WO1998052773A1 - Marking diamond - Google Patents

Marking diamond Download PDF

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Publication number
WO1998052773A1
WO1998052773A1 PCT/GB1998/001493 GB9801493W WO9852773A1 WO 1998052773 A1 WO1998052773 A1 WO 1998052773A1 GB 9801493 W GB9801493 W GB 9801493W WO 9852773 A1 WO9852773 A1 WO 9852773A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
layer
mark
resist
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB1998/001493
Other languages
French (fr)
Inventor
James Gordon Charters Smith
Keith Barry Guy
Graham Ralph Powell
Michael Peter Gaukroger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gersan Ets
Original Assignee
Gersan Ets
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gersan Ets filed Critical Gersan Ets
Priority to JP55014198A priority Critical patent/JP2001526571A/en
Priority to GB9927676A priority patent/GB2339726B/en
Priority to HK00104772.6A priority patent/HK1025544B/en
Priority to EP98922948A priority patent/EP0983152B1/en
Priority to AT98922948T priority patent/ATE216322T1/en
Priority to US09/423,350 priority patent/US6358427B1/en
Priority to DE69804957T priority patent/DE69804957T2/en
Priority to AU75408/98A priority patent/AU728923B2/en
Priority to CA002291042A priority patent/CA2291042A1/en
Publication of WO1998052773A1 publication Critical patent/WO1998052773A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44B—MACHINES, APPARATUS OR TOOLS FOR ARTISTIC WORK, e.g. FOR SCULPTURING, GUILLOCHING, CARVING, BRANDING, INLAYING
    • B44B7/00—Machines, apparatus or hand tools for branding, e.g. using radiant energy such as laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C15/00—Other forms of jewellery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor

Definitions

  • the present invention relates to a method of marking a surface of a diamond to produce a mark which is invisible to the naked eye.
  • the mark may be any mark, but the invention is particularly though not exclusively directed to applying an information mark to the diamond.
  • the diamond may be for instance an industrial diamond such as a wire-drawing die, though the invention is of particular interest in marking gemstone diamonds, for instance for applying a mark which is invisible to the naked eye or invisible to the eye using a xlO loupe, when the mark can be applied to a polished facet of the gemstone without detracting from its clarity or colour grade.
  • a loupe is used, the visibility is assessed under the internationally accepted conditions for clarity grading, i.e.
  • the marks can be used to uniquely identify the gemstone by a serial number or as a brand or quality mark.
  • the mark should be capable of being viewed under suitable magnification and viewing conditions, and, if applied to a gemstone, should not detract from the value or appearance of the stone and should preferably not exhibit blackening.
  • a layer of resist is applied to the surface of the diamond, a selected zone of the resist layer is ablated to form a mask on the diamond surface, and the diamond surface is etched through the mask, wherein an electrically-conducting layer is applied to the resist layer, and an electrical connection is provided to the electrically-conducting layer to prevent charging during etching.
  • the invention extends to a diamond whose surface has been marked by the method, and to apparatus for carrying out the method.
  • etching is plasma etching.
  • an electrically-conducting layer for example metal
  • the resist can then be non-electrically-conducting.
  • the layer of metal can for instance be a layer of gold, for instance about 0.1 microns thick. It need not be applied to the whole of the resist layer, only to a region sufficiently large to prevent charging during plasma etching.
  • the bilayer mask so formed may require different ablation conditions to a single layer, but generally both layers are ablated substantially simultaneously.
  • the electrically-conducting layer effectively remains on the resist around the ablated zone, and thus prevents charging during plasma etching, whilst leaving the ablated zone clear of metal.
  • the metal should have an ablation threshold no higher than that of the resist.
  • a metal such as gold cannot be used on its own as a resist because it does not give high enough resolution, ablating too readily and leaving poorly defined edges.
  • a thicker layer of metal such as gold is used, there is a risk of the metal sputtering and redepositing in the ablated zone.
  • a completely dry technique can be used (with no chemical etching or stripping steps); although wet cleaning may be required after plasma etching in order to remove the mask, this is not a critical step requiring controlled conditions.
  • the bilayer mask can provide greatly improved resolution (particularly in relation to the laser etching technique disclosed in WO97/03846), and, in comparison with WO97/03846, requires a reduced pulse count if laser ablation is employed, for instance using about 20 pulses or fewer, say 10 pulses, rather than 500 pulses, making it practical to produce serial numbers with a sequence of masks, one for each number.
  • the ablation could be performed using a mask projection technique, but can be performed by direct beam writing.
  • the resist can be any suitable resist, for instance a plastics (polymer) resist.
  • the thickness of the resist layer may for instance be not less than about 0.5 micron and/or not more than about 1 micron.
  • the plasma etching should be to a depth of not less than about 10 nm and/or not greater than about 70 nm, more preferably not less than about 20 nm and/or not greater than about 50 nm, a suitable value being about 30 nm.
  • the diamond exposed by the mask can be etched using a broad ion beam to convert it to graphite or other non-diamond carbon which may then be removed by, for example, acid cleaning.
  • a diamond gemstone is mounted on a holder (or a plurality of diamond gemstones can be so mounted).
  • a layer of non-conducting polymer plasma etch resist is applied to the exposed surface of the diamond, for instance by spin coating using e.g. a Novalac photoresist or by evaporation.
  • the resist layer is 0.5 to 1 microns thick.
  • a layer of gold about 0.1 microns thick is deposited on the resist layer on at least part of the facet to be marked.
  • the resist and gold layers are patterned by laser ablation with about 10 pulses to leave a clean diamond surface
  • the laser wavelength is selected to give the best results with the chosen resist, shorter wavelengths permitting greater resolution than longer ones 248 nm or other wavelengths may be used, but the preferred wavelength is 193 nm
  • an electrical connection is made to the metal layer and the diamond is plasma etched in a standard manner, preferably under a partial pressure of oxygen Zones of the facet not protected by the resist are etched to a depth of about 30 nm, providing a clean etch with no evidence of blackening
  • the electrical connection to the metal layer prevents charging
  • the stone or stones is/are removed from the holder
  • the mask is removed by wet cleaning
  • the apparatus used for the laser ablation can be similar to that shown in Figure 2 of WO 97/03846

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Peptides Or Proteins (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Adornments (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

In order to provide an invisible information mark on a facet of a diamond gemstone, a plasma resist is applied to the whole of the exposed surface of the gemstone, a layer of gold is applied to the facet in the region where the mark is to be formed, a selected zone of the metal and resist layers is ablated by ultraviolet laser ablation to form a mask on the facet, an electrical connection is provided to the metal layer, and the facet is plasma etched through the mask in order to apply a mark of appropriate depth, the resist and metal layers subsequently being removed.

Description

Marking Diamond
Background to the Invention
The present invention relates to a method of marking a surface of a diamond to produce a mark which is invisible to the naked eye. The mark may be any mark, but the invention is particularly though not exclusively directed to applying an information mark to the diamond. The diamond may be for instance an industrial diamond such as a wire-drawing die, though the invention is of particular interest in marking gemstone diamonds, for instance for applying a mark which is invisible to the naked eye or invisible to the eye using a xlO loupe, when the mark can be applied to a polished facet of the gemstone without detracting from its clarity or colour grade. When a loupe is used, the visibility is assessed under the internationally accepted conditions for clarity grading, i.e. using a lOx magnifying achromatic, aplanatic loupe under normal light, this being a white diffuse light, not a spot light. The marks can be used to uniquely identify the gemstone by a serial number or as a brand or quality mark. In general, the mark should be capable of being viewed under suitable magnification and viewing conditions, and, if applied to a gemstone, should not detract from the value or appearance of the stone and should preferably not exhibit blackening.
There is a detailed description of the nature of the marks that can be applied in WO97/03846, in which the marks are applied by irradiating a diamond gemstone with ultraviolet laser radiation using a projection mask.
It is generally desirable to produce marks of improved resolution and to reduce the time required to apply the marks so that for instance serial numbers can be applied using an assembly or sequence of masks. The Invention
According to the invention, a layer of resist is applied to the surface of the diamond, a selected zone of the resist layer is ablated to form a mask on the diamond surface, and the diamond surface is etched through the mask, wherein an electrically-conducting layer is applied to the resist layer, and an electrical connection is provided to the electrically-conducting layer to prevent charging during etching. The invention extends to a diamond whose surface has been marked by the method, and to apparatus for carrying out the method.
The preferred form of etching is plasma etching. For plasma etching, it is especially advantageous to have an electrically-conducting layer, for example metal, and provide an electrical connection to the layer, to prevent charging of the diamond, the resist can then be non-electrically-conducting. The layer of metal can for instance be a layer of gold, for instance about 0.1 microns thick. It need not be applied to the whole of the resist layer, only to a region sufficiently large to prevent charging during plasma etching. The bilayer mask so formed may require different ablation conditions to a single layer, but generally both layers are ablated substantially simultaneously. It is found that the electrically-conducting layer effectively remains on the resist around the ablated zone, and thus prevents charging during plasma etching, whilst leaving the ablated zone clear of metal. The metal should have an ablation threshold no higher than that of the resist. A metal such as gold cannot be used on its own as a resist because it does not give high enough resolution, ablating too readily and leaving poorly defined edges. Furthermore, if a thicker layer of metal such as gold is used, there is a risk of the metal sputtering and redepositing in the ablated zone.
A completely dry technique can be used (with no chemical etching or stripping steps); although wet cleaning may be required after plasma etching in order to remove the mask, this is not a critical step requiring controlled conditions. The bilayer mask can provide greatly improved resolution (particularly in relation to the laser etching technique disclosed in WO97/03846), and, in comparison with WO97/03846, requires a reduced pulse count if laser ablation is employed, for instance using about 20 pulses or fewer, say 10 pulses, rather than 500 pulses, making it practical to produce serial numbers with a sequence of masks, one for each number. The ablation could be performed using a mask projection technique, but can be performed by direct beam writing.
The resist can be any suitable resist, for instance a plastics (polymer) resist. The thickness of the resist layer may for instance be not less than about 0.5 micron and/or not more than about 1 micron.
In general, it is preferred that the plasma etching should be to a depth of not less than about 10 nm and/or not greater than about 70 nm, more preferably not less than about 20 nm and/or not greater than about 50 nm, a suitable value being about 30 nm.
As an alternative to plasma etching, the diamond exposed by the mask can be etched using a broad ion beam to convert it to graphite or other non-diamond carbon which may then be removed by, for example, acid cleaning.
Example
A diamond gemstone is mounted on a holder (or a plurality of diamond gemstones can be so mounted). A layer of non-conducting polymer plasma etch resist is applied to the exposed surface of the diamond, for instance by spin coating using e.g. a Novalac photoresist or by evaporation. The resist layer is 0.5 to 1 microns thick.
A layer of gold about 0.1 microns thick is deposited on the resist layer on at least part of the facet to be marked. The resist and gold layers are patterned by laser ablation with about 10 pulses to leave a clean diamond surface The laser wavelength is selected to give the best results with the chosen resist, shorter wavelengths permitting greater resolution than longer ones 248 nm or other wavelengths may be used, but the preferred wavelength is 193 nm
Using the holder, an electrical connection is made to the metal layer and the diamond is plasma etched in a standard manner, preferably under a partial pressure of oxygen Zones of the facet not protected by the resist are etched to a depth of about 30 nm, providing a clean etch with no evidence of blackening The electrical connection to the metal layer prevents charging
The stone or stones is/are removed from the holder The mask is removed by wet cleaning
The apparatus used for the laser ablation can be similar to that shown in Figure 2 of WO 97/03846
The present invention has been described above purely by way of example, and modifications can be made within the spirit of the invention The invention also consists in any individual features described or implicit herein or any combination of any such features or any generalisation of any such features or combination

Claims

CLAIMS:
1. A method of marking a surface of a diamond to produce a mark thereon which is invisible to the naked eye, the method comprising: applying to said surface a layer of resist; ablating a selected zone of the resist layer to form a mask on the diamond surface; and etching the diamond surface through the mask in order to mark the diamond surface; wherein an electrically-conducting layer is applied to said resist layer, and an electrical connection is provided to the electrically-conducting layer to prevent charging during etching.
2. The method of Claim 1, wherein the thickness of the resist layer is about 0.5 to 1 microns.
3. The method of Claim 1 or Claim 2, wherein the electrically-conducting layer is metal.
4. The method of any preceding Claim, wherein the resist layer is non-electrically- conductiηg.
5. The method of any of the preceding Claims, wherein the thickness of the electrically-conducting layer is about 0.1 microns.
6. The method of any of the preceding Claims, wherein the selected zone of the layer is ablated using laser ablation.
7. The method of Claim 6, wherein about 20 pulses or fewer are used for the laser ablation. 8 The method of any of the preceding Claims, wherein the diamond surface is etched to a depth of about 15 to about 70 nm
9 The method of any of the preceding Claims, wherein the diamond surface is etched to a depth of about 20 to about 50 nm
10 The method of any of the preceding Claims, wherein the diamond surface is etched by plasma etching
11 The method of any of Claims 1 to 9, wherein the diamond surface is etched using a broad ion beam
12 The method of any of the preceding Claims, wherein an information mark is applied to the diamond
13 The method of Claim 1, wherein the mark applied is invisible to the eye using a xlO loupe
14 The method of any of the preceding Claims, wherein the diamond is a gemstone
15 The method of Claim 14, wherein the mark is applied to a polished facet of the gemstone
16 A method of marking a surface of a gemstone, substantially as herein described in the foregoing Example
17 A diamond whose surface has been marked by the method of any of the preceding Claims
PCT/GB1998/001493 1997-05-23 1998-05-22 Marking diamond Ceased WO1998052773A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP55014198A JP2001526571A (en) 1997-05-23 1998-05-22 Marking diamonds
GB9927676A GB2339726B (en) 1997-05-23 1998-05-22 Marking diamond
HK00104772.6A HK1025544B (en) 1997-05-23 1998-05-22 Marking diamond
EP98922948A EP0983152B1 (en) 1997-05-23 1998-05-22 Marking diamond
AT98922948T ATE216322T1 (en) 1997-05-23 1998-05-22 DIAMOND MARKING PROCESS
US09/423,350 US6358427B1 (en) 1997-05-23 1998-05-22 Marking diamond
DE69804957T DE69804957T2 (en) 1997-05-23 1998-05-22 DIAMANTMARKIERVERFAHREN
AU75408/98A AU728923B2 (en) 1997-05-23 1998-05-22 Marking diamond
CA002291042A CA2291042A1 (en) 1997-05-23 1998-05-22 Marking diamond

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9710736.1 1997-05-23
GB9710736A GB2325439A (en) 1997-05-23 1997-05-23 Marking diamond gemstone by plasma or ion beam etching through a laser ablated resist

Publications (1)

Publication Number Publication Date
WO1998052773A1 true WO1998052773A1 (en) 1998-11-26

Family

ID=10812995

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1998/001493 Ceased WO1998052773A1 (en) 1997-05-23 1998-05-22 Marking diamond

Country Status (16)

Country Link
US (1) US6358427B1 (en)
EP (1) EP0983152B1 (en)
JP (1) JP2001526571A (en)
KR (1) KR20010012915A (en)
CN (1) CN1140421C (en)
AT (1) ATE216322T1 (en)
AU (1) AU728923B2 (en)
CA (1) CA2291042A1 (en)
DE (1) DE69804957T2 (en)
ES (1) ES2174438T3 (en)
GB (2) GB2325439A (en)
IL (1) IL124591A (en)
RU (1) RU2198099C2 (en)
TW (1) TW388736B (en)
WO (1) WO1998052773A1 (en)
ZA (1) ZA984375B (en)

Cited By (1)

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WO2002066262A2 (en) 2001-02-16 2002-08-29 Gersan Establishment Forming a mark on a gemstone or industrial diamond

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US20080316171A1 (en) * 2000-01-14 2008-12-25 Immersion Corporation Low-Cost Haptic Mouse Implementations
US6593543B2 (en) * 2000-07-20 2003-07-15 David Benderly Gemstone marking system and method
US6624385B2 (en) * 2001-12-21 2003-09-23 Eastman Kodak Company Method for marking gemstones with a unique micro discrete indicia
DE10310293A1 (en) * 2003-03-10 2004-09-23 Robert Bosch Gmbh Laser drilling or machining method using electrical field for removal of metal and/or plasma ions from machining point
WO2005061400A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in cvd diamond
US20060144821A1 (en) * 2005-01-04 2006-07-06 Academia Sinica Method for engraving irreproducible pattern on the surface of a diamond
RU2357870C1 (en) * 2005-08-22 2009-06-10 Интернейшнел Джемстоун Реджистри Инк. Method and system for laser marking precious stones, such as diamonds
EA016643B1 (en) * 2007-07-27 2012-06-29 Юрий Константинович НИЗИЕНКО Method for marking valuable articles
RU2427041C2 (en) * 2009-05-08 2011-08-20 Юрий Константинович Низиенко Method of making identification mark for marking valuable articles and valuable article with said mark
CN102569506B (en) * 2011-12-29 2014-06-18 广东爱康太阳能科技有限公司 Method for preparing metal electrode of solar battery from silane mask
RU2557360C2 (en) * 2012-12-20 2015-07-20 Общество с ограниченной ответственностью "Си Эн Эл Девайсез" Formation of mask for diamond films etching
SG11201509479WA (en) * 2013-05-30 2015-12-30 Goldway Technology Ltd Method of marking material and system therefore, and material marked according to same method
HK1198858A2 (en) * 2014-04-16 2015-06-12 Master Dynamic Limited Method of marking a solid state material, and solid state materials marked according to such a method
TWI814173B (en) * 2020-12-14 2023-09-01 香港商金展科技有限公司 A method and system of forming an identifiable marking at an outer surface of a plurality of gemstones, and gemstones marked according to such a method
US11886122B2 (en) 2021-06-24 2024-01-30 Fraunhofer Usa, Inc. Deep etching substrates using a bi-layer etch mask

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WO1997003846A1 (en) * 1995-07-17 1997-02-06 Gersan Establishment Marking diamond

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US4425769A (en) * 1981-05-07 1984-01-17 Maurice Hakoune Method for treating a gem and gem treated with this method
US5137799A (en) * 1989-02-06 1992-08-11 Hoechst Aktiengesellschaft Electrically conductive resist material, a process for its preparation and its use
EP0449439A1 (en) * 1990-03-13 1991-10-02 Fujitsu Limited Process for formation of resist patterns
WO1997003846A1 (en) * 1995-07-17 1997-02-06 Gersan Establishment Marking diamond

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002066262A2 (en) 2001-02-16 2002-08-29 Gersan Establishment Forming a mark on a gemstone or industrial diamond
WO2002066263A2 (en) 2001-02-16 2002-08-29 Gersan Establishment Mounting and preparing a gemstone or industrial diamond for the formation of a mark on the surface thereof
WO2002066262A3 (en) * 2001-02-16 2003-06-26 Gersan Ets Forming a mark on a gemstone or industrial diamond
GB2389340A (en) * 2001-02-16 2003-12-10 Gersan Ets Forming a mark on a gemstone or industrial diamond
GB2389340B (en) * 2001-02-16 2004-08-18 Gersan Ets Forming a mark on a gemstone or industrial diamond
KR100896783B1 (en) 2001-02-16 2009-05-11 게르잔 에스테블리쉬먼트 Marking method and apparatus for jewelry or industrial diamond

Also Published As

Publication number Publication date
AU728923B2 (en) 2001-01-18
GB2325439A (en) 1998-11-25
HK1025544A1 (en) 2000-11-17
US6358427B1 (en) 2002-03-19
CA2291042A1 (en) 1998-11-26
ES2174438T3 (en) 2002-11-01
CN1264341A (en) 2000-08-23
GB9710736D0 (en) 1997-07-16
GB2339726A (en) 2000-02-09
DE69804957T2 (en) 2002-10-17
RU2198099C2 (en) 2003-02-10
KR20010012915A (en) 2001-02-26
TW388736B (en) 2000-05-01
EP0983152A1 (en) 2000-03-08
CN1140421C (en) 2004-03-03
JP2001526571A (en) 2001-12-18
DE69804957D1 (en) 2002-05-23
AU7540898A (en) 1998-12-11
GB2339726B (en) 2001-09-12
GB9927676D0 (en) 2000-01-19
IL124591A (en) 2001-10-31
ATE216322T1 (en) 2002-05-15
ZA984375B (en) 1999-11-22
IL124591A0 (en) 1998-12-06
EP0983152B1 (en) 2002-04-17

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