WO2004109771A3 - Stackable semiconductor device and method of manufacturing the same - Google Patents

Stackable semiconductor device and method of manufacturing the same Download PDF

Info

Publication number
WO2004109771A3
WO2004109771A3 PCT/JP2004/007862 JP2004007862W WO2004109771A3 WO 2004109771 A3 WO2004109771 A3 WO 2004109771A3 JP 2004007862 W JP2004007862 W JP 2004007862W WO 2004109771 A3 WO2004109771 A3 WO 2004109771A3
Authority
WO
WIPO (PCT)
Prior art keywords
base plate
manufacturing
same
semiconductor device
interconnections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/007862
Other languages
French (fr)
Other versions
WO2004109771A2 (en
Inventor
Hiroyasu Jobetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to EP04735511A priority Critical patent/EP1636842B1/en
Priority to HK06106292.6A priority patent/HK1086386B/en
Publication of WO2004109771A2 publication Critical patent/WO2004109771A2/en
Publication of WO2004109771A3 publication Critical patent/WO2004109771A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01255Changing the shapes of bumps by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • H10W72/01331Manufacture or treatment of die-attach connectors using blanket deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A semiconductor package includes a base plate, at least one semiconductor constructing body which is formed on one surface of the base plate and has a plurality of external connection electrodes formed on a semiconductor substrate, an insulating layer which is formed on one surface of the base plate around the semiconductor constructing body, upper interconnections which are formed on the insulating layer and each includes at least one interconnection layer, at least some of the upper interconnections are connected to the external connection electrodes of the semiconductor constructing body, lower interconnections which are formed on the other surface of the base plate and each includes at least one interconnection layer, and at least some of the lower interconnections which are electrically connected to the upper interconnections.
PCT/JP2004/007862 2003-06-03 2004-05-31 Stackable semiconductor device and method of manufacturing the same Ceased WO2004109771A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04735511A EP1636842B1 (en) 2003-06-03 2004-05-31 Stackable semiconductor device and method of manufacturing the same
HK06106292.6A HK1086386B (en) 2003-06-03 2004-05-31 Stackable semiconductor device and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-158489 2003-06-03
JP2003158489 2003-06-03

Publications (2)

Publication Number Publication Date
WO2004109771A2 WO2004109771A2 (en) 2004-12-16
WO2004109771A3 true WO2004109771A3 (en) 2005-03-24

Family

ID=33487434

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/007862 Ceased WO2004109771A2 (en) 2003-06-03 2004-05-31 Stackable semiconductor device and method of manufacturing the same

Country Status (6)

Country Link
US (2) US7709942B2 (en)
EP (1) EP1636842B1 (en)
KR (1) KR100778597B1 (en)
CN (1) CN100468719C (en)
TW (1) TWI247373B (en)
WO (1) WO2004109771A2 (en)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208825B2 (en) * 2003-01-22 2007-04-24 Siliconware Precision Industries Co., Ltd. Stacked semiconductor packages
TWI278048B (en) * 2003-11-10 2007-04-01 Casio Computer Co Ltd Semiconductor device and its manufacturing method
JP4093186B2 (en) * 2004-01-27 2008-06-04 カシオ計算機株式会社 Manufacturing method of semiconductor device
JP3945483B2 (en) 2004-01-27 2007-07-18 カシオ計算機株式会社 Manufacturing method of semiconductor device
JP3925809B2 (en) * 2004-03-31 2007-06-06 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof
US7215018B2 (en) 2004-04-13 2007-05-08 Vertical Circuits, Inc. Stacked die BGA or LGA component assembly
JP4398305B2 (en) * 2004-06-02 2010-01-13 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof
JP2006173232A (en) * 2004-12-14 2006-06-29 Casio Comput Co Ltd Semiconductor device and manufacturing method thereof
KR100621438B1 (en) * 2005-08-31 2006-09-08 삼성전자주식회사 Laminated chip package using photosensitive polymer and manufacturing method thereof
JP4395775B2 (en) * 2005-10-05 2010-01-13 ソニー株式会社 Semiconductor device and manufacturing method thereof
JP4750586B2 (en) 2006-02-28 2011-08-17 住友電工デバイス・イノベーション株式会社 Semiconductor device, electronic device and manufacturing method thereof
GB0613360D0 (en) 2006-07-05 2006-08-16 Iti Scotland Ltd Bar code authentication
JP4956128B2 (en) * 2006-10-02 2012-06-20 ルネサスエレクトロニクス株式会社 Manufacturing method of electronic device
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
KR100852603B1 (en) * 2006-12-27 2008-08-14 동부일렉트로닉스 주식회사 Semiconductor device and manufacturing method
US7952195B2 (en) 2006-12-28 2011-05-31 Tessera, Inc. Stacked packages with bridging traces
JP2008226945A (en) * 2007-03-09 2008-09-25 Casio Comput Co Ltd Semiconductor device and manufacturing method thereof
US8723332B2 (en) * 2007-06-11 2014-05-13 Invensas Corporation Electrically interconnected stacked die assemblies
US8237259B2 (en) * 2007-06-13 2012-08-07 Infineon Technologies Ag Embedded chip package
CN101809739B (en) 2007-07-27 2014-08-20 泰塞拉公司 Reconstituted wafer stack packaging with after-applied pad extensions
WO2009020572A2 (en) * 2007-08-03 2009-02-12 Tessera Technologies Hungary Kft. Stack packages using reconstituted wafers
JP2009043857A (en) * 2007-08-08 2009-02-26 Casio Comput Co Ltd Semiconductor device and manufacturing method thereof
US20090039514A1 (en) * 2007-08-08 2009-02-12 Casio Computer Co., Ltd. Semiconductor device and method for manufacturing the same
US8043895B2 (en) 2007-08-09 2011-10-25 Tessera, Inc. Method of fabricating stacked assembly including plurality of stacked microelectronic elements
KR100885924B1 (en) 2007-08-10 2009-02-26 삼성전자주식회사 Semiconductor package including buried conductive posts and manufacturing method thereof
JP4752825B2 (en) * 2007-08-24 2011-08-17 カシオ計算機株式会社 Manufacturing method of semiconductor device
US8704379B2 (en) 2007-09-10 2014-04-22 Invensas Corporation Semiconductor die mount by conformal die coating
JP4840373B2 (en) * 2008-01-31 2011-12-21 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof
JP4636090B2 (en) 2008-01-31 2011-02-23 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof
CN101946318B (en) * 2008-02-14 2014-01-08 三菱重工业株式会社 Semiconductor element module and method for manufacturing the same
TWI422058B (en) * 2008-03-04 2014-01-01 億光電子工業股份有限公司 Light-emitting diode package structure and manufacturing method thereof
KR100927773B1 (en) 2008-03-11 2009-11-20 앰코 테크놀로지 코리아 주식회사 Semiconductor package and manufacturing method thereof
TWI515863B (en) 2008-03-12 2016-01-01 英維瑟斯公司 Carrier mounted electrical interconnect die component
US7863159B2 (en) 2008-06-19 2011-01-04 Vertical Circuits, Inc. Semiconductor die separation method
US9153517B2 (en) 2008-05-20 2015-10-06 Invensas Corporation Electrical connector between die pad and z-interconnect for stacked die assemblies
JP5639052B2 (en) 2008-06-16 2014-12-10 テッセラ,インコーポレイテッド Edge stacking at wafer level
US8466542B2 (en) 2009-03-13 2013-06-18 Tessera, Inc. Stacked microelectronic assemblies having vias extending through bond pads
FR2946795B1 (en) * 2009-06-12 2011-07-22 3D Plus METHOD FOR POSITIONING CHIPS WHEN MANUFACTURING A RECONSTITUTED PLATE
US8680687B2 (en) 2009-06-26 2014-03-25 Invensas Corporation Electrical interconnect for die stacked in zig-zag configuration
US9147583B2 (en) 2009-10-27 2015-09-29 Invensas Corporation Selective die electrical insulation by additive process
TWI544604B (en) 2009-11-04 2016-08-01 英維瑟斯公司 Stacked die assembly with reduced stress electrical interconnection
US8987896B2 (en) * 2009-12-16 2015-03-24 Intel Corporation High-density inter-package connections for ultra-thin package-on-package structures, and processes of forming same
JP5563814B2 (en) * 2009-12-18 2014-07-30 新光電気工業株式会社 Semiconductor device and manufacturing method thereof
US8343810B2 (en) * 2010-08-16 2013-01-01 Stats Chippac, Ltd. Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers
DE102010041129A1 (en) * 2010-09-21 2012-03-22 Robert Bosch Gmbh Multifunction sensor as PoP mWLP
US9601434B2 (en) 2010-12-10 2017-03-21 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming openings through insulating layer over encapsulant for enhanced adhesion of interconnect structure
TWI458026B (en) * 2012-01-13 2014-10-21 東琳精密股份有限公司 Package module with embedded package and manufacturing method thereof
US8901730B2 (en) 2012-05-03 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for package on package devices
US9343442B2 (en) 2012-09-20 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Passive devices in package-on-package structures and methods for forming the same
US9312231B2 (en) * 2013-10-31 2016-04-12 Freescale Semiconductor, Inc. Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process
US9698116B2 (en) 2014-10-31 2017-07-04 Nxp Usa, Inc. Thick-silver layer interface for a semiconductor die and corresponding thermal layer
JP6695066B2 (en) * 2014-11-27 2020-05-20 ツーハイ アクセス セミコンダクター カンパニー リミテッド Polymer frame for chips such that the frame comprises at least one via in series with a capacitor
TW201526315A (en) * 2015-02-17 2015-07-01 黃秀璋 Flip-chip type light-emitting diode and manufacturing method thereof
US9490195B1 (en) 2015-07-17 2016-11-08 Invensas Corporation Wafer-level flipped die stacks with leadframes or metal foil interconnects
US9825002B2 (en) 2015-07-17 2017-11-21 Invensas Corporation Flipped die stack
US9871019B2 (en) 2015-07-17 2018-01-16 Invensas Corporation Flipped die stack assemblies with leadframe interconnects
US9508691B1 (en) 2015-12-16 2016-11-29 Invensas Corporation Flipped die stacks with multiple rows of leadframe interconnects
US10566310B2 (en) 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
US9595511B1 (en) 2016-05-12 2017-03-14 Invensas Corporation Microelectronic packages and assemblies with improved flyby signaling operation
US9728524B1 (en) 2016-06-30 2017-08-08 Invensas Corporation Enhanced density assembly having microelectronic packages mounted at substantial angle to board
US10211137B2 (en) 2017-06-08 2019-02-19 Advanced Semiconductor Engineering, Inc. Semiconductor device package
JP6760518B2 (en) * 2017-11-17 2020-09-23 三菱電機株式会社 Semiconductor module
US11315891B2 (en) 2018-03-23 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor packages having a die with an encapsulant
DE102018123924A1 (en) * 2018-09-27 2020-04-02 Infineon Technologies Ag A semiconductor device with a solder joint having a Sn / Sb connection
US11056443B2 (en) 2019-08-29 2021-07-06 Micron Technology, Inc. Apparatuses exhibiting enhanced stress resistance and planarity, and related methods
CN112701444B (en) * 2019-10-22 2022-06-28 华为技术有限公司 Antenna, antenna packaging method and terminal
US11903145B2 (en) * 2020-12-31 2024-02-13 Samsung Electronics Co., Ltd. Wiring board and semiconductor module including the same
JP7410898B2 (en) * 2021-03-11 2024-01-10 アオイ電子株式会社 Semiconductor device manufacturing method and semiconductor device
US12557711B2 (en) * 2022-02-18 2026-02-17 Unimicron Technology Corp. Electronic package structure and manufacturing method thereof
KR20240011532A (en) 2022-07-19 2024-01-26 삼성전자주식회사 Semiconductor package and method of manufacturing the same
US20240153897A1 (en) * 2022-11-04 2024-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with advanced pad structure and method for forming same

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337027A (en) * 1992-12-18 1994-08-09 General Electric Company Microwave HDI phase shifter
JPH10100026A (en) * 1996-09-30 1998-04-21 Toshiba Corp Electronic component transfer device and electronic component mounting machine using this transfer device
US5744758A (en) * 1995-08-11 1998-04-28 Shinko Electric Industries Co., Ltd. Multilayer circuit board and process of production thereof
US20010004130A1 (en) * 1999-12-16 2001-06-21 Mitsutoshi Higashi Semiconductor device and production method thereof
EP1111674A2 (en) * 1999-12-20 2001-06-27 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module, radio device having the same, and method for producing the same
US20010010627A1 (en) * 2000-01-31 2001-08-02 Masatoshi Akagawa Semiconductor device and manufacturing method therefor
US20020117743A1 (en) * 2000-12-27 2002-08-29 Matsushita Electric Industrial Co., Ltd. Component built-in module and method for producing the same
JP2002280485A (en) * 2001-03-19 2002-09-27 Casio Comput Co Ltd Semiconductor device and method of manufacturing the same
US20020175402A1 (en) * 2001-05-23 2002-11-28 Mccormack Mark Thomas Structure and method of embedding components in multi-layer substrates
US20020187588A1 (en) * 2001-05-18 2002-12-12 Shoko Omizo Stacked semiconductor device manufacturing method
US20020195700A1 (en) * 2002-02-01 2002-12-26 Intel Corporation Electronic assembly with vertically connected capacitors and manufacturing method
US20030062624A1 (en) * 2001-01-19 2003-04-03 Matsushita Electric Industrial Co., Ltd. Component built-in module and method of manufacturing the same
JP2003158239A (en) * 2001-11-22 2003-05-30 Sony Corp Multi-chip circuit module and method of manufacturing the same

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2842378B2 (en) * 1996-05-31 1999-01-06 日本電気株式会社 High-density mounting structure for electronic circuit boards
US6525414B2 (en) 1997-09-16 2003-02-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device including a wiring board and semiconductor elements mounted thereon
JPH11265975A (en) 1998-03-17 1999-09-28 Mitsubishi Electric Corp Multilayer integrated circuit device
KR100290784B1 (en) * 1998-09-15 2001-07-12 박종섭 Stack Package and Manufacturing Method
DE60023202T2 (en) 1999-02-15 2006-07-20 Mitsubishi Gas Chemical Co., Inc. Circuit board for plastic semiconductor housing
JP3792445B2 (en) 1999-03-30 2006-07-05 日本特殊陶業株式会社 Wiring board with capacitor
JP2001044362A (en) 1999-07-27 2001-02-16 Mitsubishi Electric Corp Semiconductor device mounting structure and mounting method
JP3619395B2 (en) 1999-07-30 2005-02-09 京セラ株式会社 Semiconductor device built-in wiring board and manufacturing method thereof
JP2001094046A (en) 1999-09-22 2001-04-06 Seiko Epson Corp Semiconductor device
JP3409759B2 (en) 1999-12-09 2003-05-26 カシオ計算機株式会社 Manufacturing method of semiconductor device
JP3809053B2 (en) * 2000-01-20 2006-08-16 新光電気工業株式会社 Electronic component package
JP4854845B2 (en) 2000-02-25 2012-01-18 イビデン株式会社 Multilayer printed circuit board
JP3651346B2 (en) 2000-03-06 2005-05-25 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof
KR100344833B1 (en) 2000-04-03 2002-07-20 주식회사 하이닉스반도체 Package of semiconductor and method for fabricating the same
JP3951091B2 (en) 2000-08-04 2007-08-01 セイコーエプソン株式会社 Manufacturing method of semiconductor device
JP4183375B2 (en) 2000-10-04 2008-11-19 沖電気工業株式会社 Semiconductor device and manufacturing method thereof
JP2002134658A (en) 2000-10-24 2002-05-10 Shinko Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2002270712A (en) 2001-03-14 2002-09-20 Sony Corp Multilayer wiring board with built-in semiconductor element, device with built-in semiconductor element, and method of manufacturing them
JP2002368184A (en) 2001-06-08 2002-12-20 Nec Kyushu Ltd Multi-chip semiconductor device
JP2003197849A (en) 2001-10-18 2003-07-11 Matsushita Electric Ind Co Ltd Component built-in module and manufacturing method thereof
JP3870778B2 (en) 2001-12-20 2007-01-24 ソニー株式会社 Manufacturing method of element-embedded substrate and element-embedded substrate
US6680529B2 (en) 2002-02-15 2004-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor build-up package
JP2003273321A (en) 2002-03-13 2003-09-26 Toshiba Corp Semiconductor module
JP2003318361A (en) 2002-04-19 2003-11-07 Fujitsu Ltd Semiconductor device and method of manufacturing the same
US6770971B2 (en) * 2002-06-14 2004-08-03 Casio Computer Co., Ltd. Semiconductor device and method of fabricating the same
WO2004015771A2 (en) * 2002-08-09 2004-02-19 Casio Computer Co., Ltd. Semiconductor device and method of manufacturing the same
JP3918681B2 (en) 2002-08-09 2007-05-23 カシオ計算機株式会社 Semiconductor device
US7035113B2 (en) 2003-01-30 2006-04-25 Endicott Interconnect Technologies, Inc. Multi-chip electronic package having laminate carrier and method of making same
TWI278048B (en) 2003-11-10 2007-04-01 Casio Computer Co Ltd Semiconductor device and its manufacturing method
JP4432470B2 (en) 2003-11-25 2010-03-17 株式会社デンソー Semiconductor device
JP3795040B2 (en) 2003-12-03 2006-07-12 沖電気工業株式会社 Manufacturing method of semiconductor device
US7489032B2 (en) 2003-12-25 2009-02-10 Casio Computer Co., Ltd. Semiconductor device including a hard sheet to reduce warping of a base plate and method of fabricating the same
JP3945483B2 (en) 2004-01-27 2007-07-18 カシオ計算機株式会社 Manufacturing method of semiconductor device
JP3925809B2 (en) 2004-03-31 2007-06-06 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5337027A (en) * 1992-12-18 1994-08-09 General Electric Company Microwave HDI phase shifter
US5744758A (en) * 1995-08-11 1998-04-28 Shinko Electric Industries Co., Ltd. Multilayer circuit board and process of production thereof
JPH10100026A (en) * 1996-09-30 1998-04-21 Toshiba Corp Electronic component transfer device and electronic component mounting machine using this transfer device
US20010004130A1 (en) * 1999-12-16 2001-06-21 Mitsutoshi Higashi Semiconductor device and production method thereof
EP1111674A2 (en) * 1999-12-20 2001-06-27 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module, radio device having the same, and method for producing the same
US20010010627A1 (en) * 2000-01-31 2001-08-02 Masatoshi Akagawa Semiconductor device and manufacturing method therefor
US20020117743A1 (en) * 2000-12-27 2002-08-29 Matsushita Electric Industrial Co., Ltd. Component built-in module and method for producing the same
US20030062624A1 (en) * 2001-01-19 2003-04-03 Matsushita Electric Industrial Co., Ltd. Component built-in module and method of manufacturing the same
JP2002280485A (en) * 2001-03-19 2002-09-27 Casio Comput Co Ltd Semiconductor device and method of manufacturing the same
US20020187588A1 (en) * 2001-05-18 2002-12-12 Shoko Omizo Stacked semiconductor device manufacturing method
US20020175402A1 (en) * 2001-05-23 2002-11-28 Mccormack Mark Thomas Structure and method of embedding components in multi-layer substrates
JP2003158239A (en) * 2001-11-22 2003-05-30 Sony Corp Multi-chip circuit module and method of manufacturing the same
US20040056344A1 (en) * 2001-11-22 2004-03-25 Tsuyoshi Ogawa Multi-chip circuit module and method for producing the same
US20020195700A1 (en) * 2002-02-01 2002-12-26 Intel Corporation Electronic assembly with vertically connected capacitors and manufacturing method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 09 31 July 1998 (1998-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 01 14 January 2003 (2003-01-14) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 09 3 September 2003 (2003-09-03) *

Also Published As

Publication number Publication date
KR100778597B1 (en) 2007-11-22
US7615411B2 (en) 2009-11-10
CN100468719C (en) 2009-03-11
CN1723556A (en) 2006-01-18
TW200509270A (en) 2005-03-01
US7709942B2 (en) 2010-05-04
KR20050087872A (en) 2005-08-31
EP1636842B1 (en) 2011-08-17
WO2004109771A2 (en) 2004-12-16
EP1636842A2 (en) 2006-03-22
US20080166836A1 (en) 2008-07-10
HK1086386A1 (en) 2006-09-15
TWI247373B (en) 2006-01-11
US20040245614A1 (en) 2004-12-09

Similar Documents

Publication Publication Date Title
WO2004109771A3 (en) Stackable semiconductor device and method of manufacturing the same
WO2005064641A3 (en) Semiconductor device and method of fabricating the same
KR101076598B1 (en) Stacked semiconductor package assembly having hollowed substrate
WO2003069695A3 (en) Multilayer package for a semiconductor device
TW200605242A (en) Wafer-level chip scale packaging method
EP1653510A3 (en) Semiconductor device and manufacturing method of the same
TW200603367A (en) Semiconductor device and the fabricating method of the same
EP1455392A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI266394B (en) Semiconductor device and method of fabricating the same
TWI256719B (en) Semiconductor device package module and manufacturing method thereof
TW200610116A (en) Micro-electronic package structure and method for fabricating the same
EP1160856A3 (en) Flip chip type semiconductor device and method of manufacturing the same
WO2009028578A3 (en) Semiconductor device including semiconductor constituent and manufacturing method thereof
WO2004057674A3 (en) Electrical connection of optoelectronic devices
JP2000208698A5 (en)
WO2012074783A3 (en) Low-profile microelectronic package, method of manufacturing same, and electronic assembly containing same
TW200509331A (en) Semiconductor chip package and method for making the same
WO2007120282A3 (en) Stackable molded packages and methods of making the same
EP1737039A3 (en) Semiconductor Package
EP1739747A3 (en) Semiconductor chip and method of manufacturing the same
WO2005112114A3 (en) Universal interconnect die
TW200717887A (en) Thermoelectric device and method for fabricating the same and chip and electronic device
TW200620511A (en) Semiconductor device and method of assembling semiconductor device
WO2009020240A3 (en) Semiconductor device and method for manufacturing the same
TW200612526A (en) Chip package structure, package substrate and manufacturing method thereof

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004735511

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20048017045

Country of ref document: CN

Ref document number: 1020057012181

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020057012181

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004735511

Country of ref document: EP