WO2003076330A3 - Silicon carbide microelectromechanical devices with electronic circuitry - Google Patents

Silicon carbide microelectromechanical devices with electronic circuitry Download PDF

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Publication number
WO2003076330A3
WO2003076330A3 PCT/US2003/006972 US0306972W WO03076330A3 WO 2003076330 A3 WO2003076330 A3 WO 2003076330A3 US 0306972 W US0306972 W US 0306972W WO 03076330 A3 WO03076330 A3 WO 03076330A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
electronic circuitry
circuitry
etch rate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/006972
Other languages
French (fr)
Other versions
WO2003076330A2 (en
Inventor
Kevin Kornegay
Andrew Ryan Atwell
Mihaela Balseanu
Jon Duster
Eskinder Hailu
Ce Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cornell Research Foundation Inc
Original Assignee
Cornell Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell Research Foundation Inc filed Critical Cornell Research Foundation Inc
Priority to AU2003231965A priority Critical patent/AU2003231965A1/en
Priority to EP03744229A priority patent/EP1487738B1/en
Priority to JP2003574560A priority patent/JP2005519778A/en
Priority to DE60323344T priority patent/DE60323344D1/en
Publication of WO2003076330A2 publication Critical patent/WO2003076330A2/en
Publication of WO2003076330A3 publication Critical patent/WO2003076330A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Ceramic Products (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.
PCT/US2003/006972 2002-03-08 2003-03-07 Silicon carbide microelectromechanical devices with electronic circuitry Ceased WO2003076330A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003231965A AU2003231965A1 (en) 2002-03-08 2003-03-07 Silicon carbide microelectromechanical devices with electronic circuitry
EP03744229A EP1487738B1 (en) 2002-03-08 2003-03-07 Silicon carbide microelectromechanical devices with electronic circuitry
JP2003574560A JP2005519778A (en) 2002-03-08 2003-03-07 Silicon carbide microelectromechanical device with electronic circuit
DE60323344T DE60323344D1 (en) 2002-03-08 2003-03-07 MICROELECTROMECHANICAL SILICON CARBIDE COMPONENTS WITH ELECTRONIC CIRCUITS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36261802P 2002-03-08 2002-03-08
US60/362,618 2002-03-08

Publications (2)

Publication Number Publication Date
WO2003076330A2 WO2003076330A2 (en) 2003-09-18
WO2003076330A3 true WO2003076330A3 (en) 2004-08-19

Family

ID=27805204

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/006972 Ceased WO2003076330A2 (en) 2002-03-08 2003-03-07 Silicon carbide microelectromechanical devices with electronic circuitry

Country Status (8)

Country Link
US (2) US7170141B2 (en)
EP (1) EP1487738B1 (en)
JP (1) JP2005519778A (en)
CN (1) CN1652995A (en)
AT (1) ATE407097T1 (en)
AU (1) AU2003231965A1 (en)
DE (1) DE60323344D1 (en)
WO (1) WO2003076330A2 (en)

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US8154092B2 (en) 2004-08-09 2012-04-10 Case Western Reserve University Silicon carbide MEMS structures and methods of forming the same
US7616013B2 (en) * 2004-11-11 2009-11-10 Brigham Young University Micromechanical positional state sensing apparatus method and system
ES2299298B1 (en) * 2005-07-21 2009-04-01 Universitat Autonoma De Barcelona PROCEDURE FOR MONOLITIC INTEGRATION OF HIGH-MECHANICAL MATERIALS WITH INTEGRATED CIRCUITS FOR MEMS / NEMS APPLICATIONS.
US20070287301A1 (en) * 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7601651B2 (en) * 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
US8044755B2 (en) * 2008-04-09 2011-10-25 National Semiconductor Corporation MEMS power inductor
US7705411B2 (en) * 2008-04-09 2010-04-27 National Semiconductor Corporation MEMS-topped integrated circuit with a stress relief layer
US8897470B2 (en) * 2009-07-31 2014-11-25 Macronix International Co., Ltd. Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unit
WO2012075272A2 (en) 2010-12-01 2012-06-07 Cornell University Structures and methods for electrically and mechanically linked monolithically integrated transistor and mems/nems devices
US8754421B2 (en) * 2012-02-24 2014-06-17 Raytheon Company Method for processing semiconductors using a combination of electron beam and optical lithography
JP6712650B2 (en) * 2016-12-14 2020-06-24 株式会社日立製作所 Semiconductor device, manufacturing method thereof, and sensor

Citations (1)

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Also Published As

Publication number Publication date
WO2003076330A2 (en) 2003-09-18
JP2005519778A (en) 2005-07-07
US7615788B2 (en) 2009-11-10
DE60323344D1 (en) 2008-10-16
AU2003231965A1 (en) 2003-09-22
CN1652995A (en) 2005-08-10
US20040077164A1 (en) 2004-04-22
US20080093605A1 (en) 2008-04-24
EP1487738A2 (en) 2004-12-22
US7170141B2 (en) 2007-01-30
EP1487738B1 (en) 2008-09-03
ATE407097T1 (en) 2008-09-15
AU2003231965A8 (en) 2003-09-22

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