WO2004017351A2 - Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation - Google Patents
Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation Download PDFInfo
- Publication number
- WO2004017351A2 WO2004017351A2 PCT/US2003/025632 US0325632W WO2004017351A2 WO 2004017351 A2 WO2004017351 A2 WO 2004017351A2 US 0325632 W US0325632 W US 0325632W WO 2004017351 A2 WO2004017351 A2 WO 2004017351A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electro
- thermal actuator
- mems switch
- current passes
- thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H37/00—Thermally-actuated switches
- H01H2037/008—Micromechanical switches operated thermally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H37/00—Thermally-actuated switches
- H01H37/02—Details
- H01H37/32—Thermally-sensitive members
- H01H37/52—Thermally-sensitive members actuated due to deflection of bimetallic element
- H01H37/54—Thermally-sensitive members actuated due to deflection of bimetallic element wherein the bimetallic element is inherently snap acting
- H01H37/5409—Bistable switches; Resetting means
Definitions
- MEMS microelectromechanical systems
- MEMS microelectromechanical system
- the electrical elements are typically formed using known integrated circuit fabrication techniques.
- the mechanical elements are typically fabricated using lithographic and other related processes to perform micromachining, wherein portions of a substrate (e.g., silicon wafer) are selectively etched away or added to with new materials and structural layers.
- MEMS devices include actuators, sensors, switches, accelerometers, and modulators.
- MEMS switches i.e., contacts, relays, shunts, etc.
- FET field-effect transistor
- MEMS switches are generally much slower than solid-state switches. This limitation precludes applying MEMS switches in certain technologies where sub-microsecond switching is required, such as switching an antenna between transmit and receive in highspeed wireless communication devices.
- MEMS switches are critically important because of the relatively low insertion loss.
- One such application is in a smart antenna application that relates to switching between a plurality of antennas within a wireless communication device. Smart antenna switching applications typically require switching speeds ranging from milliseconds to seconds depending on the systems.
- FIGS. 1 and 1A illustrate a prior art MEMS switch 10 that includes a beam 12 which is electro-thermally buckled. Beam 12 is formed of a high thermal expansion conductor 14 and a low thermal expansion dielectric 16. Conductor 14 and dielectric 16 are restrained at opposing ends by anchors 18 A, 18B. Activation of MEMS switch 10 is illustrated in FIG. 1A. A voltage is applied across beam 12 such that current travels through beam 12 with much more of the current passing through low resistance conductor 14.
- One benefit of using an electro-thermally deflected beam is that the switch requires a relatively low actuation voltage during operation. However, when the MEMS switch is in the actuated position, power is being consumed continuously in order to maintain the resistive heating within the beam.
- FIG. 2 illustrates another prior art MEMS switch 30 that includes a beam 32 which is secured at opposite ends to anchors 34A, 34B.
- Beam 32 is secured to anchors 34A, 34B in a manner that places beam 32 under compressive stress. The compressive stress causes beam 32 to buckle. Beam 32 needs to remain in a buckled state for MEMS switch 30 to operate appropriately.
- a lateral actuation electrode 36 is positioned adjacent to beam 32 at the level beam 32 would occupy were it not buckled from the compressive stress.
- This level of beam 32 is referred to as the neutral position and is indicated in FIG. 2 with line 38.
- a voltage is applied to lateral actuation electrode 36 to generate an electrostatic force that pulls beam 32 up or down toward its neutral position.
- the inertia of beam 32 carries it past the neutral position to the other side where beam 32 electrically connects contacts (not shown) to allow signals to pass between the contacts.
- MEMS switch 30 does not require any power to maintain beam 32 in either the up or down position.
- One drawback associated with MEMS switch 30 is that large actuation voltages are required with electrostatic actuation in general, and in particular when electrostatic actuation is used to maneuver a buckled beam.
- FIG. 1 illustrates a prior art MEMS switch that includes an electro-thermal beam with the switch in an open position.
- FIG. 1A illustrates the MEMS switch of FIG. 1 with the electro-thermal beam activated such the switch is in a closed position.
- FIG. 2 illustrates another type of prior art MEMS switch that includes a buckled beam which is manipulated by an electrostatic force.
- FIG. 3 A illustrates an example embodiment of a MEMS switch with the MEMS switch off and no actuation voltage applied to the switch.
- FIG. 3B illustrates the MEMS switch of FIG. 3A with the MEMS switch on and an actuation voltage applied to a first electro-thermal actuator in the switch.
- FIG. 3C illustrates the MEMS switch of FIG. 3A with the MEMS switch on and no actuation voltage applied to the first electro-thermal actuator in the switch.
- FIG. 3D illustrates the MEMS switch of FIG. 3A with the MEMS switch off and an actuation voltage applied to a second electro-thermal actuator in the switch.
- FIG. 4A illustrates the beam used in the MEMS switch of FIGS. 3A-3D with the beam in an unreleased state.
- FIG. 4B illustrates the beam of FIG. 4A with the beam in a released state.
- FIG. 5 illustrates another example beam that may be used in the MEMS switch of
- FIGS. 3A-3D are identical to FIGS. 3A-3D.
- FIG. 6A illustrates another example beam that may be used in the MEMS switch of FIGS. 3A-3D with the beam in an unreleased state.
- FIG. 6B illustrates the beam of FIG. 6A with the beam in a released state.
- FIG. 6C illustrates the beam of FIGS. 6A and 6B after the beam is buckled by an actuating force.
- FIG. 7A illustrates another example beam that may be used the MEMS switch of FIGS. 3A-3D.
- FIG. 7B illustrates the beam of FIG. 7A after the beam is buckled by an actuating force.
- FIG. 8 is a schematic circuit diagram illustrating the MEMS switch of FIGS. 3A- 3D in an example wireless communication application.
- a microelectromechanical systems (MEMS) switch 50 that includes a beam 52, a first electro-thermal actuator 54 and a second electro-thermal actuator 56 is shown in FIGS. 3 A, 3B, 3C and 3D.
- the beam 52 has a first side 58 and a second side 60.
- First electro-thermal actuator 54 includes a first stud 62 that applies a force to the first side 58 of beam 52 as current passes through first electro-thermal actuator 54.
- second electro-thermal actuator 56 includes a second stud 64 that applies a force to the second side 60 of beam 52 as current passes through second electro-thermal actuator 56.
- Actuators 54, 56 may be connected to a circuit by bond pads or other conventional means so that the circuit can direct the supply of current to actuators 54, 56.
- MEMS switch 50 further comprises a transmission line 66 that includes at least a pair of electrically isolated contacts 67 A, 67B. Contacts 67 A, 67B may be connected to a circuit by bond pads or other conventional means. Beam 52 electrically connects contacts 67A, 67B after first electro-thermal actuator 54 applies a force to beam 52 to maneuver beam 52 against contacts 67 A, 67B. As current passes through second electro-thermal actuator 56, second electro-thermal actuator 56 applies a force to beam 52 to disengage beam 52 from contacts 67A, 67B.
- beam 52 is fixed at opposing ends to anchors 68A, 68B. Beam 52 is under a compressive stress such that beam 52 is buckled.
- FIG. 3 A illustrates MEMS switch 50 when it is off and no actuation voltage is applied to either actuator 54, 56.
- MEMS switch 50 is turned on by applying an actuation voltage to first electro-thermal actuator 54.
- the actuation voltage generates current within actuator 54 that causes resistive heating within actuator 54.
- First electro-thermal actuator 54 is fixed at opposing ends to anchors 69A, 69B, and in some embodiments is made up of a high thermal expansion conductor 70 and a low thermal expansion dielectric 71.
- the resistive heating causes the first electro-thermal actuator 54 to buckle outward on the side of conductor 70 due to the difference in thermal expansion between conductor 70 and dielectric 71.
- first electro-thermal actuator 54 buckles, it applies a force to beam 52 that is sufficient to move beam 52 toward its neutral position.
- the position that beam 52 would occupy were it not buckled from the compressive stress is referred to as the neutral position and is indicated in FIG. 3B with line 72.
- the inertia of beam 52 carries it past the neutral position to the other side where beam 52 electrically connects contacts 67A, 67B to allow signals to pass between contacts 67 A, 67B.
- first electrothermal actuator 54 will continuously engage beam 52, while in other embodiments first electro-thermal actuator 54 will engage beam 52 only until beam 52 moves past its neutral position.
- FIG. 3C illustrates MEMS switch 50 when it is on and no actuation voltage is applied to either actuator 54, 56.
- MEMS switch 50 is turned off by applying an actuation voltage to second electro-thermal actuator 56.
- the actuation voltage generates current within actuator 56 that causes resistive heating within actuator 56.
- Second electro-thermal actuator 56 is fixed at opposing ends to anchors 79A, 79B and may be similarly formed of a high thermal expansion conductor 80 and a low thermal expansion dielectric 81.
- the resistive heating causes second electro-thermal actuator 56 to buckle outward on the side of conductor 80 due to the difference in thermal expansion between conductor 80 and dielectric 81.
- second electro-thermal actuator 56 buckles, it applies a force to beam 52 that is sufficient to move beam 52 away from contacts 67A, 67B toward its neutral position.
- the inertia of beam 52 carries it past the neutral position to the other side where beam 52 can be engaged by first electro-thermal actuator 54 when it is necessary to again turn on MEMS switch 50.
- second electro-thermal actuator 56 will continuously engage beam 52, while in other embodiments actuator 56 will engage beam 52 only until beam 52 moves past its neutral position. Once beam 52 moves past the neutral position, the compressive stress will cause beam 52 to buckle outward away from contacts 67A, 67B. Contact between actuators 54, 56 and beam 52 when beam 52 is engaged with contacts 67 A, 67 B can cause interference with signals that are transferred between contacts 67A, 67B through beam 52.
- FIG. 4A shows beam 52 in an unreleased state during fabrication of beam 52 using lithographic and other related processes to perform micromachining, wherein portions are selectively etched away, or added to, with new materials and structural layers.
- beam 52 is released so that beam 52 is restrained only by anchors 68 A, 68B.
- Beam 52 expands outward against anchors 68 A, 68B to place beam 52 under compressive stress.
- the compressive stress is sufficient to cause beam 52 to buckle (see FIG. 4B).
- the critical stress for buckling is:
- Beam 52 may be any material or combination of materials.
- One example beam 100 is shown in FIG. 5 where beam 100 is unreleased and includes a dielectric body 102 covered with an electrical conductor 104. Electrical conductor 104 facilitates transferring signals between isolated contacts that become electrically connected by beam 100 during operation of a MEMS switch that includes beam 100.
- Another example beam 110 that may be used in MEMS switch 50 is shown in
- FIGS. 6A, 6B and 6C Beam 110 is shown in an unreleased state in FIG. 6 A and in a released state in FIG. 6B. Beam 110 has the same arc-shape before and after release such that it is not under compressive stress.
- a MEMS switch 50 that includes beam 110
- one of the first and second electro-thermal actuators 54, 56 buckles beam 110 such that it is deflected into an opposing arc (see FIG. 6C). Beam 110 is then forced by the other of the first and second actuators 54, 56 back into its original arc- shaped, unstressed state.
- FIGS. 7A and 7B show a similar example beam 120.
- beam 120 has an arc shape similar to beam 110 when beam 120 is released.
- Beam 120 includes two elongated members 121 A, 121B that are each secured at opposing ends to anchors 122A, 122B.
- a mid-portion of member 121 A is secured to a mid-portion of member 121B by a support 123.
- FIG. 8 shows a schematic circuit diagram of a MEMS-based wireless communication system 800 that includes MEMS switches 830, 840.
- MEMS switches 830 and 840 are the same as MEMS switch 50 described above.
- MEMS switches 830, 840 have intrinsic advantages over their conventional solid-state counterparts (e.g., field-effect transistor (FET) switches), including superior power efficiency, low insertion loss and excellent isolation.
- FET field-effect transistor
- MEMS switches 830, 840 are suitable for switching an antenna 810 between transmit and receive in some wireless communication devices where sub-microsecond switching is not required.
- System 800 includes an antenna 810 for receiving a signal 814 and transmitting a signal 820.
- MEMS switches 830, 840 are electrically connected to antenna 810 via a branch circuit 844 having a first branch wire 846 and a second branch wire 848.
- a voltage source controller 912 selectively activates MEMS switches 830 and 840 so that received signal 814 can be transmitted from antenna 810 to receiver electronics 930 for processing, while transmitted signal 820 generated by transmitter electronics 940 can be passed to antenna 810 for transmission.
- MEMS switches 830, 840 are off when beams 52 are disengaged from respective contacts 67 A, 67B.
- MEMS switches 830, 840 are individually turned on by selectively applying an actuation voltage to a respective first electro-thermal actuator 54 that is in each MEMS switch 830, 840. Applying an actuation voltage to the first electro-thermal actuators 54 causes each first electro-thermal actuator 54 to buckle.
- the first electro-thermal actuator 54 in each respective MEMS switch 830, 840 buckles, it applies a force to beam 52 that is sufficient to buckle beam 52.
- beam 52 buckles electrically connects contacts 67 A, 67B such that a desired one of the corresponding signals 814, 820 passes between contacts 67 A, 67B along the corresponding first or second branch wire 846, 848.
- MEMS switches 830, 840 are each turned off by selectively applying an actuation voltage to the respective second electro-thermal actuators 56 such that the second electrothermal actuators 56 buckle and apply a force to respective beams 52 that is sufficient to buckle beams 52 away from contacts 67 A, 67B.
- voltage source controller 912 includes logic for selectively supplying voltages to actuators 54, 56 in each MEMS switch 830, 840 permitting selective activation and deactivation of MEMS switches 830, 840.
- MEMS switches of the example embodiments described herein may also be used in smart antenna applications where insertion loss is the most important parameter.
- Smart antenna applications relate to switching between a plurality of antennas within a wireless communication device. Antenna switching is often used in wireless communication applications where there are signal variations.
- the MEMS switch described above provides a potential solution for applications where MEMS switches with low actuation voltage and low power consumption are desirable.
- the MEMS switch supplies designers with a multitude of options for developing electronic devices that include MEMS switches, such as computer systems, high speed switches, relays, shunts, surface acoustic wave switches, diaphragms and sensors. Many other embodiments will be apparent to those of skill in the art from the above description.
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Thermally Actuated Switches (AREA)
- Push-Button Switches (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
Description
Claims
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE60332351T DE60332351D1 (en) | 2002-08-14 | 2003-08-13 | ELECTROTHERMICALLY ACTUATED MICROELECTROMECHANICAL SWITCH WITH BISTABILE CYCLE BARS |
| AU2003274912A AU2003274912A1 (en) | 2002-08-14 | 2003-08-13 | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
| CN038192853A CN1675728B (en) | 2002-08-14 | 2003-08-13 | Bending beam bistable micro-electromechanical switch driven by electric heat |
| EP03759192A EP1529301B1 (en) | 2002-08-14 | 2003-08-13 | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
| JP2004529474A JP4143066B2 (en) | 2002-08-14 | 2003-08-13 | Buckling beam bistable microelectromechanical switch using electrothermal actuation |
| AT03759192T ATE466373T1 (en) | 2002-08-14 | 2003-08-13 | ELECTROTHERMALLY ACTUATED MICROELECTROMECHANICAL SWITCH WITH BISTABLE BUCKLING BEAM |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/218,290 | 2002-08-14 | ||
| US10/218,290 US6753582B2 (en) | 2002-08-14 | 2002-08-14 | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2004017351A2 true WO2004017351A2 (en) | 2004-02-26 |
| WO2004017351A3 WO2004017351A3 (en) | 2004-07-29 |
Family
ID=31714519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2003/025632 Ceased WO2004017351A2 (en) | 2002-08-14 | 2003-08-13 | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6753582B2 (en) |
| EP (1) | EP1529301B1 (en) |
| JP (1) | JP4143066B2 (en) |
| CN (1) | CN1675728B (en) |
| AT (1) | ATE466373T1 (en) |
| AU (1) | AU2003274912A1 (en) |
| DE (1) | DE60332351D1 (en) |
| MY (1) | MY135407A (en) |
| TW (1) | TWI310953B (en) |
| WO (1) | WO2004017351A2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2410371B (en) * | 2004-01-22 | 2007-04-04 | Microsaic Systems Ltd | Microengineered broadband electrical switches |
| KR100882148B1 (en) | 2007-06-22 | 2009-02-06 | 한국과학기술원 | Electrostatic driver, driving method and application device using same |
| CN101814866A (en) * | 2010-04-16 | 2010-08-25 | 大连理工大学 | Method for manufacturing electrothermal drive microstructure |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100513723B1 (en) * | 2002-11-18 | 2005-09-08 | 삼성전자주식회사 | MicroElectro Mechanical system switch |
| US6985650B2 (en) * | 2003-08-05 | 2006-01-10 | Xerox Corporation | Thermal actuator and an optical waveguide switch including the same |
| US6985651B2 (en) * | 2003-08-05 | 2006-01-10 | Xerox Corporation | Thermal actuator with offset beam segment neutral axes and an optical waveguide switch including the same |
| US6983088B2 (en) * | 2003-08-05 | 2006-01-03 | Xerox Corporation | Thermal actuator and an optical waveguide switch including the same |
| US7362199B2 (en) | 2004-03-31 | 2008-04-22 | Intel Corporation | Collapsible contact switch |
| US7221817B2 (en) | 2004-08-13 | 2007-05-22 | Xerox Corporation | Beam switch structures and methods |
| US7046539B1 (en) * | 2004-11-02 | 2006-05-16 | Sandia Corporation | Mechanical memory |
| US7312678B2 (en) * | 2005-01-05 | 2007-12-25 | Norcada Inc. | Micro-electromechanical relay |
| KR100967210B1 (en) | 2005-09-27 | 2010-07-05 | 삼성전자주식회사 | Shape memory elements |
| CN1923670B (en) * | 2006-09-21 | 2011-01-05 | 上海交通大学 | Modified SU8 electrothermal microactuator with multi-arc structure for linear propulsion |
| JP2008103777A (en) * | 2006-10-17 | 2008-05-01 | Ritsumeikan | Micromechanical resonator |
| US20090146773A1 (en) * | 2007-12-07 | 2009-06-11 | Honeywell International Inc. | Lateral snap acting mems micro switch |
| US8232858B1 (en) * | 2008-02-20 | 2012-07-31 | Sandia Corporation | Microelectromechanical (MEM) thermal actuator |
| TWI384518B (en) * | 2008-04-15 | 2013-02-01 | Pei Zen Chang | Low pull-in voltage rf-mems switch and method for preparing the same |
| DE102009018365A1 (en) * | 2009-04-23 | 2010-11-04 | Albert-Ludwigs-Universität Freiburg | Thermo-pneumatic actuator and method for producing such |
| CN101719575B (en) * | 2010-01-13 | 2012-08-29 | 上海交通大学 | Electrothermal-driven in-plane bistable radio frequency microswitch |
| US9438139B2 (en) | 2012-08-06 | 2016-09-06 | Board Of Trustees Of Michigan State University | Energy harvesting devices for low frequency applications |
| US10018238B2 (en) * | 2013-11-01 | 2018-07-10 | Sabanci University | Variable negative stiffness actuation |
| KR20170127404A (en) * | 2014-11-24 | 2017-11-21 | 제네시스 어드밴스드 테크놀러지 인크. | Control element with buckled member |
| US10014462B2 (en) * | 2015-01-22 | 2018-07-03 | Carnegie Mellon University | Piezoelectric nanoelectromechanical relays |
| FR3043269B1 (en) * | 2015-10-29 | 2017-12-22 | Sagemcom Energy & Telecom Sas | CUTTING ORGAN WITH THERMAL CONTROL. ELECTRIC COUNTER EQUIPPED WITH THE CUTTING MEMBER. |
| CN109103708B (en) * | 2018-07-16 | 2024-04-05 | 河北科技大学 | Automatic fuse with recyclable overheat protection function for electric plug and use method of automatic fuse |
| CN116443805A (en) * | 2023-02-10 | 2023-07-18 | 北京燕东微电子股份有限公司 | MEMS device and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994816A (en) * | 1996-12-16 | 1999-11-30 | Mcnc | Thermal arched beam microelectromechanical devices and associated fabrication methods |
| US6310419B1 (en) * | 2000-04-05 | 2001-10-30 | Jds Uniphase Inc. | Resistor array devices including switch contacts operated by microelectromechanical actuators and methods for fabricating the same |
| US6407478B1 (en) * | 2000-08-21 | 2002-06-18 | Jds Uniphase Corporation | Switches and switching arrays that use microelectromechanical devices having one or more beam members that are responsive to temperature |
-
2002
- 2002-08-14 US US10/218,290 patent/US6753582B2/en not_active Expired - Lifetime
-
2003
- 2003-07-15 TW TW092119235A patent/TWI310953B/en active
- 2003-07-22 MY MYPI20032750A patent/MY135407A/en unknown
- 2003-08-13 AU AU2003274912A patent/AU2003274912A1/en not_active Abandoned
- 2003-08-13 EP EP03759192A patent/EP1529301B1/en not_active Expired - Lifetime
- 2003-08-13 WO PCT/US2003/025632 patent/WO2004017351A2/en not_active Ceased
- 2003-08-13 DE DE60332351T patent/DE60332351D1/en not_active Expired - Lifetime
- 2003-08-13 AT AT03759192T patent/ATE466373T1/en not_active IP Right Cessation
- 2003-08-13 CN CN038192853A patent/CN1675728B/en not_active Expired - Fee Related
- 2003-08-13 JP JP2004529474A patent/JP4143066B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2410371B (en) * | 2004-01-22 | 2007-04-04 | Microsaic Systems Ltd | Microengineered broadband electrical switches |
| KR100882148B1 (en) | 2007-06-22 | 2009-02-06 | 한국과학기술원 | Electrostatic driver, driving method and application device using same |
| CN101814866A (en) * | 2010-04-16 | 2010-08-25 | 大连理工大学 | Method for manufacturing electrothermal drive microstructure |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040032000A1 (en) | 2004-02-19 |
| TWI310953B (en) | 2009-06-11 |
| JP2005536031A (en) | 2005-11-24 |
| TW200405379A (en) | 2004-04-01 |
| EP1529301A2 (en) | 2005-05-11 |
| EP1529301B1 (en) | 2010-04-28 |
| MY135407A (en) | 2008-04-30 |
| CN1675728A (en) | 2005-09-28 |
| WO2004017351A3 (en) | 2004-07-29 |
| JP4143066B2 (en) | 2008-09-03 |
| AU2003274912A1 (en) | 2004-03-03 |
| DE60332351D1 (en) | 2010-06-10 |
| ATE466373T1 (en) | 2010-05-15 |
| CN1675728B (en) | 2010-12-08 |
| US6753582B2 (en) | 2004-06-22 |
| AU2003274912A8 (en) | 2004-03-03 |
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