WO1985000253A1 - Parallel mosfet power switch circuit - Google Patents

Parallel mosfet power switch circuit Download PDF

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Publication number
WO1985000253A1
WO1985000253A1 PCT/US1984/000672 US8400672W WO8500253A1 WO 1985000253 A1 WO1985000253 A1 WO 1985000253A1 US 8400672 W US8400672 W US 8400672W WO 8500253 A1 WO8500253 A1 WO 8500253A1
Authority
WO
WIPO (PCT)
Prior art keywords
mosfets
source
load
power
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1984/000672
Other languages
French (fr)
Inventor
Timothy F. Glennon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sundstrand Corp
Original Assignee
Sundstrand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sundstrand Corp filed Critical Sundstrand Corp
Publication of WO1985000253A1 publication Critical patent/WO1985000253A1/en
Anticipated expiration legal-status Critical
Priority to SG942/86A priority Critical patent/SG94286G/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches

Definitions

  • This invention relates to a high power elec ⁇ trical switching circuit using parallel connected metal 5 oxide semiconductor field effect transistors. .
  • Metal oxide semiconductor field effect tran ⁇ sistors are capable of the high switching speeds needed for powering such
  • the forward resistance of the drain-source circuit of power MOSFETs is typically uniform from MOSFET to MOSFET. Accordingly, the MOSFETs may be con ⁇ nected in parallel in a switching circuit and the
  • a power MOSFET has an inherent reverse diode junction between the source and drain elements.
  • the MOSFET switch is used with a regenerative load, the reverse current which occurs as the switch is opened or turned off flows through the reverse diode junction.
  • the resistance of the reverse junctions of MOSFETs may differ substantially.
  • the reverse current from a regenerative load divides in inverse relation to the reverse junction resistance.
  • the current may exceed the reverse junction current rating, causing MOSFET failure.
  • the switching circuit disclosed may be used in controlling the current from a DC supply to a re ⁇ generative load, as, for example, a DC motor.
  • the switching, circuit may be turned on and off, or the switch closed and opened, by pulses from a control signal source.
  • the pulses are modulated to control the power to the load and the load operation.
  • the motor speed is controlled.
  • a plurality of MOSFETs 10, 11 have their source-drain circuits connected in parallel from one terminal +v of a DC supply to the regenerative load 12.
  • the load circuit is completed to the other terminal -V of the DC supply.
  • Each of the MOSFETs 10, 11 has an inherent or parasitic reverse diode 10a, 11a connected as in ⁇ dicated by dashed lines in parallel with the source- drain circuit.
  • a control signal source 14 has an output which is a series of pulses indicated by waveform 15.
  • the switching control signal from source 15 is con ⁇ nected through isolating resistors 16 with the gate elements of the MOSFETs 10, 11.
  • the switching con ⁇ trol pulses may be modulated, as by width modulation, to control the power delivered to load 12.
  • the forward resistance of the source-drain circuits of the MOSFETs is substantially the same. Accordingly, the forward current from the DC supply to load 12 divides substantially equally among the MOSFETs. However, the resistance of the reverse diode junctions may differ substantially from MOSFET to
  • a first diode 18 is connected in parallel with the MOSFETs between the rengeerative load 12 and the terminal +V of the DC supply. Diode 18 is selected with a current rating sufficient to carry the entire reverse current from load 12.
  • a second diode 20 is connected in series between the DC supply terminal +V and the drain elements of the
  • Additional MOSFET switches may be connected in parallel with MOSFETs 10, 11 as indicated by the dashed lines at the right of the figure.
  • a suitable power MOSFET is a type IRF 450 of International Rectifier, rated to operate at 450 volts and to carry a forward current of 13 amperes.
  • the re- verse diode also has a current rating of 13 amperes.
  • a power MOSFET has a very high speed switcn- ing action.
  • the turn on delay time is of the order of 35 x 10 -9 seconds with a current rise time of 50 x 10 -9 seconds.
  • the turn off delay time is 150 x 10 -9 seconds with a current decay time of 70 x 10 -9 seconds.
  • 15 may be of the order of 10 KHz with pulse width modulation to control the power to the load.

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of Direct Current Motors (AREA)
  • Inverter Devices (AREA)
  • Protection Of Static Devices (AREA)

Abstract

A power switching circuit for controlling the power from a DC supply to a regenerative load (12). The switching circuit includes a plurality of parallel connected MOSFETs (10, 11). A first diode (18) is connected in parallel with the MOSFET switches and poled to conduct reverse current from the load. A second diode (20) is connected in series with the MOSFETs to block the flow of reverse current through the MOSFETs.

Description

Parallel MOSFET Power Switch Circuit
Technical Field
<*.
This invention relates to a high power elec¬ trical switching circuit using parallel connected metal 5 oxide semiconductor field effect transistors. .
Background of the Invention
Metal oxide semiconductor field effect tran¬ sistors (typically referred to as MOSFETs) are capable of the high switching speeds needed for powering such
Ϊ0 loads as an electric motor from a DC supply. However, the current rating of available MOSFETs is is not ade¬ quate to carry the current required for many sizes of motors. Accordingly, it is often desirable to operate two or more power MOSFETs in parallel in a switching
15 circuit.
The forward resistance of the drain-source circuit of power MOSFETs is typically uniform from MOSFET to MOSFET. Accordingly, the MOSFETs may be con¬ nected in parallel in a switching circuit and the
20 switched currents will divide substantially equally among the MOSFETs so that the current rating is not exceeded.
A power MOSFET has an inherent reverse diode junction between the source and drain elements. When
25 the MOSFET switch is used with a regenerative load, the reverse current which occurs as the switch is opened or turned off flows through the reverse diode junction. The resistance of the reverse junctions of MOSFETs may differ substantially. With a plurality of
30 MOSFETs connected in parallel, the reverse current from a regenerative load divides in inverse relation to the reverse junction resistance. The current may exceed the reverse junction current rating, causing MOSFET failure.
Summary of the Invention It is an object of this invention to provide a parallel MOSFET power switching circuit in which the reverse current from a regenerative load is diverted from the reverse diode junctions to avoid the problem outlined above. More particularly, it is a feature of the power switching circuit that a diode is connected in parallel with the source-drain circuits of the MOSFETs and poled to conduct the reverse current from the load. A second diode is connected in series with the source- drain circuits of each of the MOSFET switches and poled to block current flow through the reverse diode junc¬ tions of the MOSFETs.
Further features and advantages will be ap¬ parent from the following description and from the drawing which is a schematic diagram of a power switch circuit incorporating the invention.
The switching circuit disclosed may be used in controlling the current from a DC supply to a re¬ generative load, as, for example, a DC motor. The switching, circuit may be turned on and off, or the switch closed and opened, by pulses from a control signal source. The pulses are modulated to control the power to the load and the load operation. For example, with a DC motor, the motor speed is controlled. With particular reference to the drawing^ a plurality of MOSFETs 10, 11 have their source-drain circuits connected in parallel from one terminal +v of a DC supply to the regenerative load 12. The load circuit is completed to the other terminal -V of the DC supply.
Each of the MOSFETs 10, 11 has an inherent or parasitic reverse diode 10a, 11a connected as in¬ dicated by dashed lines in parallel with the source- drain circuit.
A control signal source 14 has an output which is a series of pulses indicated by waveform 15. The switching control signal from source 15 is con¬ nected through isolating resistors 16 with the gate elements of the MOSFETs 10, 11. The switching con¬ trol pulses may be modulated, as by width modulation, to control the power delivered to load 12. The forward resistance of the source-drain circuits of the MOSFETs is substantially the same. Accordingly, the forward current from the DC supply to load 12 divides substantially equally among the MOSFETs. However, the resistance of the reverse diode junctions may differ substantially from MOSFET to
MOSFET so that the reverse currents divide unequally and may exceed the reverse current rating of one or more of the MOSFETs.
In accordance with the invention, a first diode 18 is connected in parallel with the MOSFETs between the rengeerative load 12 and the terminal +V of the DC supply. Diode 18 is selected with a current rating sufficient to carry the entire reverse current from load 12. In order to prevent reverse current flow through the reverse diodes 10a, 11a of the MOSFETs, a second diode 20 is connected in series between the DC supply terminal +V and the drain elements of the
__OM_PJL. MOSFETs and poled to block the reverse current. Thus, all of the reverse current is forced to flow through the parallel connected diode 18.
Additional MOSFET switches may be connected in parallel with MOSFETs 10, 11 as indicated by the dashed lines at the right of the figure.
A suitable power MOSFET is a type IRF 450 of International Rectifier, rated to operate at 450 volts and to carry a forward current of 13 amperes. The re- verse diode also has a current rating of 13 amperes.
A power MOSFET has a very high speed switcn- ing action. Typically the turn on delay time is of the order of 35 x 10 -9 seconds with a current rise time of 50 x 10 -9 seconds. The turn off delay time is 150 x 10 -9 seconds with a current decay time of 70 x 10 -9 seconds. The frequency of the control signal
15 may be of the order of 10 KHz with pulse width modulation to control the power to the load.
OMPI

Claims

ClaimsParallel MOSFET Power Switch Circuit
1. A power switching circuit for switching power from a DC supply to a regenerative load, com¬ prising: a plurality of power MOSFETs each having source, drain and gate elements with the source-drain circuits parallel connected between the DC supply and the regenerative load, each of said MOSFETs having an inherent reverse diode junction between the source and drain elements; a control signal source having a switching control signal output connected with the gate element of each MOSFET, switching the MOSFET source-drain cir¬ cuits on and off at a selected rate; a first diode connected in parallel with the source-drain circuit of said power MOSFETs and poled to conduct reverse current from the load; and a second diode connected in series with the source drain circuits of each MOSFET and poled to block current flow through the reverse diode junction of the MOSFETs.
2. The power switching circuit of claim 1 including isolation resistors connected between the control signal source and the gate element of each of said MOSFETs.
3. The power switchint circuit of claim 1 in which the DC supply has positive and negative ter¬ minals and the load has two terminals , said second
OMPI fa. WIPO -URNAΥ\ diode being connected between one of the terminals of the DC supply and the source-drain circuits of said MOSFETs, one terminal of said load being connected with the source-drain circuits of said MOSFETs, the other terminal of said load being connected with the other terminal of said DC supply and said first diode being connected between said one terminal of the load and said one terminal of the DC supply.
PCT/US1984/000672 1983-06-27 1984-05-03 Parallel mosfet power switch circuit Ceased WO1985000253A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG942/86A SG94286G (en) 1983-06-27 1986-12-11 Parallel mosfet power switch circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/507,737 US4532443A (en) 1983-06-27 1983-06-27 Parallel MOSFET power switch circuit
US507,737 1983-06-27

Publications (1)

Publication Number Publication Date
WO1985000253A1 true WO1985000253A1 (en) 1985-01-17

Family

ID=24019904

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1984/000672 Ceased WO1985000253A1 (en) 1983-06-27 1984-05-03 Parallel mosfet power switch circuit

Country Status (9)

Country Link
US (1) US4532443A (en)
EP (1) EP0148855B1 (en)
JP (1) JPS60501682A (en)
CA (1) CA1224842A (en)
DE (1) DE3490296T1 (en)
GB (1) GB2152779B (en)
IL (1) IL71892A (en)
SG (1) SG94286G (en)
WO (1) WO1985000253A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288971A3 (en) * 1987-04-30 1990-02-07 Hitachi, Ltd. Monolithic integrated circuit device
WO1993019949A1 (en) * 1992-03-30 1993-10-14 Solaria Research Enterprises Ltd. An optimal dc motor/controller configuration
EP0618679A1 (en) * 1993-03-31 1994-10-05 STMicroelectronics S.r.l. High reliable integrated circuit structure for MOS power devices
US11923707B2 (en) 2018-11-16 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Battery protection circuit, power storage device, and electric device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4616142A (en) * 1984-12-31 1986-10-07 Sundstrand Corporation Method of operating parallel-connected semiconductor switch elements
US4683387A (en) * 1985-12-03 1987-07-28 The United States Of America As Represented By The Secretary Of The Air Force Quadrature switch apparatus for multi mode phase shift drivers
DE3626130A1 (en) * 1986-08-01 1988-02-11 Merck Patent Gmbh AMINO ACID DERIVATIVES
JP2656537B2 (en) * 1988-04-13 1997-09-24 株式会社日立製作所 Power semiconductor device
JP2837054B2 (en) * 1992-09-04 1998-12-14 三菱電機株式会社 Insulated gate semiconductor device
DE4240501A1 (en) * 1992-12-02 1994-06-09 Export Contor Ausenhandelsgese Power semiconductor circuit arrangement
JPH07225622A (en) * 1994-02-10 1995-08-22 Fujitsu Ltd Constant current circuit using field effect transistor
US5583384A (en) * 1995-06-07 1996-12-10 National Semiconductor Corporation Method and apparatus for connecting and disconnecting a power field effect transistor
JP3149773B2 (en) * 1996-03-18 2001-03-26 富士電機株式会社 Insulated gate bipolar transistor with current limiting circuit
JP2003014802A (en) * 2001-06-28 2003-01-15 Sony Corp Regenerative load device and load test method
EP1349254B1 (en) * 2002-03-29 2012-03-28 POWER ONE ITALY S.p.A. Power rectifier with power supply cut-off means
DE10240247A1 (en) * 2002-08-31 2004-03-18 Daimlerchrysler Ag Power controlled fuel cell
CN100466473C (en) * 2003-09-03 2009-03-04 Nxp股份有限公司 Failure Prediction of Parallel MOSFETs
DE102004041088B4 (en) * 2004-08-24 2009-07-02 Infineon Technologies Ag Semiconductor component in flat conductor technology with a semiconductor chip and method for its production
US7602623B2 (en) * 2007-12-28 2009-10-13 International Business Machines Corporation Apparatus, system, and method for a low cost self-healing power supply
CN102149429B (en) 2008-07-10 2016-10-12 康奈尔大学 Produce the device of ultrasound wave
CN101650589B (en) * 2008-08-11 2011-12-21 鸿富锦精密工业（深圳）有限公司 Power-switching circuit
EP2507891B1 (en) * 2009-12-04 2018-03-28 A123 Systems LLC Battery with integrated power management system and scalable battery cutoff component
US9372210B1 (en) 2013-06-20 2016-06-21 Silego Technology, Inc. Dynamic power FET switching
WO2016192799A1 (en) 2015-06-04 2016-12-08 Arcelik Anonim Sirketi Parallel-coupled switching devices and switch-mode power converter
KR102672130B1 (en) 2018-11-01 2024-06-05 삼성전자주식회사 A method and an electronic device powered by an external device
US20240181887A1 (en) 2022-12-01 2024-06-06 Mercedes-Benz Group AG Configurable power inverter

Citations (5)

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US3209161A (en) * 1961-03-08 1965-09-28 John C Lovci Information transfer system
US3641407A (en) * 1970-10-26 1972-02-08 Teletype Corp Inductor surge protection for transistors
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
US4363068A (en) * 1980-08-18 1982-12-07 Sundstrand Corporation Power FET short circuit protection
US4420784A (en) * 1981-12-04 1983-12-13 Eaton Corporation Hybrid D.C. power controller

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636385A (en) * 1970-02-13 1972-01-18 Ncr Co Protection circuit
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3209161A (en) * 1961-03-08 1965-09-28 John C Lovci Information transfer system
US3641407A (en) * 1970-10-26 1972-02-08 Teletype Corp Inductor surge protection for transistors
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
US4363068A (en) * 1980-08-18 1982-12-07 Sundstrand Corporation Power FET short circuit protection
US4420784A (en) * 1981-12-04 1983-12-13 Eaton Corporation Hybrid D.C. power controller

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288971A3 (en) * 1987-04-30 1990-02-07 Hitachi, Ltd. Monolithic integrated circuit device
WO1993019949A1 (en) * 1992-03-30 1993-10-14 Solaria Research Enterprises Ltd. An optimal dc motor/controller configuration
AU668155B2 (en) * 1992-03-30 1996-04-26 Solaria Research Enterprises Ltd. An optimal DC motor/controller configuration
EP0618679A1 (en) * 1993-03-31 1994-10-05 STMicroelectronics S.r.l. High reliable integrated circuit structure for MOS power devices
US11923707B2 (en) 2018-11-16 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Battery protection circuit, power storage device, and electric device

Also Published As

Publication number Publication date
JPS60501682A (en) 1985-10-03
EP0148855B1 (en) 1989-08-02
GB2152779A (en) 1985-08-07
IL71892A0 (en) 1984-09-30
SG94286G (en) 1987-09-18
GB8503180D0 (en) 1985-03-13
US4532443A (en) 1985-07-30
GB2152779B (en) 1986-08-13
EP0148855A4 (en) 1986-09-24
CA1224842A (en) 1987-07-28
IL71892A (en) 1988-03-31
DE3490296T1 (en) 1985-08-08
EP0148855A1 (en) 1985-07-24

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