WO2000016443A1 - Non-circular micro-via - Google Patents

Non-circular micro-via Download PDF

Info

Publication number
WO2000016443A1
WO2000016443A1 PCT/US1999/020418 US9920418W WO0016443A1 WO 2000016443 A1 WO2000016443 A1 WO 2000016443A1 US 9920418 W US9920418 W US 9920418W WO 0016443 A1 WO0016443 A1 WO 0016443A1
Authority
WO
WIPO (PCT)
Prior art keywords
printed circuit
circuit board
trench
trace
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/020418
Other languages
French (fr)
Inventor
Martin A. Cotton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viasystems Group Inc
Original Assignee
Viasystems Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to HK02101572.2A priority Critical patent/HK1042780B/en
Priority to JP2000570871A priority patent/JP2002525854A/en
Priority to AU58120/99A priority patent/AU5812099A/en
Priority to BR9913588-4A priority patent/BR9913588A/en
Priority to KR1020017002973A priority patent/KR20010086372A/en
Priority to CA002343445A priority patent/CA2343445A1/en
Priority to IL14182699A priority patent/IL141826A0/en
Priority to US09/786,787 priority patent/US6713685B1/en
Priority to EA200100329A priority patent/EA003157B1/en
Priority to EP99945538A priority patent/EP1127387B1/en
Application filed by Viasystems Group Inc filed Critical Viasystems Group Inc
Priority to DE69934814T priority patent/DE69934814T2/en
Publication of WO2000016443A1 publication Critical patent/WO2000016443A1/en
Priority to NO20011219A priority patent/NO20011219L/en
Anticipated expiration legal-status Critical
Priority to US11/825,169 priority patent/US20080173476A1/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0219Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
    • H05K1/0221Coaxially shielded signal lines comprising a continuous shielding layer partially or wholly surrounding the signal lines
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/115Via connections; Lands around holes or via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09036Recesses or grooves in insulating substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/0929Conductive planes
    • H05K2201/09354Ground conductor along edge of main surface
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09509Blind vias, i.e. vias having one side closed
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09854Hole or via having special cross-section, e.g. elliptical
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09981Metallised walls
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0041Etching of the substrate by chemical or physical means by plasma etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons

Definitions

  • This invention relates to Printed Circuit Boards (PCBs) and particularly
  • micro-via plated through hole interconnect and shielding structures for PCBs and the method for creating such micro-vias and shielding structures.
  • the interconnect medium between layers are created by drilling with mechanical drill through the layers of the PCB
  • Drilling holes through laminate causes a round or circular hole to be created. Drilling of holes is
  • a drilling machine that drills using a "drill", a mechanical device that rotates or cuts around its centerline cutting away material about the centerline to create the round or circular holes.
  • the action of a drill is one of
  • micro vias are typically of a blind nature.
  • vias are vias that do not pass completely through the PCB, but stop at some
  • Material ablation is an electrochemical reaction to either laser light pulsing or the plasma process. It
  • This ablated round hole is often described as "drilling" because of removal of material about a centerline, hence the term,
  • Micro via drilling This round hole has performance level based around the creation of a round or circular shape hole, namely, current carrying capacity, resistance and inductance.
  • a blind via has a lower inductance
  • carrying capacity of a via is dependent on the circumferencial length and the
  • Circular vias may be a limiting feature if the via is to avoid traces or components when extending
  • the inductance characteristic tends to slow down signal speed and increase noise susceptibility.
  • This through hole embodiment is where one conductive layer
  • the semi-conductor via technology has a different
  • the process of forming the via is different from a process where material is cut away about a centerline and there is no plating structure.
  • the through-hole is filled with a
  • micro vias for printed circuit boards interconnect a plurality of circuit trace terminal lands or pads by transcending through and exposing them to an interior
  • the semiconductor through hole structure is that of
  • a via is not the objective in the semiconductor environment as it is with printed circuit board vias.
  • circuit boards the issue with vias is the density of the interconnections as it relates to current carrying capacity and better voltage drop.
  • the invention thus has as an object to provide additional current
  • object of this invention to provide vias that can physically avoid traces and components for densely populated multiple trace multi-layer boards. It is also
  • the invention satisfies the above objects by providing a non-circular via and a method for cutting away material about a centerline for a non-circular via for PCBs.
  • the method of drilling the non-circular via will be by cutting or
  • ablation or plasma ablation This type of cutting away of material about a centerline is sometimes referred to as ablation of material as noted above and allows lateral movement to effect noncircular patterns.
  • This invention utilizes this noncircular approach in three forms, convoluted circle or a square, an extended elongated via up to three times the diameter in depth and a trenched
  • the convoluted circle or non-circular via is a Profile Power Micro-via.
  • the Profile via has any shape other than round or circular to create an
  • the Profile via can have a non-circular wave form shape centered on the circumference or pitch circle diameter or an irregular shape that is not based on the round or
  • a Three Diameter via or a 1-3D via is a through hole having two component dimensions were one is the major dimension of 1-3D length and
  • micro milled trench forming a co-axialised structure is used for noise protection EMI protection and is typically elongated longer than 3 times the
  • FIG. 1 shows a top view of a typical
  • Fig. 3 shows an alternate Profile-1 forming
  • Fig. 4 shows an alternate Profile-2 forming a "U” shaped micro via.
  • Fig. 5 shows an alternate Profile-3 forming a double cross
  • micro via that is not based on the round circular format or were the shape is
  • FIG. 6 shows
  • Fig. 7 and Fig. 8 shows the Manhattan
  • Fig. 9 and Fig. 10 shows an alternate guard trench.
  • Fig. 11 and Fig. 12 shows a double guard trench.
  • circular via can take on an "L" shaped cross section to connect two circuit trace lands or terminal pads on separate circuit board layers while avoiding traces
  • circumference of a circle is less than some shapes with equivalent overall
  • the increased circumference makes utilization of non-circular vias beneficial because the increased circumference of no-circular vias increases the current carrying capacity of the via.
  • plated through hole methods can be adapted to be utilized to create a perimeter ground plane trench or an outer shield trench , by using a micro milled trench around the perimeter of a PCB or the
  • perimeter surrounding a component or a set of components can provide an adequate grounding path for ground traces on multiple layers of the PCB and for multiple components positioned at various locations on the PCB or can be utilized for EMI protection. This technique is useful to conform with the
  • the plated trench can extend through several PCB layers and can follow along the board edge regardless of the shape of the board.
  • the trench structure can
  • the trench provides
  • EMI protection because it creates a coaxialised track structure. If a single trench is used it forms a partial outer shield for the coaxialised structure.
  • partial outer shield of he coaxialised structure comprises the plating of the wall of the trench, the ground plane, and the plating lip that laterally extends from the rim about the opening of the trench.
  • the plating wraps around the rim of
  • the coaxialised structure is completed by the circuit trace co-axially extending
  • grounding layer usually requires isolation on either side by
  • Another method is to utilize a grounding strip or grounding bar bonded between layers of PCBs or Bonded to the edge of a PCB. This requires a much more difficult manufacturing process and the grounding strip is more difficult to make it accessible to all the circuit traces on all of the layers
  • Micro Features for this invention. These three ideas are categorized as Profile Power Micro via, 1 D-3D Vias and the Guard Trench
  • micro via of equivalent maximum diametric dimension As the current carrying capacity of any via is dependent on the circumference wall length and the
  • Profile Power micro vias for the purposes of this patent application are vias that have a circumference or via edge that is longer or
  • the shape of the via When used for regular interconnect via creation the shape of the via has as its major dimension the equivalent diameter of the normal circular micro via.
  • the Profile Power micro via can be any via that has any shape other
  • the shape can for example be star, cross,
  • micro vias are based on a circular format in that they can have a wave form shape centered on the circumference or pitch circle diameter, however the power micro via can be an irregular shape that is not based on the round or circular format. That is, the shape of the micro-via cross section can have an irregular shape that is not based on a round circumferencial maximum
  • micro-via can also be a convoluted stepped square pattern.
  • the non-circular shape can allow more traces on a given layer to connect to a single via in order to connect to traces on other layers. This is
  • the 1 D-3D via is an alternate form of the power profile micro via. If the
  • the vias mentioned here are all via configurations that use a single diameter as the base dimensioning for a via of two component dimensions.
  • one of the dimensions is the length 202 and the other is the breadth or width 200.
  • the length can be in
  • a via having a round or circular shape ratio of 1.0 : 1.0 is to be considered a normal micro via and is not subject to this patent application.
  • the length is restricted to 3D or three times the length
  • Photo resist requires a certain minimum area of resist to adhere to the copper surface.
  • the small vias are imaged using a small area of resist. If we assume that normal micro vias have a ratio of 1.0 : 1.0, then we can assume that any via of a greater ratio than 1.0 in one of the two dimensions will have a greater area of photo resist to adhere to the copper or other conductive imageable medium, thereby improving yield.
  • micro milled trenched is a third form for using the micro via concept
  • Trenching is a slot that is "micro milled" using plasma or laser processing or other method if removing
  • Trenching is similar to the 1 D-3D via formats shown previously.
  • Trenching can be used for EMC screening but
  • This trenching can be used on the edge of PCB's or within the area of the
  • Trenching can be used in all PCB or application specific module types. It offers significant signal performance increases, but at a potentially lower
  • a power profile non-circular cross section micro via 102 can be seen
  • micro via 104 compared to a standard prior art round or circular cross section micro via 104.
  • the maximum or major diameter 100 for the non-circular or "cross" shaped micro via is equivalent to the standard prior art circular via. This is descriptive
  • the cross-shaped micro via is seen again. What is defined as the width 200 and the length 202 of the micro via is shown.
  • the width 200 of the micro via is
  • the second length 204 defined as the translation distance of the centerline of
  • the cutting means about which it cuts.
  • cross" or "++" and an "E" shaped micro via are shown respectively and they are not based on the round or circular format in that the have a major
  • Fig. 6A shows a square micro via having a breadth 604
  • the 1 D-3D micro via format as discussed earlier is shown.
  • the 1 D micro via 700 is representative of a standard micro via having
  • the 2D micro via 702 has a minor diameter of
  • the 3D micro via 708 has a minor diameter 710 and a greater length major diameter 712 where the major diameter is three times the diameter of the minor diameter.
  • a means of utilizing the 2D-3D micro via format can be seen by referring to Fig. 8 which
  • round terminal pad or interconnect land Round terminal pads and round vias can limit trace and interconnect density. If the Manhattan configuration is used in design to realize a higher density interconnect with the same or increased current carrying capacity, then an advantage over normal micro via design and manufacturer is attained.
  • a second embodiment 802 of the Manhattan strategy 802 is shown where the circuit trace slightly widens to
  • FIG. 9 shows a top view of a corner section of a printed circuit board 900 where a
  • plated trench 902 is shown extended about the perimeter of the board. In this
  • the trenched via is actually one elongated trenched via aligned along the board edge, however the trench could be a series of aligned trench segments (not shown). Also this example shows an EMC sensitive
  • the trace 904 is shown as segmented because it is
  • the plated trench via is created by milling a series of elongated trenched through holes
  • grounding plane 1000 (Ref. to Fig. 10).
  • the grounding plane 1000 could be any grounding plane 1000.
  • the grounding plane 1000 could be any grounding plane 1000.
  • reference plane fixed at a given potential level.
  • the reference plane potential level is fixed at ground.
  • the ground potential level could be a TTL Logic ground or some other signal
  • the trench perimeter is preferably a continuous trench.
  • the interior walls 1002 of the elongated through holes and the edges 1004 about the mouth of the holes are then
  • guard trench plated with a continuous layer of conductive material 1006 there through thereby providing a path to ground.
  • the plating wraps around the rim of the opening of the trench and laterally extends from the opening along the edge
  • This embodiment comprises an inner 1100 and
  • the trace is shown as segmented because it is hidden
  • the double guard trenching provides a continuous and complete outer shield surrounding the EMC sensitive track because of the joining lip structure 1201 of the double trenches.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Structure Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Multi-Conductor Connections (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Laminated Bodies (AREA)

Abstract

Non-circular micro-vias (102) for printed circuit boards are disclosed and a method of making them.

Description

Non-Circular Micro-Via
Technical Field
This invention relates to Printed Circuit Boards (PCBs) and particularly
to micro-via plated through hole interconnect and shielding structures for PCBs and the method for creating such micro-vias and shielding structures.
Background Art
It is always the goal in PCB design to increase the functionality and
component capacity. Almost since the inception of PCB's, engineers have striven to add more and more functionality and hence more interconnect
traces. These traces go from side to side and from layer to layer and in this way form the interconnect between the "active" electronic elements. The PCB
has throughout its lifetime been made from many alternate materials and
processes. The most common material being a glass epoxy based laminate,
with the PCB builds being of a single sided, double sided or a multilayered
(more than 2 layers) configuration. The interconnect medium between layers are created by drilling with mechanical drill through the layers of the PCB
exposing the copper interconnect lands on the individual layers. The PCB is then passed through a plating solution and the various layers are connected by plated or deposited copper formed on the interior surface of the drilled through hole. This drilled plated barrel of inter layer interconnect is called a "via". The most obvious physical attribute is that the via is round when viewed
from the top or bottom side. This is caused by "drilling". Drilling holes through laminate causes a round or circular hole to be created. Drilling of holes is
carried out on a drilling machine that drills using a "drill", a mechanical device that rotates or cuts around its centerline cutting away material about the centerline to create the round or circular holes. The action of a drill is one of
cutting.
As mentioned previously more and more interconnect traces have been required as circuit and hence PCB complexity increased. This of course has
led to a decrease in size of the vias and an increase in their number. The new smaller vias are called "micro vias" and are typically of a blind nature. Blind
vias are vias that do not pass completely through the PCB, but stop at some
predetermined layer depth. The smaller via size is required due to an increase
in trace density which reduces the points on a given layer where a terminal interconnect land can be positioned such that it aligns with a land on another
layer without interference with traces there between. If cross-sectional real
estate that a via occupies is reduced, the ability to utilize a via is more likely. However, the decrease in via size has meant that the mechanical drilling of micro vias is almost commercially extinct. Several alternate processes have
sprung up namely laser ablation and plasma ablation. Material ablation is an electrochemical reaction to either laser light pulsing or the plasma process. It
is not a cutting action or process. However, ablation in like manner removes away material around a centerline.
Ablation emulates mechanical drilling by creating a basically circular
hole whichever method is used. This ablated round hole is often described as "drilling" because of removal of material about a centerline, hence the term,
Micro via drilling. This round hole has performance level based around the creation of a round or circular shape hole, namely, current carrying capacity, resistance and inductance. For example, a blind via has a lower inductance
than a through hole because it has shorter length to the barrel of the via, but its current carrying capacity does not alter because the diameter and hence the circumference of the hole remains the same. Therefore, the current
carrying capacity of a via is dependent on the circumferencial length and the
conducting medium thickness at the point of interconnection between the trace
land and the via.
There are several problems with the conventional circular profile micro-
via. For example, when densely populated multi-layer PCBs are utilized there are an enormous amount of traces and interconnects. Circular vias may be a limiting feature if the via is to avoid traces or components when extending
through multiple layers because of the cutting area required for a circular hole. Also, the current carrying capacity of circular vias are limited because current carrying capacity of a via is a factor of circumference and thickness of the
plating applied to the inner wall. This factor also effects the ability to have
multiple traces on a single layer to connect up to the same via because the distance between the contact points are too short thus exceeding the current
carrying capacity of the via at those points or the interconnect density at a given land or PCB layer. Conventional standard circular profile micro vias also
have a characteristic inductance property due to the spiral nature of the
circular via which effects the electron flow through the via resulting in an inductance. The inductance characteristic tends to slow down signal speed and increase noise susceptibility.
Through holes that can possibly be categorized as a Micro-via have
been utilized on non-organic silicone based semi-conductor devices to connect two conductive layers separated by an insulation layer where the insulation
layer has a contact through hole which exposes a portion of the two conductive
surfaces. This through hole embodiment is where one conductive layer
continuously extends down through the through-hole thereby electrically connecting the two layers. The semi-conductor via technology has a different
purpose and hence a different structure, however it is worth mentioning when
discussing via technology (electrical interconnection utilizing a through hole) for completeness. With a semiconductor via the first conductive layer actually conforms to the walls of the through hole and continues over the exposed area
of the second layer and in continuous contact with said second layer forming what may be described as a blind via. However the process of forming the via is different from a process where material is cut away about a centerline and there is no plating structure.
In this semi-conductor example the through-hole is filled with a
continuation of a first conductive layer of the semi-conductor into the through hole. The through hole structure utilized for semiconductor designs differs from through holes or micro vias utilized for printed circuit boards. First, micro vias for printed circuit boards interconnect a plurality of circuit trace terminal lands or pads by transcending through and exposing them to an interior
conductive plating, whereas the semiconductor through hole structure is that of
a hole through an insulation layer that separates two layers of conductive media. The interconnection is established by continuously extending one
conductive media layer through the through hole establishing contact with the
second layer. Establishing a plurality of interconnections to a node created by
a via is not the objective in the semiconductor environment as it is with printed circuit board vias.
The specific issue with regard to semi conductor vias is electrical failure of the via structure due to thermal and other stresses particularly in the area around the rim of the opening of the through hole. This is where the conductive media layer begins to extend through the through hole and failures
occur because it is at this point that the media layer tends to be thinner. The problem is concentration of stresses in a small area. Whereas, with printed
circuit boards the issue with vias is the density of the interconnections as it relates to current carrying capacity and better voltage drop.
Disclosure of the Invention
It is in view of the above problems that the present invention was developed.
The invention thus has as an object to provide additional current
carrying capacity for a via and reduce its inductance characteristic. It is also
object of this invention to provide vias that can physically avoid traces and components for densely populated multiple trace multi-layer boards. It is also
an object of this invention to connect traces on two or more layers that are not
vertically in line. It is also the object of this invention to reduce inductance of
the via.
The invention satisfies the above objects by providing a non-circular via and a method for cutting away material about a centerline for a non-circular via for PCBs. The method of drilling the non-circular via will be by cutting or
removing material away about a centerline with a process such as laser
ablation or plasma ablation. This type of cutting away of material about a centerline is sometimes referred to as ablation of material as noted above and allows lateral movement to effect noncircular patterns. This invention utilizes this noncircular approach in three forms, convoluted circle or a square, an extended elongated via up to three times the diameter in depth and a trenched
via. The convoluted circle or non-circular via is a Profile Power Micro-via. The Profile via has any shape other than round or circular to create an
increased length in circumference over a round or circular format. The Profile via can have a non-circular wave form shape centered on the circumference or pitch circle diameter or an irregular shape that is not based on the round or
circular form. A Three Diameter via or a 1-3D via is a through hole having two component dimensions were one is the major dimension of 1-3D length and
the other minor dimension is its breadth having a 1 D diameter. Finally, a
micro milled trench forming a co-axialised structure is used for noise protection EMI protection and is typically elongated longer than 3 times the
diameter of the standard circular Micro-via.
Brief Description of the Drawings
The advantages of this invention will be better understood by referring
to the accompanying drawing, in which Fig. 1 shows a top view of a typical
profile of power micro-via forming a cross along with a conventional via. Fig.
2 shows the definition of the length and width of a via in a top exterior view
using a cross or "+" shaped via. Fig. 3 shows an alternate Profile-1 forming
an elbow or "L" shaped via. Fig. 4 shows an alternate Profile-2 forming a "U" shaped micro via. Fig. 5 shows an alternate Profile-3 forming a double cross
micro via that is not based on the round circular format or were the shape is
not centered on the circumference or pitch of the circle diameter. Fig. 6 shows
an alternate Profile-4 forming an "E" shaped micro via that is not based on the round circular format or were the shape is not centered on the circumference
or pitch of the circle diameter. Fig. 7 and Fig. 8 shows the Manhattan
Interconnect Strategy. Fig. 9 and Fig. 10 shows an alternate guard trench.
Fig. 11 and Fig. 12 shows a double guard trench.
Best Mode of Carrying Out the Invention
The inventor has discovered that non-circular vias are feasible for
printed circuit boards and are desirable for many reasons. For example a non-
circular via can take on an "L" shaped cross section to connect two circuit trace lands or terminal pads on separate circuit board layers while avoiding traces
within the region between the legs of the "L" shaped via on layers there
between. Other non-circular vias may be used in different ways to adapt to the
specific circuit trace layout. It is also desirable to design Vias that are non- circular but are of equivalent overall diameter to comparable standard circular vias because they require less cutting area. This is because, the
circumference of a circle is less than some shapes with equivalent overall
diameter. The increased circumference makes utilization of non-circular vias beneficial because the increased circumference of no-circular vias increases the current carrying capacity of the via.
In addition it is found that plated through hole methods can be adapted to be utilized to create a perimeter ground plane trench or an outer shield trench , by using a micro milled trench around the perimeter of a PCB or the
perimeter surrounding a component or a set of components and can provide an adequate grounding path for ground traces on multiple layers of the PCB and for multiple components positioned at various locations on the PCB or can be utilized for EMI protection. This technique is useful to conform with the
available space of densely populated PCBs and uniquely shaped PCBs. The
plated trench can extend through several PCB layers and can follow along the board edge regardless of the shape of the board. The trench structure can
also encircle a certain area of the printed circuit board for EMI protection of that specific area of the board or a specific component. The trench provides
EMI protection because it creates a coaxialised track structure. If a single trench is used it forms a partial outer shield for the coaxialised structure. The
partial outer shield of he coaxialised structure comprises the plating of the wall of the trench, the ground plane, and the plating lip that laterally extends from the rim about the opening of the trench. The plating wraps around the rim of
the opening of the trench and laterally extends from the opening forming a lip. The coaxialised structure is completed by the circuit trace co-axially extending
through the outer shield formed by the trench. Current grounding schemes may dedicate entire layers to a grounding plane which unnecessarily increases the thickness and weight of the Board
and such a grounding layer usually requires isolation on either side by
insulation layers. Another method is to utilize a grounding strip or grounding bar bonded between layers of PCBs or Bonded to the edge of a PCB. This requires a much more difficult manufacturing process and the grounding strip is more difficult to make it accessible to all the circuit traces on all of the layers
of the PCB.
In summary, alternative shape features will alter the performance of a micro via by increasing it over known shape (round) performance, for example
convoluted or square shaped vias. Three ideas form the basis of what is
collectively known as Micro Features, for this invention. These three ideas are categorized as Profile Power Micro via, 1 D-3D Vias and the Guard Trench
and will now be discussed.
Profile Power Micro via
The basic difference in performance for this alternate micro via, is that it has a greater current carrying capacity than the traditional round or circular
micro via of equivalent maximum diametric dimension. As the current carrying capacity of any via is dependent on the circumference wall length and the
conducting medium wall thickness, it follows that a larger via (hole) will have a larger or longer circumference than a smaller counterpart. It is therefore the
conclusion that the larger circumference (assuming the same conductive medium thickness) will have a greater amount of conducting medium in which to carry current. Profile Power micro vias for the purposes of this patent application are vias that have a circumference or via edge that is longer or
larger than can be obtained by using a "round or circular" shape of equivalent maximum diameter in the design, imaging or manufacturing of micro vias.
When used for regular interconnect via creation the shape of the via has as its major dimension the equivalent diameter of the normal circular micro via.
When used for a pure "Power configuration" the normal via max
dimension need not apply. In this way the vias can be used in all power and
interconnect strategies in PCB design and manufacture. The following are a few examples of the usage of the vias in a power interconnect strategy
unrestricted by size constraints.
The Profile Power micro via can be any via that has any shape other
than round or circular to create the increased length in circumference over equal diameter circular vias. The shape can for example be star, cross,
square or any irregular or convoluted shape that increases the length of the circumference over a round or circular format. In principle the Profile Power
micro vias are based on a circular format in that they can have a wave form shape centered on the circumference or pitch circle diameter, however the power micro via can be an irregular shape that is not based on the round or circular format. That is, the shape of the micro-via cross section can have an irregular shape that is not based on a round circumferencial maximum
diameter or circular form. The micro-via can also be a convoluted stepped square pattern.
Also, the non-circular shape can allow more traces on a given layer to connect to a single via in order to connect to traces on other layers. This is
possible due to increased current carrying capacity at a given layer because
of the increased circumference thereby increasing the number of possible points of interconnection. In addition noncircular vias allow traces and
components to be avoided more readily. Another important feature is
removal of the inductance characteristic as seen with the standard circular
profile via design by eliminating the coil aspect inherent with circular profile vias. Elimination of inductance results in faster signal performance for highspeed signals because the inductance characteristic of the standard circular
profile vias has the tendency to slow down a signal. Also, better noise
susceptibility performance results from a non-circular format.
1 D-3D Vias
The 1 D-3D via is an alternate form of the power profile micro via. If the
standard or normal "round" micro via is considered as a 1 D via or a via with a
diameter of the ratio 1.0, then the vias mentioned here are all via configurations that use a single diameter as the base dimensioning for a via of two component dimensions. Referring to Figure - 2 one of the dimensions is the length 202 and the other is the breadth or width 200. The length can be in
the X or Y orientation or any orientation on a two dimensional plane. The same applies for the breadth. Therefore, a via having a round or circular shape ratio of 1.0 : 1.0 is to be considered a normal micro via and is not subject to this patent application.
The benefits to the 1 D - 3D shape via configuration are that it can be
directional, using the breadth (the smaller dimension) as the limiting factor for interconnect density. The length is restricted to 3D or three times the length
of the breadth for this patent application. Vias with a ratio of greater than 3D are considered as "Trenching" and is described in the next section. Use of
the 2D and 3D vias being used in a Manhattan configuration is possible, refer to Figs - 7 and 8. This enables a via of sufficient size (current carrying
capacity) to be placed within a circuit trace track without round pads. Round vias and hence round via pads are limiting factors in interconnect density in
PCB design. If we can use this format in design to realize high density interconnect with the same or increased current carrying capacity as normal
vias, then an advantage over normal micro via design and manufacture is attained. As a benefit to the manufacture of PCB's the following can be
achieved at the photo resist stage. Photo resist requires a certain minimum area of resist to adhere to the copper surface. During the manufacture of micro via PCB's the small vias are imaged using a small area of resist. If we assume that normal micro vias have a ratio of 1.0 : 1.0, then we can assume that any via of a greater ratio than 1.0 in one of the two dimensions will have a greater area of photo resist to adhere to the copper or other conductive imageable medium, thereby improving yield.
Trenching
The micro milled trenched is a third form for using the micro via concept
of having a non-circular or round cross section. Trenching is a slot that is "micro milled" using plasma or laser processing or other method if removing
away material about a centerline. This slot is greater in depth than one layer. Trenching is similar to the 1 D-3D via formats shown previously. The
difference between 1 D/3D vias and trenching is length, the vias with a larger
ratio than 3.0 : 1.0 is for this patent called trenching. This does not mean that the two are not interchangeable. There will be instances where the trenching
could possibly be smaller that a ratio of 3D, so this must be taken into consideration for this invention. Trenching can be used for EMC screening but
this technique can be used for all known reference plane or screening
techniques that control signal integrity in laminate interconnect solutions.
This trenching can be used on the edge of PCB's or within the area of the
PCB. Trenching can be used in all PCB or application specific module types. It offers significant signal performance increases, but at a potentially lower
layer count and hence lower production costs. The premise and the details of the various aspects of the invention can
be better understood by referring specifically to the drawing. First, referring to Fig. 1 , a power profile non-circular cross section micro via 102 can be seen
compared to a standard prior art round or circular cross section micro via 104. The maximum or major diameter 100 for the non-circular or "cross" shaped micro via is equivalent to the standard prior art circular via. This is descriptive
of a non-circular micro via having a wave form shape centered on the circumference or pitch circle diameter. It can also be seen that the
circumference of the "cross" or "+" shaped micro via is longer than the
circumference of the standard circular shaped micro via thereby increasing the
current carrying capacity of the via as previously explained. Referring to Fig.
2 the cross-shaped micro via is seen again. What is defined as the width 200 and the length 202 of the micro via is shown. The width 200 of the micro via is
driven by the breadth of the cutting action of the cutting means and the length 202 of the micro via is driven by the translation distance of the cutting means. The second length 204 defined as the translation distance of the centerline of
the cutting means about which it cuts.
Referring to Figs. 3 and 4, an "L" shaped and a "U" shaped micro via
are shown respectively. These alternative cross sections are also based on the round or circular format. However, referring to Figs. 5 and 6, a "double
cross" or "++" and an "E" shaped micro via are shown respectively and they are not based on the round or circular format in that the have a major
diameter, 500 and 600 respectively, and a smaller length minor diameter 502 and 602.
Finally, Fig. 6A shows a square micro via having a breadth 604
equivalent to the diameter of a standard circular profile micro via shown as
major diameter 100 in Fig. 1.
Referring to Fig. 7, the 1 D-3D micro via format as discussed earlier is shown. The 1 D micro via 700 is representative of a standard micro via having
a circular cross section. The 2D micro via 702 has a minor diameter of
breadth 704 and a greater length major diameter 706 where the major
diameter is two times the diameter of the minor diameter. The 3D micro via 708 has a minor diameter 710 and a greater length major diameter 712 where the major diameter is three times the diameter of the minor diameter. A means of utilizing the 2D-3D micro via format can be seen by referring to Fig. 8 which
shows the "Manhattan" (high density or high population) interconnect strategy
800. One of the benefits of 2D-3D shaped via is that it can be directional,
using the breadth (the minor diameter) as the limiting factor for interconnect
density. Utilizing the 2D-3D via as part of the Manhattan strategy enables a
via of sufficient size (circumference or current carrying capacity) to be placed
within a higher resolution (more closely spaced) circuit trace pattern without a
round terminal pad or interconnect land. Round terminal pads and round vias can limit trace and interconnect density. If the Manhattan configuration is used in design to realize a higher density interconnect with the same or increased current carrying capacity, then an advantage over normal micro via design and manufacturer is attained. A second embodiment 802 of the Manhattan strategy 802 is shown where the circuit trace slightly widens to
conform to the form of the via to allow greater current carrying capacity in the
via.
Referring to Figs. 9 - 11 , a novel guard trenching method is shown. Fig. 9 shows a top view of a corner section of a printed circuit board 900 where a
plated trench 902 is shown extended about the perimeter of the board. In this
preferred embodiment the trenched via is actually one elongated trenched via aligned along the board edge, however the trench could be a series of aligned trench segments (not shown). Also this example shows an EMC sensitive
track 904 ( a circuit trace that may be EMI susceptible) that extends inside the
perimeter and a partial outer shield defined by the trench and extends in parallel to said trench. The trace 904 is shown as segmented because it is
hidden; however, the trace is continuous. This inner EMC sensitive track (EMI
sensitive circuit trace) completes a coaxial shielding scheme as well as the
possibility of a grounding path established by the plated trench. The plated trench via is created by milling a series of elongated trenched through holes
along the desired perimeter that extends to and exposes a grounding plane 1000 (Ref. to Fig. 10). The grounding plane 1000, however could be any
reference plane fixed at a given potential level. For the embodiment shown in Fig. 10 the reference plane potential level is fixed at ground. Also note that the ground potential level could be a TTL Logic ground or some other signal
ground, chassis ground or some other reference ground. The trench perimeter is preferably a continuous trench. The interior walls 1002 of the elongated through holes and the edges 1004 about the mouth of the holes are then
plated with a continuous layer of conductive material 1006 there through thereby providing a path to ground. The structure of the guard trench
comprises a micro-milled trench that is plated there through 902. The plating
of the trench is continuous along the interior wall 1002 of the trench an extending to the ground plane 1000. The plating wraps around the rim of the opening of the trench and laterally extends from the opening along the edge
1004 about the mouth or opening of the trench forming a lip 1008. The ground
plane 1000 and the plating over the interior wall 1002 and the plating lip 1008 form a partial coaxial outer shield about the EMC sensitive inner conductor
track 904 thereby creating a coaxial shielding structure.
Referring to Fig. 11 and Fig. 12, double guard trenching 1200 with a
coaxialised EMC sensitive track is shown. This is a variation of the above- described guard trenching. This embodiment comprises an inner 1100 and
outer 1102 trenched via with a coaxialised EMC sensitive track 1104 (circuit
trace) there between. The trace is shown as segmented because it is hidden
from view; however, the trace is actually continuous. This embodiment can be exactly the same as the single guard trenching described above with the exception of having the inner trench for further shielding and to completely
surrounding the EMC sensitive track. The double guard trenching provides a continuous and complete outer shield surrounding the EMC sensitive track because of the joining lip structure 1201 of the double trenches.

Claims

What is claimed is:
1. A wiring connection structure for a printed circuit board for interconnecting wiring circuit traces on a plurality of circuit trace layers applied on a plurality of printed circuit board layers and electrically
isolated there between by the printed circuit board layers and having a printed circuit board multi-layer structure, characterized by:
a through hole with a convoluted shaped cross section having an
interior wall that vertically extends through and intersects
and exposes a plurality of wire circuit traces and having a plating of conductive material applied to the interior wall electrically connecting a plurality of wire exposed circuit traces on a plurality of circuit layers.
2. An EMI shielding structure for a printed circuit board for shielding wiring circuit traces on a plurality of circuit trace layers applied on a plurality of
printed circuit board layers and electrically isolated there between by
the printed circuit board layers and having a printed circuit board multi¬
layer structure, characterized by:
a trench having a rim about an opening of the trench at a top
printed circuit board layer and said trench extending through a plurality of printed circuit board layers to a
grounding plane exposing said grounding plane and said
trench having an interior wall with a conductive plating material applied over said wall and said trench having a length greater than two times a breadth of said trench and said wall vertically extends around the perimeter of the printed circuit board and said plating electrically connects to said exposed ground plane and wraps over and laterally
extends from said rim forming a lip.
3. A wiring connection structure for a printed circuit board for interconnecting a plurality of wiring traces applied on a plurality of
printed circuit board layers and electrically isolated by printed circuit board layers and having a printed circuit board first layer with a main
surface, characterized by: a first wire trace applied to said main surface having a first terminal landing pad with a first through hole there through, said first through-hole having a convoluted
shaped cross section with a continuous perimeter;
a printed circuit board first insulation layer formed over said first
wire trace having a second through hole of identical cross sectional geometry to and vertically aligned
with the first through hole and extending to the first
terminal landing pad exposing a portion of said first
landing pad; and a second wire trace applied to the printed circuit board first insulation layer having a second terminal landing pad with a third through hole having identical geometry to and vertically aligned with the first and second through holes, wherein said first, second and third through holes are adjoining and are plated there through with an electrically conductive
material forming a plated through hole with a convoluted cross
section that vertically intersects the first and second terminal pads and electrically connects the first wire trace and the second
wire trace by a connection between the first and second wire trace terminal landing pads and the plated through hole.
4. The wiring connection structure of claim 3, wherein the first through
hole has a shaped continuous curved cross section centered on a circumference diameter of a standard single diameter circular profile
micro via and wholly contained within a perimeter defined by the circumference diameter.
5. The wiring connection structure of claim 4, wherein the continuous
curved cross section is "U" shaped.
6. The wiring connection of claim 4, wherein the continuous curved cross
section is "L" shaped.
7. The wiring connection of claim 4, wherein the continuous curved cross
section is "+" shaped.
8. The wiring connection structure of claim 3, wherein the first through
hole has a shaped continuous curved cross section centered on a
circumference diameter of a standard single diameter circular profile micro via and extends beyond the perimeter defined by the circumference diameter.
9. A reference plane structure of a printed circuit board for fixing a
potential reference for a plurality of wiring circuit trace layers that are
electrically isolated there between by a plurality of printed circuit board layers and having a printed circuit board first layer with a main surface, characterized by: a first wire trace circuit layer applied to said main surface;
a first printed circuit board-insulating layer formed over said first
wire trace circuit layer;
a first reference plane applied over the first printed circuit board
insulation layer;
a trench having an interior wall and extending about a perimeter encompassing the first wire trace circuit layer and extending through the printed circuit board first layer,
extending through and exposing the first wire trace circuit layer, extending through the first insulation layer and extending to the reference plane exposing said reference plane; and
a conductive plating layer on the interior wall electrically
connecting the first wire trace layer to the grounding plane.
10. The reference plane structure of claim 9, where the perimeter
encompasses a portion of the first wire trace circuit layer.
11. The reference plane structure of claim 9, where the reference plane is
fixed at a ground potential.
12. The reference plane structure of claim 9, where the reference plane is
fixed at a reference voltage.
13. A wiring connection structure for a printed circuit board for interconnecting a plurality of wiring circuit traces applied on a plurality of
printed circuit board layers and electrically isolated by printed circuit
board layers and having a first printed circuit board layer with a main surface, characterized by:
a first wire circuit trace having a width applied to said main surface and having a first terminal landing pad with a terminal width the same as the width of the first wire trace and having a first through hole with a major and minor
diameter where the minor diameter is less than the width of the first trace and the major diameter is elongated and
directional along a direction of the terminal landing pad; a printed circuit board first insulation layer formed over said first
wire trace having a second through hole having identical
geometry and orientation as and vertically aligned with the first through hole and extending to the first wire trace terminal landing pad; and
a second wire circuit trace applied to the printed circuit board first insulation layer having a second terminal landing pad with a third through hole having identical geometry to and
aligned with the first through hole, wherein said first, second and third through holes are adjoining and are plated there through with an electrically conductive
material forming a plated through hole vertically intersecting the first and second terminal pads and electrically connecting the first
wire trace and the second wire trace by a connection between the first and second landing pads and the through hole.
14. The wiring connection structure of claim 13, wherein the major diameter
is at least about twice that of the minor diameter.
15. The wiring connection structure of claim 13, wherein the major diameter
is at least about three times that of the minor diameter.
16. A wiring connection structure for a printed circuit board for
interconnecting a plurality of wiring circuit traces applied on a plurality of
printed circuit board layers and electrically isolated by printed circuit board layers and having a first printed circuit board layer with a main
surface, characterized by: a first wire circuit trace having a first width applied to said main surface and having a first terminal landing pad with a
second width which is greater than the first width and having a first through hole with a major and minor diameter and the minor diameter is less than the second width and
the major diameter is greater than the first width and is directed along and within the terminal landing pad;
a printed circuit board first insulation layer formed over said first
wire trace having a second through hole of identical
geometry and orientation as and vertically aligned with the
first through hole and extending to the first wire trace
terminal landing pad; and a second wire circuit trace applied to the printed circuit board first insulation layer having a second terminal landing pad with a third through hole having identical geometry to and aligned with the first through hole, wherein said first, second and third through holes are adjoining
and are plated with an electrically conductive material forming a plated through hole vertically intersecting the first and second
terminal pads and electrically connecting the first wire trace and the second wire trace by a connection between the first and second landing pads and the through hole.
17. A method of interconnecting a plurality of wiring circuit traces applied on a plurality of printed circuit board layers and electrically isolated by printed circuit board layers characterized by the steps of: applying a first wire trace to a main surface of a first printed
circuit board layer where said wire trace has a first
terminal landing pad;
forming a first printed circuit board insulation layer over said first wire trace;
applying a second wire trace over the first insulation layer, said trace having a second terminal landing pad vertically
aligned over the first landing pad; cutting with a cutting means vertically down through the first landing pad, the insulation layer, and the second landing
pad removing away material about an axial centerline of the cutting means with a generally circular patterned cutting action;
translating the cutting means laterally while continuing the
circular patterned cutting action forming a non-circular through hole through the first and second pads and the
insulation layer to define an interior wall and exposing the first and second terminal pads; and plating the interior wall with an electrically conductive material, electrically connecting the first and second wire traces by
the connection established between the first and second terminal landing pads and the electrically conductive
material plating.
18. The method of interconnecting a plurality of wire traces of claim 17, the
cutting is cutting by plasma ablation.
19. The method of interconnecting a plurality of wire traces of claim 17, the
cutting is cutting with a laser.
20. A method of grounding and shielding a plurality of wiring circuit traces
applied on a plurality of printed circuit board layers electrically isolated by a plurality of printed circuit board layers characterized by the steps of:
applying a first wire circuit trace to a main surface of a first
printed circuit board layer said first wire trace having a first ground terminal lead;
forming a first printed circuit board insulation layer over said first wire trace;
applying a grounding plane over the first printed circuit board insulation layer;
cutting vertically down through the first printed circuit board layer
and the first insulation layer removing away material about
an axial center line with a generally circular patterned cutting action with a cutting means to a depth sufficient to
transcend the first wire trace and extend to the grounding plane ;
translating the cutting means laterally while continuing the
circular patterned cutting action forming a trench extending to form a perimeter at least partially about the first wire trace having an interior wall exposing the first
ground terminal lead and the ground plane; and plating the interior wall of the trenched through hole with an electrically conductive material electrically connecting the first trace to the grounding plane.
1. An EMI shielding structure for a printed circuit for shielding a plurality of wire circuit trace layers that are electrically isolated by printed circuit board layers, characterized by:
a printed circuit board having a plurality of wire trace circuit
layers and a plurality of printed circuit board insulation layers there between and having a plurality of printed circuit board edges and a grounding plane; and a first trench having an interior wall and extending in parallel with the board edge within a perimeter defined by the board edge encompassing the printed circuit board wire circuit
trace and extending through the printed circuit board layers and extending to the ground plane, exposing said
ground plane; and an electrically conductive plating material applied over the
interior wall there through and electrically connecting to
the exposed ground plane providing at least a partial perimeter shield for the printed circuit board.
22. The EMI shielding structure of claim 21, where the perimeter
encompasses a portion of the printed circuit board.
23. The EMI shielding structure of claim 21, further characterized by: a second trench having an interior wall and extending wholly
within and in parallel with an outer perimeter defined by the first trench and extending through the printed circuit board layers and extending to the ground plane exposing said ground plane,
wherein the second trench interior wall is plated with an
electrically conductive plating material applied over the interior wall there through and electrically connecting to the exposed ground plane providing a double trench shield.
24. The EMI shielding structure of claim 21, further characterized by:
an EMC sensitive track of conductive material extending wholly within and parallel with an outer perimeter defined by the
first elongated through-hole and disposed between circuit
board insulation layers through which the trenched through-hole extends.
25. An EMI shielding structure for a printed circuit for shielding a plurality of wire trace layers that are electrically isolated by printed circuit board
layers characterized by: a printed circuit board having a plurality of wire trace circuit layers and a plurality of printed circuit board insulation
layers there between and having a grounding plane layer with all layers bonded one over another; a first trench with an continuous rim about an opening of the
trench at a top layer of the printed circuit board and said
trench having an interior wall and said trench extending around a perimeter of the printed circuit board; an electrically conductive plating applied over the interior wall of the trench extending and electrically connecting to the
ground plane and extending to an wrapping over the rim
and extending laterally from said rim forming a lip; and an EMC sensitive track coaxially extending through a partial outer shield defined by the trench interior wall, the plating lip and the ground plane.
26. The EMI shielding structure of claim 25, further characterized by:
a second trench with an continuous rim about an opening of the
trench at a top layer of the printed circuit board and said
trench having an interior wall and said trench extending in parallel with the first trench around a perimeter within the
first trench; and an electrically conductive plating applied over the interior wall of the trench extending and electrically connecting to the
ground plane and extending to an wrapping over the rim and extending laterally from said rim forming a second lip which joins the first lip,
where the EMC sensitive track coaxially extends through an outer shield defined by the first and second trench interior walls, the first and second plating lips and the ground plane.
PCT/US1999/020418 1998-09-10 1999-09-07 Non-circular micro-via Ceased WO2000016443A1 (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
EA200100329A EA003157B1 (en) 1998-09-10 1999-09-07 Non-circular micro-via
AU58120/99A AU5812099A (en) 1998-09-10 1999-09-07 Non-circular micro-via
BR9913588-4A BR9913588A (en) 1998-09-10 1999-09-07 Non-circular pathway
KR1020017002973A KR20010086372A (en) 1998-09-10 1999-09-07 Non-Circular Micro-Via
CA002343445A CA2343445A1 (en) 1998-09-10 1999-09-07 Non-circular micro-via
IL14182699A IL141826A0 (en) 1998-09-10 1999-09-07 Non-circular micro-via
US09/786,787 US6713685B1 (en) 1998-09-10 1999-09-07 Non-circular micro-via
HK02101572.2A HK1042780B (en) 1998-09-10 1999-09-07 Non-circular micro-via
JP2000570871A JP2002525854A (en) 1998-09-10 1999-09-07 Non-circular micro holes
EP99945538A EP1127387B1 (en) 1998-09-10 1999-09-07 Non-circular micro-via
DE69934814T DE69934814T2 (en) 1998-09-10 1999-09-07 NON-CIRCULAR MICRO-DRILLING
NO20011219A NO20011219L (en) 1998-09-10 2001-03-09 Non-circulating miniature punch-throughs for electronic circuit boards
US11/825,169 US20080173476A1 (en) 1998-09-10 2007-07-05 Embedded waveguide and embedded electromagnetic shielding

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9973098P 1998-09-10 1998-09-10
US60/099,730 1998-09-10

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US09/786,787 A-371-Of-International US6713685B1 (en) 1998-09-10 1999-09-07 Non-circular micro-via
US10/046,323 Continuation-In-Part US20020130739A1 (en) 1998-09-10 2002-01-14 Embedded waveguide and embedded electromagnetic shielding
US10/697,461 Continuation US20040112617A1 (en) 1998-09-10 2003-10-30 Non-circular micro-via

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JP (1) JP2002525854A (en)
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AU (2) AU5812099A (en)
BR (1) BR9913588A (en)
CA (1) CA2343445A1 (en)
DE (1) DE69934814T2 (en)
EA (1) EA003157B1 (en)
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KR100455021B1 (en) 2004-11-06
KR20030074544A (en) 2003-09-19
EP1127387A1 (en) 2001-08-29
CA2343445A1 (en) 2000-03-23
IL141826A0 (en) 2002-03-10
DE69934814D1 (en) 2007-02-22
TR200100713T2 (en) 2001-10-22
EP1127387A4 (en) 2004-05-26
EA003157B1 (en) 2003-02-27
AU5820999A (en) 2000-03-27
BR9913588A (en) 2001-06-05
ES2281188T3 (en) 2007-09-16
AU5812099A (en) 2000-04-03
DE69934814T2 (en) 2007-10-11
JP2002525854A (en) 2002-08-13
CN1317163A (en) 2001-10-10
HK1042780A1 (en) 2002-08-23
KR20010086372A (en) 2001-09-10
WO2000014771A2 (en) 2000-03-16
EA200100329A1 (en) 2001-10-22
EP1127387B1 (en) 2007-01-10
NO20011219L (en) 2001-05-04
CN1133240C (en) 2003-12-31
KR20030074545A (en) 2003-09-19
PL346561A1 (en) 2002-02-11
NO20011219D0 (en) 2001-03-09

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