WO1994000870A2 - Chemical vapor deposition from single organometallic precursors - Google Patents

Chemical vapor deposition from single organometallic precursors Download PDF

Info

Publication number
WO1994000870A2
WO1994000870A2 PCT/US1993/005796 US9305796W WO9400870A2 WO 1994000870 A2 WO1994000870 A2 WO 1994000870A2 US 9305796 W US9305796 W US 9305796W WO 9400870 A2 WO9400870 A2 WO 9400870A2
Authority
WO
WIPO (PCT)
Prior art keywords
passivating
substrate
buffer film
precursor
volatilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1993/005796
Other languages
French (fr)
Other versions
WO1994000870A3 (en
Inventor
Andrew R Barron
Michael B Power
Andrew N Macinnes
Aloysius F Hepp
Phillip P Jenkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Aeronautics and Space Administration NASA
Harvard University
Original Assignee
National Aeronautics and Space Administration NASA
Harvard University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Aeronautics and Space Administration NASA, Harvard University filed Critical National Aeronautics and Space Administration NASA
Priority to AU46386/93A priority Critical patent/AU4638693A/en
Priority to EP93916588A priority patent/EP0647353A1/en
Priority to CA002138951A priority patent/CA2138951A1/en
Priority to JP50245194A priority patent/JP3249822B2/en
Publication of WO1994000870A2 publication Critical patent/WO1994000870A2/en
Publication of WO1994000870A3 publication Critical patent/WO1994000870A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate (42). The organometallic precursor is volatilized at a precursor source (38). A carrier gas is directed from a carrier gas source (26) across the precursor source (38) to conduct the volatilized precursor from the precursor source (38) to the substrate (42). The volatilized precursor pyrolyzes and is deposited onto the substrate (42), thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.
PCT/US1993/005796 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors Ceased WO1994000870A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU46386/93A AU4638693A (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors
EP93916588A EP0647353A1 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors
CA002138951A CA2138951A1 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors
JP50245194A JP3249822B2 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from a single organometallic precursor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/903,256 US5300320A (en) 1992-06-23 1992-06-23 Chemical vapor deposition from single organometallic precursors
US07/903,256 1992-06-23

Publications (2)

Publication Number Publication Date
WO1994000870A2 true WO1994000870A2 (en) 1994-01-06
WO1994000870A3 WO1994000870A3 (en) 1994-03-03

Family

ID=25417193

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1993/005796 Ceased WO1994000870A2 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors

Country Status (7)

Country Link
US (1) US5300320A (en)
EP (1) EP0647353A1 (en)
JP (1) JP3249822B2 (en)
AU (1) AU4638693A (en)
CA (1) CA2138951A1 (en)
TW (1) TW244397B (en)
WO (1) WO1994000870A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996020943A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Liquid precursor for cubic-phase passivating/buffer film
WO1996021251A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Minority carrier device

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429989A (en) * 1994-02-03 1995-07-04 Motorola, Inc. Process for fabricating a metallization structure in a semiconductor device
US5760462A (en) * 1995-01-06 1998-06-02 President And Fellows Of Harvard College Metal, passivating layer, semiconductor, field-effect transistor
US6124427A (en) * 1997-03-31 2000-09-26 North Dakota State University Organometallic single source precursors for inorganic films coatings and powders
US5906898A (en) * 1997-09-18 1999-05-25 M-C Power Corporation Finned internal manifold oxidant cooled fuel cell stack system
US6372356B1 (en) 1998-06-04 2002-04-16 Xerox Corporation Compliant substrates for growing lattice mismatched films
DE10200929A1 (en) * 2002-01-12 2003-07-31 Basf Coatings Ag Polysiloxane brine, process for their preparation and their use
US20070082128A1 (en) * 2003-03-03 2007-04-12 Dechema Gesellscaft Fur Chemische Technik Und Biotechnologie E.V. Method for coating a substrate
KR100789064B1 (en) * 2006-07-14 2007-12-26 중앙대학교 산학협력단 Method for producing Cuyns2 thin film by metal organic vapor deposition method, Cuyns2 thin film manufactured therein and method for producing In2s3 thin film using same
TWI485276B (en) * 2013-12-05 2015-05-21 Nat Inst Chung Shan Science & Technology Evaporation apparatus with improved selenium compound film growing quality
EP3173507A1 (en) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Method for the organometallic gas phase deposition under use of solutions of indiumalkyl compounds in hydrocarbons
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6947914B2 (en) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Annealing chamber under high pressure and high temperature
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP2021503714A (en) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Capacitor system for high pressure processing system
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020101935A1 (en) * 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU570239A1 (en) * 1976-02-12 1979-02-10 Институт химии АН СССР Method of obtaining crystalline compounds of a-iy and b-yi
JPS59123226A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Device for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996020943A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Liquid precursor for cubic-phase passivating/buffer film
WO1996021251A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Minority carrier device

Also Published As

Publication number Publication date
JP3249822B2 (en) 2002-01-21
TW244397B (en) 1995-04-01
EP0647353A1 (en) 1995-04-12
US5300320A (en) 1994-04-05
CA2138951A1 (en) 1994-01-06
JPH08504057A (en) 1996-04-30
WO1994000870A3 (en) 1994-03-03
AU4638693A (en) 1994-01-24

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