WO1998048291A3 - Magnetic field sensor comprising a wheatstone bridge - Google Patents
Magnetic field sensor comprising a wheatstone bridge Download PDFInfo
- Publication number
- WO1998048291A3 WO1998048291A3 PCT/IB1998/000331 IB9800331W WO9848291A3 WO 1998048291 A3 WO1998048291 A3 WO 1998048291A3 IB 9800331 W IB9800331 W IB 9800331W WO 9848291 A3 WO9848291 A3 WO 9848291A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnetic field
- field sensor
- wheatstone bridge
- point
- resistive elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
A magnetic field sensor comprising: a plurality of resistive elements (11a, 11a'; 11b, 11b') in a Wheatstone bridge configuration (1), whereby at least one element demonstrates a magneto-resistive effect; means for causing a measurement current to pass from a first point (5) through the bridge (1) to a second point (7); a conductive track (19) which runs in proximity to the resistive elements (11a, 11a'; 11b, 11b') but is electrically insulated therefrom, for the purpose of magnetically biasing the resistive elements with a biasing current, whereby the second point (7) is electrically connected to the conductive track (19), so that the measurement current is also employed as the biasing current.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98904349A EP0910802A2 (en) | 1997-04-18 | 1998-03-12 | Magnetic field sensor comprising a wheatstone bridge |
| JP10529326A JP2000512763A (en) | 1997-04-18 | 1998-03-12 | Magnetic field sensor with Wheatstone bridge |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97201143 | 1997-04-18 | ||
| EP97201143.1 | 1997-04-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1998048291A2 WO1998048291A2 (en) | 1998-10-29 |
| WO1998048291A3 true WO1998048291A3 (en) | 1999-01-21 |
Family
ID=8228219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IB1998/000331 Ceased WO1998048291A2 (en) | 1997-04-18 | 1998-03-12 | Magnetic field sensor comprising a wheatstone bridge |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0910802A2 (en) |
| JP (1) | JP2000512763A (en) |
| WO (1) | WO1998048291A2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005047413B8 (en) | 2005-02-23 | 2012-05-10 | Infineon Technologies Ag | A magnetic field sensor element and method for performing an on-wafer function test, and methods of fabricating magnetic field sensor elements and methods of fabricating magnetic field sensor elements having an on-wafer function test |
| US7635974B2 (en) | 2007-05-02 | 2009-12-22 | Magic Technologies, Inc. | Magnetic tunnel junction (MTJ) based magnetic field angle sensor |
| US7923987B2 (en) | 2007-10-08 | 2011-04-12 | Infineon Technologies Ag | Magnetic sensor integrated circuit with test conductor |
| US8559139B2 (en) | 2007-12-14 | 2013-10-15 | Intel Mobile Communications GmbH | Sensor module and method for manufacturing a sensor module |
| DE102008013427A1 (en) * | 2008-03-10 | 2009-11-05 | Siemens Aktiengesellschaft | Arrangement for measuring a current intensity, switching arrangement and method for measuring a current intensity |
| US8080993B2 (en) | 2008-03-27 | 2011-12-20 | Infineon Technologies Ag | Sensor module with mold encapsulation for applying a bias magnetic field |
| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN202013413U (en) * | 2011-04-06 | 2011-10-19 | 江苏多维科技有限公司 | Single chip bridge type magnetic field sensor |
| US9104922B2 (en) * | 2012-06-15 | 2015-08-11 | Honeywell International Inc. | Anisotropic magneto-resistance (AMR) gradiometer/magnetometer to read a magnetic track |
| CN103116143B (en) * | 2013-01-22 | 2015-01-14 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103323795B (en) * | 2013-06-21 | 2015-04-08 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| US10809320B2 (en) | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| US9910106B2 (en) | 2015-04-29 | 2018-03-06 | Everspin Technologies, Inc. | Magnetic field sensor with increased linearity |
| US11131727B2 (en) | 2019-03-11 | 2021-09-28 | Tdk Corporation | Magnetic sensor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500590A (en) * | 1994-07-20 | 1996-03-19 | Honeywell Inc. | Apparatus for sensing magnetic fields using a coupled film magnetoresistive transducer |
| DE19520178A1 (en) * | 1995-06-01 | 1996-12-05 | Siemens Ag | Magnetization device for magnetoresistive thin-film sensor elements in a bridge circuit |
| WO1996038738A1 (en) * | 1995-06-01 | 1996-12-05 | Siemens Aktiengesellschaft | Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part |
| WO1996038739A1 (en) * | 1995-06-01 | 1996-12-05 | Siemens Aktiengesellschaft | Magnetic field sensor with a bridge arrangement of magneto-resistive bridging elements |
-
1998
- 1998-03-12 JP JP10529326A patent/JP2000512763A/en active Pending
- 1998-03-12 WO PCT/IB1998/000331 patent/WO1998048291A2/en not_active Ceased
- 1998-03-12 EP EP98904349A patent/EP0910802A2/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500590A (en) * | 1994-07-20 | 1996-03-19 | Honeywell Inc. | Apparatus for sensing magnetic fields using a coupled film magnetoresistive transducer |
| DE19520178A1 (en) * | 1995-06-01 | 1996-12-05 | Siemens Ag | Magnetization device for magnetoresistive thin-film sensor elements in a bridge circuit |
| WO1996038738A1 (en) * | 1995-06-01 | 1996-12-05 | Siemens Aktiengesellschaft | Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part |
| WO1996038739A1 (en) * | 1995-06-01 | 1996-12-05 | Siemens Aktiengesellschaft | Magnetic field sensor with a bridge arrangement of magneto-resistive bridging elements |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998048291A2 (en) | 1998-10-29 |
| EP0910802A2 (en) | 1999-04-28 |
| JP2000512763A (en) | 2000-09-26 |
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