부텐의 보관 방법 |
| KR102924118B1 (ko) * | 2020-10-15 | 2026-02-09 | 가부시끼가이샤 레조낙 | 플루오로부텐의 보관 방법 |
| CN116325088A (zh) * | 2020-10-15 | 2023-06-23 | 株式会社力森诺科 | 蚀刻气体及其制造方法、以及蚀刻方法、半导体元件的制造方法 |
| JPWO2022080275A1 (2) * | 2020-10-15 | 2022-04-21 | ||
| CN116472258A (zh) * | 2020-10-15 | 2023-07-21 | 株式会社力森诺科 | 氟-2-丁烯的保存方法 |
| WO2022210043A1 (ja) * | 2021-03-30 | 2022-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7700221B2 (ja) * | 2021-05-07 | 2025-06-30 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| WO2022234643A1 (ja) | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| TWI906294B (zh) * | 2021-05-07 | 2025-12-01 | 日商東京威力科創股份有限公司 | 蝕刻方法及蝕刻裝置 |
| WO2025182815A1 (ja) * | 2024-02-27 | 2025-09-04 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
| TW202548079A (zh) | 2024-03-01 | 2025-12-16 | 日商大金工業股份有限公司 | 沉積氣體 |
| WO2025258395A1 (ja) * | 2024-06-11 | 2025-12-18 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
| CN121398476B (zh) * | 2025-12-24 | 2026-04-03 | 西湖大学 | 一种原位自清洁的氧化钨刻蚀方法、半导体结构及芯片 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130105947A1 (en) * | 2011-10-26 | 2013-05-02 | Zeon Corporation | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154337A (ja) * | 1989-11-13 | 1991-07-02 | Hitachi Ltd | 半導体装置の製造方法 |
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| DE19736370C2 (de) | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silizium |
| US6074959A (en) * | 1997-09-19 | 2000-06-13 | Applied Materials, Inc. | Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide |
| DE19826382C2 (de) | 1998-06-12 | 2002-02-07 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| US6284666B1 (en) | 2000-05-31 | 2001-09-04 | International Business Machines Corporation | Method of reducing RIE lag for deep trench silicon etching |
| US6569774B1 (en) | 2000-08-31 | 2003-05-27 | Micron Technology, Inc. | Method to eliminate striations and surface roughness caused by dry etch |
| JP2002110647A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6746961B2 (en) * | 2001-06-19 | 2004-06-08 | Lam Research Corporation | Plasma etching of dielectric layer with etch profile control |
| US6900136B2 (en) | 2002-03-08 | 2005-05-31 | Industrial Technology Research Institute | Method for reducing reactive ion etching (RIE) lag in semiconductor fabrication processes |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| US7453150B1 (en) * | 2004-04-01 | 2008-11-18 | Rensselaer Polytechnic Institute | Three-dimensional face-to-face integration assembly |
| KR20070009729A (ko) | 2004-05-11 | 2007-01-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 불화탄소 에칭 화학반응에서 Ｈ2 첨가를 이용한탄소-도핑-Ｓｉ 산화물 에칭 |
| US7755197B2 (en) * | 2006-02-10 | 2010-07-13 | Macronix International Co., Ltd. | UV blocking and crack protecting passivation layer |
| JP2008270348A (ja) * | 2007-04-17 | 2008-11-06 | Seiko Epson Corp | ドライエッチング装置及び被加工物の加工方法 |
| CN100468664C (zh) * | 2007-05-18 | 2009-03-11 | 西安交通大学 | 氧化锌紫外焦平面成像阵列制作工艺中的化学刻蚀方法 |
| US20090068767A1 (en) | 2007-09-12 | 2009-03-12 | Lam Research Corporation | Tuning via facet with minimal rie lag |
| JP5192214B2 (ja) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP4978512B2 (ja) * | 2008-02-29 | 2012-07-18 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| CN102341444A (zh) * | 2009-03-06 | 2012-02-01 | 苏威氟有限公司 | 不饱和氢氟烃的用途 |
| WO2011093263A1 (ja) * | 2010-02-01 | 2011-08-04 | セントラル硝子株式会社 | ドライエッチング剤及びそれを用いたドライエッチング方法 |
| US8574447B2 (en) * | 2010-03-31 | 2013-11-05 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| JP2013030531A (ja) * | 2011-07-27 | 2013-02-07 | Central Glass Co Ltd | ドライエッチング剤 |
| US8808563B2 (en) * | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
| CN104885203B (zh) | 2012-10-30 | 2017-08-01 | 乔治洛德方法研究和开发液化空气有限公司 | 用于高纵横比氧化物蚀刻的氟碳分子 |
| CN103824767B (zh) | 2012-11-16 | 2017-05-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔的刻蚀方法 |
| JP6017936B2 (ja) * | 2012-11-27 | 2016-11-02 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| CN105917025A (zh) | 2013-03-28 | 2016-08-31 | 得凯莫斯公司弗罗里达有限公司 | 氢氟烯烃蚀刻气体混合物 |
| TWI612182B (zh) | 2013-09-09 | 2018-01-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| WO2015053339A1 (ja) | 2013-10-09 | 2015-04-16 | 旭硝子株式会社 | ２，３，３，３－テトラフルオロプロペンの精製方法 |
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
-
2015
- 2015-06-12 TW TW104119063A patent/TWI658509B/zh active
- 2015-06-12 TW TW109114840A patent/TWI733431B/zh active
- 2015-06-12 TW TW108109359A patent/TWI695423B/zh active
- 2015-06-17 KR KR1020227030041A patent/KR102539241B1/ko active Active
- 2015-06-17 KR KR1020177000840A patent/KR102444697B1/ko active Active
- 2015-06-17 JP JP2016571169A patent/JP6485972B2/ja active Active
- 2015-06-17 EP EP15808907.8A patent/EP3158579A4/en not_active Withdrawn
- 2015-06-17 CN CN201580031726.4A patent/CN106663624B/zh active Active
- 2015-06-17 KR KR1020237017666A patent/KR102679289B1/ko active Active
- 2015-06-17 CN CN202010698443.8A patent/CN111816559B/zh active Active
- 2015-06-17 WO PCT/JP2015/003044 patent/WO2015194178A1/en not_active Ceased
- 2015-06-17 US US15/316,932 patent/US9892932B2/en active Active
- 2015-06-17 SG SG11201610342YA patent/SG11201610342YA/en unknown
-
2017
- 2017-09-08 US US15/699,668 patent/US10103031B2/en active Active
-
2018
- 2018-08-28 US US16/114,371 patent/US10720335B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130105947A1 (en) * | 2011-10-26 | 2013-05-02 | Zeon Corporation | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201610342YA (en) | 2017-01-27 |
| CN106663624A (zh) | 2017-05-10 |
| EP3158579A1 (en) | 2017-04-26 |
| KR102539241B1 (ko) | 2023-06-01 |
| KR102679289B1 (ko) | 2024-06-27 |
| TWI695423B (zh) | 2020-06-01 |
| JP6485972B2 (ja) | 2019-03-20 |
| KR102444697B1 (ko) | 2022-09-16 |
| US10720335B2 (en) | 2020-07-21 |
| TW201606867A (zh) | 2016-02-16 |
| KR20170020434A (ko) | 2017-02-22 |
| US20180366336A1 (en) | 2018-12-20 |
| CN111816559B (zh) | 2024-06-11 |
| KR20220124825A (ko) | 2022-09-14 |
| US20180076046A1 (en) | 2018-03-15 |
| TW202030312A (zh) | 2020-08-16 |
| CN106663624B (zh) | 2020-08-14 |
| CN111816559A (zh) | 2020-10-23 |
| EP3158579A4 (en) | 2018-02-21 |
| US20170103901A1 (en) | 2017-04-13 |
| TW201929071A (zh) | 2019-07-16 |
| US9892932B2 (en) | 2018-02-13 |
| JP2017518645A (ja) | 2017-07-06 |
| WO2015194178A1 (en) | 2015-12-23 |
| KR20230079491A (ko) | 2023-06-07 |
| TWI733431B (zh) | 2021-07-11 |
| US10103031B2 (en) | 2018-10-16 |
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