WO2004040615A3 - High-power pulsed magnetically enhanced plasma processing - Google Patents

High-power pulsed magnetically enhanced plasma processing Download PDF

Info

Publication number
WO2004040615A3
WO2004040615A3 PCT/US2003/034191 US0334191W WO2004040615A3 WO 2004040615 A3 WO2004040615 A3 WO 2004040615A3 US 0334191 W US0334191 W US 0334191W WO 2004040615 A3 WO2004040615 A3 WO 2004040615A3
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
weakly
ionized plasma
proximate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/034191
Other languages
French (fr)
Other versions
WO2004040615A2 (en
Inventor
Roman Chistyakov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zond LLC
Original Assignee
Zond LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32106072&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2004040615(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Zond LLC filed Critical Zond LLC
Priority to AT03776584T priority Critical patent/ATE504074T1/en
Priority to DE60336574T priority patent/DE60336574D1/en
Priority to EP03776584A priority patent/EP1556882B1/en
Priority to JP2004548534A priority patent/JP2006505128A/en
Priority to AU2003284194A priority patent/AU2003284194A1/en
Publication of WO2004040615A2 publication Critical patent/WO2004040615A2/en
Publication of WO2004040615A3 publication Critical patent/WO2004040615A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Magnetic Treatment Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

A plasma processing apparatus according to the present invention includes an anode and a cathode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate.
PCT/US2003/034191 2002-10-29 2003-10-28 High-power pulsed magnetically enhanced plasma processing Ceased WO2004040615A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT03776584T ATE504074T1 (en) 2002-10-29 2003-10-28 PULSED HIGH-PERFORMANCE PLASMA PROCESSING SYSTEM WITH MAGNETICALLY INCREASED EFFECT
DE60336574T DE60336574D1 (en) 2002-10-29 2003-10-28 Pulsed high power plasma processing unit with magnetically enhanced effect
EP03776584A EP1556882B1 (en) 2002-10-29 2003-10-28 High-power pulsed magnetically enhanced plasma processing
JP2004548534A JP2006505128A (en) 2002-10-29 2003-10-28 Plasma treatment magnetically enhanced by high power pulses
AU2003284194A AU2003284194A1 (en) 2002-10-29 2003-10-28 High-power pulsed magnetically enhanced plasma processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/065,551 2002-10-29
US10/065,551 US6896775B2 (en) 2002-10-29 2002-10-29 High-power pulsed magnetically enhanced plasma processing

Publications (2)

Publication Number Publication Date
WO2004040615A2 WO2004040615A2 (en) 2004-05-13
WO2004040615A3 true WO2004040615A3 (en) 2004-09-23

Family

ID=32106072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/034191 Ceased WO2004040615A2 (en) 2002-10-29 2003-10-28 High-power pulsed magnetically enhanced plasma processing

Country Status (7)

Country Link
US (2) US6896775B2 (en)
EP (1) EP1556882B1 (en)
JP (1) JP2006505128A (en)
AT (1) ATE504074T1 (en)
AU (1) AU2003284194A1 (en)
DE (1) DE60336574D1 (en)
WO (1) WO2004040615A2 (en)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541283B2 (en) * 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US6806651B1 (en) * 2003-04-22 2004-10-19 Zond, Inc. High-density plasma source
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US7663319B2 (en) * 2004-02-22 2010-02-16 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7084573B2 (en) * 2004-03-05 2006-08-01 Tokyo Electron Limited Magnetically enhanced capacitive plasma source for ionized physical vapor deposition
US7750575B2 (en) * 2004-04-07 2010-07-06 Zond, Inc. High density plasma source
EP1609882A1 (en) * 2004-06-24 2005-12-28 METAPLAS IONON Oberflächenveredelungstechnik GmbH Coating device and method by cathodic sputtering
WO2006073127A1 (en) * 2005-01-05 2006-07-13 Ulvac, Inc. Method for producing magnetic multilayer film
EP1937865A4 (en) * 2005-10-18 2012-12-12 Southwest Res Inst Erosion resistant coatings
US20090214787A1 (en) * 2005-10-18 2009-08-27 Southwest Research Institute Erosion Resistant Coatings
JP2008013829A (en) * 2006-07-07 2008-01-24 Fujitsu Ltd Method for forming metal oxide film
KR100847007B1 (en) * 2007-05-31 2008-07-17 세메스 주식회사 Substrate processing apparatus and method using plasma
US7966909B2 (en) 2007-07-25 2011-06-28 The Gillette Company Process of forming a razor blade
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
US9520275B2 (en) 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US9288886B2 (en) 2008-05-30 2016-03-15 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
WO2009146439A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation System, method and apparatus for generating plasma
JP5207892B2 (en) * 2008-09-11 2013-06-12 東京エレクトロン株式会社 Dry etching method
TWI365562B (en) * 2008-10-03 2012-06-01 Ind Tech Res Inst Positive electrode and method for manufacturing the same and lithium battery utilizing the same
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
EP2552340A4 (en) 2010-03-31 2015-10-14 Univ Colorado State Res Found PLASMA DEVICE WITH LIQUID-GAS INTERFACE
JP2013529352A (en) 2010-03-31 2013-07-18 コロラド ステート ユニバーシティー リサーチ ファウンデーション Liquid-gas interface plasma device
US8790791B2 (en) 2010-04-15 2014-07-29 Southwest Research Institute Oxidation resistant nanocrystalline MCrAl(Y) coatings and methods of forming such coatings
TWI554630B (en) 2010-07-02 2016-10-21 應用材料股份有限公司 Deposition apparatus and method for reducing deposition asymmetry
KR20140001242A (en) * 2011-02-25 2014-01-06 도레이 카부시키가이샤 Magnetron electrode for plasma processing
US9511572B2 (en) 2011-05-25 2016-12-06 Southwest Research Institute Nanocrystalline interlayer coating for increasing service life of thermal barrier coating on high temperature components
WO2013100073A1 (en) * 2011-12-28 2013-07-04 大日本印刷株式会社 Vapor deposition apparatus having pretreatment device that uses plasma
JP2014125651A (en) * 2012-12-26 2014-07-07 Kobe Steel Ltd Inline-type plasma CVD apparatus
MA38317A1 (en) * 2013-02-06 2016-09-30 Arcelormittal Investigación Y Desarrollo Sl Plasma source
US9249500B2 (en) 2013-02-07 2016-02-02 Applied Materials, Inc. PVD RF DC open/closed loop selectable magnetron
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9978568B2 (en) 2013-08-12 2018-05-22 Tokyo Electron Limited Self-sustained non-ambipolar direct current (DC) plasma at low power
CN103590011B (en) * 2013-11-08 2016-03-09 蚌埠玻璃工业设计研究院 A kind of magnetron sputtering prepares the device and method of AZO nesa coating
JP2017517380A (en) 2014-03-06 2017-06-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Plasma mitigation of compounds containing heavy atoms
US9336997B2 (en) 2014-03-17 2016-05-10 Applied Materials, Inc. RF multi-feed structure to improve plasma uniformity
US9523146B1 (en) 2015-06-17 2016-12-20 Southwest Research Institute Ti—Si—C—N piston ring coatings
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7481823B2 (en) * 2018-11-05 2024-05-13 東京エレクトロン株式会社 Etching method and plasma processing apparatus
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (en) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド Feedback loop for controlling pulsed voltage waveforms
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US12394604B2 (en) 2020-09-11 2025-08-19 Applied Materials, Inc. Plasma source with floating electrodes
US11776793B2 (en) 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12412748B2 (en) 2022-07-28 2025-09-09 Tokyo Electron Limited Plasma processing with magnetic ring X point
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
EP0428161A2 (en) * 1989-11-15 1991-05-22 Kokusai Electric Co., Ltd. Dry process system
US5728261A (en) * 1995-05-26 1998-03-17 University Of Houston Magnetically enhanced radio frequency reactive ion etching method and apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
JP2819420B2 (en) * 1989-11-20 1998-10-30 東京エレクトロン株式会社 Ion source
JP3076367B2 (en) * 1990-11-29 2000-08-14 キヤノン株式会社 Plasma processing equipment
SE9704607D0 (en) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
JPH11354509A (en) * 1998-04-07 1999-12-24 Seiko Epson Corp Method for detecting end point of plasma etching and plasma etching apparatus
US6057244A (en) * 1998-07-31 2000-05-02 Applied Materials, Inc. Method for improved sputter etch processing
US6291357B1 (en) * 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
US6270634B1 (en) * 1999-10-29 2001-08-07 Applied Materials, Inc. Method for plasma etching at a high etch rate
US6451703B1 (en) * 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
SE519931C2 (en) 2000-06-19 2003-04-29 Chemfilt R & D Ab Device and method for pulsed, highly ionized magnetron sputtering
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
SE525231C2 (en) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Method and apparatus for generating plasma
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
EP0428161A2 (en) * 1989-11-15 1991-05-22 Kokusai Electric Co., Ltd. Dry process system
US5728261A (en) * 1995-05-26 1998-03-17 University Of Houston Magnetically enhanced radio frequency reactive ion etching method and apparatus

Also Published As

Publication number Publication date
US20050167263A1 (en) 2005-08-04
US6896775B2 (en) 2005-05-24
JP2006505128A (en) 2006-02-09
US20040082187A1 (en) 2004-04-29
ATE504074T1 (en) 2011-04-15
DE60336574D1 (en) 2011-05-12
WO2004040615A2 (en) 2004-05-13
EP1556882B1 (en) 2011-03-30
EP1556882A2 (en) 2005-07-27
AU2003284194A1 (en) 2004-05-25

Similar Documents

Publication Publication Date Title
WO2004040615A3 (en) High-power pulsed magnetically enhanced plasma processing
WO2004031435A3 (en) High-power pulsed magnetron sputtering
US20190368030A1 (en) Apparatus for generating high-current electrical discharges
US10049861B2 (en) Inductively coupled RF plasma source with magnetic confinement and Faraday shielding
US7604716B2 (en) Methods and apparatus for generating high-density plasma
US6861642B2 (en) Neutral particle beam processing apparatus
KR100565131B1 (en) Plasma processing apparatus
SE0102134L (en) Method and apparatus for generating plasma
US20040108470A1 (en) Neutral particle beam processing apparatus
JP2009530775A (en) Mirror magnetron plasma source
JP2013535074A5 (en)
US6987364B2 (en) Floating mode ion source
CN103168338A (en) Sputtering source and sputtering method for high pressure sputtering with large target
JPS63184333A (en) Plasma treatment and device therefor
EP0639939B1 (en) Fast atom beam source
CN101542677B (en) Device for the pre-treatment of substrates
DE10190781D2 (en) Method and device for the plasma treatment of the surface of substrates by ion bombardment
US7182842B2 (en) Device for amplifying the current of an abnormal electrical discharge and system for using an abnormal electrical discharge comprising one such device
US20080087539A1 (en) Apparatus and Method for Materials Processing with Ion-Ion Plasma
JP2004362936A (en) Structure for preventing gas from discharge in piping and gas ion source having same
KR20240178981A (en) Apparatus For Neutralizing Charge Of Object With Ion-beam Source

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004548534

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2003776584

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2003776584

Country of ref document: EP