WO2005007936A2

WO2005007936A2 - Ultrahard diamonds and method of making thereof

Info

Publication number: WO2005007936A2
Application number: PCT/US2004/022611
Authority: WO
Inventors: Russell J. Hemley; Ho-Kwang Mao; Chih-Shiue Yan
Original assignee: Carnegie Institution of Washington
Current assignee: Carnegie Institution of Washington
Priority date: 2003-07-14
Filing date: 2004-07-14
Publication date: 2005-01-27
Anticipated expiration: 2006-01-14
Also published as: CA2532362C; KR101111690B1; RU2325323C2; US20080241049A1; AU2004258191B2; TW200504254A; IL173100A0; US20060185583A1; CN1823008A; IL173102A0; JP4846578B2; AU2004258192B2; CA2532227A1; US7115241B2; US7754180B2; HK1101705A1; CN1942610B; CA2532362A1; KR101151768B1; TWI342902B

Abstract

A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C to have a hardness in excess of 120 GPa.

Description

UNITED STATES PATENT APPLICATION OF

Russell J. HEMLEY Ho-Kwang MAO AND Chih-shiue YAN

FOR

ULTRAHARD DIAMONDS AND METHOD OF MAKING THEREOF

[0001] The present invention claims the benefit of Provisional Application No.

60/486,435 filed on July 14, 2003, which is hereby incorporated by reference.

Statement of Government Interest

[0002] This invention was made with U.S. government support under grant number

EAR-0135626 from the National Science Foundation. The U.S. government has certain

rights in the invention.

BACKGROUND OF THE INVENTION Field of the Invention

[0003] The present invention relates to diamonds, and more particularly, to an ultrahard diamond produced using a Microwave Plasma Chemical Vapor Deposition

(MPCVD) within a deposition chamber. Description of Related Art

[0004] Large-scale production of synthetic diamond has long been an objective of both research and industry. Diamond, in addition to its gem properties, is the hardest known material, has the highest known thermal conductivity, and is transparent to a wide variety

of electromagnetic radiation. Thus, diamond is valuable because of its wide range of

applications in a number of industries, in addition to its value as a gemstone. [0005] For at least the last twenty years, a process of producing small quantities of diamond by chemical vapor deposition (CVD) has been available. As reported by B. V. Spitsyn et al. in "Vapor Growth of Diamond on Diamond and Other Surfaces," Journal of Crystal Growth, vol. 52, pp. 219-226, the process involves CVD of diamond on a substrate by using a combination of methane, or another simple hydrocarbon gas, and hydrogen gas at reduced pressures and temperatures of 800-1200° C. The inclusion of

hydrogen gas prevents the formation of graphite as the diamond nucleates and grows.

Growth rates of up to 1 μm/hour have been reported with this technique.

[0006] Subsequent work, for example, that of Kamo et al. as reported in "Diamond

Synthesis from Gas Phase in Microwave Plasma," Journal of Crystal Growth, vol. 62, pp.

642-644, demonstrated the use of Microwave Plasma Chemical Vapor Deposition (MPCVD) to produce diamond at pressures of 1-8 Kpa in temperatures of 800-1000° C

with microwave power of 300-700 W at a frequency of 2.45 GHz. A concentration of 1-3 % methane gas was used in the process of Kamo et al. Maximum growth rates of 3 μm/hour have been reported using this MPCVD process.

[0007] Natural diamonds have a hardness between 80-120 GPa. Most grown or

manufactured diamonds, regardless of the process, have a hardness of less than 110 GPa.

Other than type lla natural diamonds, which have been annealed, diamonds have not been

reported to have a hardness of greater than 120 GPa. SUMMARY OF THE INVENTION [0008] Accordingly, the present invention is directed to a an apparatus and a method

for producing diamond that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.

[0009] An object of the present invention relates to an apparatus and method for producing diamond in a microwave plasma chemical vapor deposition system having increased hardness.

[0010] Another object of the present invention is to enhance the optical characteristics of a single crystal diamond. [0011] Additional features and advantages of the invention will be set forth in the

description which follows, and in part will be apparent from the description, or may be

learned by practice of the invention. The objectives and other advantages of the

invention will be realized and attained by the structure particularly pointed out in the

written description and claims hereof as well as the appended drawings.

[0012] To achieve these and other advantages and in accordance with the purpose of

the present invention, as embodied and broadly described, a single crystal diamond

grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C that has a hardness of greater than 120 GPa.

[0013] In another embodiment, A single crystal diamond having a hardness of 160- 180

GPa.

[0014] In accordance with another embodiment of the present invention, A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature

in excess of 1500 degrees C to have a hardness in excess of 120 GPa.

[0015] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide

further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS [0016] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description

serve to explain the principles of the invention.

[0017] FIG. 1 is a diagram of an indenter for testing the hardness of a diamond.

[0018] FIG. 2 is a picture of an indentation made on a diamond.

[0019] FIG. 3 is a graph showing the hardness and toughness of annealed microwave plasma CVD-grown single-crystal diamonds in comparison to type lla natural diamonds

annealed type lla natural diamonds, annealed type la natural diamonds and annealed type lb HPHT synthetic diamonds.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Reference will now be made in detail to the preferred embodiments of the

present invention, the results of which are illustrated in the accompanying drawings.

[0021] The microwave plasma CVD-grown single-crystal diamond referred to in this

application were grown with the apparatus described in U.S. patent application number 10/288,499 filed on November 6, 2002 entitled "Apparatus and Method for Diamond Production," which is hereby incorporated by reference. In general, a seed diamond is

placed in holder that moves the seed diamond/grown diamond as the diamond is grown.

The inventors of this application are also inventors in U.S. patent application number 10/288,499.

[0022] A microwave plasma CVD-grown single-crystal diamond having a thickness of

greater than 1 millimeter was deposited on type lb {100} synthetic diamond. In order to

enhance the growth rate (50-150 μm/h) and promote smooth {100} face growth, single- crystal diamonds were grown in an atmosphere of N₂/CH₄ = 0.2-5.0%, CH /H = 12- 20%, 120-220 torr total pressure, and 900-1500 °C from a microwave induced plasma within a CVD chamber. Raman spectra show a small amount of hydrogenated

amorphous carbon (a-C:H)⁴ and nitrogen-containing a-C:H (N:a-C:H)⁴ giving rise to

brown diamond at <950 °C and > 1400 °C. Photoluminescence (PL) spectra indicate

nitrogen- acancy (N-V) impurities. Single crystal diamonds up to 4.5 mm in thickness

have been fabricated at growth rates that are as much as two orders of magnitude higher

than conventional polycrystalline CVD growth methods.

[0023] The microwave plasma CND-grown single-crystal diamonds were annealed at

pressures in excess of 4.0 GPa, such as 5-7 GPa, and heated to temperature in excess of 1500 degrees C, such as 1800-2900 degrees C, for 1-60 min in a reaction vessel using a belt-type or anvil-type apparatus. The reaction vessel can be a cell, such as that

described in U.S. Pat. Νos. 3,745,623 or 3,913,280, which are hereby incorporated by

reference. Such an annealing treatment, reduces or eliminates the color in the microwave plasma CND-grown single-crystal diamond crystals, and lightening the tint of the type lb

HPHT synthetic seed crystals. Further, the hardness of the annealed microwave plasma CVD-grown. single-crystal diamond annealed CVD diamond (at least -140 GPa) is beyond that of annealed or unannealed type lb HPHT synthetic diamond (-90 GPa), annealed type la natural diamond (-100 GPa), type lla natural diamond (-110 GPa), and annealed type lla natural diamond (-140 GPa) and sintered polycrystalline diamond (120-140 GPa).

[0024] EXAMPLE #1

A single crystal CND diamond was grown with a Ν₂/CH₄ ratio of 5% at a temperature of approximately 1500 degrees C on a yellow type lb HPHT synthetic diamond in a microwave CND chamber. The dimension of the microwave plasma CND-

grown single-crystal diamond was one centimeter square and a little larger than one

millimeter in thickness. The color of the microwave plasma CND-grown single-crystal

diamond was brown. The brown microwave plasma CND-grown single-crystal diamond

on the type lb HPHT synthetic seed diamond was then placed as a sample in the reaction vessel.

[0025] The reaction vessel was placed in a conventional HPHT apparatus. First, the pressure was increased to a pressure of 5.0 GPa, and then the temperature was brought up to 2200 degrees C. The sample was maintained at these annealing conditions for five

minutes, and then the temperature was decreased over a period of about one minute to room temperature before the pressure was released.

[0026] The sample was removed from the reaction vessel and examined under an

optical microscope. The brown microwave plasma CND-grown single-crystal diamond

had turned to a light green translucent color and remained firmly bonded to the yellow type lb HPHT synthetic diamond. The yellow color of the type lb HPHT synthetic

diamond became a lighter yellow or a more translucent yellow. The hardness was about 160 GPa.

[0027] EXAMPLE #2

Same as example #1 above, except the annealing conditions were maintained for 1 hour. The brown microwave plasma CND-grown single-crystal diamond turned to a light green color, which was more translucent than the light green color resulting in example #1, and remained firmly bonded to the type lb HPHT synthetic diamond. The yellow color of the type lb HPHT synthetic diamond became a lighter yellow or a more translucent yellow. The

hardness was about 180 GPa.

[0028] EXAMPLE #3

A single crystal CND diamond was grown with a Ν₂/CH₄ ratio of 5% at a temperature

of approximately 1450 degrees C on a yellow type lb HPHT synthetic diamond in a

microwave CND chamber. The dimension of the microwave plasma CVD-grown single- crystal diamond was one centimeter square and a little larger than one millimeter in thick. The color of the microwave plasma CVD-grown single-crystal diamond was a light brown or

yellow. In other words, a yellow or light brown that was not as dark as the brown of the microwave plasma CVD-grown single-crystal diamond in example #1 above. The yellow or

light brown microwave plasma CVD-grown single-crystal diamond on the type lb HPHT synthetic diamond was then placed as a sample in a reaction vessel. The hardness was greater

than 160 GPa.

[0029] The reaction vessel was placed in a conventional HPHT apparatus. The pressure was increased to about to a pressure of 5.0 GPa, and then the temperature was rapidly brought up to about 2000 degrees C. The sample was maintained at these annealing conditions for five minutes, and then the temperature was decreased over a period of about one minute to room temperature before the pressure was released. [0030] The sample was removed from the reaction vessel and examined under an optical microscope. The light brown microwave plasma CVD-grown single-crystal diamond had become colorless and remained firmly bonded to the yellow type lb HPHT synthetic diamond. The yellow color of the type lb HPHT synthetic diamond also became a lighter yellow or a more translucent yellow.

[0031] EXAMPLE #4 Same as example #1 except a colorless microwave plasma single-crystal CND-grown diamond in an atmosphere of Ν₂/CH = 5% at a temperature of -1200 degree C was annealed. After annealing, the microwave plasma single-crystal CND-grown diamond was blue. This blue microwave plasma single-crystal CND-grown diamond had a very high toughness of >20 MPa m^1/2. The hardness was about ~140^lGPa.

[0032] EXAMPLE #5 Same as example #1 except a colorless microwave plasma single-crystal CND-grown diamond in an atmosphere of Ν₂/CH₄ = .5% at a temperature of -1200 degree C was annealed. The microwave plasma single-crystal CND-grown diamond was still colorless. This colorless microwave plasma single-crystal CND-grown diamond had a hardness of -160 GPa and toughness of ~ 10 MPa m^1/2.

[0033] FIG. 1 is a diagram of an indenter for testing the hardness of a diamond. A Nickers hardness test were performed on the annealed microwave plasma CVD-grown single-crystal diamonds with the indenter 1 shown in FIG 1. The indenter 1 in FIG. 1 has an impinging material 2 positioned on a mount 3. The impinging material 2 can be silicon carbide, diamond or some other hard material. The impinging material has a face with a pyramidal Vickers indenter shape in which the sides of the pyramidal Nickers indenter shape have an angle of 136°. [0034] The indenter applies a point load to the test diamond 2 until an indentation or

crack is formed in the test diamond 2. To prevent elastic deformation of the indenter, the

loads were varied from 1 to 3 kg on {100} faces in the <100> direction of the test

diamonds. Dimensions of the indentation and the cracks associate with the indentation

are measured via optical microscopy. FIG. 2 is a picture of an indentation made on a

microwave plasma CND-grown single-crystal diamond.

[0035] By measuring the length D and height h of the indentation, the hardness H_v of

the test diamond can be determined from the following equation (1): (l): H_v = 1.854^χP/D² P is the maximum load used on the indenter to form an indentation into the test diamond. D is the length of the longest crack formed by the indenter in the test diamond and h is

the depth of the indentation into the test diamond, as shown in FIG. 1.

[0036] The fracture toughness K_c of the test diamond can be determined by using the

hardness H_v from equation (1) in the following equation (2): (2): K_c = (0.016±0.004)(E/H_v)l/2(p/c3/2)

E is the Young's modulus, which is assumed to be 1000 GPa. P is the maximum load

used on the indenter to form the indentation into the test diamond. The term d is the average length of the indentation cavity in the test diamond, as shown in FIG. 2 such that d = (di +d2) 2. The term c is the average length of the radial cracks in the test diamond, as shown in FIG. 2 such the c = (cι +C2)/2.

[0037] Because of the uncertainties in determining hardness, identical measurements were also performed on other diamonds. The measurements on other diamonds were found to be in agreement with published data on the other diamonds. The Nickers

hardness tests were done on the (100) faces of the various types of diamonds in the (100)

direction.

[0038] The indented surfaces of the annealed microwave plasma CND-grown single-

crystal diamonds as viewed by optical microscopy clearly differ from those of other

(softer) diamonds. The annealed microwave plasma CND-grown single-crystal diamond

exhibits square crack patterns along <110> or <111>, no cross-like cracked lines along <100>, and a water-print-like deformation mark was produced on the surface of the annealed microwave plasma CVD-grown single-crystal diamond by the pyramidal Nickers indenter. In contrast, an annealed type lla natural diamond has less square crack

patterns along (110) and (111) but still exhibits the cross-like (100) cracks of softer

diamonds. Such results indicate that annealed microwave plasma CND-grown single-

crystal diamond is harder than the indenter, and the pressure due to plastic deformation of the indenter causes slippage of the softer {111 } faces.

[0039] The Nickers indenters typically cracked after -15 measurements on unannealed microwave plasma CND-grown single-crystal diamonds and type lb natural diamonds. Further, The Nickers indenters typically cracked after -5 measurements on annealed type lla natural diamonds, annealed type la natural diamonds and annealed type lb HPHT synthetic diamonds. However, the Nickers indenter cracked after only one or two measurements on the annealed microwave plasma CND-grown single-crystal diamonds. These observations further indicate that the annealed microwave plasma CND-grown single-crystal diamonds are harder than the measured values indicate. Indeed, many annealed microwave plasma CND-grown single-crystal diamonds simply damaged the softer indenter. In such instances, the indenter left no imprint whatsoever in the surface of the annealed microwave plasma CND-grown single-crystal diamonds.

[0040] FIG. 3 is a graph showing the hardness and toughness of annealed microwave

plasma CVD-grown single-crystal diamonds in comparison to type Ila natural diamonds

annealed type Ila natural diamonds, annealed type la natural diamonds and annealed type

lb HPHT synthetic diamonds. As shown in FIG. 3, the annealed microwave plasma

CVD-grown single-crystal diamonds have much higher hardness than type Ila natural

diamond, as shown by the dotted square 10 in FIG. 3. All of the annealed microwave plasma CND-grown single-crystal diamonds also have a higher hardness than the reported range the reported range of hardness for polycrystalline CVD diamonds, shown by the dotted square 20 in FIG. 3. The microwave plasma CVD-grown single-crystal

diamonds represented in FIG. 3 have a fracture toughness of 6-10 MPa m^{1 2} with a hardness of 140-180 GPa with indications that they may be harder. [0041] As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiments are not limited by any of the details of the foregoing description, unless otherwise specified, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the metes and bounds of the claims, or equivalence of such metes and bounds are therefore intended to be embraced by the appended claims.

Claims

What is claimed is:

1. A single crystal diamond grown by microwave plasma chemical vapor deposition

annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500

degrees C that has a hardness of greater than 120 GPa.

2. The single crystal diamond of claim 1, wherein the fracture toughness is 6-10 MPa m^{1 2} _.

3. The single crystal diamond of claim 1, wherein the hardness is 160-180 GPa.

4. The single crystal diamond of claim 1, wherein hardness is determined by the equation of H_v = 1.854xP/D² in which P is the maximum load used on the indenter to form an

indentation into the single crystal diamond and D is the length of the longest crack formed by the indenter in the single crystal diamond and h is the depth of the indentation into the single crystal diamond.

5. The single crystal diamond of claim 3 having a fracture toughness of 6-10 MPa m^1/2

6. A single crystal diamond having a hardness of 160-180 GPa.

7. The single crystal diamond of claim 6 having a fracture toughness of 6-10 MPa

m 1/2

8. The single crystal diamond of claim 6, wherein hardness is determined by the

equation of H_v = 1.854xP/D² in which P is the maximum load used on the indenter to form an indentation into the single crystal diamond and D is the length of the longest crack formed by

the indenter in the single crystal diamond and h is the depth of the indentation into the single

crystal diamond.

9. A method for manufacture a hard single crystal diamond comprising: growing a single crystal diamond; and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a

temperature in excess of 1500 degrees C to have a hardness in excess of 120 GPa.

10. The method of claim 9, whereing growing single crystal diamond includes

microwave plasma chemical vapor deposition.

11. The method of claim 9, wherein growing single crystal diamond occurs in an atmosphere of N₂/CH₄ = 0.2-5.0% and CH₄/H₂ = 12-20% at a total pressure of 120-220 torr.

12. The method of claim 9, wherein annealing the single crystal diamond results in a single crystal diamond having a hardness in excess of 160-180 GPa.

13. The method of claim 9, wherein growing single crystal diamond occurs in an

atmosphere having a temperature of 900-1500 degrees C.

14. The method of claim 9, wherein the annealing occurs for 1-60 minutes.

15. The method of claim 9, wherein annealing the single crystal diamond results in a

single crystal diamond having a hardness in excess of 140-180 GPa.