WO2004042802A3 - A method of rapidly thermally annealing multilayer wafers with an edge - Google Patents

A method of rapidly thermally annealing multilayer wafers with an edge Download PDF

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Publication number
WO2004042802A3
WO2004042802A3 PCT/IB2003/005295 IB0305295W WO2004042802A3 WO 2004042802 A3 WO2004042802 A3 WO 2004042802A3 IB 0305295 W IB0305295 W IB 0305295W WO 2004042802 A3 WO2004042802 A3 WO 2004042802A3
Authority
WO
WIPO (PCT)
Prior art keywords
edge
thermally annealing
rapidly thermally
multilayer wafers
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2003/005295
Other languages
French (fr)
Other versions
WO2004042802A2 (en
Inventor
Eric Neyret
Christophe Malleville
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to JP2005502143A priority Critical patent/JP4772501B2/en
Priority to AU2003280109A priority patent/AU2003280109A1/en
Priority to AT03772490T priority patent/ATE528790T1/en
Priority to EP03772490A priority patent/EP1559136B1/en
Publication of WO2004042802A2 publication Critical patent/WO2004042802A2/en
Publication of WO2004042802A3 publication Critical patent/WO2004042802A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a method of thermally treating a multilayer wafer (10) with an edge, the wafer being made of materials selected from semiconductive materials and the method being characterized in that during annealing heating is adapted locally and selectively at the edge to take account of the local difference in heat absorption by the edge.
PCT/IB2003/005295 2002-11-05 2003-11-03 A method of rapidly thermally annealing multilayer wafers with an edge Ceased WO2004042802A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005502143A JP4772501B2 (en) 2002-11-05 2003-11-03 Method for rapid thermal annealing of multi-layer wafers with edges
AU2003280109A AU2003280109A1 (en) 2002-11-05 2003-11-03 A method of rapidly thermally annealing multilayer wafers with an edge
AT03772490T ATE528790T1 (en) 2002-11-05 2003-11-03 METHOD FOR RAPID TEMPING MULTI-LAYER WAFERS WITH ONE EDGE
EP03772490A EP1559136B1 (en) 2002-11-05 2003-11-03 A method of rapidly thermally annealing multilayer wafers with an edge

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR0213810A FR2846786B1 (en) 2002-11-05 2002-11-05 PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS
FRFR02/13810 2002-11-05
FR0300286A FR2846787B1 (en) 2002-11-05 2003-01-13 PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS
FRFR03/00286 2003-01-13

Publications (2)

Publication Number Publication Date
WO2004042802A2 WO2004042802A2 (en) 2004-05-21
WO2004042802A3 true WO2004042802A3 (en) 2004-08-12

Family

ID=32109208

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/005295 Ceased WO2004042802A2 (en) 2002-11-05 2003-11-03 A method of rapidly thermally annealing multilayer wafers with an edge

Country Status (10)

Country Link
US (2) US6853802B2 (en)
EP (2) EP1559136B1 (en)
JP (1) JP4772501B2 (en)
KR (1) KR100814998B1 (en)
CN (1) CN100541739C (en)
AT (1) ATE528790T1 (en)
AU (1) AU2003280109A1 (en)
FR (2) FR2846786B1 (en)
TW (1) TWI278937B (en)
WO (1) WO2004042802A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2846786B1 (en) * 2002-11-05 2005-06-17 PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7127367B2 (en) * 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
JP4826994B2 (en) * 2004-09-13 2011-11-30 信越半導体株式会社 Manufacturing method of SOI wafer
US7788589B2 (en) * 2004-09-30 2010-08-31 Microsoft Corporation Method and system for improved electronic task flagging and management
EP1831922B9 (en) * 2004-12-28 2010-02-24 S.O.I.Tec Silicon on Insulator Technologies Method for obtaining a thin layer having a low density of holes
FR2880988B1 (en) * 2005-01-19 2007-03-30 Soitec Silicon On Insulator TREATMENT OF A LAYER IN SI1-yGEy TAKEN
JP4786925B2 (en) * 2005-04-04 2011-10-05 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US7700376B2 (en) * 2005-04-06 2010-04-20 Applied Materials, Inc. Edge temperature compensation in thermal processing particularly useful for SOI wafers
ATE405946T1 (en) * 2005-06-10 2008-09-15 Soitec Silicon On Insulator CALIBRATION METHOD FOR THERMAL TREATMENT APPARATUS
FR2895563B1 (en) * 2005-12-22 2008-04-04 Soitec Silicon On Insulator METHOD FOR SIMPLIFYING A FINISHING SEQUENCE AND STRUCTURE OBTAINED BY THE METHOD
JP5168788B2 (en) * 2006-01-23 2013-03-27 信越半導体株式会社 Manufacturing method of SOI wafer
FR2899382B1 (en) * 2006-03-29 2008-08-22 Soitec Silicon On Insulator METHOD OF MANUFACTURING SOIL STRUCTURES WITH LIMITATION OF SLIDING LINES
EP1918349A1 (en) * 2006-10-12 2008-05-07 SOLVAY (Société Anonyme) Light-emitting material
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US8111978B2 (en) * 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
FR2941324B1 (en) * 2009-01-22 2011-04-29 Soitec Silicon On Insulator PROCESS FOR DISSOLVING THE OXIDE LAYER IN THE CROWN OF A SEMICONDUCTOR TYPE STRUCTURE ON AN INSULATION
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
CN102479690B (en) * 2010-11-23 2013-12-11 中芯国际集成电路制造(上海)有限公司 Method for improving uniformity of working current on wafer during source drain annealing
US9814099B2 (en) * 2013-08-02 2017-11-07 Applied Materials, Inc. Substrate support with surface feature for reduced reflection and manufacturing techniques for producing same
US11598021B2 (en) * 2015-10-01 2023-03-07 Globalwafers Co., Ltd. CVD apparatus
CN115910866A (en) * 2022-12-07 2023-04-04 西安奕斯伟材料科技有限公司 Production control method and device for epitaxial wafer

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958061A (en) * 1988-06-27 1990-09-18 Tokyo Electron Limited Method and apparatus for heat-treating a substrate
EP0399662A2 (en) * 1989-05-01 1990-11-28 AT&T Corp. Procedure for annealing of semiconductors
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6051512A (en) * 1997-04-11 2000-04-18 Steag Rtp Systems Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers
US6184498B1 (en) * 1996-03-25 2001-02-06 Sumitomo Electric Industries, Ltd. Apparatus for thermally processing semiconductor wafer
WO2001069656A2 (en) * 2000-03-17 2001-09-20 Mattson Thermal Products Inc. Localized heating and cooling of substrates
US20010036219A1 (en) * 1999-05-03 2001-11-01 Camm David Malcolm Spatially resolved temperature measurement and irradiance control
EP1197989A2 (en) * 2000-10-10 2002-04-17 Ushiodenki Kabushiki Kaisha Heat treatment device and process with light irradiation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128525A (en) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd Annealing method for compound semiconductor substrate
KR100194267B1 (en) * 1990-01-19 1999-06-15 버킷 이.모리스 Semiconductor Wafer or Substrate Heating Apparatus and Method
DE19936081A1 (en) * 1999-07-30 2001-02-08 Siemens Ag Device and method for tempering a multilayer body, and a multilayer body produced using the method
EP1189266B1 (en) * 2000-03-29 2017-04-05 Shin-Etsu Handotai Co., Ltd. Production method for silicon wafer and soi wafer, and soi wafer
JP2002184961A (en) * 2000-09-29 2002-06-28 Canon Inc Heat treatment method for SOI substrate and SOI substrate
TW540121B (en) * 2000-10-10 2003-07-01 Ushio Electric Inc Heat treatment device and process with light irradiation
FR2846786B1 (en) * 2002-11-05 2005-06-17 PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958061A (en) * 1988-06-27 1990-09-18 Tokyo Electron Limited Method and apparatus for heat-treating a substrate
EP0399662A2 (en) * 1989-05-01 1990-11-28 AT&T Corp. Procedure for annealing of semiconductors
US6184498B1 (en) * 1996-03-25 2001-02-06 Sumitomo Electric Industries, Ltd. Apparatus for thermally processing semiconductor wafer
US6235543B1 (en) * 1996-03-25 2001-05-22 Sumitomo Electric Industries, Ltd. Method of evaluating a semiconductor wafer
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6051512A (en) * 1997-04-11 2000-04-18 Steag Rtp Systems Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers
US20010036219A1 (en) * 1999-05-03 2001-11-01 Camm David Malcolm Spatially resolved temperature measurement and irradiance control
WO2001069656A2 (en) * 2000-03-17 2001-09-20 Mattson Thermal Products Inc. Localized heating and cooling of substrates
EP1197989A2 (en) * 2000-10-10 2002-04-17 Ushiodenki Kabushiki Kaisha Heat treatment device and process with light irradiation

Also Published As

Publication number Publication date
KR100814998B1 (en) 2008-03-18
US7049250B2 (en) 2006-05-23
JP2006505959A (en) 2006-02-16
ATE528790T1 (en) 2011-10-15
CN1711629A (en) 2005-12-21
US20050094990A1 (en) 2005-05-05
WO2004042802A2 (en) 2004-05-21
FR2846787B1 (en) 2005-12-30
EP1559136B1 (en) 2011-10-12
FR2846786A1 (en) 2004-05-07
EP2330616A3 (en) 2011-12-07
FR2846786B1 (en) 2005-06-17
TWI278937B (en) 2007-04-11
JP4772501B2 (en) 2011-09-14
KR20050062653A (en) 2005-06-23
US20040151483A1 (en) 2004-08-05
AU2003280109A1 (en) 2004-06-07
TW200416895A (en) 2004-09-01
FR2846787A1 (en) 2004-05-07
EP2330616A2 (en) 2011-06-08
EP1559136A2 (en) 2005-08-03
CN100541739C (en) 2009-09-16
AU2003280109A8 (en) 2004-06-07
US6853802B2 (en) 2005-02-08

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