WO2002025713A1 - Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds - Google Patents

Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds Download PDF

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Publication number
WO2002025713A1
WO2002025713A1 PCT/JP2001/008233 JP0108233W WO0225713A1 WO 2002025713 A1 WO2002025713 A1 WO 2002025713A1 JP 0108233 W JP0108233 W JP 0108233W WO 0225713 A1 WO0225713 A1 WO 0225713A1
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WO
WIPO (PCT)
Prior art keywords
gas
mol
cleaning
silicon
etching
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Ceased
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PCT/JP2001/008233
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French (fr)
Inventor
Akira Sekiya
Katsuya Fukae
Yuki Mitsui
Ginjiro Tomizawa
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National Institute of Advanced Industrial Science and Technology AIST
Research Institute of Innovative Technology for the Earth RITE
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National Institute of Advanced Industrial Science and Technology AIST
Research Institute of Innovative Technology for the Earth RITE
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Priority to JP2002529826A priority Critical patent/JP3878972B2/en
Priority to EP01970182.0A priority patent/EP1320875B1/en
Publication of WO2002025713A1 publication Critical patent/WO2002025713A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Definitions

  • This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors such as chambers for CVD (chemical vapor deposition) processes or etch proceses used for manufacturing semiconductor devices on substrates.
  • the invention also relates to such gas compositions capable of efficiently etching films of silicon-containing compounds.
  • the gas compositions have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF 4 , NF 3 and the like.
  • thin films have been formed by known techniques such as CVD processes.
  • CVD processes e.g. a thin film for semiconductor devices within a CVD chamber
  • the film-forming material is also deposited, though wastefully, on the remaining surfaces exposed to the interior space of the CVD chamber, including, for example, the surfaces of inner walls of chamber, product- holding jigs, pipings, etc.
  • the material which has accumulated on surface areas other than the target area(s) can be accidentally separated therefrom. Consequently, the peeled-off material or particles thereof can often be carried to the target area where a film is being formed or to be formed, and can cause the film to become contaminated therewith. This would prevent the process operation from producing films of satisfactory quality, and thus would lead to decreased yield. Therefore, it is necessary to remove any undesirably deposited material from the chamber at appropriate intervals and clean the chamber. Removal of the obstructive deposits from the interior of CVD chambers has been carried out manually or chemically, by means of cleaning gases.
  • an etchant typically an etching gas
  • Some fundamental properties are generally required for the chamber cleaning gas and the etching gas which both act to remove the materials deposited in the chamber.
  • the cleaning gas should be able to rapidly clean the interior of the CVD chamber, while the etching gas should be able to selectively and rapidly etch the selected area or areas of deposited film. Further properties commonly required for the cleaning and etching gases include, for example, that they do not generate noxious effluent gases and they are environmentally friendly.
  • a class of perfluorocompounds such as CF 4 , C 2 F 6 , SF 6 , NF 3 and the like have been employed in large amounts in the processes for producing semiconductors and other electronic devices, as a gas for either removing the deposited materials or for etching the deposited films.
  • these conventional perfluorocompound gases are stable substances that can last for a long period of time in the atmosphere and it is difficult to treat a waste gas stream omitting the cleaning step or the etching step in which the above-mentioned conventional cleaning or etching gases are employed.
  • the waste gas stream may contain a high level of the cleaning or etching gas ingredient(s) in an undecomposed or undegraded state and the treatment to reduce these to acceptable levels before discharging to the atmosphere is very expensive.
  • fluorine-containing nitrogen compound o fers improved ability to clean deposits comprising silicon- containing compound(s), while generating, during use in a cleaning process , an effluent gas stream containing no noxious compounds, such as CF 4 , NF 3 or the like, that seriously contribute to global warming; also, improved ability to etch a thin film comprising silicon- containing compound(s), while generating, during use in an etching process, an effluent gas stream containing no noxious compounds, such as CF 4 , NF 3 or the like, that seriously contribute to global warming.
  • an object of the invention is to provide a CVD chamber cleaning gas composition which has excellent performance in cleaning deposits comprising silicon-containing compound(s) and, thus, is useful for cleaning the interior of reactors such as chambers for CVD process used for manufacturing semiconductors, and other electronic devices or the like layered on wafer substrates, and which will generate, during use in a cleaning process, an effluent gas stream containing no noxious compounds, such as CF 4 , NF 3 and the like, that seriously contribute to global warming.
  • a further object of the invention is to provide an etching gas composition which offers excellent performance in etching films comprising silicon-containing compound(s) for manufacturing semiconductors, and other electronic devices or the like layered on substrates, and which will generate, during use in an etching process, an effluent gas stream containing no noxious compounds , such as CF 4 or the like, that seriously contribute to global warming.
  • a gas composition for cleaning the interior of CVD chambers which comprises F 3 NO.
  • This first gas composition may comprise further 0 2 and/or an inert gas or gases.
  • the content of F 3 N0 is preferably in the range of 5 - 70 mol % per 100 mol % of the total quantity of the gas ingredients in the composition.
  • an FNO-containing gas composition for cleaning the interior of CVD chambers which comprises FNO in combination with 0 2 .
  • this second gas composition for cleaning CVD chambers comprises 20 - 50 mol % of FNO per 100 mol % of the total quantity of the gas ingredients in the composition.
  • the content of O z in the second gas composition ranges from 50 to 80 mol %.
  • the second gas composition for cleaning CVD chambers may comprise an inert gas or gases in place of the 0 2 , wherein the content of FNO is desirably in the range of 55 - 95 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. Desirably, the content of said inert gas or gases is in the range of 5 - 45 mol %.
  • the second gas composition for cleaning CVD chambers may comprise an inert gas or gases in addition to the FNO and 0 2 , wherein the content of FNO is desirably in the range of 20 - 90 mol % per 100 mol % of the total quantity of the gas ingredients in the composition.
  • Suitable examples of inert gases which may be used in the above-mentioned CVD chamber cleaning gas composition include N 2 , He, Ne, Ar, Kr, Xe and Rn.
  • the F 3 NO-containing and FNO-containing gas compositions for cleaning reactors are, in particular, suitable for use in cleaning the interior of the chambers of CVD equipment.
  • the gas compositions are generally suitable for removing depositions comprising a silicon-containing compound or compounds.
  • Typical examples of the silicon-containing compounds include (1) compounds consisting essentially of silicon; (2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon; and (3) compounds comprising high melting point metal suicides .
  • Etching Gas Compositions include (1) compounds consisting essentially of silicon; (2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon; and (3) compounds comprising high melting point metal suicides .
  • a first etching gas composition suitable for etching films of silicon-containing compounds which is characterized by inclusion of F 3 NO.
  • This first etching gas composition may comprise 0 2 and/or one or more inert gases in addition to the F 3 NO.
  • the content of F 3 NO in the etching gas composition is desirably in the range of 5 - 70 mol % per 100 mol % of the total quantity of the gas ingredients in the composition.
  • a second etching gas composition suitable for etching films of silicon-containing compounds which is characterized by inclusion of FNO and 0 2 and wherein the content of FNO is in the range of 20 - 50 mol % per 100 mol % of the total quantity of the gas ingredients in the composition.
  • the content of the 0 2 is desirably in the range of 50 - 80 mol %.
  • the second etching gas composition may comprise an inert gas or gases in place of the 0 2 , wherein the content of FNO is desirably in the range of 55 - 95 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. Desirably, the content of said inert gas or gases is in the range of 5 - 45 mol %.
  • the second etching gas composition may comprise an inert gas or gases in addition to the FNO and 0 2 , wherein the content of FNO is desirably in the range of 20 - 90 mol % per 100 mol % of the total quantity of the gas ingredients in the composition.
  • Suitable examples of the inert gases which may be used in the above-mentioned etching gas compositions include N 2 , He, Ne, Ar, Kr, Xe and Rn.
  • Typical examples of the silicon-containing compounds which may be etched by the above etching gas compositions include:
  • the gas compositions for removing deposits comprising silicon-containing compounds in CVD chambers and for etching film layers comprising silicon-containing compounds in accordance with the invention comprise specific fluorine- containing nitrogen compounds, or combinations thereof with other gas ingredients. These will be described in more detail.
  • the CVD chamber cleaning gas compositions according to the invention comprise F 3 NO (nitrosyl trifluoride) or mixtures thereof with other gas ingredients, or FNO (nitrosyl fluoride) or mixtures thereof with other gas ingredients . These will be explained below.
  • the first chamber cleaning gas compositions of the invention are characterized by inclusion of F 3 NO, which may include further 0 2 or one or more inert gases, or both.
  • the content of F 3 NO employed in the first chamber cleaning gas compositions desirably ranges from 5 to 70 mol %, preferably from 15 to 60 mol % per 100 mol % of the total quantity of the gas ingredients in the compositions .
  • the content of F 3 NO desirably ranges from 5 to 40 mol %, preferably from 10 to 30 mol %, per 100 mol % of the total quantity of the gas ingredients in the compositions.
  • the content of 0 2 desirably ranges from 60 to 95 mol %, preferably from 70 to 90 mol %.
  • the content of F 3 NO desirably ranges from 10 to 70 mol %, preferably from 20 to 60 mol %, per 100 mol % of the total quantity of the gas ingredients in the compositions .
  • the content of said inert gas or gases desirably ranges from 30 to 90 mol %, preferably from 40 to 80 mol %.
  • the content of F 3 NO desirably ranges from 5 to 70 mol %, preferably from 15 to 60 mol %, per 100 mol % of the total quantity of the gas ingredients in the compositions.
  • the content of 0 2 desirably ranges from 25 to 80 mol %, preferably from 30 to 70 mol %.
  • the content of said inert gas or gases desirably ranges from 5 to 50 mol %, preferably from 5 to 30 mol %.
  • the F 3 NO content used in the first chamber cleaning gas compositions falls within the above-mentioned ranges, it is possible to quickly remove the deposits on the surfaces of the interior of the CVD cambers.
  • the cleaning gas compositions include 0 2 and/or inert gas(es) in the above- mentioned ranges, then the cleaning performance of the compositions are enhanced and improved.
  • F 3 NO used in the chamber cleaning gas compositions of the invention In view of the chemical structure and physical and chemical properties of F 3 NO used in the chamber cleaning gas compositions of the invention, it is believed that the compound would have a short lifetime in the atmosphere and would have less impact on global warming. Therefore, only a very slight adverse effect on environment would be caused even if the chamber cleaning gas compositions were discharged into the atmosphere. Further, even when F 3 NO is decomposed or degraded during or after use in the cleaning process, it would emit little or no noxious gases, such as CF 4 , NF 3 and the like, that have high global warming potential and have adverse environmental effects . Furthermore, since F 3 NO has a low boiling point of -87.6°C, it is present in the gas phase when it is used under the conditions employed in the production of semiconductors and other electronic devices. The gaseous F 3 NO or gaseous mixtures containing it may be handled easily in the chamber cleaning operation .
  • F 3 NO may be prepared, for example, by the below-formulated two-stage route, but the preparation is not limited to this route:
  • the inert gases which may be used in the invention include, for example, N 2 , He, Ne, Ar, Kr, Xe, and Rn.
  • FNO-containing gas mixtures the second cleaning gas compositions
  • the second chamber cleaning gas compositions of the invention are characterized by inclusion of FNO in combination with 0 2 and/or one or more inert gases.
  • the content of FNO is desirably in the range of 20 - 50 mol %,and preferably 30 - 45 mol % per 100 mol % of the total quantity of the ingredients in the composition.
  • the content of 0 2 is desirably in the range of 50 - 80 mol %, and preferably 55 - 70 mol %.
  • the content of FNO is desirably in the range of 55 - 95 mol %, and preferably 60 - 90 mol % per 100 mol % of the total quantity of the ingredients in the composition.
  • the content of inert gas or gases is desirably in the range of 5 - 45 mol %, and preferably 10 - 40 mol %.
  • the second chamber cleaning gas composition of the invention comprises FNO, 0 2 and an inert gas or gases
  • the content of FNO is desirably in the range of 20 - 90 mol %, and preferably 30 - 80 mol % per 100 mol % of the total quantity of the ingredients in the composition.
  • the content of the inert gas or gases is desirably in the range of 5 - 50 mol %, and preferably 10 - 40 mol %.
  • FNO has a low boiling point of -59.9°C, it is present in the gas phase, when it is used under the conditions employed in the production of semiconductors and other electronic devices. Therefore, the gaseous FNO or gaseous mixtures containing it may be handled easily in the chamber cleaning operation.
  • FNO may be prepared, for example, by the below-formulated route at a high yield rate, but the preparation is not limited thereto :
  • the inert gases which may be used in the invention include, for example, N 2 , He, Ne, Ar, Kr, Xe, and Rn.
  • Other optional ingredients include, for example, N 2 , He, Ne, Ar, Kr, Xe, and Rn.
  • Other optional ingredients include, for example, N 2 , He, Ne, Ar, Kr, Xe, and Rn.
  • Other optional ingredients include, for example, N 2 , He, Ne, Ar, Kr, Xe, and Rn.
  • the cleaning gas compositions according to the invention may include any other suitable gas or gases unless they behave contrary to the objects of the invention.
  • the optional gases which may be mentioned include 0 3 , H 2 , F 2 , C1F 3 , BrF 3 and the like.
  • the proportions of the optional gases that can be present in the cleaning gas compositions are not critical, provided that the presence thereof in the cleaning gas compositions has no adverse effect on the purpose of the invention.
  • the proportion of a specific optional gas or gases may be determined by some factors , such as the amount , thickness and chemical nature of the deposits on the interior of a reactor of, for example, a CVD apparatus to be cleaned.
  • the expression "to clean a chamber” or any other synonymous expression is intended to mean removal of the films deposited on the surfaces of the inner walls, jigs, pipings, etc. exposed to the inside of chamber for manufacturing semiconductors or other electronic devices.
  • the above-mentioned gas compositions comprising the specific fluorine-containing nitrogen compounds, oxygen and other gases according to the invention may be used advantageously for cleaning CVD chambers, for example CVD equipment .
  • the target substances that are removed from the chamber by the fluorine-containing nitrogen compounds according to the invention may be any deposit comprising the aforementioned silicon-containing compounds that have accumulated on the surfaces of the inner walls of the CVD chamber, jigs, pipings and other parts in the CVD apparatus during operation of the CVD process.
  • Typical examples of the silicon-containing compounds include:
  • Si 3 N 4 and high melting point metal suicides such as WSi, and the like.
  • the material from which the CVD chambers to be cleaned by the chamber cleaning gas compositions of the present invention are prepared is not critical, and may be, for example, stainless steel, aluminum or alloys thereof.
  • the chamber cleaning gas compositions of the present invention can quickly remove the deposits on the surfaces of the inner walls of the CVD chamber, jigs, pipings or other parts in the CVD apparatus, while having no or little adverse effects, such as corrosion, erosion and pitting, on these chamber materials .
  • Removal of the deposits comprising silicon-containing compounds and possibly traces of other substances present in the interior of the CVD chamber using the cleaning gas composition comprised of fluorine-containing nitrogen compounds of the invention may be conducted in any known convenient manner.
  • Various dry cleaning techniques for example, plasma cleaning, remote plasma cleaning and microwave cleaning techniques may be employed.
  • the deposited silicon-containing compounds may be efficiently removed.
  • the gas compositions for etching a thin film of silicon- containing compounds of the invention comprise either (a) F 3 NO or a mixture thereof or (b) FNO or a mixture of FNO. These etching gas compositions will be described below in more detail.
  • the first gas composition for etching a thin film of silicon-containing compounds according to the invention is characterized by inclusion of F 3 NO, which composition may comprise 0 2 and/or one or more inert gases in addition to the F 3 NO.
  • the concentrations of F 3 NO, 0 2 and inert gases in the first etching gas composition are desirably in the same ranges as those for the aforementioned ingredients of the first chamber cleaning gas compositions.
  • the first etching gas compositions containing the ingredients in the specified proportions can rapidly etch a thin film of silicon-containing compounds .
  • the primary ingredient F 3 NO employed in the first etching gas compositions is believed to have a short lifetime in the atmosphere and would contribute less to global warming. Therefore, only a very slight adverse effect on environment would be caused, even if the etching gas compositions were discharged into the atmosphere.
  • the first etching gas compositions can highly selectively attack the films to be processed or etched, it is feasible for them to be employed as substitutes for the conventional etchant gases, such as CF 4 , NF 3 etc.
  • N 2 , He, Ne, Ar, Kr, Xe and Rn may be mentioned.
  • the second gas composition for etching a film layer or layers of silicon-containing compounds according to the invention is characterized by inclusion of FNO, which composition may comprise 0 2 and/or one or more inert gases in addition to the FNO.
  • FNO which composition may comprise 0 2 and/or one or more inert gases in addition to the FNO.
  • the contents of FNO, 0 2 and inert gases in the second etching gas composition are desirably in the same ranges as those for the ingredients of the second chamber cleaning gas compositions that were mentioned hereinbefore.
  • the second etching gas compositions containing the ingredients in the specified proportions can rapidly etch a film layer or layers of silicon-containing compounds.
  • the primary ingredient FNO employed in the second etching gas compositions decomposes or degrades during or after use of the second etching gas composition in the etching process, it would emit little or no noxious gases, such as CF 4 , NF 3 and the like that have high global warming potential and adverse environmental effects.
  • the FNO is believed to have a short lifetime in the atmosphere and contribute less to global warming. Therefore, only a very slight adverse effect on the environment would be caused, even if the etching gas compositions were discharged into the atmosphere .
  • the second etching gas compositions can highly selectively attack the films to be processed or etched, it is feasible for them to be employed as substitutes for the conventional etchant gases, such as CF 4 , NF 3? etc.
  • N 2 He, Ne, Ar, Kr, Xe and Rn may be mentioned.
  • Other optional ingredients may be mentioned.
  • the etching gas compositions according to the invention may include any other suitable gas or gases as long as they behave in accordance with the objects of the invention.
  • optional gases which may be mentioned include 0 3 , H 2 , F 2 , C1F 3 , BrF 3 and the like.
  • the proportions of the optional gases that can be present in the etching gas compositions are not critical, provided that their presence in the etching gas compositions has no adverse effect on the purpose of the invention.
  • the materials to be etched with the etching gas compositions of the invention include a thin film comprising silicon-containing compounds. Typical examples which may be mentioned are at least one of:
  • Etching of the films comprising silicon-containing compounds by means of the etching gas compositions comprising fluorine-containing nitrogen compounds of the invention may be conducted in any known convenient manner.
  • Various dry etching techniques for example, plasma etching, reactive ion etching and microwave etching techniques may be employed.
  • the conditions under which the present etching gas compositions are employed for etching may be similar to those suitable for application of the known etching techniques.
  • Advantages achieved by the Invention The chamber cleaning gas compositions of the invention show little or no tendency towards generation, during or after use in a cleaning step, of an effluent gas stream containing noxious compounds, such as CF 4 , NF 3 or the like, that could have an effect on global warming.
  • the chamber cleaning gas compositions of the present invention has only a limited effect on the environment .
  • the chamber cleaning gas compositions of the invention may be handled with ease, can quickly remove the films adhering to the interior of the CVD chamber, and have improved cleaning qualities compared to those of conventional cleaning gases.
  • the present gas compositions for etching silicon-containing films show little or no tendency towards generation, during use in an etching process, of an effluent gas stream containing noxious compounds, such as CF 4 , NF 3 or the like, that would have an effect on global warming.
  • Use of the etching gas compositions of the present invention has only a limited effect on the environment.
  • the etching gas compositions according to the invention can efficiently etch silicon-containing films while ensuring high dimensional accuracy of the product semiconductor patterns; they also demonstrate excellent etching capabilities compared to those of conventional etchant gases .
  • EXAMPLE The invention will be further illustrated in detail with reference to the following Examples which are not intended to be restrictive in any way to the scope of the invention.
  • PREPARATION 1 SYNTHESIS OF F 3 NO A dried 200 ml "HASTELLOY"* reactor vessel was charged with 26 g (0.12 mol) of antimony pentafluoride(SbF 5 ) followed by 14.2 g (0.2 mol) of nitrogen trifluoride(NF 3 ) and 8.8 g (0.2 mol) of nitrous oxide(N 2 0) . The mixture was allowed to react at 150°C for a period of 60 hours. The resulting product NF 2 0 + Sb 2 F 1:L ⁇ was treated with 10 g (0.24 mol) of sodium fluoride (NaF) and, then the mixture was allowed to react at 210°C for a period of 20 hours.

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Abstract

This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.

Description

DESCRIPTION
GAS COMPOSITIONS FOR CLEANING THE INTERIORS OF REACTORS AS WELL AS FOR ETCHING FILMS OF SILICON-CONTAINING COMPOUNDS
Field of the Invention
This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors such as chambers for CVD (chemical vapor deposition) processes or etch proceses used for manufacturing semiconductor devices on substrates. The invention also relates to such gas compositions capable of efficiently etching films of silicon-containing compounds. Advantageously, the gas compositions have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. Background of the Invention
To date, in processes for producing thin-film devices, such as for the production of semiconductors , thin films have been formed by known techniques such as CVD processes. In the formation of such a film, e.g. a thin film for semiconductor devices within a CVD chamber, though it is desirable to allow or permit a film-forming material to deposit preferentially over the target area or areas of the wafer substrate or substrates held in the CVD chamber, the film-forming material is also deposited, though wastefully, on the remaining surfaces exposed to the interior space of the CVD chamber, including, for example, the surfaces of inner walls of chamber, product- holding jigs, pipings, etc. Furthermore, during the deposition process, the material which has accumulated on surface areas other than the target area(s) can be accidentally separated therefrom. Consequently, the peeled-off material or particles thereof can often be carried to the target area where a film is being formed or to be formed, and can cause the film to become contaminated therewith. This would prevent the process operation from producing films of satisfactory quality, and thus would lead to decreased yield. Therefore, it is necessary to remove any undesirably deposited material from the chamber at appropriate intervals and clean the chamber. Removal of the obstructive deposits from the interior of CVD chambers has been carried out manually or chemically, by means of cleaning gases. In the production of semiconductors and other electronic devices, it is also necessary to partially remove a layer or layers of various semiconductive materials deposited on a wafer substrate by means of an etchant, typically an etching gas, so as to leave a semiconductor circuit in a pre-determined pattern on the wafer substrate. Some fundamental properties are generally required for the chamber cleaning gas and the etching gas which both act to remove the materials deposited in the chamber. The cleaning gas should be able to rapidly clean the interior of the CVD chamber, while the etching gas should be able to selectively and rapidly etch the selected area or areas of deposited film. Further properties commonly required for the cleaning and etching gases include, for example, that they do not generate noxious effluent gases and they are environmentally friendly. Heretofore, a class of perfluorocompounds, such as CF4, C2F6, SF6, NF3 and the like have been employed in large amounts in the processes for producing semiconductors and other electronic devices, as a gas for either removing the deposited materials or for etching the deposited films.
However, these conventional perfluorocompound gases are stable substances that can last for a long period of time in the atmosphere and it is difficult to treat a waste gas stream omitting the cleaning step or the etching step in which the above-mentioned conventional cleaning or etching gases are employed. The waste gas stream may contain a high level of the cleaning or etching gas ingredient(s) in an undecomposed or undegraded state and the treatment to reduce these to acceptable levels before discharging to the atmosphere is very expensive. These aforementioned problems have been presented by the conventional cleaning and etching gases. Furthermore, it is known that the conventional perfluorocompound gases have very high global warming potential (ITH; 100 years): when compared with carbon dioxide (C02), CF4 exhibits a factor 6,500 times; C2F6 exhibits a factor 9,200 times; SF6 exhibits a factor 23,900 times; and NF3 exhibits a factor 8,000 times, respectively, that of C02. There is a concern that these substances could have a serious effect on the environment .
Under the circumstances, there has been a strong need for a substitute etching or cleaning gas that has a low global warming potential, one which exhibits excellent performance in cleaning deposits of silicon-containing compounds as well as excellent etching performance for the silicon-containing compound films .
Even if a gas itself as used in the cleaning or etching process has no or little effect on the environment, the gas could be subject to decomposition during the cleaning or etching process, at the same time generating noxious gases, such as CF4 and NF3, which last for a long period of time in the atmosphere. Therefore, it is desired to provide a substitute etching or cleaning gas that will not decompose to produce any noxious gas or gases having an adverse effect on the environment.
Thus, the inventors, having focused their efforts on research into the amelioration or elimination of the above- mentioned prior art problems, have now discovered that a particular kind of fluorine-containing nitrogen compound o fers : improved ability to clean deposits comprising silicon- containing compound(s), while generating, during use in a cleaning process , an effluent gas stream containing no noxious compounds, such as CF4, NF3 or the like, that seriously contribute to global warming; also, improved ability to etch a thin film comprising silicon- containing compound(s), while generating, during use in an etching process, an effluent gas stream containing no noxious compounds, such as CF4, NF3 or the like, that seriously contribute to global warming.
The present invention has been developed and accomplished on the basis of the above finding. Accordingly, an object of the invention is to provide a CVD chamber cleaning gas composition which has excellent performance in cleaning deposits comprising silicon-containing compound(s) and, thus, is useful for cleaning the interior of reactors such as chambers for CVD process used for manufacturing semiconductors, and other electronic devices or the like layered on wafer substrates, and which will generate, during use in a cleaning process, an effluent gas stream containing no noxious compounds, such as CF4, NF3 and the like, that seriously contribute to global warming.
A further object of the invention is to provide an etching gas composition which offers excellent performance in etching films comprising silicon-containing compound(s) for manufacturing semiconductors, and other electronic devices or the like layered on substrates, and which will generate, during use in an etching process, an effluent gas stream containing no noxious compounds , such as CF4 or the like, that seriously contribute to global warming. Summary of the Invention CVD Chamber Cleaning Gas Compositions:
In accordance with the first aspect of the invention, there is provided a gas composition for cleaning the interior of CVD chambers, which comprises F3NO. This first gas composition may comprise further 02 and/or an inert gas or gases. The content of F3N0 is preferably in the range of 5 - 70 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. In accordance with the second aspect of the invention, there is provided an FNO-containing gas composition for cleaning the interior of CVD chambers, which comprises FNO in combination with 02. Preferably, this second gas composition for cleaning CVD chambers comprises 20 - 50 mol % of FNO per 100 mol % of the total quantity of the gas ingredients in the composition. Desirably, the content of Oz in the second gas composition ranges from 50 to 80 mol %.
The second gas composition for cleaning CVD chambers may comprise an inert gas or gases in place of the 02, wherein the content of FNO is desirably in the range of 55 - 95 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. Desirably, the content of said inert gas or gases is in the range of 5 - 45 mol %. Alternatively, the second gas composition for cleaning CVD chambers may comprise an inert gas or gases in addition to the FNO and 02, wherein the content of FNO is desirably in the range of 20 - 90 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. Suitable examples of inert gases which may be used in the above-mentioned CVD chamber cleaning gas composition include N2, He, Ne, Ar, Kr, Xe and Rn.
The F3NO-containing and FNO-containing gas compositions for cleaning reactors are, in particular, suitable for use in cleaning the interior of the chambers of CVD equipment. The gas compositions are generally suitable for removing depositions comprising a silicon-containing compound or compounds. Typical examples of the silicon-containing compounds include (1) compounds consisting essentially of silicon; (2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon; and (3) compounds comprising high melting point metal suicides . Etching Gas Compositions :
Further according to the third aspect of the invention, there is provided a first etching gas composition suitable for etching films of silicon-containing compounds, which is characterized by inclusion of F3NO. This first etching gas composition may comprise 02 and/or one or more inert gases in addition to the F3NO. The content of F3NO in the etching gas composition is desirably in the range of 5 - 70 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. According to the fourth aspect of the invention, there is further provided a second etching gas composition suitable for etching films of silicon-containing compounds, which is characterized by inclusion of FNO and 02 and wherein the content of FNO is in the range of 20 - 50 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. The content of the 02 is desirably in the range of 50 - 80 mol %.
The second etching gas composition may comprise an inert gas or gases in place of the 02, wherein the content of FNO is desirably in the range of 55 - 95 mol % per 100 mol % of the total quantity of the gas ingredients in the composition. Desirably, the content of said inert gas or gases is in the range of 5 - 45 mol %. Alternatively, the second etching gas composition may comprise an inert gas or gases in addition to the FNO and 02, wherein the content of FNO is desirably in the range of 20 - 90 mol % per 100 mol % of the total quantity of the gas ingredients in the composition.
Suitable examples of the inert gases which may be used in the above-mentioned etching gas compositions include N2, He, Ne, Ar, Kr, Xe and Rn.
Typical examples of the silicon-containing compounds which may be etched by the above etching gas compositions include:
(1) compounds consisting essentially of silicon; (2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon; and (3) compounds comprising high melting point metal suicides . Embodiments of the Invention
The gas compositions for removing deposits comprising silicon-containing compounds in CVD chambers and for etching film layers comprising silicon-containing compounds in accordance with the invention comprise specific fluorine- containing nitrogen compounds, or combinations thereof with other gas ingredients. These will be described in more detail.
CVD CHAMBER CLEANING GAS COMPOSITIONS:
The CVD chamber cleaning gas compositions according to the invention comprise F3NO (nitrosyl trifluoride) or mixtures thereof with other gas ingredients, or FNO (nitrosyl fluoride) or mixtures thereof with other gas ingredients . These will be explained below.
FaNO and mixtures thereof (the first cleaning gas compositions) The first chamber cleaning gas compositions of the invention are characterized by inclusion of F3NO, which may include further 02 or one or more inert gases, or both. The content of F3NO employed in the first chamber cleaning gas compositions desirably ranges from 5 to 70 mol %, preferably from 15 to 60 mol % per 100 mol % of the total quantity of the gas ingredients in the compositions .
In the case where the first chamber cleaning gas compositions comprise F3NO and 02, the content of F3NO desirably ranges from 5 to 40 mol %, preferably from 10 to 30 mol %, per 100 mol % of the total quantity of the gas ingredients in the compositions. The content of 02 desirably ranges from 60 to 95 mol %, preferably from 70 to 90 mol %.
In the case where the first chamber cleaning gas compositions comprise F3NO and one or more inert gases, the content of F3NO desirably ranges from 10 to 70 mol %, preferably from 20 to 60 mol %, per 100 mol % of the total quantity of the gas ingredients in the compositions . The content of said inert gas or gases desirably ranges from 30 to 90 mol %, preferably from 40 to 80 mol %. Further, in the case where the first chamber cleaning gas compositions comprise F3NO, 02 and one or more inert gases, the content of F3NO desirably ranges from 5 to 70 mol %, preferably from 15 to 60 mol %, per 100 mol % of the total quantity of the gas ingredients in the compositions. The content of 02 desirably ranges from 25 to 80 mol %, preferably from 30 to 70 mol %. The content of said inert gas or gases desirably ranges from 5 to 50 mol %, preferably from 5 to 30 mol %. Where the F3NO content used in the first chamber cleaning gas compositions falls within the above-mentioned ranges, it is possible to quickly remove the deposits on the surfaces of the interior of the CVD cambers. Where the cleaning gas compositions include 02 and/or inert gas(es) in the above- mentioned ranges, then the cleaning performance of the compositions are enhanced and improved.
In view of the chemical structure and physical and chemical properties of F3NO used in the chamber cleaning gas compositions of the invention, it is believed that the compound would have a short lifetime in the atmosphere and would have less impact on global warming. Therefore, only a very slight adverse effect on environment would be caused even if the chamber cleaning gas compositions were discharged into the atmosphere. Further, even when F3NO is decomposed or degraded during or after use in the cleaning process, it would emit little or no noxious gases, such as CF4, NF3 and the like, that have high global warming potential and have adverse environmental effects . Furthermore, since F3NO has a low boiling point of -87.6°C, it is present in the gas phase when it is used under the conditions employed in the production of semiconductors and other electronic devices. The gaseous F3NO or gaseous mixtures containing it may be handled easily in the chamber cleaning operation .
F3NO may be prepared, for example, by the below-formulated two-stage route, but the preparation is not limited to this route:
NF3 + N20 + 2SbF5 → NF20+Sb2F1:J + N2 NF20+Sb2Fxl " + 2NaF → F3N0 + 2NaSbF6 The inert gases which may be used in the invention include, for example, N2, He, Ne, Ar, Kr, Xe, and Rn. FNO-containing gas mixtures (the second cleaning gas compositions)
The second chamber cleaning gas compositions of the invention are characterized by inclusion of FNO in combination with 02 and/or one or more inert gases. In the case where the second chamber cleaning gas composition of the invention comprises FNO and 02, the content of FNO is desirably in the range of 20 - 50 mol %,and preferably 30 - 45 mol % per 100 mol % of the total quantity of the ingredients in the composition. The content of 02 is desirably in the range of 50 - 80 mol %, and preferably 55 - 70 mol %.
Further, in the case where the second chamber cleaning gas composition of the invention comprises FNO and an inert gas or gases, the content of FNO is desirably in the range of 55 - 95 mol %, and preferably 60 - 90 mol % per 100 mol % of the total quantity of the ingredients in the composition. The content of inert gas or gases is desirably in the range of 5 - 45 mol %, and preferably 10 - 40 mol %. Furthermore, in the case where the second chamber cleaning gas composition of the invention comprises FNO, 02 and an inert gas or gases , the content of FNO is desirably in the range of 20 - 90 mol %, and preferably 30 - 80 mol % per 100 mol % of the total quantity of the ingredients in the composition. The content of the inert gas or gases is desirably in the range of 5 - 50 mol %, and preferably 10 - 40 mol %.
Where the content of FNO, 02 and inert gas(es) used in the second chamber cleaning gas compositions falls within the above-mentioned ranges, it is possible to quickly remove the deposits on the surfaces of the interior of the CVD chambers.
In view of the chemical structure and physical and chemical properties of FNO, it is believed that the compound would have a short lifetime in the atmosphere and contribute less to global warming. Therefore, only a very slight adverse effect on environment would be caused if the chamber cleaning gas compositions were discharged into the atmosphere.
Further, even when FNO decomposes during use of the second cleaning gas composition in the cleaning step, it would emit little or no noxious gases, such as CF4, NF3 and the like, that have high global warming potential and have an adverse effect on the environment.
Furthermore, since FNO has a low boiling point of -59.9°C, it is present in the gas phase, when it is used under the conditions employed in the production of semiconductors and other electronic devices. Therefore, the gaseous FNO or gaseous mixtures containing it may be handled easily in the chamber cleaning operation. FNO may be prepared, for example, by the below-formulated route at a high yield rate, but the preparation is not limited thereto :
F2 + 2NO → 2FNO The inert gases which may be used in the invention include, for example, N2, He, Ne, Ar, Kr, Xe, and Rn. Other optional ingredients :
The cleaning gas compositions according to the invention may include any other suitable gas or gases unless they behave contrary to the objects of the invention. Examples of the optional gases which may be mentioned include 03, H2, F2, C1F3, BrF3 and the like. The proportions of the optional gases that can be present in the cleaning gas compositions are not critical, provided that the presence thereof in the cleaning gas compositions has no adverse effect on the purpose of the invention. The proportion of a specific optional gas or gases may be determined by some factors , such as the amount , thickness and chemical nature of the deposits on the interior of a reactor of, for example, a CVD apparatus to be cleaned. As used herein, the expression "to clean a chamber" or any other synonymous expression is intended to mean removal of the films deposited on the surfaces of the inner walls, jigs, pipings, etc. exposed to the inside of chamber for manufacturing semiconductors or other electronic devices. The above-mentioned gas compositions comprising the specific fluorine-containing nitrogen compounds, oxygen and other gases according to the invention may be used advantageously for cleaning CVD chambers, for example CVD equipment .
The target substances that are removed from the chamber by the fluorine-containing nitrogen compounds according to the invention may be any deposit comprising the aforementioned silicon-containing compounds that have accumulated on the surfaces of the inner walls of the CVD chamber, jigs, pipings and other parts in the CVD apparatus during operation of the CVD process. Typical examples of the silicon-containing compounds include:
(1) compounds consisting essentially of silicon,
(2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon, and
(3) compounds comprising high melting point metal suicides. Particular examples that may be mentioned include Si, Si02,
Si3N4 and high melting point metal suicides, such as WSi, and the like.
The material from which the CVD chambers to be cleaned by the chamber cleaning gas compositions of the present invention are prepared is not critical, and may be, for example, stainless steel, aluminum or alloys thereof.
The chamber cleaning gas compositions of the present invention can quickly remove the deposits on the surfaces of the inner walls of the CVD chamber, jigs, pipings or other parts in the CVD apparatus, while having no or little adverse effects, such as corrosion, erosion and pitting, on these chamber materials . Removal of the deposits comprising silicon-containing compounds and possibly traces of other substances present in the interior of the CVD chamber using the cleaning gas composition comprised of fluorine-containing nitrogen compounds of the invention may be conducted in any known convenient manner. Various dry cleaning techniques, for example, plasma cleaning, remote plasma cleaning and microwave cleaning techniques may be employed. Thus, by means of the chamber cleaning gas compositions according to the invention, the deposited silicon-containing compounds may be efficiently removed.
GAS COMPOSITIONS FOR ETCHING FILMS OF SILICON-CONTAINING COMPOUNDS :
The gas compositions for etching a thin film of silicon- containing compounds of the invention comprise either (a) F3NO or a mixture thereof or (b) FNO or a mixture of FNO. These etching gas compositions will be described below in more detail.
FaNO and mixtures thereof (the first etching gas compositions)
As mentioned hereinbefore, the first gas composition for etching a thin film of silicon-containing compounds according to the invention is characterized by inclusion of F3NO, which composition may comprise 02 and/or one or more inert gases in addition to the F3NO. The concentrations of F3NO, 02 and inert gases in the first etching gas composition are desirably in the same ranges as those for the aforementioned ingredients of the first chamber cleaning gas compositions. The first etching gas compositions containing the ingredients in the specified proportions can rapidly etch a thin film of silicon-containing compounds .
In view of its chemical structure and chemical and physical properties , the primary ingredient F3NO employed in the first etching gas compositions is believed to have a short lifetime in the atmosphere and would contribute less to global warming. Therefore, only a very slight adverse effect on environment would be caused, even if the etching gas compositions were discharged into the atmosphere.
Further, even when F3NO decomposes during use of the first etching gas composition in the etching process, it would emit little or no noxious gases, such as CF4, NF3 and the like, that have high global warming potential and adverse environmental effects.
Furthermore, because the first etching gas compositions can highly selectively attack the films to be processed or etched, it is feasible for them to be employed as substitutes for the conventional etchant gases, such as CF4, NF3 etc.
As inert gases that may be incorporated into the first etching gas compositions according to the invention, N2, He, Ne, Ar, Kr, Xe and Rn may be mentioned. FNO and mixtures thereof (the second etching gas compositions)
As mentioned hereinbefore, the second gas composition for etching a film layer or layers of silicon-containing compounds according to the invention is characterized by inclusion of FNO, which composition may comprise 02 and/or one or more inert gases in addition to the FNO. The contents of FNO, 02 and inert gases in the second etching gas composition are desirably in the same ranges as those for the ingredients of the second chamber cleaning gas compositions that were mentioned hereinbefore. The second etching gas compositions containing the ingredients in the specified proportions can rapidly etch a film layer or layers of silicon-containing compounds. Even when the primary ingredient FNO employed in the second etching gas compositions decomposes or degrades during or after use of the second etching gas composition in the etching process, it would emit little or no noxious gases, such as CF4, NF3 and the like that have high global warming potential and adverse environmental effects. In view of its chemical structure and chemical and physical properties, the FNO is believed to have a short lifetime in the atmosphere and contribute less to global warming. Therefore, only a very slight adverse effect on the environment would be caused, even if the etching gas compositions were discharged into the atmosphere .
Furthermore, because the second etching gas compositions can highly selectively attack the films to be processed or etched, it is feasible for them to be employed as substitutes for the conventional etchant gases, such as CF4, NF3? etc.
As inert gases that may be incorporated into the second etching gas compositions according to the invention, N2, He, Ne, Ar, Kr, Xe and Rn may be mentioned. Other optional ingredients :
The etching gas compositions according to the invention may include any other suitable gas or gases as long as they behave in accordance with the objects of the invention. Examples of optional gases which may be mentioned include 03, H2, F2, C1F3, BrF3 and the like. The proportions of the optional gases that can be present in the etching gas compositions are not critical, provided that their presence in the etching gas compositions has no adverse effect on the purpose of the invention.
The materials to be etched:
The materials to be etched with the etching gas compositions of the invention include a thin film comprising silicon-containing compounds. Typical examples which may be mentioned are at least one of:
(1) compounds consisting essentially of silicon,
(2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon, and
(3) compounds comprising high melting point metal suicides. Particular examples that may be mentioned include Si film, Si02 film, Si3N4 film and films of high melting point metal suicides, such as WSi, and the like.
Etching of the films comprising silicon-containing compounds by means of the etching gas compositions comprising fluorine-containing nitrogen compounds of the invention may be conducted in any known convenient manner. Various dry etching techniques, for example, plasma etching, reactive ion etching and microwave etching techniques may be employed. The conditions under which the present etching gas compositions are employed for etching may be similar to those suitable for application of the known etching techniques. Advantages achieved by the Invention: The chamber cleaning gas compositions of the invention show little or no tendency towards generation, during or after use in a cleaning step, of an effluent gas stream containing noxious compounds, such as CF4, NF3 or the like, that could have an effect on global warming. Use of the chamber cleaning gas compositions of the present invention has only a limited effect on the environment . The chamber cleaning gas compositions of the invention may be handled with ease, can quickly remove the films adhering to the interior of the CVD chamber, and have improved cleaning qualities compared to those of conventional cleaning gases.
Furthermore, the present gas compositions for etching silicon-containing films show little or no tendency towards generation, during use in an etching process, of an effluent gas stream containing noxious compounds, such as CF4, NF3 or the like, that would have an effect on global warming. Use of the etching gas compositions of the present invention has only a limited effect on the environment. The etching gas compositions according to the invention can efficiently etch silicon-containing films while ensuring high dimensional accuracy of the product semiconductor patterns; they also demonstrate excellent etching capabilities compared to those of conventional etchant gases . EXAMPLE The invention will be further illustrated in detail with reference to the following Examples which are not intended to be restrictive in any way to the scope of the invention. PREPARATION 1: SYNTHESIS OF F3NO A dried 200 ml "HASTELLOY"* reactor vessel was charged with 26 g (0.12 mol) of antimony pentafluoride(SbF5) followed by 14.2 g (0.2 mol) of nitrogen trifluoride(NF3) and 8.8 g (0.2 mol) of nitrous oxide(N20) . The mixture was allowed to react at 150°C for a period of 60 hours. The resulting product NF20+Sb2F1:L ~ was treated with 10 g (0.24 mol) of sodium fluoride (NaF) and, then the mixture was allowed to react at 210°C for a period of 20 hours. The reaction product was subjected to isolation and purification to yield 3.5 g (0.04 mol) of F3NO. The resulting product was analyzed by gas chromatography and FT-IR and identified to be F3NO thereby. The yield was 20% on the basis of the starting nitrogen trifluoride. (* a trade name of an alloy commercially available from Hayness Stellite Co.) PREPARATION 2: SYNTHESIS OF FNO A dried, 100 ml nickel reactor vessel was charged with 6.0 g (0.20 mol) of nitrogen monoxide followed with 1.34 liters of fluorine gas that had been diluted to 20 mol % (equal to 0.12 mol of F2) . The mixture was allowed to react at 30°C for one hour. The reaction products were subjected to isolation and purification to yield 8.8 g (0.18 mol) of FNO. The resulting product was analyzed by gas chromatography and FT-IR. The product compound was identified to be FNO thereby. The yield was 90% on the basis of the starting nitrogen monoxide. EXAMPLES 1 - 7 Chamber cleaning test :
Samples of F3NO as produced in the above PREPARATION 1 were mixed with oxygen or argon (Ar) in various proportions as shown in TABLE 1.
A sample of silicon wafer having an Si02 film deposited over the surface thereof was placed in a CVD chamber and subjected to a cleaning test using one of the gas mixtures shown in TABLE 1 , under the following cleaning conditions : a pressure of 110 Pa; an input Rf power of 290 W; and a total gas flow rate of 60 seem. The cleaning procedure under these conditions was performed for a period of 2 minutes . The results of cleaning performance for each of the test cleaning gas compositions are shown in TABLE 1 below. TABLE 1
Figure imgf000022_0001
EXAMPLES 8 - 13
Chamber cleaning test :
Samples of FNO as produced in the above PREPARATION 2 were mixed with oxygen or argon (Ar) in various proportions as shown in TABLE 2 and subjected to the Si02 film cleaning test under the same conditions as used in the previous Examples. The results are set forth in TABLE 2 below. TABLE 2
Figure imgf000023_0001
COMPARATIVE EXAMPLES 1 - 3
Chamber cleaning test with conventional cleaning gas compositions :
The cleaning test procedure in the previous EXAMPLES was substantially repeated using some conventional cleaning gas compositions as shown in TABLE 3. The results are set forth in TABLE 3.
TABLE 3
Figure imgf000023_0002
From the cleaning test results of the above Examples, the feasibility of the present etching gas compositions is proved beyond doubt.

Claims

1. A gas composition for cleaning the interior of CVD chambers, which comprises F3NO.
2. A gas composition for cleaning the interior of CVD chambers, which comprises F3NO and 02.
3. A gas composition for cleaning the interior of CVD chambers, which comprises F3NO, 02 and one or more inert gases.
4. A gas composition for cleaning the interior of CVD chambers, which comprises F3NO and one or more inert gases .
5. The gas composition for cleaning the interior of CVD chambers according to any one of the preceding claims 1 - 4, in which the content of said F3NO is in the range of 5 - 70 mol % per 100 mol % of the total content of the gas ingredients in said composition. .
6. A gas composition for cleaning the interior of CVD chambers, which comprises FNO and 02, the content of said FNO being in the range of 20 - 50 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
7. The gas composition for cleaning the interior of CVD chambers according to claim 6, in which the content of said 02 is in the range of 50 - 80 mol %.
8. A gas composition for cleaning the interior of CVD chambers, which comprises FNO and one or more inert gases, the content of said FNO being in the range of 55 - 95 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
9. The gas composition for cleaning the interior of CVD chambers according to claim 8, in which the content of said inert gas or gases is in the range of 5 - 45 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
10. A gas composition for cleaning the interior of CVD chambers, which comprises FNO, 02 and one or more inert gases, the content of said FNO being in the range of 20 - 90 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
11. The gas composition for cleaning the interior of CVD chambers according to any one of claims 3, 4, 5, 8, 9 and 10, in which said inert gas or gases are selected from the group consisting of N2, He, Ne, Ar, Kr, Xe and Rn.
12. The gas composition for cleaning the interior of CVD chambers according to any one of claims 1 - 11, in which the chamber to be cleaned is the CVD chamber.
13. The gas composition for cleaning the interior of CVD chambers according to any one of claims 1 - 12, which is to be used for removing a deposit consisting of a silicon containing- compound or compounds in the interior of said chambers .
14. The gas composition for cleaning the interior of CVD chambers according to claim 13, in which said silicon containing-compound or compounds are at least one selected from the group consisting of: (1) compounds consisting essentially of silicon, (2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon, and (3) compounds comprising high melting point metal suicides.
15. A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO.
16. A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO and 02.
17. A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO, 02 and an inert gas or gases.
18. A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO and an inert gas or gases .
19. The gas composition for etching a thin film comprising a silicon-containing compound or compounds according to any one of claims 15 - 18, in which the content of said F3NO is in the range of 5 - 70 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
20. A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises FNO and 02, the content of said FNO being in the range of 20 - 50 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
21. The gas composition for etching a thin film comprising a silicon-containing compound or compounds according to claim 20 in which the content of said Oz is in the range of 50 - 80 mol % .
22. A gas composition for etching a thin film comprising a silicon-containing compound or compounds which gas composition comprises FNO and one or more inert gases , the content of said FNO being in the range of 55 - 95 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
23. The gas composition for etching a thin film comprising a silicon-containing compound or compounds according to claim
22, in which the content of said inert gas or gases is in the range of 5 - 45 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
24. A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises FNO, 02 and one or more inert gases, the content of said FNO being in the range of 20 - 90 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
25. The gas composition for etching a thin film comprising a silicon-containing compound or compounds according to any one of claims 17, 18, 19, 22, 23 and 24, in which said inert gas or gases are selected from the group consisting of N2, He, Ne, Ar, Kr, Xe and Rn.
26. The gas composition for etching a thin film comprising a silicon-containing compound or compounds according to any one of claims 15 - 25, in which said silicon containing-compound or compounds are at least one selected from the group consisting of:
(1) compounds consisting essentially of silicon, (2) compounds consisting essentially of silicon and at least one of oxygen, nitrogen, fluorine and carbon, and (3) compounds comprising high melting point metal suicides.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004050936A3 (en) * 2002-11-30 2004-08-26 Infineon Technologies Ag Method for cleaning a process chamber
EP1542264A4 (en) * 2002-07-01 2007-03-28 Res Inst Innovative Tech Earth DEVICE FOR CHEMICAL VAPOR DEPOSITION (DCPV) PROCESS WITH FLUORIN GAS CLEANING SYSTEM, AND METHOD FOR CLEANING DCPV FLUORINE GAS DEVICE
US9683288B2 (en) 2010-04-23 2017-06-20 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and method of cleaning processing vessel
TWI700245B (en) * 2018-11-23 2020-08-01 南韓商韓國化學研究院 Preparation method of trifluoroamine oxide and method to increase yield of trifluoroamine oxide

Families Citing this family (258)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003144905A (en) * 2001-11-16 2003-05-20 Central Glass Co Ltd Gas cleaning method
JP4320389B2 (en) * 2003-02-28 2009-08-26 関東電化工業株式会社 CVD chamber cleaning method and cleaning gas used therefor
US20050082002A1 (en) * 2003-08-29 2005-04-21 Yuusuke Sato Method of cleaning a film-forming apparatus and film-forming apparatus
US7581549B2 (en) * 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
US20080236483A1 (en) * 2007-03-27 2008-10-02 Jun Sonobe Method for low temperature thermal cleaning
US20080236482A1 (en) * 2007-03-27 2008-10-02 Jun Sonobe Method for low temperature thermal cleaning
CN101646801B (en) * 2007-03-27 2011-11-16 乔治洛德方法研究和开发液化空气有限公司 Method for low temperature thermal cleaning
US8308871B2 (en) * 2008-11-26 2012-11-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Thermal cleaning gas production and supply system
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
JP2014170786A (en) * 2013-03-01 2014-09-18 Hitachi Kokusai Electric Inc Cleaning method, method of manufacturing semiconductor device, substrate processing device, and program
JP6139986B2 (en) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 Etching method
JP5715717B2 (en) * 2014-02-03 2015-05-13 株式会社日立国際電気 Semiconductor device manufacturing method, cleaning method, and substrate processing apparatus
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
TWI815813B (en) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 Showerhead assembly for distributing a gas within a reaction chamber
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
TWI791689B (en) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 Apparatus including a clean mini environment
JP7214724B2 (en) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． Storage device for storing wafer cassettes used in batch furnaces
US10529581B2 (en) 2017-12-29 2020-01-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (en) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
KR102695659B1 (en) 2018-01-19 2024-08-14 에이에스엠 아이피 홀딩 비.브이. Method for depositing a gap filling layer by plasma assisted deposition
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
KR102600229B1 (en) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. Substrate supporting device, substrate processing apparatus including the same and substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI871083B (en) 2018-06-27 2025-01-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclic deposition processes for forming metal-containing material
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (en) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
CN110970344B (en) 2018-10-01 2024-10-25 Asmip控股有限公司 Substrate holding device, system including the same and method of using the same
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (en) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR102010466B1 (en) * 2018-11-23 2019-08-13 한국화학연구원 The advanced preparation method and apparatus for trifluoroamine oxide
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (en) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method and system for forming device structures using selective deposition of gallium nitride - Patents.com
US20200203127A1 (en) 2018-12-20 2020-06-25 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Systems and methods for storage and supply of f3no-free fno gases and f3no-free fno gas mixtures for semiconductor processes
TWI866480B (en) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
TWI845607B (en) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
TWI873122B (en) 2019-02-20 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
TWI842826B (en) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
KR102858005B1 (en) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
KR102762833B1 (en) 2019-03-08 2025-02-04 에이에스엠 아이피 홀딩 비.브이. STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door openers and substrate processing equipment provided with door openers
KR102809999B1 (en) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR102897355B1 (en) 2019-04-19 2025-12-08 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR102929471B1 (en) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR102929472B1 (en) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP7598201B2 (en) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
JP7612342B2 (en) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR102918757B1 (en) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. Method for cleaning quartz epitaxial chambers
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
KR102911421B1 (en) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646B (en) 2019-07-10 2026-02-10 Asmip私人控股有限公司 Substrate support assembly and substrate processing apparatus including the thereof
KR102895115B1 (en) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR102860110B1 (en) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
TWI826704B (en) 2019-07-17 2023-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR102903090B1 (en) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. Method of Forming Topology-Controlled Amorphous Carbon Polymer Film
CN112309843B (en) 2019-07-29 2026-01-23 Asmip私人控股有限公司 Selective deposition method for achieving high dopant incorporation
CN112309899B (en) 2019-07-30 2025-11-14 Asmip私人控股有限公司 Substrate processing equipment
CN112309900B (en) 2019-07-30 2025-11-04 Asmip私人控股有限公司 Substrate processing equipment
KR20210015655A (en) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (en) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Liquid level sensor for a chemical source vessel
KR20210018761A (en) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. heater assembly including cooling apparatus and method of using same
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP7810514B2 (en) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー Film-forming raw material mixed gas generating device and film-forming device
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR102928101B1 (en) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR102868968B1 (en) 2019-09-03 2025-10-10 에이에스엠 아이피 홀딩 비.브이. Methods and apparatus for depositing a chalcogenide film and structures including the film
KR102806450B1 (en) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR102733104B1 (en) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film through cyclic plasma enhanced deposition process
KR102948143B1 (en) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. Reactor system including a gas distribution assembly for use with activated species and method of using same
TW202128273A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber
TWI846953B (en) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TWI846966B (en) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (en) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (en) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (en) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
CN112951697B (en) 2019-11-26 2025-07-29 Asmip私人控股有限公司 Substrate processing apparatus
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
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JP7527928B2 (en) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR102943768B1 (en) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
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US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (en) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. Method of forming high aspect ratio features
KR102675856B1 (en) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
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TW202513845A (en) 2020-02-03 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Semiconductor structures and methods for forming the same
KR20210100010A (en) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (en) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus including light receiving device and calibration method of light receiving device
KR20210103953A (en) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. Gas distribution assembly and method of using same
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (en) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 System dedicated for parts cleaning
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KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR102775390B1 (en) 2020-03-12 2025-02-28 에이에스엠 아이피 홀딩 비.브이. Method for Fabricating Layer Structure Having Target Topological Profile
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (en) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TWI887376B (en) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for manufacturing semiconductor device
TWI888525B (en) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
KR20210127620A (en) 2020-04-13 2021-10-22 에이에스엠 아이피 홀딩 비.브이. method of forming a nitrogen-containing carbon film and system for performing the method
KR20210128343A (en) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102901748B1 (en) 2020-04-21 2025-12-17 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
CN113555279A (en) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 Methods of forming vanadium nitride-containing layers and structures comprising the same
TW202539998A (en) 2020-04-24 2025-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Compositions and vessels including vanadium compounds, and methods and systems for stabilizing vanadium compounds
KR102866804B1 (en) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. Vertical batch furnace assembly comprising a cooling gas supply
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR102934380B1 (en) 2020-04-24 2026-03-05 에이에스엠 아이피 홀딩 비.브이. Methods of forming structures including vanadium boride and vanadium phosphide layers
KR102783898B1 (en) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
JP7726664B2 (en) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing system for processing a substrate
KR20210137395A (en) 2020-05-07 2021-11-17 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals
JP7736446B2 (en) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー Reactor system with tuned circuit
KR102788543B1 (en) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR102936676B1 (en) 2020-05-15 2026-03-10 에이에스엠 아이피 홀딩 비.브이. Methods for silicon germanium uniformity control using multiple precursors
KR102905441B1 (en) 2020-05-19 2025-12-30 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145079A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Flange and apparatus for processing substrates
KR102795476B1 (en) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TWI873343B (en) 2020-05-22 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Reaction system for forming thin film on substrate
KR20210146802A (en) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. Method for depositing boron and gallium containing silicon germanium layers
TWI876048B (en) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202212620A (en) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate
KR20210156219A (en) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. Method for depositing boron containing silicon germanium layers
TWI908816B (en) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
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KR102915124B1 (en) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (en) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for cleaning a substrate, method for selectively depositing, and reaction system
TW202534193A (en) 2020-08-26 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming metal silicon oxide layer and metal silicon oxynitride layer
TWI911265B (en) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming patterned structures, method of manipulating mechanical property, and device structure
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (en) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. Silicon oxide deposition method
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (en) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Semiconductor processing method
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (en) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. Deposition method and an apparatus for depositing a silicon-containing material
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KR102493899B1 (en) * 2020-10-13 2023-01-30 에스케이스페셜티 주식회사 The preparation method for trifluoroamine oxide including the reuse of SbF5
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KR102855834B1 (en) 2020-10-14 2025-09-04 에이에스엠 아이피 홀딩 비.브이. Method of Depositing Material on Stepped Structure
KR102873665B1 (en) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat
TW202217037A (en) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
TW202229620A (en) 2020-11-12 2022-08-01 特文特大學 Deposition system, method for controlling reaction condition, method for depositing
TW202229795A (en) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 A substrate processing apparatus with an injector
TW202235649A (en) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for filling a gap and related systems and devices
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KR20220077875A (en) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. Cleaning fixture for showerhead assemblies
KR102594634B1 (en) * 2020-12-09 2023-10-25 에스케이스페셜티 주식회사 Etching Method of Silicon-containing Film and Manufacturing Method of Semiconductor Device including the Same
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
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WO2022133019A1 (en) * 2020-12-18 2022-06-23 Phillips 66 Company In situ electrolyte additives for batteries
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KR20220093499A (en) * 2020-12-28 2022-07-05 에스케이스페셜티 주식회사 Dry cleaning method of a semiconductor and display chemical vapor deposition chamber using F3NO gas
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
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USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
KR102704738B1 (en) 2022-01-21 2024-09-06 에스케이스페셜티 주식회사 Apparatus for producing trifluoroamine oxide and Method for producing trifluoroamine oxide
KR20250061354A (en) * 2023-10-27 2025-05-08 에스케이스페셜티 주식회사 Method for etching silicon-containing film and preparing method of semiconductor devices including the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341293A (en) 1963-04-26 1967-09-12 Allied Chem Preparation of fluoro compounds
JPH0426116A (en) * 1990-05-22 1992-01-29 Tokai Univ Substrate oxide etching method and substrate cleaning method
JPH05291203A (en) * 1992-04-10 1993-11-05 Sony Corp Method of forming aluminum pattern
JPH0625859A (en) * 1992-07-10 1994-02-01 Seiko Epson Corp Cvd film forming device and plasma cleaning method
JPH07273088A (en) * 1994-03-29 1995-10-20 Kanto Denka Kogyo Co Ltd Cleaning gas composition
WO1999067817A1 (en) 1998-06-22 1999-12-29 Applied Materials, Inc. Silicon trench etching using silicon-containing precursors to reduce or avoid mask erosion
JP2000100749A (en) * 1998-09-25 2000-04-07 Mitsubishi Electric Corp Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3554699A (en) * 1960-12-13 1971-01-12 Int Minerals & Chem Corp Nitrosyl trifluoride
US3428540A (en) * 1962-03-09 1969-02-18 Allied Chem Process for making trifluoroamine oxide
US3392099A (en) * 1962-03-09 1968-07-09 Allied Chem Production of fluoro compounds
US3323866A (en) * 1962-07-23 1967-06-06 Allied Chem Synthesis of fluoro compounds
GB1054330A (en) * 1962-08-15
US3306834A (en) * 1963-04-26 1967-02-28 Allied Chem Fluorine compound manufacture
US3507717A (en) * 1965-04-02 1970-04-21 North American Rockwell Inhibited nitrogen tetroxide with fluorine-containing oxidizer
US4536252A (en) * 1985-02-07 1985-08-20 The United States Of America As Represented By The Secretary Of The Army Laser-induced production of nitrosyl fluoride for etching of semiconductor surfaces
US4937094A (en) * 1988-05-26 1990-06-26 Energy Conversion Devices, Inc. Method of creating a high flux of activated species for reaction with a remotely located substrate
US4996035A (en) * 1989-02-27 1991-02-26 Mallinckrodt, Inc. Preparation of nitrosyl fluoride
US5445712A (en) * 1992-03-25 1995-08-29 Sony Corporation Dry etching method
JPH05299391A (en) * 1992-04-16 1993-11-12 Sony Corp Dry etching method
JP3109253B2 (en) * 1992-06-29 2000-11-13 ソニー株式会社 Dry etching method
US5534069A (en) * 1992-07-23 1996-07-09 Canon Kabushiki Kaisha Method of treating active material
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341293A (en) 1963-04-26 1967-09-12 Allied Chem Preparation of fluoro compounds
JPH0426116A (en) * 1990-05-22 1992-01-29 Tokai Univ Substrate oxide etching method and substrate cleaning method
JPH05291203A (en) * 1992-04-10 1993-11-05 Sony Corp Method of forming aluminum pattern
JPH0625859A (en) * 1992-07-10 1994-02-01 Seiko Epson Corp Cvd film forming device and plasma cleaning method
JPH07273088A (en) * 1994-03-29 1995-10-20 Kanto Denka Kogyo Co Ltd Cleaning gas composition
WO1999067817A1 (en) 1998-06-22 1999-12-29 Applied Materials, Inc. Silicon trench etching using silicon-containing precursors to reduce or avoid mask erosion
JP2000100749A (en) * 1998-09-25 2000-04-07 Mitsubishi Electric Corp Semiconductor device and method of manufacturing semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1320875A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1542264A4 (en) * 2002-07-01 2007-03-28 Res Inst Innovative Tech Earth DEVICE FOR CHEMICAL VAPOR DEPOSITION (DCPV) PROCESS WITH FLUORIN GAS CLEANING SYSTEM, AND METHOD FOR CLEANING DCPV FLUORINE GAS DEVICE
WO2004050936A3 (en) * 2002-11-30 2004-08-26 Infineon Technologies Ag Method for cleaning a process chamber
US9683288B2 (en) 2010-04-23 2017-06-20 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and method of cleaning processing vessel
TWI700245B (en) * 2018-11-23 2020-08-01 南韓商韓國化學研究院 Preparation method of trifluoroamine oxide and method to increase yield of trifluoroamine oxide
US10934167B2 (en) 2018-11-23 2021-03-02 Korea Research Institute Of Chemical Technology Preparation method of trifluoroamine oxide

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EP2372753A1 (en) 2011-10-05
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