WO2004006014A3 - Method of using an amorphous carbon layer for improved reticle fabrication - Google Patents

Method of using an amorphous carbon layer for improved reticle fabrication Download PDF

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Publication number
WO2004006014A3
WO2004006014A3 PCT/US2003/020113 US0320113W WO2004006014A3 WO 2004006014 A3 WO2004006014 A3 WO 2004006014A3 US 0320113 W US0320113 W US 0320113W WO 2004006014 A3 WO2004006014 A3 WO 2004006014A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
amorphous carbon
carbon layer
reticle fabrication
improved reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/020113
Other languages
French (fr)
Other versions
WO2004006014A2 (en
Inventor
Cyrus E Tabery
Christopher F Lyons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to JP2004519646A priority Critical patent/JP4478568B2/en
Priority to AU2003281424A priority patent/AU2003281424A1/en
Priority to EP03742217A priority patent/EP1518150B1/en
Priority to DE60304335T priority patent/DE60304335T2/en
Publication of WO2004006014A2 publication Critical patent/WO2004006014A2/en
Publication of WO2004006014A3 publication Critical patent/WO2004006014A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method of using an amorphous carbon layer (130) for improved reticle fabrication includes depositing a stack of layers including a substrate (110), an absorber (120), a transfer layer (130), an anti­reflective coating (ARC) layer (140), and a photoresist layer (150), patterning (45) the photoresist layer (150), and etching (55, 65) the ARC layer (140) and the transfer layer (130). The method also includes etching (75) the absorber layer(120) and removing (85) the transfer layer (130). The transfer layer (130) including amorphous carbon.
PCT/US2003/020113 2002-07-03 2003-06-25 Method of using an amorphous carbon layer for improved reticle fabrication Ceased WO2004006014A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004519646A JP4478568B2 (en) 2002-07-03 2003-06-25 Method of using an amorphous carbon layer for the production of an improved reticle
AU2003281424A AU2003281424A1 (en) 2002-07-03 2003-06-25 Method of using an amorphous carbon layer for improved reticle fabrication
EP03742217A EP1518150B1 (en) 2002-07-03 2003-06-25 Method of reticle fabrication using an amorphous carbon layer
DE60304335T DE60304335T2 (en) 2002-07-03 2003-06-25 METHOD FOR THE PRODUCTION OF A PHOTOMASK USING AN AMORPHOUS CARBON LAYER

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/190,138 2002-07-03
US10/190,138 US20040079726A1 (en) 2002-07-03 2002-07-03 Method of using an amorphous carbon layer for improved reticle fabrication

Publications (2)

Publication Number Publication Date
WO2004006014A2 WO2004006014A2 (en) 2004-01-15
WO2004006014A3 true WO2004006014A3 (en) 2004-06-10

Family

ID=30114046

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/020113 Ceased WO2004006014A2 (en) 2002-07-03 2003-06-25 Method of using an amorphous carbon layer for improved reticle fabrication

Country Status (8)

Country Link
US (1) US20040079726A1 (en)
EP (1) EP1518150B1 (en)
JP (1) JP4478568B2 (en)
CN (1) CN1304904C (en)
AU (1) AU2003281424A1 (en)
DE (1) DE60304335T2 (en)
TW (1) TW200401376A (en)
WO (1) WO2004006014A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855627B1 (en) * 2002-12-04 2005-02-15 Advanced Micro Devices, Inc. Method of using amorphous carbon to prevent resist poisoning
US7078351B2 (en) * 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
KR100704470B1 (en) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 Method for manufacturing semiconductor device using amorphous carbon film as sacrificial hard mask
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
KR100618907B1 (en) * 2005-07-30 2006-09-01 삼성전자주식회사 Semiconductor structure including multiple anti-reflective layers, method of forming a pattern using the structure and pattern of the semiconductor device
US7375038B2 (en) 2005-09-28 2008-05-20 Applied Materials, Inc. Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication
KR100780944B1 (en) * 2005-10-12 2007-12-03 삼성전자주식회사 Carbon-containing film etching method and manufacturing method of semiconductor device using same
KR100932315B1 (en) * 2007-02-09 2009-12-16 주식회사 하이닉스반도체 Metal wiring formation method of semiconductor device
US7553770B2 (en) * 2007-06-06 2009-06-30 Micron Technology, Inc. Reverse masking profile improvements in high aspect ratio etch
US20090053620A1 (en) * 2007-08-24 2009-02-26 Hynix Semiconductor Inc. Blank Mask and Method for Fabricating Photomask Using the Same
TWI409580B (en) * 2008-06-27 2013-09-21 S&S Tech Co Ltd Blankmask, photomask and method for manufacturing the same
US9305835B2 (en) * 2014-02-26 2016-04-05 International Business Machines Corporation Formation of air-gap spacer in transistor
KR102401580B1 (en) 2015-06-04 2022-05-24 삼성전자주식회사 Methods of manufacturing pellicle assembly and photomask assembly including the same
CN113126441B (en) * 2021-03-29 2024-06-07 上海华力集成电路制造有限公司 Optimization method for improving photoetching defect caused by water adsorption of photoetching front layer film
WO2023092298A1 (en) * 2021-11-23 2023-06-01 华为技术有限公司 Electron beam inspection equipment and inspection method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217245A (en) * 1986-03-19 1987-09-24 Fujitsu Ltd Low reflective photomask
US4704342A (en) * 1985-04-02 1987-11-03 Fairchild Semiconductor Corporation Photomask having a patterned carbon light-blocking coating
US5998100A (en) * 1996-05-24 1999-12-07 Kabushiki Kaisha Toshiba Fabrication process using a multi-layer antireflective layer
US6127263A (en) * 1998-07-10 2000-10-03 Applied Materials, Inc. Misalignment tolerant techniques for dual damascene fabrication
EP1154468A2 (en) * 2000-02-17 2001-11-14 Applied Materials, Inc. Method of depositing an amorphous carbon layer
US20030165747A1 (en) * 2002-03-04 2003-09-04 Magg Christopher K. Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3177968B2 (en) * 1998-12-04 2001-06-18 日本電気株式会社 Semiconductor device and manufacturing method thereof
US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
KR100307629B1 (en) * 1999-04-30 2001-09-26 윤종용 Method for forming and applicating a anti reflective film using hydrocarbon based gas
KR100304708B1 (en) * 1999-07-14 2001-11-01 윤종용 Semiconductor device having a double layer type anti-reflective coating &fabricating method thereof
JP2001056555A (en) * 1999-08-20 2001-02-27 Tokyo Ohka Kogyo Co Ltd Negative type resist composition and photosensitive material using same
TW428248B (en) * 1999-09-30 2001-04-01 Taiwan Semiconductor Mfg Structure and method of metal conductive layer and dielectric layer
US6210843B1 (en) * 1999-11-22 2001-04-03 Intel Corporation Modulation of peripheral critical dimension on photomask with differential electron beam dose
US6583047B2 (en) * 2000-12-26 2003-06-24 Honeywell International, Inc. Method for eliminating reaction between photoresist and OSG
US6812134B1 (en) * 2001-06-28 2004-11-02 Lsi Logic Corporation Dual layer barrier film techniques to prevent resist poisoning
US6774033B1 (en) * 2002-11-04 2004-08-10 Cypress Semiconductor Corporation Metal stack for local interconnect layer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704342A (en) * 1985-04-02 1987-11-03 Fairchild Semiconductor Corporation Photomask having a patterned carbon light-blocking coating
JPS62217245A (en) * 1986-03-19 1987-09-24 Fujitsu Ltd Low reflective photomask
US5998100A (en) * 1996-05-24 1999-12-07 Kabushiki Kaisha Toshiba Fabrication process using a multi-layer antireflective layer
US6127263A (en) * 1998-07-10 2000-10-03 Applied Materials, Inc. Misalignment tolerant techniques for dual damascene fabrication
EP1154468A2 (en) * 2000-02-17 2001-11-14 Applied Materials, Inc. Method of depositing an amorphous carbon layer
US20030165747A1 (en) * 2002-03-04 2003-09-04 Magg Christopher K. Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 012, no. 079 (P - 676) 12 March 1988 (1988-03-12) *

Also Published As

Publication number Publication date
AU2003281424A1 (en) 2004-01-23
JP4478568B2 (en) 2010-06-09
US20040079726A1 (en) 2004-04-29
EP1518150A2 (en) 2005-03-30
CN1304904C (en) 2007-03-14
CN1666147A (en) 2005-09-07
JP2005531819A (en) 2005-10-20
DE60304335D1 (en) 2006-05-18
AU2003281424A8 (en) 2004-01-23
EP1518150B1 (en) 2006-03-29
TW200401376A (en) 2004-01-16
WO2004006014A2 (en) 2004-01-15
DE60304335T2 (en) 2006-12-07

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