WO2003098754A3 - Tuneable laser - Google Patents

Tuneable laser Download PDF

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Publication number
WO2003098754A3
WO2003098754A3 PCT/GB2003/002108 GB0302108W WO03098754A3 WO 2003098754 A3 WO2003098754 A3 WO 2003098754A3 GB 0302108 W GB0302108 W GB 0302108W WO 03098754 A3 WO03098754 A3 WO 03098754A3
Authority
WO
WIPO (PCT)
Prior art keywords
tuneable
quantum dots
section
semiconductor material
tuneable laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2003/002108
Other languages
French (fr)
Other versions
WO2003098754A2 (en
Inventor
Nickolay Zakhleniuk
Anthony James Holden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0211039A external-priority patent/GB2388708B/en
Priority claimed from GB0211038A external-priority patent/GB2388707B/en
Priority claimed from GB0211037A external-priority patent/GB2388706A/en
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Priority to US10/514,666 priority Critical patent/US20050259699A1/en
Priority to DE60306770T priority patent/DE60306770D1/en
Priority to EP03727672A priority patent/EP1504504B8/en
Priority to AU2003234002A priority patent/AU2003234002A1/en
Publication of WO2003098754A2 publication Critical patent/WO2003098754A2/en
Publication of WO2003098754A3 publication Critical patent/WO2003098754A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Lasers (AREA)

Abstract

A tuneable laser including a light creating section to generate light and a tuneable section formed of a semiconductor material which utilises the current injection free electron plasma effect to achieve a change in the refractive index of the material, wherein the tuneable section has a plurality of quantum dots having enhanced polarisability compared to the bulk semiconductor material surrounding the quantum dots.
PCT/GB2003/002108 2002-05-15 2003-05-15 Tuneable laser Ceased WO2003098754A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/514,666 US20050259699A1 (en) 2002-05-15 2003-05-15 Tuneable laser
DE60306770T DE60306770D1 (en) 2002-05-15 2003-05-15 TUNABLE LASER
EP03727672A EP1504504B8 (en) 2002-05-15 2003-05-15 Tuneable laser
AU2003234002A AU2003234002A1 (en) 2002-05-15 2003-05-15 Tuneable laser

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0211039A GB2388708B (en) 2002-05-15 2002-05-15 Tunable laser
GB0211038.5 2002-05-15
GB0211037.7 2002-05-15
GB0211038A GB2388707B (en) 2002-05-15 2002-05-15 Tunable laser
GB0211039.3 2002-05-15
GB0211037A GB2388706A (en) 2002-05-15 2002-05-15 Tunable laser

Publications (2)

Publication Number Publication Date
WO2003098754A2 WO2003098754A2 (en) 2003-11-27
WO2003098754A3 true WO2003098754A3 (en) 2004-06-17

Family

ID=29553850

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/GB2003/002108 Ceased WO2003098754A2 (en) 2002-05-15 2003-05-15 Tuneable laser
PCT/GB2003/002111 Ceased WO2003098755A2 (en) 2002-05-15 2003-05-15 Tuneable laser

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/002111 Ceased WO2003098755A2 (en) 2002-05-15 2003-05-15 Tuneable laser

Country Status (6)

Country Link
US (2) US20050271089A1 (en)
EP (2) EP1504505A2 (en)
AT (1) ATE333157T1 (en)
AU (2) AU2003234002A1 (en)
DE (1) DE60306770D1 (en)
WO (2) WO2003098754A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243019A (en) * 2006-03-10 2007-09-20 Fujitsu Ltd Optical semiconductor device
GB0805786D0 (en) * 2008-03-31 2008-04-30 Filtronic Plc Methods of modulating a quantum dot laser and a multisection dot laser
RU2478243C1 (en) * 2011-11-11 2013-03-27 Учреждение Российской академии наук Институт прикладной физики РАН Frequency-tuned far-infrared and terahertz coherent source on semiconductor nanoheterostructure
EP3470912B1 (en) * 2017-10-10 2022-02-02 Samsung Electronics Co., Ltd. Quantum dot light modulator and apparatus including the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467781A2 (en) * 1990-07-19 1992-01-22 Kokusai Denshin Denwa Co., Ltd A semiconductor optical element

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155981A (en) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor light-emitting element
FR2655434B1 (en) * 1989-12-05 1992-02-28 Thomson Csf OPTICAL DEVICE WITH QUANTUM WELLS AND METHOD FOR PRODUCING THE SAME.
JP3195159B2 (en) * 1993-11-25 2001-08-06 株式会社東芝 Optical semiconductor device
FR2728399B1 (en) * 1994-12-20 1997-03-14 Bouadma Nouredine LASER COMPONENT WITH BRAGG REFLECTOR IN ORGANIC MATERIAL AND METHOD FOR THE PRODUCTION THEREOF
JPH09222588A (en) * 1996-02-15 1997-08-26 Fujitsu Ltd Optical semiconductor device
JP3033517B2 (en) * 1997-04-17 2000-04-17 日本電気株式会社 Semiconductor tunable laser
JP3866836B2 (en) * 1997-08-14 2007-01-10 富士通株式会社 Nonlinear optical device
US6005707A (en) * 1997-11-21 1999-12-21 Lucent Technologies Inc. Optical devices comprising polymer-dispersed crystalline materials
US5909614A (en) * 1997-12-08 1999-06-01 Krivoshlykov; Sergei G. Method of improving performance of semiconductor light emitting device
US6822982B2 (en) * 2001-09-28 2004-11-23 The Furukawa Electric Co., Ltd. Device and method for providing a tunable semiconductor laser
EP1485975A2 (en) * 2002-03-19 2004-12-15 Bookham Technology PLC Tunable laser
GB0206441D0 (en) * 2002-03-19 2002-05-01 Bookham Technology Plc Tuneable laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467781A2 (en) * 1990-07-19 1992-01-22 Kokusai Denshin Denwa Co., Ltd A semiconductor optical element

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
ALLEN C N ET AL: "INAS SELF-ASSEMBLED QUANTUM-DOT LASERS GROWN ON (100) INP", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 80, no. 19, 13 May 2002 (2002-05-13), pages 3629 - 3631, XP001123385, ISSN: 0003-6951 *
GRIESINGER U A ET AL: "REALIZATION OF DOT DFB LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 8, no. 5, 1 May 1996 (1996-05-01), pages 587 - 589, XP000589249, ISSN: 1041-1135 *
HEINRICHSDORFF F ET AL: "ROOM-TEMPERATURE CONTINUOUS-WAVE LASING FROM STACKED INAS/GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 71, no. 1, 7 July 1997 (1997-07-07), pages 22 - 24, XP000694849, ISSN: 0003-6951 *
KAMP M ET AL: "InGaAs/AlGaAs quantum dot DFB lasers operating up to 213 DEG C", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 35, no. 23, 11 November 1999 (1999-11-11), pages 2036 - 2037, XP006012929, ISSN: 0013-5194 *
KIRSTAEDTER N ET AL: "LOW THRESHOLD, LARGE TO INJECTION LASER EMISSION FROM (INGA)AS QUANTUM DOTS", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 30, no. 17, 18 August 1994 (1994-08-18), pages 1416 - 1417, XP000476036, ISSN: 0013-5194 *
LESTER L F ET AL: "OPTICAL CHARACTERISTICS OF 1.24-MUM INAS QUANTUM-DOT LASER DIODES", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 8, August 1999 (1999-08-01), pages 931 - 933, XP000860954, ISSN: 1041-1135 *
MURATA S ET AL: "SPECTRAL CHARACTERISTICS FOR A 1.5 MUM DBR LASER WITH FREQUENCY-TUNING REGION", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. QE-23, no. 6, 1 June 1987 (1987-06-01), pages 835 - 838, XP000705809, ISSN: 0018-9197 *

Also Published As

Publication number Publication date
EP1504504B8 (en) 2006-10-04
EP1504504B1 (en) 2006-07-12
AU2003234004A8 (en) 2003-12-02
AU2003234002A1 (en) 2003-12-02
AU2003234002A8 (en) 2003-12-02
WO2003098755A2 (en) 2003-11-27
EP1504504A2 (en) 2005-02-09
US20050271089A1 (en) 2005-12-08
ATE333157T1 (en) 2006-08-15
EP1504505A2 (en) 2005-02-09
WO2003098754A2 (en) 2003-11-27
US20050259699A1 (en) 2005-11-24
WO2003098755A3 (en) 2004-09-10
AU2003234004A1 (en) 2003-12-02
DE60306770D1 (en) 2006-08-24

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