WO2001032793A3 - Use of cesium hydroxide in a dielectric cmp slurry - Google Patents

Use of cesium hydroxide in a dielectric cmp slurry Download PDF

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Publication number
WO2001032793A3
WO2001032793A3 PCT/US2000/041707 US0041707W WO0132793A3 WO 2001032793 A3 WO2001032793 A3 WO 2001032793A3 US 0041707 W US0041707 W US 0041707W WO 0132793 A3 WO0132793 A3 WO 0132793A3
Authority
WO
WIPO (PCT)
Prior art keywords
cesium hydroxide
cmp slurry
dielectric cmp
dielectric
polishing compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/041707
Other languages
French (fr)
Other versions
WO2001032793A2 (en
WO2001032793A8 (en
Inventor
Alicia F Francis
Brian L Mueller
James A Dirksen
Paul M Feeney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to AU36390/01A priority Critical patent/AU3639001A/en
Priority to EP00991904A priority patent/EP1234010B1/en
Priority to DE60009546T priority patent/DE60009546T2/en
Priority to AT00991904T priority patent/ATE263224T1/en
Priority to KR1020027005704A priority patent/KR20020077343A/en
Priority to JP2001535478A priority patent/JP2003514061A/en
Priority to HK03100847.2A priority patent/HK1048826A1/en
Publication of WO2001032793A2 publication Critical patent/WO2001032793A2/en
Publication of WO2001032793A3 publication Critical patent/WO2001032793A3/en
Publication of WO2001032793A8 publication Critical patent/WO2001032793A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositions.
PCT/US2000/041707 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry Ceased WO2001032793A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
AU36390/01A AU3639001A (en) 1999-11-04 2000-10-31 Use of csoh in a dielectric cmp slurry
EP00991904A EP1234010B1 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry
DE60009546T DE60009546T2 (en) 1999-11-04 2000-10-31 USE OF CÄSIUM HYDROXYDE FOR DIELECTRIC AIR INSULATION
AT00991904T ATE263224T1 (en) 1999-11-04 2000-10-31 USE OF CESIUM HYDROXYDE FOR DIELECTRIC SLURRY
KR1020027005704A KR20020077343A (en) 1999-11-04 2000-10-31 Use of Cesium Hydroxide in a Dielectric CMP Slurry
JP2001535478A JP2003514061A (en) 1999-11-04 2000-10-31 Use of CsOH in dielectric CMP slurry
HK03100847.2A HK1048826A1 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/428,965 US6350393B2 (en) 1999-11-04 1999-11-04 Use of CsOH in a dielectric CMP slurry
US09/428,965 1999-11-04

Publications (3)

Publication Number Publication Date
WO2001032793A2 WO2001032793A2 (en) 2001-05-10
WO2001032793A3 true WO2001032793A3 (en) 2001-08-02
WO2001032793A8 WO2001032793A8 (en) 2001-10-04

Family

ID=23701170

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/041707 Ceased WO2001032793A2 (en) 1999-11-04 2000-10-31 Use of cesium hydroxide in a dielectric cmp slurry

Country Status (11)

Country Link
US (1) US6350393B2 (en)
EP (1) EP1234010B1 (en)
JP (3) JP2003514061A (en)
KR (1) KR20020077343A (en)
CN (1) CN1220742C (en)
AT (1) ATE263224T1 (en)
AU (1) AU3639001A (en)
DE (1) DE60009546T2 (en)
HK (1) HK1048826A1 (en)
TW (1) TW554022B (en)
WO (1) WO2001032793A2 (en)

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DE10063491A1 (en) * 2000-12-20 2002-06-27 Bayer Ag Sour polishing slurry for chemical mechanical polishing of SiO¶2¶ insulation layers
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100526092B1 (en) * 2002-10-15 2005-11-08 주식회사 네패스 Polishing composition for silicon wafer
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
KR101371853B1 (en) * 2005-01-05 2014-03-07 니타 하스 인코포레이티드 Polishing slurry
US7351662B2 (en) * 2005-01-07 2008-04-01 Dupont Air Products Nanomaterials Llc Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
EP1960570A2 (en) 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
JP5281408B2 (en) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド Doped aluminum nitride crystal and method for producing the same
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2007933B1 (en) 2006-03-30 2017-05-10 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20100022171A1 (en) * 2006-10-16 2010-01-28 Nevin Naguib Glass polishing compositions and methods
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (en) 2007-01-26 2011-06-22 晶体公司 Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US8754021B2 (en) 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
EP2768920A4 (en) * 2011-10-21 2015-06-03 Advanced Tech Materials AMINOUS-FREE CMP COMPOSITION AND METHOD FOR USE THEREOF
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6275817B2 (en) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. Planar contacts to pseudomorphic and optoelectronic devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0322721A2 (en) * 1987-12-29 1989-07-05 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers
EP0373501A2 (en) * 1988-12-12 1990-06-20 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers

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US4440670A (en) 1982-09-30 1984-04-03 Exxon Research And Engineering Co. Method of synthesizing high surface area unagglomerated noble metal pyrochlore compounds
JP2625002B2 (en) * 1988-06-27 1997-06-25 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー Composition for fine polishing of wafers
US5352277A (en) 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5129982A (en) 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
US5525191A (en) * 1994-07-25 1996-06-11 Motorola, Inc. Process for polishing a semiconductor substrate
US5714418A (en) * 1995-11-08 1998-02-03 Intel Corporation Diffusion barrier for electrical interconnects in an integrated circuit
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH09316431A (en) * 1996-05-27 1997-12-09 Showa Kiyabotsuto Super Metal Kk Polishing slurry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0322721A2 (en) * 1987-12-29 1989-07-05 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers
EP0373501A2 (en) * 1988-12-12 1990-06-20 E.I. Du Pont De Nemours And Company Fine polishing composition for wafers

Also Published As

Publication number Publication date
ATE263224T1 (en) 2004-04-15
HK1048826A1 (en) 2003-04-17
KR20020077343A (en) 2002-10-11
JP6030703B2 (en) 2016-11-24
CN1387556A (en) 2002-12-25
US6350393B2 (en) 2002-02-26
DE60009546D1 (en) 2004-05-06
JP2003514061A (en) 2003-04-15
JP2012156550A (en) 2012-08-16
WO2001032793A2 (en) 2001-05-10
US20010051433A1 (en) 2001-12-13
JP2015147938A (en) 2015-08-20
DE60009546T2 (en) 2005-02-03
TW554022B (en) 2003-09-21
EP1234010B1 (en) 2004-03-31
EP1234010A2 (en) 2002-08-28
WO2001032793A8 (en) 2001-10-04
AU3639001A (en) 2001-05-14
CN1220742C (en) 2005-09-28

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