WO2004102642A3 - Envelope follower end point detection in time division multiplexed processes - Google Patents

Envelope follower end point detection in time division multiplexed processes Download PDF

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Publication number
WO2004102642A3
WO2004102642A3 PCT/US2004/014308 US2004014308W WO2004102642A3 WO 2004102642 A3 WO2004102642 A3 WO 2004102642A3 US 2004014308 W US2004014308 W US 2004014308W WO 2004102642 A3 WO2004102642 A3 WO 2004102642A3
Authority
WO
WIPO (PCT)
Prior art keywords
time division
division multiplexed
envelope follower
end point
point detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/014308
Other languages
French (fr)
Other versions
WO2004102642A2 (en
Inventor
Russell Westerman
David Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Management USA Inc
Original Assignee
Unaxis USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis USA Inc filed Critical Unaxis USA Inc
Priority to EP04751610A priority Critical patent/EP1623457B1/en
Priority to JP2006532855A priority patent/JP2007501532A/en
Priority to DE602004017983T priority patent/DE602004017983D1/en
Publication of WO2004102642A2 publication Critical patent/WO2004102642A2/en
Publication of WO2004102642A3 publication Critical patent/WO2004102642A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00587—Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Television Systems (AREA)
  • Supplying Of Containers To The Packaging Station (AREA)
  • ing And Chemical Polishing (AREA)
  • Time-Division Multiplex Systems (AREA)

Abstract

The present invention provides a method for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a deposition step. A variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. An amplitude information is extracted from a complex waveform of the plasma emission intensity using an envelope follower algorithm. The alternating cyclical process is discontinued when endpoint is reached at a time that is based on the monitoring step.
PCT/US2004/014308 2003-05-09 2004-05-06 Envelope follower end point detection in time division multiplexed processes Ceased WO2004102642A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04751610A EP1623457B1 (en) 2003-05-09 2004-05-06 Endpoint detection in time division multiplexed processes using an envelope follower algorithm
JP2006532855A JP2007501532A (en) 2003-05-09 2004-05-06 Envelope follower end point detection in time division multiplexing process
DE602004017983T DE602004017983D1 (en) 2003-05-09 2004-05-06 Endpoint Detection in a Time-Division Multiplexed Method Using an Envelope Algorithm

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46933303P 2003-05-09 2003-05-09
US60/469,333 2003-05-09

Publications (2)

Publication Number Publication Date
WO2004102642A2 WO2004102642A2 (en) 2004-11-25
WO2004102642A3 true WO2004102642A3 (en) 2005-06-23

Family

ID=33452276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/014308 Ceased WO2004102642A2 (en) 2003-05-09 2004-05-06 Envelope follower end point detection in time division multiplexed processes

Country Status (8)

Country Link
US (1) US7101805B2 (en)
EP (1) EP1623457B1 (en)
JP (2) JP2007501532A (en)
CN (1) CN100401491C (en)
AT (1) ATE415702T1 (en)
DE (1) DE602004017983D1 (en)
TW (1) TWI319207B (en)
WO (1) WO2004102642A2 (en)

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US8691702B2 (en) 2011-03-14 2014-04-08 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
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JP6002487B2 (en) * 2012-07-20 2016-10-05 株式会社日立ハイテクノロジーズ Analysis method, analysis apparatus, and etching processing system
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JP6239294B2 (en) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ Plasma processing apparatus and method of operating plasma processing apparatus
US9209178B2 (en) * 2013-11-25 2015-12-08 International Business Machines Corporation finFET isolation by selective cyclic etch
WO2016057990A2 (en) * 2014-10-10 2016-04-14 Orthobond, Inc. Method for detecting and analyzing surface films
EP3038132B1 (en) * 2014-12-22 2020-03-11 IMEC vzw Method and apparatus for real-time monitoring of plasma etch uniformity
US10408763B2 (en) * 2015-01-30 2019-09-10 Mécanique Analytique Inc. Systems and methods for testing for a gas leak through a gas flow component
JP6356615B2 (en) * 2015-02-06 2018-07-11 東芝メモリ株式会社 Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP6549917B2 (en) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ Plasma processing apparatus and data analysis apparatus therefor
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
JP6479713B2 (en) * 2016-07-11 2019-03-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, program, and substrate processing apparatus
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JP7580046B2 (en) * 2021-01-19 2024-11-11 パナソニックＩｐマネジメント株式会社 Plasma etching method, plasma etching apparatus, and method for manufacturing element chip
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110246743B (en) * 2014-10-20 2022-12-20 朗姆研究公司 Systems and methods for detecting processing points in multimodal pulse processing

Also Published As

Publication number Publication date
EP1623457B1 (en) 2008-11-26
DE602004017983D1 (en) 2009-01-08
US7101805B2 (en) 2006-09-05
US20040238489A1 (en) 2004-12-02
CN100401491C (en) 2008-07-09
JP2007501532A (en) 2007-01-25
ATE415702T1 (en) 2008-12-15
CN1784778A (en) 2006-06-07
JP2010251813A (en) 2010-11-04
WO2004102642A2 (en) 2004-11-25
EP1623457A2 (en) 2006-02-08
TWI319207B (en) 2010-01-01
TW200511429A (en) 2005-03-16

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