WO2001097270A3 - Substrate cleaning apparatus and method - Google Patents

Substrate cleaning apparatus and method Download PDF

Info

Publication number
WO2001097270A3
WO2001097270A3 PCT/US2001/019218 US0119218W WO0197270A3 WO 2001097270 A3 WO2001097270 A3 WO 2001097270A3 US 0119218 W US0119218 W US 0119218W WO 0197270 A3 WO0197270 A3 WO 0197270A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
cleaning apparatus
substrate cleaning
exposing
maintaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/019218
Other languages
French (fr)
Other versions
WO2001097270A2 (en
Inventor
Chun Yan
Qi Li
Diana Ma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP01944538A priority Critical patent/EP1297566A2/en
Priority to JP2002511375A priority patent/JP2004514272A/en
Publication of WO2001097270A2 publication Critical patent/WO2001097270A2/en
Anticipated expiration legal-status Critical
Publication of WO2001097270A3 publication Critical patent/WO2001097270A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A substrate (30) may be cleaned by exposing the substrate (30) to an energized stripping gas while maintaining the substrate (30) at a first temperature and exposing the substrate (30) to an energized passivating gas while maintaining the substrate (30) at a second temperature. In another version, the substrate (30) is stripped and passivated in separate chambers. A cleaning chamber (120) may be provided with a heater (320) to heat the top of the substrate (30)
PCT/US2001/019218 2000-06-14 2001-06-14 Substrate cleaning apparatus and method Ceased WO2001097270A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01944538A EP1297566A2 (en) 2000-06-14 2001-06-14 Substrate cleaning apparatus and method
JP2002511375A JP2004514272A (en) 2000-06-14 2001-06-14 Apparatus and method for cleaning substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59533600A 2000-06-14 2000-06-14
US09/595,336 2000-06-14

Publications (2)

Publication Number Publication Date
WO2001097270A2 WO2001097270A2 (en) 2001-12-20
WO2001097270A3 true WO2001097270A3 (en) 2003-01-23

Family

ID=24382834

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/019218 Ceased WO2001097270A2 (en) 2000-06-14 2001-06-14 Substrate cleaning apparatus and method

Country Status (3)

Country Link
EP (1) EP1297566A2 (en)
JP (1) JP2004514272A (en)
WO (1) WO2001097270A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980045B2 (en) 2007-05-30 2015-03-17 Applied Materials, Inc. Substrate cleaning chamber and components

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7758763B2 (en) 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
JP2008235562A (en) * 2007-03-20 2008-10-02 Taiyo Nippon Sanso Corp Cleaning method for plasma CVD film forming apparatus
EP2077467B9 (en) 2008-01-04 2014-09-03 Adixen Vacuum Products Method for manufacturing photo masks and device for implementing same
CN101925860B (en) * 2008-03-05 2012-12-12 阿尔卡特朗讯公司 Method of fabricating photomasks and device for implementing the same
JP2011523222A (en) * 2008-06-10 2011-08-04 エーエスエムエル ネザーランズ ビー．ブイ． Method and system for thermally conditioning an optical element
JP6165518B2 (en) * 2013-06-25 2017-07-19 株式会社日立ハイテクノロジーズ Plasma processing method and vacuum processing apparatus
KR102674205B1 (en) * 2020-10-27 2024-06-12 세메스 주식회사 Apparatus and method for treating substrate
KR102614922B1 (en) * 2020-12-30 2023-12-20 세메스 주식회사 Apparatus and method for treating substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0489179A1 (en) * 1990-06-27 1992-06-10 Fujitsu Limited Method of manufacturing semiconductor integrated circuit and equipment for the manufacture
US5221424A (en) * 1991-11-21 1993-06-22 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
WO1998057366A1 (en) * 1997-06-11 1998-12-17 Lam Research Corporation Methods and compositions for post-etch layer stack treatment in semiconductor fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0489179A1 (en) * 1990-06-27 1992-06-10 Fujitsu Limited Method of manufacturing semiconductor integrated circuit and equipment for the manufacture
US5221424A (en) * 1991-11-21 1993-06-22 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
WO1998057366A1 (en) * 1997-06-11 1998-12-17 Lam Research Corporation Methods and compositions for post-etch layer stack treatment in semiconductor fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980045B2 (en) 2007-05-30 2015-03-17 Applied Materials, Inc. Substrate cleaning chamber and components

Also Published As

Publication number Publication date
JP2004514272A (en) 2004-05-13
WO2001097270A2 (en) 2001-12-20
EP1297566A2 (en) 2003-04-02

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