WO2004050546A3 - Herstellen von mikroelektromechanischen systemen (mems) über ein silizium-hochtemperatur-fusionsbonden von scheiben - Google Patents

Herstellen von mikroelektromechanischen systemen (mems) über ein silizium-hochtemperatur-fusionsbonden von scheiben Download PDF

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Publication number
WO2004050546A3
WO2004050546A3 PCT/DE2003/004015 DE0304015W WO2004050546A3 WO 2004050546 A3 WO2004050546 A3 WO 2004050546A3 DE 0304015 W DE0304015 W DE 0304015W WO 2004050546 A3 WO2004050546 A3 WO 2004050546A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
sensor
permanent magnet
sensorless control
magnet machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2003/004015
Other languages
English (en)
French (fr)
Other versions
WO2004050546A2 (de
Inventor
Uwe Schwarz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab Semiconductor Foundries GmbH
Original Assignee
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries GmbH filed Critical X Fab Semiconductor Foundries GmbH
Priority to AU2003289821A priority Critical patent/AU2003289821A1/en
Priority to US10/537,211 priority patent/US20060255901A1/en
Priority to DE50309177T priority patent/DE50309177D1/de
Priority to EP03782134A priority patent/EP1569865B8/de
Publication of WO2004050546A2 publication Critical patent/WO2004050546A2/de
Publication of WO2004050546A3 publication Critical patent/WO2004050546A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0728—Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
  • Gyroscopes (AREA)
  • Permanent Magnet Type Synchronous Machine (AREA)
  • Control Of Electric Motors In General (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ceramic Products (AREA)

Abstract

Es wird ein Verfahren zur Herstellung eines mikroelektromechanischen Systems (Microelectromechanical System: MEMS) beschrieben, das monolithisch integriert den Sensor mit der sensorsignalverarbeitenden Elektronik auf CMOS-Technologie-Basis enthält. Durch Verbinden einer Vertiefungen besitzenden Halbleiterscheibe (2) mit einer eine Epitaxieschicht tragenden Scheibe über die Epitaxieschicht (3) mittels Hochtemperatur-Fusionsbonden zu einer Doppelscheibe und anschliessenden einseitigen Abtrag der Doppelscheibe mit nachfolgender Politur bis zur Freilegung der Epitaxieschicht bei gleichzeitiger Schaffung einer Membran (3a), werden die Voraussetzungen geschaffen, um den elektronischen Teil (4) des Sensors (5) und die signalverarbeitende Elektronik mit CMOS-Technologieverfahren zu realisieren.
PCT/DE2003/004015 2002-12-05 2003-12-05 Herstellen von mikroelektromechanischen systemen (mems) über ein silizium-hochtemperatur-fusionsbonden von scheiben Ceased WO2004050546A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003289821A AU2003289821A1 (en) 2002-12-05 2003-12-05 System for sensorless control in a permanent magnet machine
US10/537,211 US20060255901A1 (en) 2002-12-05 2003-12-05 Production of microelectromechanical systems (mems) using the high-temperature silicon fusion bonding of wafers
DE50309177T DE50309177D1 (de) 2002-12-05 2003-12-05 Herstellen von mikroelektromechanischen Systemen (MEMS) über ein Silizium-Hochtemperatur-Fusionsbonden von Scheiben
EP03782134A EP1569865B8 (de) 2002-12-05 2003-12-05 Herstellen von mikroelektromechanischen Systemen (MEMS) über ein Silizium-Hochtemperatur-Fusionsbonden von Scheiben

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10257097.3 2002-12-05
DE10257097A DE10257097B4 (de) 2002-12-05 2002-12-05 Verfahren zur Herstellung von mikroelektromechanischen Systemen (Microelectromechanical Systems: MEMS) mittels Silizium-Hochtemperatur-Fusionsbonden

Publications (2)

Publication Number Publication Date
WO2004050546A2 WO2004050546A2 (de) 2004-06-17
WO2004050546A3 true WO2004050546A3 (de) 2004-12-23

Family

ID=32336061

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/004015 Ceased WO2004050546A2 (de) 2002-12-05 2003-12-05 Herstellen von mikroelektromechanischen systemen (mems) über ein silizium-hochtemperatur-fusionsbonden von scheiben

Country Status (6)

Country Link
US (1) US20060255901A1 (de)
EP (1) EP1569865B8 (de)
AT (1) ATE385997T1 (de)
AU (1) AU2003289821A1 (de)
DE (2) DE10257097B4 (de)
WO (1) WO2004050546A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622782B2 (en) 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same
US20070269959A1 (en) * 2006-05-16 2007-11-22 Freeman John E Method of aligning mask layers to buried features
DE102007025649B4 (de) 2007-07-21 2011-03-03 X-Fab Semiconductor Foundries Ag Verfahren zum Übertragen einer Epitaxie-Schicht von einer Spender- auf eine Systemscheibe der Mikrosystemtechnik
EA017382B1 (ru) * 2007-08-29 2012-12-28 Кристофер Джон Фаррелл Ортодонтический аппарат
US8002315B2 (en) * 2009-12-23 2011-08-23 General Electric Corporation Device for measuring fluid properties in caustic environments
CN102221326B (zh) * 2010-04-13 2013-09-18 精量电子（深圳）有限公司 一种使用微熔技术制造应变片传感器的方法
DE102012013096A1 (de) * 2012-06-30 2014-01-02 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von komplexen mikroelektromechanischen Systemen
CN111170263B (zh) * 2018-11-12 2024-04-09 中国科学院微电子研究所 半导体器件与其制作方法
DE102021105476B3 (de) 2021-03-08 2022-03-17 Infineon Technologies Dresden GmbH & Co. KG Verfahren zur herstellung eines halbleiterbauelements und halbleiterbauelement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463336A (en) * 1981-12-28 1984-07-31 United Technologies Corporation Ultra-thin microelectronic pressure sensors
WO2000036385A1 (de) * 1998-12-15 2000-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
EP0683921B1 (de) * 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Mikrostrukturen und einzelmask, einkristall-herstellungsverfahren
DE4318407A1 (de) * 1993-06-03 1994-12-08 Rossendorf Forschzent Mikrokapillare mit integrierten chemischen Mikrosensoren und Verfahren zu ihrer Herstellung
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6012336A (en) * 1995-09-06 2000-01-11 Sandia Corporation Capacitance pressure sensor
EP0951068A1 (de) * 1998-04-17 1999-10-20 Interuniversitair Micro-Elektronica Centrum Vzw Herstellungsverfahren für eine Mikrostruktur mit Innenraum
US6291314B1 (en) * 1998-06-23 2001-09-18 Silicon Genesis Corporation Controlled cleavage process and device for patterned films using a release layer
DE19927970A1 (de) * 1998-12-15 2000-06-29 Fraunhofer Ges Forschung Verfahren zum Erzeugen eines mikro-elektromechanischen Elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463336A (en) * 1981-12-28 1984-07-31 United Technologies Corporation Ultra-thin microelectronic pressure sensors
WO2000036385A1 (de) * 1998-12-15 2000-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARAMESWARAN L ET AL: "A merged MEMS-CMOS process using silicon wafer bonding", ELECTRON DEVICES MEETING, 1995., INTERNATIONAL WASHINGTON, DC, USA 10-13 DEC. 1995, NEW YORK, NY, USA,IEEE, US, 10 December 1995 (1995-12-10), pages 613 - 616, XP010161161, ISBN: 0-7803-2700-4 *
PETERSEN K ET AL: "Fabrication of SOI wafers with buried cavities using silicon fusion bonding and electrochemical etchback", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 54, no. 1-3, 1 June 1996 (1996-06-01), pages 709 - 713, XP004077953, ISSN: 0924-4247 *

Also Published As

Publication number Publication date
WO2004050546A2 (de) 2004-06-17
DE10257097B4 (de) 2005-12-22
EP1569865A2 (de) 2005-09-07
DE50309177D1 (de) 2008-03-27
ATE385997T1 (de) 2008-03-15
AU2003289821A1 (en) 2004-06-23
EP1569865B1 (de) 2008-02-13
DE10257097A1 (de) 2004-06-24
EP1569865B8 (de) 2008-06-18
AU2003289821A8 (en) 2004-06-23
US20060255901A1 (en) 2006-11-16

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