WO1997040206A1 - Dispositif et procede pour le depot en phase vapeur en continu sur un film - Google Patents
Dispositif et procede pour le depot en phase vapeur en continu sur un film Download PDFInfo
- Publication number
- WO1997040206A1 WO1997040206A1 PCT/JP1997/001368 JP9701368W WO9740206A1 WO 1997040206 A1 WO1997040206 A1 WO 1997040206A1 JP 9701368 W JP9701368 W JP 9701368W WO 9740206 A1 WO9740206 A1 WO 9740206A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- evaporation
- vapor deposition
- point
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
Definitions
- the present invention uses an electron beam method (hereinafter abbreviated as an EB method) to continuously and stably deposit a single layer or multiple thin films of a dielectric or metal on a running organic polymer film.
- the present invention relates to a continuous vapor deposition processing apparatus for forming a film, and a method for continuously forming a single-layer or multi-layer thin film of a dielectric or a metal on a long and wide organic polymer film using the apparatus.
- the present invention makes it possible to form a film having a uniform film thickness distribution in the width direction and the length direction on a long organic polymer film so that the width of the vapor deposition processing is 500 mm or more.
- the present invention relates to a continuous vapor deposition processing apparatus and a continuous vapor deposition processing method for a film.
- a silicon dioxide thin film is widely formed on a polyester film or the like.
- the purpose is to provide gas barrier properties, strict accuracy and uniformity are not required for the thickness and structure of the film.
- a dielectric material such as silicon dioxide
- many thin films of a dielectric material have been formed as one constituent layer of a multilayer film for the purpose of preventing reflection.
- Japanese Patent Application Laid-Open No. 56-113101 discloses that a silicon dioxide film of about 1 micron is vacuum-deposited on a plastic substrate, and a multilayer film is further reflected thereon.
- a method for coating a barrier film is disclosed.
- a hard coat layer is provided on a transparent plastic substrate, and the first and fourth layers are made of a silicon dioxide film.
- Optical articles having a multilayer antireflection film formed thereon have been proposed. In this case, since the purpose is optical use such as anti-reflection, it is natural that accuracy and uniformity are important for the film thickness.
- the present inventors have deposited a thin film of a dielectric or a metal typified by a metal oxide such as silicon dioxide as a constituent layer of a multilayer film continuously by vapor deposition on a long film by an EB method.
- a deposition material such as silicon dioxide
- a rotating hearth (a hearth means a container for storing an evaporation source material) is loaded with a dielectric material or a metal oxide as an evaporation material, and can be moved in a fixed direction at all times.
- the deposition rate at any point on the substrate plane is COS n ⁇ ( ⁇ : evaporation point It has been verified experimentally and logically that it is proportional to the angle between a point and any point, n: 4 ⁇ 7). From these facts, in order to realize a uniform deposition rate with respect to the surface of the substrate (in the case of the present invention: the running film), basically, the surface having the same density distribution of evaporation density. It is necessary to install the substrate along a curved surface along cos n 0 (in the case of the present invention: running the film).
- the film thickness and uniformity can be controlled by adjusting the traveling speed in the length direction.
- an appropriate correction plate for uniformity of the film thickness is provided up to about 500 mm in the width direction, and one EB gunno and one evaporation source can cover it.
- an object of the present invention is to provide an organic polymer film that continuously travels by a vapor deposition method in which an evaporation source material is stored in a hearth that moves at a constant speed, and the evaporation source is continuously moved to an electron beam irradiation point.
- a single-layer or multi-layer thin film of a dielectric or metal deposition material is continuously formed so that the deposition width (L) is 500 mm or more, and preferably 100 mm or more. It is an object of the present invention to provide a continuous vapor deposition processing apparatus capable of achieving a thin film having improved accuracy and uniformity with respect to the thickness and structure of the film. It does not provide a vapor deposition processing method.
- an object of the present invention is to provide a plurality of EB (electron gun) evaporation points, and to optimally design the number and positions of evaporation sources to achieve uniformity in the width direction and maximum productivity. Therefore, it is intended to provide a continuous vapor deposition machine for a film capable of achieving a thin film having improved accuracy and uniformity with respect to the thickness and structure of the film. It is not intended to provide a continuous deposition processing method for the film used. As a result of intensive studies by the present inventors, the above object of the present invention has been industrially advantageously achieved by the present invention having the following constitution.
- the evaporation source material is stored in a hearth that moves at a constant speed, and the evaporation source is continuously supplied to the irradiation point of the electron beam.
- a vapor deposition processing apparatus that continuously forms a single-layer or multilayer thin film of a dielectric or metal vapor deposition material so that the width (L) is 500 mm or more, and satisfies the following requirements. Film deposition equipment.
- Two or more electron beam irradiation points shall be provided for one type of vapor deposition material along the width direction of the film.
- the vertical distance (D) between the electron beam irradiation point and the running surface of the film must be at least 300 mm.
- the moving direction and the moving speed of the hearth can be set individually.
- An appropriate correction plate must be provided between the electron beam irradiation point and the running surface of the film to make the vapor deposition rate distribution in the width direction uniform.
- the number of electron beam irradiation points is assumed to be 2 m (m: an integer of 1 or more), and for the center position in the film width direction ⁇ 200 mm point (point A) , And m are arranged so as to be almost symmetrical with each other, and the distance (X) between the electron beam irradiation points at both ends in the width direction and point A is within a range represented by the following equation.
- the number of electron beam irradiation points is 2 m + l (in: an integer of 1 or more), and the center position in the width direction of the film ⁇ 200 mm point (point A) ), And the other 2 m are arranged at right and left m each so as to be almost symmetrical with respect to point A, and the electron beam irradiation points at both ends in the width direction and point A Characterized in that the distance (X) of the film is within the range represented by the following formula: [1].
- the continuous vapor deposition processing device of [4] above is used to deposit the vapor deposition width on the organic polymer film running continuously.
- a method for continuously depositing a film comprising continuously depositing a single-layer or multilayer thin film of a dielectric or metal deposition material so that (L) is at least 500 mm.
- FIG. 1 is a schematic view of equipment conditions around an evaporation system, such as a film, arrangement of a plurality of evaporation points, a hearth for loading a deposition material therefor, and a rotation direction thereof, for carrying out an embodiment of the present invention.
- FIG. 1 is a schematic view of equipment conditions around an evaporation system, such as a film, arrangement of a plurality of evaporation points, a hearth for loading a deposition material therefor, and a rotation direction thereof, for carrying out an embodiment of the present invention.
- Figure 2 shows the thickness of the silicon dioxide film in the film width direction when silicon dioxide was deposited on film F under specific deposition conditions using Haas H3 and the corresponding EB gun. It is a graph showing the distribution.
- FIG. 3 is a graph showing the distribution of the total evaporation of the evaporation points El, E2, E3, E4, and E5 in the example.
- the organic polymer film one suitable for forming and depositing one or a plurality of layers of vapor-deposited films corresponding to a desired function and performing and exhibiting the function is used.
- polyolefin resin, polymethacrylate resin, polyester resin, polycarbonate resin, and triacetate which are transparent to transmit visible light
- examples include films made of resin.
- a hard coat layer may be formed on the surface.
- the film includes a sheet.
- An object of the present invention is to stably deposit a thin film of a dielectric material typified by silicon dioxide, a metal oxide or a metal on a wide and long film continuously and stably.
- a dielectric material typified by silicon dioxide, a metal oxide or a metal
- the organic polymer film specifically, a film having a width of 500 mm or more, a length of several tens m, preferably a length of several hundred m is usually used.
- a ⁇ having an intended function such as an antireflection film is formed on one surface, and the display is used in close contact with the other surface. It is also desirable to apply some kind of chemical or physical surface treatment (coating, corona discharge treatment, etc.) to improve the adhesiveness of the bonding surface.
- the metal oxide such as silicon dioxide to be vapor-deposited is loaded into the hearth in a solid state, but may be any solid formed from powder, granules, or a melt in accordance with the shape of the hearth.
- the volume density is small, so it is desirable to continuously or intermittently replenish the amount corresponding to the amount consumed for vapor deposition.
- the bulk density is large, so it is desirable that the mass required for one continuous vapor deposition be one molded product.
- the electron beam is easily reflected on the surface, so the surface is roughened in order to efficiently absorb the irradiation energy, or thin powder or granules are laid on the staff to start evaporation. It is also good to do it. It is also necessary to ensure that the hearth is grounded to avoid charge buildup.
- conductive materials such as ITO (Indium ⁇ Tin Oxide) even in the case of metal oxides, when using high-frequency plasma as an auxiliary means, avoid a current short from the plasma to the hearth and the deposition material. Therefore, Haas must be completely isolated from grounds.
- D is essential to be at least 300 mm, preferably at least 500 mm, and two or more evaporation points (EB irradiation points) are required. It is wasteful to place the evaporation point far beyond the width of the evaporation process due to the limited spatial size of the vacuum system. Therefore, the number of evaporation points (EB irradiation points) is naturally limited. On average, it is realistic to arrange one evaporation point for the evaporation processing width of 25050 mm. Naturally, when considering an arbitrary point on the substrate (film), evaporation particles from all evaporation sources are basically deposited, and the evaporation rate is determined.
- the problem is how to arrange a plurality of evaporation points (EB irradiation points) in the width direction and calculate the sum of the plurality of evaporation distributions over the entire effective vapor deposition width (L). Is it uniform? At this time, it is impossible to make the sum of a plurality of evaporation distributions uniform in the film surface width direction at all.Therefore, considering the allowable distribution width, the unevenness of the sum of the evaporation distributions should be appropriately adjusted. It is necessary to prepare an appropriate compensator in the form of a control. It can be said that minimizing the portion where the vapor deposition must be blocked by this correction plate is a problem in the case of a plurality of arrangements. In addition, it is not necessary to make all the evaporation amounts the same, and the entire distribution balance is optimized by the arrangement and the control of the evaporation amount at each evaporation point.
- EB irradiation points evaporation points
- the vapor deposition material In order to form a film on a continuous long film, the vapor deposition material must be supplied sufficiently, but it is difficult to supply sufficient vapor deposition material at one fixed position in a stable vapor deposition state. Therefore, by filling the evaporation material into a hearth or rotatable container that moves at a constant speed, and constantly rotating the evaporation point to the EB irradiation point, a continuous long filter can be filled at one time. It is desirable to provide a method that covers the required deposition amount of LUM, or supplies granules or powder at a position distant from the EB irradiation point in proportion to the consumption.
- a molded product that is melt-cooled and has a shape that can be stored in close contact with a moving container is desirable in order to secure the bulk density.
- a rotating sleeve with an annular cross section with a certain depth can be advantageously used for this purpose.
- the spatial distribution of evaporation varies depending on the moving direction (rotation direction) of the evaporation material, so that the moving direction and moving speed of the same number of cells corresponding to the plurality of evaporation points are set independently. It is necessary to make the distribution of the sum of evaporation in the width direction uniform as much as possible.
- the distribution is not point-symmetric with respect to the evaporation point, but has a certain slope. Therefore, the sum of the distributions of multiple evaporation points is also Is not always symmetric. Therefore, it is necessary to set the center point of the film to be vapor-deposited (500 mm or more in the present invention) at a position different from the center point and the center point of the arrangement of a plurality of evaporation points.
- the layout design of the remaining evaporation points can be determined by a simple trial calculation.
- the arrangement of these multiple evaporation points (electron beam positions) does not necessarily have to be exactly symmetrical.
- the final layout design is possible by fine-tuning the layout design in the direction that minimizes the unevenness of the distribution of the sum of the patterns.
- the unevenness of the total distribution of evaporation that still remains in the width direction must be finally addressed by installing an appropriate correction plate.
- the technology of forming a stable vapor-deposited film of a metal oxide on a long film by the EB method of the present invention can be used for vapor deposition of various vapor-deposited substances.
- the deposited film of highly viscous metal oxide such as aluminum oxide, cesium oxide, tin oxide, antimony oxide, lead oxide, etc., with high precision in thickness, etc. It is excellent and effective when trying to form.
- the method for forming a dielectric or conductor such as a metal oxide (such as ITO) and a metal vapor deposition film of the present invention is not limited to the case where the film is formed as a single layer on the film surface, and the method for forming the reflection film It is needless to say that the present invention is also effective when a film is formed as a constituent layer in a multi-layer structure such as a protective film.
- deposition assisting means such as a high-frequency plasma, an ion beam, and a plasma gun, which are often used in this field. It is also desirable to use assistingmeasures) together.
- Fig. 1 shows a model diagram of the overall relationship between the running film system and the arrangement of the evaporation points of the five rotating hearths when the embodiment was performed.
- a horizontal cross section of the rotating hearth and a view from directly above are also shown.
- Thickness 150 / m, width 1100 mm, length 500 m One side of the polyethylene terephthalate film was coated with a 6 / m-thick hard coat mainly composed of a UV-curable polyfunctional acrylic resin.
- an antireflection film was formed, in which the first layer was composed of zirconium oxide, the second and fourth layers were composed of silicon dioxide, and the third layer was composed of titanium oxide.
- Each of these deposition materials was molded into a disk having an outer ring diameter of 16 Omm, an inner ring diameter of 9 Omm, and a thickness of 15 mm so that it could be in close contact with the inside of the rotating hearth.
- Fig. 1 Five rotating hearths (HI, H2, H3, H4, H5 from the left) were arranged so that they were horizontal and coplanar.
- the film running surface is set so that the vertical distance between the evaporation point (E1, E2, E3, E4, E5 from the left) and the running film surface at each hearth is 600 mm.
- the hearths and the EB gun (not shown) were set so that the points E1 and E5 and E2 and E4 were point-symmetric with respect to the evaporation point E3. .
- Figure 2 shows a preliminary experiment, using only Haas H3 and the corresponding EB gun, using silicon dioxide on film F and specific deposition conditions (hearth rotation speed, EB irradiation conditions, film running speed, etc.).
- the results of measuring the distribution of the thickness of the silicon dioxide vapor-deposited film in the film width direction when vapor deposition was performed by the method shown in FIG. At this time, the rotation direction of Haas H3 was the same counterclockwise as in FIG.
- the film thickness distribution is not symmetric with respect to the point F 0 on the film just above the evaporation point E3. This is the deviation from the target determined by the rotation direction, rotation speed, and EB irradiation conditions of the hearth as described above. This deviation can be estimated to some extent by calculation, but in practice it is measured experimentally and the results are used to determine the evaporation points El, E2, E3, E4, E5, Haas HI, H2 , H3, H4, H5 are determined and the rotation direction is determined. Given the distribution in Fig. 2, optimization of the film thickness distribution over the entire film can be achieved by trial calculation or computer calculation. In this case, as shown in FIG.
- the evaporation points El, E2, E4, and E5 are respectively 600 mm, 350 mm, 35 Omm, and 600 mm from the evaporation point E3.
- the distribution of the sum of the evaporation points El, E2, E3, E4, and E5 as shown in Fig. 3 could be obtained.
- the direction of rotation of each hearth is calculated, and as a preferable setting, HI, H2, H 4 is the clockwise hand rotation direction, and H3 and H5 are the counterclockwise hand rotation directions.
- the spatial arrangement of five evaporation points (five EB guns), the rotation direction of the hearth, and the shape of the compensator could be set for the target evaporation width of 1100 mm.
- the second and fourth layers of silicon dioxide were deposited as constituent layers of the multilayer film.
- the first layer of zirconium oxide and the third layer of titanium oxide were also subjected to the same preliminary experiment as described above, and then each had its evaporation point (five EB guns) layout design, correction plate shape, hearth rotation conditions (direction and direction). Speed) was set to form an antireflection film composed of four layers.
- the resulting anti-reflection coating has a reflectance of 1.0% or less in the visible light region with a wavelength of 450-650 nm over a total length of 500 m and a width of 110 mm in the width direction of the film. As a result, it was possible to obtain an antireflection film having extremely uniform properties.
- the center position of the five evaporation points (E3) could be matched with the center position in the width direction of the film, but the distribution of the single evaporation point of E3 was remarkably asymmetric.
- the center position of the plurality of evaporation points is set to be shifted from the center point in the width direction of the film, and the relative positional relationship of the plurality of evaporation points is different from the symmetrical arrangement as in the present embodiment. It is necessary to shift it slightly.
- a metal oxide or metal thin film such as a dielectric can be continuously and stably formed on a wide and continuously long organic polymer film by a vapor deposition method using a plurality of EB guns.
- a product with uniform performance in the length direction can be obtained. Therefore, the continuous vapor deposition apparatus and the continuous vapor deposition method of the film according to the present invention can be extremely effectively used particularly for industrial production of plastic optical articles having a multilayer antireflection film.
- the plastic optical article having such a multilayer antireflection film can be effectively applied to a power source display tube, a liquid crystal display, and a glass or plastic show case.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU25770/97A AU2577097A (en) | 1996-04-22 | 1997-04-21 | Device and method for continuous vapor-deposition on film |
| EP97917452A EP0859069A1 (en) | 1996-04-22 | 1997-04-21 | Device and method for continuous vapor-deposition on film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8/124089 | 1996-04-22 | ||
| JP8124089A JPH09287074A (ja) | 1996-04-22 | 1996-04-22 | フィルムの連続蒸着加工装置および連続蒸着加工方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1997040206A1 true WO1997040206A1 (fr) | 1997-10-30 |
Family
ID=14876662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP1997/001368 Ceased WO1997040206A1 (fr) | 1996-04-22 | 1997-04-21 | Dispositif et procede pour le depot en phase vapeur en continu sur un film |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0859069A1 (ja) |
| JP (1) | JPH09287074A (ja) |
| AU (1) | AU2577097A (ja) |
| WO (1) | WO1997040206A1 (ja) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194239A (ja) * | 1984-10-16 | 1986-05-13 | Fuji Photo Film Co Ltd | 磁気記録媒体の製造方法 |
-
1996
- 1996-04-22 JP JP8124089A patent/JPH09287074A/ja active Pending
-
1997
- 1997-04-21 EP EP97917452A patent/EP0859069A1/en not_active Withdrawn
- 1997-04-21 WO PCT/JP1997/001368 patent/WO1997040206A1/ja not_active Ceased
- 1997-04-21 AU AU25770/97A patent/AU2577097A/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6194239A (ja) * | 1984-10-16 | 1986-05-13 | Fuji Photo Film Co Ltd | 磁気記録媒体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0859069A1 (en) | 1998-08-19 |
| JPH09287074A (ja) | 1997-11-04 |
| AU2577097A (en) | 1997-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4831841B2 (ja) | 真空蒸着装置及び方法 | |
| JP6385487B2 (ja) | 基板をコーティングするための方法およびコータ | |
| TWI526564B (zh) | Film forming apparatus and film forming method | |
| US8961692B2 (en) | Evaporating apparatus | |
| KR970077147A (ko) | 박막과, 박막을 형성하기 위한 방법 및 장치와, 박막을 합체시킨 전자 구성품 | |
| US9981455B2 (en) | Gas barrier film, apparatus, and process for producing gas barrier film | |
| US5980975A (en) | Thin-film-coated substrate manufacturing methods having improved film formation monitoring and manufacturing apparatus | |
| KR102337787B1 (ko) | 기판을 코팅하기 위한 방법들 및 코터 | |
| RU2578336C2 (ru) | Улучшенный способ совместного распыления сплавов и соединений с использованием двойной с-mag конструкции катода и соответствующая установка | |
| US20010007715A1 (en) | Method of coating substrate and coated article | |
| JP3958871B2 (ja) | ITO膜形成方法およびSiOx膜形成方法 | |
| TWI649443B (zh) | 用於沉積材料於軟質基材上的蒸發設備及其方法 | |
| JP2013544322A (ja) | 蒸着ユニット及び真空コーティング装置 | |
| JPH09287074A (ja) | フィルムの連続蒸着加工装置および連続蒸着加工方法 | |
| CN100478488C (zh) | 渐变式光学薄膜镀制装置及其治工具套环 | |
| CN116356260B (zh) | 一种膜层厚度控制装置 | |
| JPH09287069A (ja) | 連続蒸着方法 | |
| KR20160001919U (ko) | 스퍼터링 장치 | |
| JPH09209130A (ja) | 金属酸化物薄膜の蒸着方法 | |
| JPH07109569A (ja) | 薄膜形成方法 | |
| Panfilov et al. | Ultrathin film deposition for nanoelectronic device manucturing | |
| JP6283332B2 (ja) | 蒸着ユニット及び真空コーティング装置 | |
| JPH1161389A (ja) | 蒸着方法及び電子ビーム蒸着装置 | |
| KR200399626Y1 (ko) | 이온 발생 장치 및 이를 이용한 박막 증착 장치 | |
| JPWO1995033081A1 (ja) | 薄膜つき基板、その製造方法および製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AU CA KR US |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 1997917452 Country of ref document: EP |
|
| WWP | Wipo information: published in national office |
Ref document number: 1997917452 Country of ref document: EP |
|
| NENP | Non-entry into the national phase |
Ref country code: CA |
|
| WWW | Wipo information: withdrawn in national office |
Ref document number: 1997917452 Country of ref document: EP |