WO2004068148A3 - Method of and apparatus for measurement and control of a gas cluster ion beam - Google Patents

Method of and apparatus for measurement and control of a gas cluster ion beam Download PDF

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Publication number
WO2004068148A3
WO2004068148A3 PCT/US2004/002196 US2004002196W WO2004068148A3 WO 2004068148 A3 WO2004068148 A3 WO 2004068148A3 US 2004002196 W US2004002196 W US 2004002196W WO 2004068148 A3 WO2004068148 A3 WO 2004068148A3
Authority
WO
WIPO (PCT)
Prior art keywords
cluster ion
average
ion beam
gas cluster
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/002196
Other languages
French (fr)
Other versions
WO2004068148A2 (en
Inventor
David R Swenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TEL Epion Inc
Original Assignee
TEL Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Epion Inc filed Critical TEL Epion Inc
Priority to JP2006503056A priority Critical patent/JP4449064B2/en
Priority to EP04705610A priority patent/EP1597568A2/en
Publication of WO2004068148A2 publication Critical patent/WO2004068148A2/en
Publication of WO2004068148A3 publication Critical patent/WO2004068148A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Methods and apparatus (300) are disclosed for measuring controlling characteristics of clusters in a cluster ion beam (306), including average cluster ion velocity v, average cluster ion mass m, average cluster ion energy E, average cluster ion charge state q, average cluster ion mass per charge (m/q)average, and average energy/charge (E/q)average. The measurements are employed in gas cluster ion beam processing systems to monitor and control gas cluster ion beam characteristics that are critical for optimal processing of workpieces by gas cluster ion beam irradiation.
PCT/US2004/002196 2003-01-27 2004-01-27 Method of and apparatus for measurement and control of a gas cluster ion beam Ceased WO2004068148A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006503056A JP4449064B2 (en) 2003-01-27 2004-01-27 Method and apparatus for measuring and controlling a gas cluster ion beam
EP04705610A EP1597568A2 (en) 2003-01-27 2004-01-27 Method of and apparatus for measurement and control of a gas cluster ion beam

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44285403P 2003-01-27 2003-01-27
US60/442,854 2003-01-27

Publications (2)

Publication Number Publication Date
WO2004068148A2 WO2004068148A2 (en) 2004-08-12
WO2004068148A3 true WO2004068148A3 (en) 2005-01-27

Family

ID=32825267

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/002196 Ceased WO2004068148A2 (en) 2003-01-27 2004-01-27 Method of and apparatus for measurement and control of a gas cluster ion beam

Country Status (4)

Country Link
US (1) US7067828B2 (en)
EP (1) EP1597568A2 (en)
JP (1) JP4449064B2 (en)
WO (1) WO2004068148A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004107425A1 (en) * 2003-05-28 2004-12-09 Kyoto University Surface treating method using ion beam and surface treating device
JP4654635B2 (en) * 2003-08-25 2011-03-23 株式会社日立製作所 Cluster ion irradiation apparatus and magnetic head manufacturing method using the same
WO2007065134A2 (en) * 2005-12-01 2007-06-07 Epion Corporation Method and apparatus for scanning a workpiece through an ion beam
US7550749B2 (en) * 2007-03-30 2009-06-23 Tel Epion Inc. Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool
US7550748B2 (en) * 2007-03-30 2009-06-23 Tel Epion, Inc. Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam
US7566888B2 (en) * 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US7696495B2 (en) * 2007-09-28 2010-04-13 Tel Epion Inc. Method and device for adjusting a beam property in a gas cluster ion beam system
US7825389B2 (en) * 2007-12-04 2010-11-02 Tel Epion Inc. Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture
US8481961B2 (en) * 2008-02-14 2013-07-09 The Regents Of The University Of California Shielded capacitive electrode
WO2010008700A2 (en) * 2008-06-24 2010-01-21 Tel Epion Inc. Method and system for growing a thin film using a gas cluster ion beam
US8049168B2 (en) * 2008-12-18 2011-11-01 Varian Semiconductor Equipment Associates, Inc. Time-of-flight segmented Faraday
US8981322B2 (en) * 2009-02-04 2015-03-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
EP2771907B1 (en) * 2011-10-26 2016-08-31 Exogenesis Corporation Diagnostic method and apparatus for characterization of a neutral beam and for process control therewith
JP5954025B2 (en) * 2012-08-01 2016-07-20 富士通株式会社 Control device, control method and system
EP2952070B1 (en) * 2013-02-04 2018-05-30 Exogenesis Corporation Method and apparatus for directing a neutral beam
US9540725B2 (en) * 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
US10573501B2 (en) * 2015-05-29 2020-02-25 Waters Technologies Corporation Techniques for processing of mass spectral data
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
CN117144317B (en) * 2023-09-11 2024-04-12 浙江积嘉光电有限公司 Assembly, method and system for use in a magnetron sputtering process
JP7609499B1 (en) * 2024-06-14 2025-01-07 株式会社オプトラン Solid surface treatment device and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559096A (en) * 1984-06-25 1985-12-17 The United States Of America As Represented By The United States Department Of Energy Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith
US5153430A (en) * 1991-09-30 1992-10-06 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for measuring the momentum, energy, power, and power density profile of intense particle beams
US5644220A (en) * 1994-02-11 1997-07-01 Balzers Aktiengesellschaft Process and apparatus for measuring charge quantity flowing in a vacuum
US5814194A (en) * 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US6060718A (en) * 1998-02-26 2000-05-09 Eaton Corporation Ion source having wide output current operating range

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003527614A (en) * 2000-03-20 2003-09-16 エピオン コーポレイション Cluster size measuring instrument and cluster ion beam diagnostic method
JP2004507037A (en) * 2000-07-14 2004-03-04 エピオン　コーポレイション Diagnosis of GCIB size and workpiece processing
JP2004504691A (en) * 2000-07-14 2004-02-12 エピオン　コーポレイション GCIB size diagnosis and processed product processing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559096A (en) * 1984-06-25 1985-12-17 The United States Of America As Represented By The United States Department Of Energy Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith
US5153430A (en) * 1991-09-30 1992-10-06 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for measuring the momentum, energy, power, and power density profile of intense particle beams
US5644220A (en) * 1994-02-11 1997-07-01 Balzers Aktiengesellschaft Process and apparatus for measuring charge quantity flowing in a vacuum
US5814194A (en) * 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US6060718A (en) * 1998-02-26 2000-05-09 Eaton Corporation Ion source having wide output current operating range

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MACK M.E. ET AL.: "Design issue in gas cluster ion beamlines. Ion implantation technology", PROCEEDINGS OF THE 14TH INTERNATIONAL CCONFERENCE ON, 22 September 2002 (2002-09-22) - 27 September 2002 (2002-09-27), pages 665 - 668, XP010677023 *
TOYODA N. ET AL.: "Surface processing by gas cluster ion beams. Ion implantation technology", PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON AUSTIN, 16 June 1996 (1996-06-16) - 21 June 1996 (1996-06-21), pages 808 - 811, XP010220658 *

Also Published As

Publication number Publication date
EP1597568A2 (en) 2005-11-23
US7067828B2 (en) 2006-06-27
WO2004068148A2 (en) 2004-08-12
JP4449064B2 (en) 2010-04-14
US20040222389A1 (en) 2004-11-11
JP2006519982A (en) 2006-08-31

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