WO2000051165A3 - Misfet with narrow bandgap source - Google Patents

Misfet with narrow bandgap source Download PDF

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Publication number
WO2000051165A3
WO2000051165A3 PCT/IB2000/000235 IB0000235W WO0051165A3 WO 2000051165 A3 WO2000051165 A3 WO 2000051165A3 IB 0000235 W IB0000235 W IB 0000235W WO 0051165 A3 WO0051165 A3 WO 0051165A3
Authority
WO
WIPO (PCT)
Prior art keywords
source
layer
fermi
level
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2000/000235
Other languages
French (fr)
Other versions
WO2000051165A2 (en
Inventor
Carlos J R P Augusto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE20022706U priority Critical patent/DE20022706U1/en
Priority to EP00905235A priority patent/EP1166347A2/en
Priority to JP2000601674A priority patent/JP2003523615A/en
Priority to AU26857/00A priority patent/AU2685700A/en
Priority to US09/889,815 priority patent/US6674099B1/en
Publication of WO2000051165A2 publication Critical patent/WO2000051165A2/en
Publication of WO2000051165A3 publication Critical patent/WO2000051165A3/en
Anticipated expiration legal-status Critical
Priority to US10/725,830 priority patent/US7023030B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165—Tunnel injectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2). A drain layer has a drain Fermi-Level (EF4). A channel layer is provided between the source layer and the drain layer, the channel layer being made with a material having a channel band-gap (EG3) and a channel mid-gap value (EGM3), the channel layer having a channel Fermi-Level (EF3). A source contact layer is connected to the source layer opposite the channel layer, the source contact layer having a source contact Fermi-Level (EF1). A gate electrode has a gate electrode Fermi-Level (EF6). The source band-gap is substantially narrower (EG2) than the channel band-gap (EG3). The source contact Fermi-Level (EF1), the source Fermi-Level (EF2), the channel Fermi-Level (EF3), the drain Fermi-Level (EF4) and the gate electrode Fermi-Level (EF6) are equal to the source mid-gap value (EGM2) and the channel mid-gap value (EGM3), within a predetermined tolerance value, when no voltage is applied to the device.
PCT/IB2000/000235 1999-02-24 2000-02-24 Misfet with narrow bandgap source Ceased WO2000051165A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE20022706U DE20022706U1 (en) 1999-02-24 2000-02-24 MISFET
EP00905235A EP1166347A2 (en) 1999-02-24 2000-02-24 Misfet with narrow bandgap source
JP2000601674A JP2003523615A (en) 1999-02-24 2000-02-24 MISFET
AU26857/00A AU2685700A (en) 1999-02-24 2000-02-24 Misfet
US09/889,815 US6674099B1 (en) 1999-02-24 2000-02-24 Misfet
US10/725,830 US7023030B2 (en) 1999-02-24 2003-12-01 Misfet

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12147399P 1999-02-24 1999-02-24
US60/121,473 1999-02-24

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US09889815 A-371-Of-International 2000-02-24
US10/725,830 Continuation-In-Part US7023030B2 (en) 1999-02-24 2003-12-01 Misfet

Publications (2)

Publication Number Publication Date
WO2000051165A2 WO2000051165A2 (en) 2000-08-31
WO2000051165A3 true WO2000051165A3 (en) 2001-05-31

Family

ID=22396952

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/000235 Ceased WO2000051165A2 (en) 1999-02-24 2000-02-24 Misfet with narrow bandgap source

Country Status (5)

Country Link
EP (1) EP1166347A2 (en)
JP (1) JP2003523615A (en)
AU (1) AU2685700A (en)
DE (1) DE20022706U1 (en)
WO (1) WO2000051165A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002027063A2 (en) 2000-09-28 2002-04-04 President And Fellows Of Harward College Vapor deposition of oxides, silicates and phosphates
US7352036B2 (en) * 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
KR101448899B1 (en) * 2007-06-12 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Capacitor-less memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
EP0749162A2 (en) * 1995-06-16 1996-12-18 Interuniversitair Micro-Elektronica Centrum Vzw Vertical MISFET devices, CMOS process integration, RAM applications
US5801398A (en) * 1994-10-18 1998-09-01 Frontec Corporation Field effect transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188165A (en) * 1982-04-28 1983-11-02 Nec Corp Semiconductor device
JPS62274776A (en) * 1986-05-23 1987-11-28 Hitachi Ltd Semiconductor device
JPH09232576A (en) * 1995-06-16 1997-09-05 Interuniv Micro Electro Centrum Vzw Vertical misfet device, cmos process integration and ram application

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
US5801398A (en) * 1994-10-18 1998-09-01 Frontec Corporation Field effect transistor
EP0749162A2 (en) * 1995-06-16 1996-12-18 Interuniversitair Micro-Elektronica Centrum Vzw Vertical MISFET devices, CMOS process integration, RAM applications

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHOWDHURY R ET AL: "PULSED LASER DEPOSITION OF EPITAXIAL SI/TIN/SI7100) HETEROSTRUCTURES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 64, no. 10, 7 March 1994 (1994-03-07), pages 1236 - 1238, XP000429868, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
JP2003523615A (en) 2003-08-05
AU2685700A (en) 2000-09-14
DE20022706U1 (en) 2002-01-24
WO2000051165A2 (en) 2000-08-31
EP1166347A2 (en) 2002-01-02

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