WO2003106734A3 - METALLIZATION - Google Patents

METALLIZATION Download PDF

Info

Publication number
WO2003106734A3
WO2003106734A3 PCT/GB2003/002613 GB0302613W WO03106734A3 WO 2003106734 A3 WO2003106734 A3 WO 2003106734A3 GB 0302613 W GB0302613 W GB 0302613W WO 03106734 A3 WO03106734 A3 WO 03106734A3
Authority
WO
WIPO (PCT)
Prior art keywords
organometallic compounds
relates
photosensitive organometallic
platinum
2ptc8
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2003/002613
Other languages
French (fr)
Other versions
WO2003106734A2 (en
Inventor
James Thomson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Dundee
Original Assignee
University of Dundee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Dundee filed Critical University of Dundee
Priority to JP2004513537A priority Critical patent/JP2005530043A/en
Priority to AT03732723T priority patent/ATE445030T1/en
Priority to DE60329598T priority patent/DE60329598D1/en
Priority to EP03732723A priority patent/EP1520060B1/en
Priority to AU2003240108A priority patent/AU2003240108A1/en
Priority to US10/518,952 priority patent/US7410900B2/en
Publication of WO2003106734A2 publication Critical patent/WO2003106734A2/en
Publication of WO2003106734A3 publication Critical patent/WO2003106734A3/en
Priority to IL16582704A priority patent/IL165827A0/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123—Spraying molten metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Apparatus For Disinfection Or Sterilisation (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

L'invention concerne des composés organométalliques photosensibles utilisés dans la production de dépôts métalliques. L'invention concerne, en particulier, des composés organométalliques photosensibles tels que du platine bis-(perfluoropropyl)-1,5-cyclooctadiène (II) (par exemple (C3F7,)2PtC8,H12) qui, lors de l'exposition à des radiations UV et d'un processus de réduction, forme un dépôt de métal platine tel qu'une couche mince </= TYPE FEUILLE >/= sensiblement continue ou une ligne sensiblement étroite capable de conduction électrique.The invention relates to photosensitive organometallic compounds used in the production of metallic deposits. The invention relates in particular to photosensitive organometallic compounds such as platinum bis- (perfluoropropyl) -1,5-cyclooctadiene (II) (for example (C3F7,) 2PtC8, H12) which, upon exposure to UV radiation and a reduction process, forms a platinum metal deposit such as a thin layer </ = SHEET TYPE> / = substantially continuous or a substantially narrow line capable of electrical conduction.

PCT/GB2003/002613 2002-06-18 2003-06-18 Metallisation Ceased WO2003106734A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004513537A JP2005530043A (en) 2002-06-18 2003-06-18 Metallization
AT03732723T ATE445030T1 (en) 2002-06-18 2003-06-18 METALLIZATION
DE60329598T DE60329598D1 (en) 2002-06-18 2003-06-18 METALLISATION
EP03732723A EP1520060B1 (en) 2002-06-18 2003-06-18 Metallisation
AU2003240108A AU2003240108A1 (en) 2002-06-18 2003-06-18 Metallisation
US10/518,952 US7410900B2 (en) 2002-06-18 2003-06-18 Metallisation
IL16582704A IL165827A0 (en) 2002-06-18 2004-12-16 Metallisation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0213925.1A GB0213925D0 (en) 2002-06-18 2002-06-18 Metallisation
GB0213925.1 2002-06-18

Publications (2)

Publication Number Publication Date
WO2003106734A2 WO2003106734A2 (en) 2003-12-24
WO2003106734A3 true WO2003106734A3 (en) 2004-04-08

Family

ID=9938751

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/002613 Ceased WO2003106734A2 (en) 2002-06-18 2003-06-18 Metallisation

Country Status (10)

Country Link
US (1) US7410900B2 (en)
EP (1) EP1520060B1 (en)
JP (1) JP2005530043A (en)
CN (1) CN1675407A (en)
AT (1) ATE445030T1 (en)
AU (1) AU2003240108A1 (en)
DE (1) DE60329598D1 (en)
GB (1) GB0213925D0 (en)
IL (1) IL165827A0 (en)
WO (1) WO2003106734A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010059174A1 (en) * 2008-08-07 2010-05-27 Pryog, Llc Metal compositions and methods of making same
FR2900765B1 (en) * 2006-05-04 2008-10-10 Commissariat Energie Atomique METHOD OF MAKING A TRANSISTOR GRID COMPRISING A DECOMPOSITION OF PRECURSOR MATERIAL IN AT LEAST ONE METALLIC MATERIAL USING AT LEAST ONE ELECTRON BEAM
US7482289B2 (en) * 2006-08-25 2009-01-27 Battelle Memorial Institute Methods and apparatus for depositing tantalum metal films to surfaces and substrates
EP3359548B1 (en) 2015-09-29 2020-12-23 Pryog, LLC Metal compositions and methods of making same
KR102627456B1 (en) 2015-12-21 2024-01-19 삼성전자주식회사 Tantalum compound and methods of forming thin film and integrated circuit device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
FR2643775A1 (en) * 1989-02-24 1990-08-31 Ramy Jean Pierre Process for producing electrically conductive lines on an insulating substrate and ultrahigh frequency circuit comprising its application
EP0391314A2 (en) * 1989-04-05 1990-10-10 Matsushita Electric Industrial Co., Ltd. Method for patterning on a substrate
EP0493709A2 (en) * 1990-12-29 1992-07-08 ABBPATENT GmbH Process for totally or partially coating with a gold layer
WO1996029726A1 (en) * 1995-03-17 1996-09-26 Symetrix Corporation Uv radiation process for making electronic devices having low-leakage-current and low-polarization fatigue

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534312A (en) * 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
IE980461A1 (en) * 1998-06-15 2000-05-03 Univ Cork Method for selective activation and metallisation of materials
US6348239B1 (en) * 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6248658B1 (en) * 1999-01-13 2001-06-19 Advanced Micro Devices, Inc. Method of forming submicron-dimensioned metal patterns

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
FR2643775A1 (en) * 1989-02-24 1990-08-31 Ramy Jean Pierre Process for producing electrically conductive lines on an insulating substrate and ultrahigh frequency circuit comprising its application
EP0391314A2 (en) * 1989-04-05 1990-10-10 Matsushita Electric Industrial Co., Ltd. Method for patterning on a substrate
EP0493709A2 (en) * 1990-12-29 1992-07-08 ABBPATENT GmbH Process for totally or partially coating with a gold layer
WO1996029726A1 (en) * 1995-03-17 1996-09-26 Symetrix Corporation Uv radiation process for making electronic devices having low-leakage-current and low-polarization fatigue

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
BRUNE, HANS ALBERT ET AL: "Photochemical reactivity of substituted [.eta.2- bis(diphenylstibino)methane]bis(phenyl)platinum(II) compounds", JOURNAL OF ORGANOMETALLIC CHEMISTRY (1989), 371(1), 113-20, XP002268054 *
CHAUDHURY, N. ET AL: "Preparation and electronic spectra of some alkyl- and aryl(2,2'- bipyridine)platinum(II) complexes", JOURNAL OF ORGANOMETALLIC CHEMISTRY (1975), 84(1), 105-15, XP002268055 *
CLARK, H. C. ET AL: "Reactions of (.pi.-1,5-cyclooctadiene)organoplatinum(II) compounds and th synthesis of perfluoroalkylplatinum complexes", JOURNAL OF ORGANOMETALLIC CHEMISTRY (1973), 59, 411-28, XP002268048 *
DEACON, G. B. ET AL: "Preparation and ligand displacement reactions of diene(polyfluorophenyl)platinum(II) complexes", JOURNAL OF ORGANOMETALLIC CHEMISTRY (1987), 322(2), 257-68, XP002268050 *
ESPINET, P. ET AL: "3,5-dichlorotrifluorophenyl complexes, aryl derivatives with simple 19F NMR structural probes. The synthesis of general precursors for Pd- and Pt complexes", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 551, 1998, pages 9 - 20, XP002268056 *
GARCIA, J. ET AL: "Homoleptic binuclear platinum compounds with C6F5S- and C6HF4S-", INORGANICA CHIMICA ACTA (1993), 207(1), 93-6, XP002268052 *
KING, R. B. ET AL: "Organosulfur derivatives of the metal carbonyls. XIV. Reactions of trifluoromethylthiosilver with certain norbornadiene and tetraphenylcyclobutadienemetal complexes", INORGANIC CHEMISTRY, vol. 10, no. 7, 1971, pages 1376 - 1379, XP002268051 *
RIVERA, GUILLERMINA ET AL: "Dynamic Study of Homoleptic Bimetallic Platinum(II) Complexes Bridged by Fluorinated Benzenethiolates", INORGANIC CHEMISTRY (2001), 40(22), 5575-5580, XP002268053 *
YANG, DONG SHENG ET AL: "Electronic structure of square-planar cis-bis(trifluoromethyl)platinum(II complexes from UV photoelectron spectra and SCF-MS-X.alpha. calculations", INORGANIC CHEMISTRY (1990), 29(13), 2496-501, XP002268049 *

Also Published As

Publication number Publication date
EP1520060A2 (en) 2005-04-06
EP1520060B1 (en) 2009-10-07
WO2003106734A2 (en) 2003-12-24
AU2003240108A8 (en) 2003-12-31
CN1675407A (en) 2005-09-28
GB0213925D0 (en) 2002-07-31
IL165827A0 (en) 2006-01-15
DE60329598D1 (en) 2009-11-19
ATE445030T1 (en) 2009-10-15
US20050227181A1 (en) 2005-10-13
US7410900B2 (en) 2008-08-12
JP2005530043A (en) 2005-10-06
AU2003240108A1 (en) 2003-12-31

Similar Documents

Publication Publication Date Title
Klesko et al. Thermal atomic layer deposition of titanium films using titanium tetrachloride and 2-methyl-1, 4-bis (trimethylsilyl)-2, 5-cyclohexadiene or 1, 4-bis (trimethylsilyl)-1, 4-dihydropyrazine
DE69914092D1 (en) PRODUCTION METHOD FOR RUTHENIUM METAL LAYERS
DE602005016361D1 (en) Volatile Ketoiminate and Diiminate Metal Complexes
DE60306817D1 (en) METAL CORROSION
ATE320002T1 (en) METHOD OF GOLD DEPOSITION
DE60306772D1 (en) ELECTRODE FOR GAS DEVELOPMENT AND ITS MANUFACTURING PROCESS
WO2003106734A3 (en) METALLIZATION
CA2393264A1 (en) Water-cooling jackets for electric arc furnaces
KR20110027487A (en) Metal pattern forming composition and metal pattern forming method using the same
TR200102485T2 (en) Brilliant noble metal preparation
JP4632243B2 (en) Method for forming low resistance metal pattern
US20120141821A1 (en) Bathroom appliance
KR910008164A (en) Method for Forming Copper Thin Film by Low Temperature CVD
EP0077535A1 (en) Method for the production of layers of high melting metals at low substrate temperatures
FR2787472B1 (en) PROCESS FOR PRODUCING A METAL ALLOY POWDER OF THE MCRALY TYPE AND COATINGS OBTAINED THEREWITH
AU743343B2 (en) Novel copper(I) precursors for chemical deposit in gas phase of metallic copper
KR970043275A (en) Structure formed with transparent protective film and manufacturing method thereof
Gagnon et al. Upper-rim functionalization of calix [4] arene by chloro (isocyanide) gold (I) groups: an entry to polymetallic architecture
DE69914711D1 (en) Production of platinum coatings by plasma polymerization
US6030783A (en) Photo-potentiation of cisplatin chemotherapy
US6786624B2 (en) High temperature lighting bulb shield
JP2005530043A5 (en)
US20060097622A1 (en) Method of forming metal pattern having low resistivity
EP0086520B1 (en) Method of depositing a metal
AU2003276374A1 (en) Fluorine-free metallic complexes for gas-phase chemical metal deposition

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 165827

Country of ref document: IL

Ref document number: 2860/CHENP/2004

Country of ref document: IN

Ref document number: 2003732723

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020047020513

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2004513537

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 20038195739

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2003732723

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10518952

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 1020047020513

Country of ref document: KR