WO2001029549A3 - Verfahren zur herstellung elektrischer leiterstrukturen im nanometerbereich sowie deren verwendung als impedimetrischer sensor - Google Patents

Verfahren zur herstellung elektrischer leiterstrukturen im nanometerbereich sowie deren verwendung als impedimetrischer sensor Download PDF

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Publication number
WO2001029549A3
WO2001029549A3 PCT/EP2000/009784 EP0009784W WO0129549A3 WO 2001029549 A3 WO2001029549 A3 WO 2001029549A3 EP 0009784 W EP0009784 W EP 0009784W WO 0129549 A3 WO0129549 A3 WO 0129549A3
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WO
WIPO (PCT)
Prior art keywords
producing electric
conductive structures
electric conductive
nanometric range
impedimetric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2000/009784
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English (en)
French (fr)
Other versions
WO2001029549A2 (de
Inventor
Frank Katzenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to EP00975855A priority Critical patent/EP1222453A2/de
Publication of WO2001029549A2 publication Critical patent/WO2001029549A2/de
Publication of WO2001029549A3 publication Critical patent/WO2001029549A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

Beschrieben wird ein Verfahren zur Herstellung elektrischer Leiterstruckturen im Nanometerbereich sowie deren Verwendung in einem impedimetrischen biochemischen Sensor. Die Erfindung zeichnet sich dadurch aus, dass unter Verwendung eines, eine Oberflächentopografie aufweisenden dielektrischen Flächensubstrats, deren oberflächentorpografie eine Vielzahl, weitgehend parallel zueinander verlaufender, über die Oberfläche des Flächensubstrats erhabener Kantenzüge aufweist, eine, das Flächensubstrat mit elektrisch leitendem Material beaufschlagende Schrägbeschattung derart durchgeführt wird, dass sich das elektrisch leitende Material bevorzugt an den Kantenzügen absetzt.
PCT/EP2000/009784 1999-10-19 2000-10-06 Verfahren zur herstellung elektrischer leiterstrukturen im nanometerbereich sowie deren verwendung als impedimetrischer sensor Ceased WO2001029549A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00975855A EP1222453A2 (de) 1999-10-19 2000-10-06 Verfahren zur herstellung elektrischer leiterstrukturen im nanometerbereich sowie deren verwendung als impedimetrischer sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1999150378 DE19950378B4 (de) 1999-10-19 1999-10-19 Verfahren zur Herstellung eines impedimetrischen Sensors
DE19950378.8 1999-10-19

Publications (2)

Publication Number Publication Date
WO2001029549A2 WO2001029549A2 (de) 2001-04-26
WO2001029549A3 true WO2001029549A3 (de) 2002-01-24

Family

ID=7926182

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/009784 Ceased WO2001029549A2 (de) 1999-10-19 2000-10-06 Verfahren zur herstellung elektrischer leiterstrukturen im nanometerbereich sowie deren verwendung als impedimetrischer sensor

Country Status (3)

Country Link
EP (1) EP1222453A2 (de)
DE (1) DE19950378B4 (de)
WO (1) WO2001029549A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10161447A1 (de) * 2001-12-14 2003-06-26 Caesar Stiftung Impedanzsensor
US7561332B2 (en) 2004-11-30 2009-07-14 Agoura Technologies, Inc. Applications and fabrication techniques for large scale wire grid polarizers
US7351346B2 (en) 2004-11-30 2008-04-01 Agoura Technologies, Inc. Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths
EP1772732A1 (de) * 2005-10-07 2007-04-11 Innogenetics N.V. Polymer-replizierte verflochtene Elektroden-Arrays für (Bio)-Sensoranwendungen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387165A (en) * 1982-04-22 1983-06-07 Youngblood James L H2 S Detector having semiconductor and noncontinuous inert film deposited thereon
US4674320A (en) * 1985-09-30 1987-06-23 The United States Of America As Represented By The United States Department Of Energy Chemoresistive gas sensor
WO1997021094A1 (en) * 1995-12-01 1997-06-12 Innogenetics N.V. Impedimetric detection system and method of production thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4033658A1 (de) * 1990-10-23 1992-04-30 Siemens Ag Verfahren zur bearbeitung von grabenflanken in halbleitersubstraten
DE4143084A1 (de) * 1991-12-27 1993-07-01 Rudolf Prof Dr Hezel Verfahren zur herstellung einer solarzelle sowie solarzelle
DE4318519C2 (de) * 1993-06-03 1996-11-28 Fraunhofer Ges Forschung Elektrochemischer Sensor
DE4421407C1 (de) * 1994-06-18 1995-06-01 Kurz Leonhard Fa Flächenelement mit einer räumlichen, bereichsweise beschichteten Mikrostruktur sowie Verwendung eines solchen Flächenelements
DE4444585A1 (de) * 1994-12-14 1996-06-27 Siemens Ag Aufzeichnungsmedium zu einer hochdichten Datenspeicherung und Verfahren zu dessen Herstellung
DE19610115C2 (de) * 1996-03-14 2000-11-23 Fraunhofer Ges Forschung Detektion von Molekülen und Molekülkomplexen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387165A (en) * 1982-04-22 1983-06-07 Youngblood James L H2 S Detector having semiconductor and noncontinuous inert film deposited thereon
US4674320A (en) * 1985-09-30 1987-06-23 The United States Of America As Represented By The United States Department Of Energy Chemoresistive gas sensor
WO1997021094A1 (en) * 1995-12-01 1997-06-12 Innogenetics N.V. Impedimetric detection system and method of production thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LIEBERWIRTH I ET AL: "NANOSTRUCTURED POLYMER FILMS BY ELECTRON-BEAM IRRADIATION AND SELECTIVE METALLIZATION", ADVANCED MATERIALS,DE,VCH VERLAGSGESELLSCHAFT, WEINHEIM, vol. 10, no. 13, 10 September 1998 (1998-09-10), pages 997 - 1001, XP000781580, ISSN: 0935-9648 *
SUGAWARA A ET AL: "SELF-ORGANIZED FE NANOWIRE ARRAYS PREPARED BY SHADOW DEPOSITION ON NACL(110) TEMPLATES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 70, no. 8, 24 February 1997 (1997-02-24), pages 1043 - 1045, XP000685188, ISSN: 0003-6951 *
VAN GERWEN P ET AL: "Nanoscaled interdigitated electrode arrays for biochemical sensors", SENSORS AND ACTUATORS B,CH,ELSEVIER SEQUOIA S.A., LAUSANNE, vol. 49, no. 1-2, 25 June 1998 (1998-06-25), pages 73 - 80, XP004141441, ISSN: 0925-4005 *

Also Published As

Publication number Publication date
WO2001029549A2 (de) 2001-04-26
DE19950378A1 (de) 2001-05-10
DE19950378B4 (de) 2005-07-21
EP1222453A2 (de) 2002-07-17

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