WO1998044766A3 - Teilchenmanipulierung - Google Patents

Teilchenmanipulierung Download PDF

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Publication number
WO1998044766A3
WO1998044766A3 PCT/EP1998/001938 EP9801938W WO9844766A3 WO 1998044766 A3 WO1998044766 A3 WO 1998044766A3 EP 9801938 W EP9801938 W EP 9801938W WO 9844766 A3 WO9844766 A3 WO 9844766A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
particles
substrate
reaction vessel
crystalline state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1998/001938
Other languages
English (en)
French (fr)
Other versions
WO1998044766A2 (de
Inventor
Gregor Morfill
Hubertus Thomas
Timo Stuffler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kayser Threde GmbH
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Kayser Threde GmbH
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kayser Threde GmbH, Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Kayser Threde GmbH
Priority to US09/402,295 priority Critical patent/US6517912B1/en
Priority to EP98919213A priority patent/EP0972431B1/de
Priority to JP54117798A priority patent/JP2001518230A/ja
Priority to DE59813144T priority patent/DE59813144D1/de
Publication of WO1998044766A2 publication Critical patent/WO1998044766A2/de
Publication of WO1998044766A3 publication Critical patent/WO1998044766A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/04—Acceleration by electromagnetic wave pressure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

Bei einem Verfahren zur Manipulierung von Teilchen, die in einem plasmakristallinen Zustand in einem Plasma eines Trägergases angeordnet sind, werden die Teilchen mindestens teilweise einer Plasmabehandlung unterzogen und/oder auf einer Substratoberfläche aufgetragen. Eine Vorrichtung zur Manipulierung von Teilchen im plasmakristallinen Zustand umfaßt ein Reaktionsgefäß, in dem Plasmaelektroden und mindestens ein Substrat angeordnet sind. Es wird eine adaptive Elektrode zur ortsselektiven Ausbildung eines niederfrequenten oder statischen elektrischen Feldes im Reaktionsgefäß beschrieben.
PCT/EP1998/001938 1997-04-02 1998-04-02 Teilchenmanipulierung Ceased WO1998044766A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US09/402,295 US6517912B1 (en) 1997-04-02 1998-04-02 Particle manipulation
EP98919213A EP0972431B1 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung
JP54117798A JP2001518230A (ja) 1997-04-02 1998-04-02 粒子操作
DE59813144T DE59813144D1 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19713637A DE19713637C2 (de) 1997-04-02 1997-04-02 Teilchenmanipulierung
DE19713637.0 1997-04-02

Publications (2)

Publication Number Publication Date
WO1998044766A2 WO1998044766A2 (de) 1998-10-08
WO1998044766A3 true WO1998044766A3 (de) 1999-01-07

Family

ID=7825258

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1998/001938 Ceased WO1998044766A2 (de) 1997-04-02 1998-04-02 Teilchenmanipulierung

Country Status (5)

Country Link
US (1) US6517912B1 (de)
EP (1) EP0972431B1 (de)
JP (1) JP2001518230A (de)
DE (2) DE19713637C2 (de)
WO (1) WO1998044766A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19814871A1 (de) * 1998-04-02 1999-10-07 Max Planck Gesellschaft Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition
DE19926494C2 (de) * 1999-06-10 2001-07-26 Max Planck Gesellschaft Verfahren und Vorrichtung zur Abbildung von mikroskopisch kleinen Teilchen
JP2006318702A (ja) * 2005-05-11 2006-11-24 Mitsubishi Electric Corp 電子放出源の製造方法
US9246298B2 (en) 2012-06-07 2016-01-26 Cymer, Llc Corrosion resistant electrodes for laser chambers
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
WO2019004189A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
CN114666965B (zh) 2017-06-27 2025-08-01 佳能安内华股份有限公司 等离子体处理装置
PL3648554T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
EP4017223B1 (de) 2017-06-27 2025-10-15 Canon Anelva Corporation Plasmaverarbeitungsvorrichtung
EP3648550B1 (de) 2017-06-27 2021-06-02 Canon Anelva Corporation Plasmabehandlungsvorrichtung
PL3817517T3 (pl) 2018-06-26 2024-10-28 Canon Anelva Corporation Urządzenie do obróbki plazmą, sposób obróbki plazmą, program oraz nośnik pamięci

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EP0303510A2 (de) * 1987-08-13 1989-02-15 Seiko Epson Corporation Flüssigkristall-Anzeigegerät
US5252954A (en) * 1989-03-13 1993-10-12 Hitachi, Ltd. Multiplexed driving method for an electrooptical device, and circuit therefor

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US5108543A (en) 1984-11-07 1992-04-28 Hitachi, Ltd. Method of surface treatment
JPS61158877A (ja) 1984-12-27 1986-07-18 小宮山　宏 セラミツクス多孔質膜の製造方法
DE3729347A1 (de) 1986-09-05 1988-03-17 Mitsubishi Electric Corp Plasmaprozessor
US4740267A (en) 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
DE4018954A1 (de) 1989-06-15 1991-01-03 Mitsubishi Electric Corp Trockenaetzgeraet
US5102496A (en) * 1989-09-26 1992-04-07 Applied Materials, Inc. Particulate contamination prevention using low power plasma
DE4118072C2 (de) 1991-06-01 1997-08-07 Linde Ag Verfahren zur Stoßwellenbeschichtung von Substraten
JP3137682B2 (ja) * 1991-08-12 2001-02-26 株式会社日立製作所 半導体装置の製造方法
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
DE69420774T2 (de) * 1993-05-13 2000-01-13 Applied Materials, Inc. Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen
DE4316349C2 (de) * 1993-05-15 1996-09-05 Ver Foerderung Inst Kunststoff Verfahren zur Innenbeschichtung von Hohlkörpern mit organischen Deckschichten durch Plasmapolymerisation, sowie Vorrichtung zur Durchführung des Verfahrens
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
KR100333237B1 (ko) * 1993-10-29 2002-09-12 어플라이드 머티어리얼스, 인코포레이티드 플라즈마에칭챔버내에서오염물질을감소시키는장치및방법
US5518547A (en) * 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
JPH07226395A (ja) 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
US5637190A (en) * 1995-09-15 1997-06-10 Vanguard International Semiconductor Corporation Plasma purge method for plasma process particle control
DE19538045C1 (de) * 1995-10-13 1997-01-30 Forschungszentrum Juelich Gmbh Vorrichtung zur Beschichtung von Substraten
US5746928A (en) * 1996-06-03 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd Process for cleaning an electrostatic chuck of a plasma etching apparatus
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
EP0303510A2 (de) * 1987-08-13 1989-02-15 Seiko Epson Corporation Flüssigkristall-Anzeigegerät
US5252954A (en) * 1989-03-13 1993-10-12 Hitachi, Ltd. Multiplexed driving method for an electrooptical device, and circuit therefor

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
AINTS M ET AL: "Propagation of a HF point-discharge at frequencies of 10-20 MHz", GD85. PROCEEDINGS OF THE EIGHTH INTERNATIONAL CONFERENCE ON GAS DISCHARGES AND THEIR APPLICATIONS, OXFORD, UK, 16-20 SEPT. 1985, ISBN 0-85316-135-6, 1985, Leeds, UK, Leeds Univ. Press, UK, pages 398 - 401, XP002078759 *
AINTS M ET AL: "Propagation velocities of the point-electrode HF discharge", PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON HIGH VOLTAGE ENGINEERING, BRAUNSCHWEIG, WEST GERMANY, 24-28 AUG. 1987, 1987, Braunschweig, West Germany, Tech. Univ. Braunschweig, West Germany, pages 14.21/1 - 3 vol.1, XP002078758 *
DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; BINGHAM R ET AL: "The attraction of dust grains in a plasma and the formation of agglomerates", XP002071578 *
DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; STEEL W H: "The movement of dust particles in a plasma by means of a laser beam", XP002071579 *
IEE HALF-DAY COLLOQUIUM ON DUSTY PLASMAS (REF. NO.1998.267), IEE HALF-DAY COLLOQUIUM ON DUSTY PLASMAS (REF. NO.1998/267), LONDON, UK, 4 MARCH 1998, 1998, LONDON, UK, IEE, UK, pages 2/1 - 3 *
IEE HALF-DAY COLLOQUIUM ON DUSTY PLASMAS (REF. NO.1998.267), IEE HALF-DAY COLLOQUIUM ON DUSTY PLASMAS (REF. NO.1998/267), LONDON, UK, 4 MARCH 1998, 1998, LONDON, UK, IEE, UK, pages 4/1 - 3 *
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THOMAS H M ET AL: "Melting dynamics of a plasma crystal", NATURE, 29 FEB. 1996, MACMILLAN MAGAZINES, UK, vol. 379, no. 6568, ISSN 0028-0836, pages 806 - 809, XP002071577 *

Also Published As

Publication number Publication date
EP0972431A2 (de) 2000-01-19
DE19713637A1 (de) 1998-10-22
DE59813144D1 (de) 2005-12-01
DE19713637C2 (de) 1999-02-18
WO1998044766A2 (de) 1998-10-08
JP2001518230A (ja) 2001-10-09
US6517912B1 (en) 2003-02-11
EP0972431B1 (de) 2005-10-26

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