WO2002019377A3 - Electrostatic trap for particles entrained in an ion beam - Google Patents

Electrostatic trap for particles entrained in an ion beam Download PDF

Info

Publication number
WO2002019377A3
WO2002019377A3 PCT/GB2001/003758 GB0103758W WO0219377A3 WO 2002019377 A3 WO2002019377 A3 WO 2002019377A3 GB 0103758 W GB0103758 W GB 0103758W WO 0219377 A3 WO0219377 A3 WO 0219377A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
particles entrained
electrostatic trap
polarity
electric fields
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2001/003758
Other languages
French (fr)
Other versions
WO2002019377A2 (en
Inventor
Eric Ryan Harrington
Victor Maurice Benveniste
Michael Anthony Graf
Robert Day Rathmell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Power Solutions II Ltd
Axcelis Technologies Inc
Original Assignee
Eaton Ltd
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Ltd, Axcelis Technologies Inc filed Critical Eaton Ltd
Priority to JP2002524185A priority Critical patent/JP5333708B2/en
Priority to EP01960907A priority patent/EP1314181B1/en
Priority to AU2001282298A priority patent/AU2001282298A1/en
Priority to KR1020037003082A priority patent/KR100855135B1/en
Priority to DE60136935T priority patent/DE60136935D1/en
Publication of WO2002019377A2 publication Critical patent/WO2002019377A2/en
Publication of WO2002019377A3 publication Critical patent/WO2002019377A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/40—Arrangements for removing or diverting unwanted particles, e.g. for negative ions or fringing electrons; Arrangements for velocity or mass selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Elimination Of Static Electricity (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

A system (10) for inhibiting the transport of contaminant particles (60) with an ion beam (44) includes a pair of electrodes (14, 16) that provide opposite electric fields (26, 28, 30, 32) through which the ion beam (44) travels. A particle (60) entrained in the ion beam (44) is charged to a polarity matching the polarity of ion beam (44) when traveling through a first of the electric fields (26, 28). The downstream electrode (16) provides another electric field (30, 32) for repelling the positively charged particle (60) away from the direction of beam travel.
PCT/GB2001/003758 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam Ceased WO2002019377A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002524185A JP5333708B2 (en) 2000-09-01 2001-08-21 Electrostatic trapping system for particles on ion beam flow
EP01960907A EP1314181B1 (en) 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam
AU2001282298A AU2001282298A1 (en) 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam
KR1020037003082A KR100855135B1 (en) 2000-09-01 2001-08-21 Static traps for particles entering the ion beam
DE60136935T DE60136935D1 (en) 2000-09-01 2001-08-21 ELECTROSTATIC CATCHING DEVICE FOR PARTICLES INCLUDED IN AN ION BEAM

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/654,380 2000-09-01
US09/654,380 US6534775B1 (en) 2000-09-01 2000-09-01 Electrostatic trap for particles entrained in an ion beam

Publications (2)

Publication Number Publication Date
WO2002019377A2 WO2002019377A2 (en) 2002-03-07
WO2002019377A3 true WO2002019377A3 (en) 2002-05-10

Family

ID=24624625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2001/003758 Ceased WO2002019377A2 (en) 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam

Country Status (9)

Country Link
US (1) US6534775B1 (en)
EP (1) EP1314181B1 (en)
JP (1) JP5333708B2 (en)
KR (1) KR100855135B1 (en)
CN (1) CN1311509C (en)
AU (1) AU2001282298A1 (en)
DE (1) DE60136935D1 (en)
TW (1) TWI242788B (en)
WO (1) WO2002019377A2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252237B2 (en) * 2000-12-06 2009-04-08 株式会社アルバック Ion implantation apparatus and ion implantation method
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
KR100510559B1 (en) * 2003-12-30 2005-08-26 삼성전자주식회사 Manipulator assembly in ion implanter
US7317606B2 (en) * 2004-12-10 2008-01-08 Applied Materials, Israel, Ltd. Particle trap for electrostatic chuck
WO2006133041A2 (en) * 2005-06-03 2006-12-14 Axcelis Technologies, Inc. Beam stop and beam tuning methods
US7511287B2 (en) * 2005-09-21 2009-03-31 Axcelis Technologies, Inc. Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
TWI435378B (en) * 2006-04-26 2014-04-21 艾克塞利斯科技公司 Dose uniformity correction method
TWI417947B (en) * 2006-04-26 2013-12-01 艾克塞利斯科技公司 Method and system for capturing ion beam particles and focused ion beams
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
GB2442485B (en) 2006-10-03 2008-12-10 Thermo Electron Corp X-ray photoelectron spectroscopy analysis system for surface analysis and method therefor
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
US8084757B2 (en) * 2008-01-17 2011-12-27 Applied Materials, Inc. Contamination prevention in extreme ultraviolet lithography
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US8461030B2 (en) 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces
RU2619923C2 (en) * 2012-09-04 2017-05-22 Трай Альфа Энерджи, Инк. Neutral particle beam injector based on negative ions
US9591740B2 (en) 2013-03-08 2017-03-07 Tri Alpha Energy, Inc. Negative ion-based neutral beam injector
CN103681205A (en) * 2013-12-04 2014-03-26 中国科学院大连化学物理研究所 Electrostatic lens device used for electron acceleration
US9721750B2 (en) 2015-07-28 2017-08-01 Varian Semiconductor Equipment Associates, Inc. Controlling contamination particle trajectory from a beam-line electrostatic element
KR102673632B1 (en) * 2016-12-06 2024-06-13 삼성전자주식회사 Ion beam apparatus including slit structure for extracting ion beam, and etching method and method for forming magnetic memory device using the same
US10867772B2 (en) 2017-03-21 2020-12-15 Varian Semiconductor Equipment Associates, Inc. Electrostatic element having grooved exterior surface
US10504682B2 (en) 2018-02-21 2019-12-10 Varian Semiconductor Equipment Associates, Inc. Conductive beam optic containing internal heating element
US10714301B1 (en) 2018-02-21 2020-07-14 Varian Semiconductor Equipment Associates, Inc. Conductive beam optics for reducing particles in ion implanter
US11087956B2 (en) * 2018-06-29 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Detection systems in semiconductor metrology tools
JP7132828B2 (en) * 2018-11-13 2022-09-07 住友重機械イオンテクノロジー株式会社 Ion implanter and beam parker
CN113414369B (en) * 2021-08-23 2021-11-09 江苏中科云控智能工业装备有限公司 Multi-manipulator collaborative deburring device capable of automatically distributing machining positions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148034A (en) * 1989-04-21 1992-09-15 Tokyo Electron Limited Ion implantation method
WO2000026938A1 (en) * 1998-10-30 2000-05-11 Applied Materials, Inc. Apparatus for ion implantation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611029A (en) * 1969-09-09 1971-10-05 Atomic Energy Commission Source for highly stripped ions
US4683922A (en) 1986-01-24 1987-08-04 Allied Corporation Particle deflector and method of distributing dissimilar particles
JPH01265439A (en) * 1988-04-18 1989-10-23 Fuji Electric Co Ltd Device for ionic beams
US5134299A (en) 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
JPH05234564A (en) * 1992-02-19 1993-09-10 Nissin Electric Co Ltd Ion implanting device
JPH064493A (en) * 1992-03-31 1994-01-14 Internatl Business Mach Corp <Ibm> Method for selectively serializing access for common object and method for centralizing serialized code in operating syste
JP3054302B2 (en) 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド Plasma emission system to reduce charging on semiconductor wafers during ion implantation
JPH06243815A (en) * 1993-02-18 1994-09-02 Nissin Electric Co Ltd Ion implanter
GB2343545B (en) * 1995-11-08 2000-06-21 Applied Materials Inc An ion implanter with three electrode deceleration structure and upstream mass selection
GB2344214B (en) * 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved beam definition
US5656092A (en) 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
JP3862344B2 (en) * 1997-02-26 2006-12-27 株式会社日立製作所 Electrostatic lens

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148034A (en) * 1989-04-21 1992-09-15 Tokyo Electron Limited Ion implantation method
WO2000026938A1 (en) * 1998-10-30 2000-05-11 Applied Materials, Inc. Apparatus for ion implantation
EP1130623A1 (en) * 1998-10-30 2001-09-05 Applied Materials, Inc. Apparatus for ion implantation

Also Published As

Publication number Publication date
TWI242788B (en) 2005-11-01
JP5333708B2 (en) 2013-11-06
CN1473346A (en) 2004-02-04
JP2004508667A (en) 2004-03-18
AU2001282298A1 (en) 2002-03-13
EP1314181B1 (en) 2008-12-10
WO2002019377A2 (en) 2002-03-07
US6534775B1 (en) 2003-03-18
DE60136935D1 (en) 2009-01-22
CN1311509C (en) 2007-04-18
KR20030064748A (en) 2003-08-02
EP1314181A2 (en) 2003-05-28
KR100855135B1 (en) 2008-08-28

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