WO2005015314A3 - An illumination system for microlithography - Google Patents

An illumination system for microlithography Download PDF

Info

Publication number
WO2005015314A3
WO2005015314A3 PCT/EP2004/003854 EP2004003854W WO2005015314A3 WO 2005015314 A3 WO2005015314 A3 WO 2005015314A3 EP 2004003854 W EP2004003854 W EP 2004003854W WO 2005015314 A3 WO2005015314 A3 WO 2005015314A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
filter
microlithography
illumination system
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2004/003854
Other languages
French (fr)
Other versions
WO2005015314A2 (en
Inventor
Wolfgang Singer
Joachim Wietzorrek
Joachim Hainz
Gabriele Weirauch
Manfred Maul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to US10/563,175 priority Critical patent/US7911584B2/en
Priority to JP2006521398A priority patent/JP5026788B2/en
Priority to EP04726980A priority patent/EP1649324B1/en
Priority to DE602004031844T priority patent/DE602004031844D1/en
Priority to KR1020057025338A priority patent/KR101144458B1/en
Priority to AT04726980T priority patent/ATE502323T1/en
Publication of WO2005015314A2 publication Critical patent/WO2005015314A2/en
Publication of WO2005015314A3 publication Critical patent/WO2005015314A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lighting Device Outwards From Vehicle And Optical Signal (AREA)

Abstract

The present invention relates to an illumination system for microlithography, especially for wavelengths ≤ 193 nm, especially preferably for EUV lithography for illuminating a field in a field plane (9) with at least one optical integrator (3) which splits up a light bundle emitted by a light source into a plurality of light channels each having a light intensity, characterized in that a filter (23) is provided in the light path from the light source to the field plane (9), with the filter comprising filter elements which are configured in such a way that the light intensity of at least one light channel is reduced in the light path after the filter element.
PCT/EP2004/003854 2003-07-30 2004-04-13 An illumination system for microlithography Ceased WO2005015314A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US10/563,175 US7911584B2 (en) 2003-07-30 2004-04-13 Illumination system for microlithography
JP2006521398A JP5026788B2 (en) 2003-07-30 2004-04-13 Microlithography illumination system
EP04726980A EP1649324B1 (en) 2003-07-30 2004-04-13 An illumination system for microlithography
DE602004031844T DE602004031844D1 (en) 2003-07-30 2004-04-13 LIGHTING SYSTEM FOR MICROLITHOGRAPHY
KR1020057025338A KR101144458B1 (en) 2003-07-30 2004-04-13 An illumination system for microlithography
AT04726980T ATE502323T1 (en) 2003-07-30 2004-04-13 ILLUMINATION SYSTEM FOR MICROLITHOGRAPHY

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10334722.4 2003-07-30
DE10334722 2003-07-30

Publications (2)

Publication Number Publication Date
WO2005015314A2 WO2005015314A2 (en) 2005-02-17
WO2005015314A3 true WO2005015314A3 (en) 2005-11-24

Family

ID=34129472

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/003854 Ceased WO2005015314A2 (en) 2003-07-30 2004-04-13 An illumination system for microlithography

Country Status (7)

Country Link
US (1) US7911584B2 (en)
EP (1) EP1649324B1 (en)
JP (1) JP5026788B2 (en)
KR (1) KR101144458B1 (en)
AT (1) ATE502323T1 (en)
DE (1) DE602004031844D1 (en)
WO (1) WO2005015314A2 (en)

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US7572556B2 (en) 2003-09-17 2009-08-11 Carl Zeiss Smt Ag Masks, lithography device and semiconductor component
DE102005042005A1 (en) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Objective lens esp. as micro-lithography projection objective, has objective divided into first part-objective with single mirror and second part-objective with primary and secondary mirror
WO2006136353A1 (en) * 2005-06-21 2006-12-28 Carl Zeiss Smt Ag A double-facetted illumination system with attenuator elements on the pupil facet mirror
JP2007150295A (en) 2005-11-10 2007-06-14 Carl Zeiss Smt Ag Optical device comprising raster element, and irradiation system comprising the optical device
JP5068271B2 (en) 2006-02-17 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー Microlithography illumination system and projection exposure apparatus comprising such an illumination system
DE102006020734A1 (en) * 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Illumination system for the EUV lithography and first and second optical element for use in such a lighting system
DE102006059024A1 (en) 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projection exposure equipment for microlithography, has illuminating optical unit for illuminating object field in object plane and correction screen is arranged in or adjacent to aperture diaphragm plane of projection optical unit
DE102007023411A1 (en) 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Field illumination system for microlithographic projection exposure system, has illumination angle variation device influencing intensity and/or phase of light so that intensity contribution of raster units to total intensity is varied
KR20090115712A (en) * 2007-02-20 2009-11-05 칼 짜이스 에스엠테 아게 Optical element with multiple primary light sources
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DE102007041004A1 (en) 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Illumination lens for use in scanner-type projection illumination system e.g. stepper, for extreme ultraviolet microlithography, has correction element arranged in optical path of ultraviolet radiation between radiation source and location
US8908151B2 (en) * 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
DE102008001511A1 (en) * 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Illumination optics for EUV microlithography and illumination system and projection exposure apparatus with such illumination optics
DE102008002749A1 (en) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Illumination optics for microlithography
NL2003449A (en) * 2008-10-28 2010-04-29 Asml Netherlands Bv Fly's eye integrator, illuminator, lithographic apparatus and method.
DE102009014701A1 (en) 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Optical assembly
WO2010108516A1 (en) * 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind
JP5070242B2 (en) * 2009-05-27 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー Lithographic apparatus
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WO2011141046A1 (en) * 2010-04-23 2011-11-17 Carl Zeiss Smt Gmbh Process of operating a lithographic system comprising a manipulation of an optical element of the lithographic system
JP5926264B2 (en) 2010-09-27 2016-05-25 カール・ツァイス・エスエムティー・ゲーエムベーハー Mirror, projection objective including the mirror, and microlithography projection exposure apparatus including the projection objective
DE102011085132A1 (en) 2010-11-24 2012-05-24 Carl Zeiss Smt Gmbh Optical assembly for projection lithography
DE102010062720B4 (en) 2010-12-09 2012-07-12 Carl Zeiss Smt Gmbh EUV lithography system
NL2008009A (en) 2011-02-02 2012-08-06 Asml Netherlands Bv Illumination system, lithographic apparatus and method.
DE102011004326A1 (en) 2011-02-17 2012-08-23 Carl Zeiss Smt Gmbh Optical assembly for projection exposure system used in manufacture of micro structured component, has controllably driven components to control reflected partial beams so that beam intensity distribution variations of light is varied
JP2013072845A (en) * 2011-09-29 2013-04-22 Nuflare Technology Inc Pattern inspection device and pattern inspection method
CN104220931B (en) * 2012-03-29 2016-10-12 卡尔蔡司Smt有限责任公司 Apparatus and method for compensating channel defects of a microlithography projection exposure system
DE102012210174A1 (en) * 2012-06-18 2013-06-06 Carl Zeiss Smt Gmbh Optical component for use in illumination optics of illumination system of projection exposure system for guiding light radiation to object field, has individual mirrors with front side that forms individual mirror reflecting surface
DE102012218221A1 (en) 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitor system for determining orientations of mirror elements and EUV lithography system
DE102014203187A1 (en) 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Illumination optics for projection lithography
DE102014217612A1 (en) 2014-09-03 2016-03-03 Carl Zeiss Smt Gmbh Illumination optics for the projection lithograph
US11175487B2 (en) * 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems
JP2019028392A (en) * 2017-08-03 2019-02-21 セイコーエプソン株式会社 Light source device, lighting device, and projector
DE102021120952B3 (en) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Method for correcting a telecentricity error of an imaging device and mask inspection microscope

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Also Published As

Publication number Publication date
JP2007500432A (en) 2007-01-11
KR101144458B1 (en) 2012-05-14
KR20060039876A (en) 2006-05-09
US20070058274A1 (en) 2007-03-15
EP1649324A2 (en) 2006-04-26
ATE502323T1 (en) 2011-04-15
DE602004031844D1 (en) 2011-04-28
US7911584B2 (en) 2011-03-22
EP1649324B1 (en) 2011-03-16
JP5026788B2 (en) 2012-09-19
WO2005015314A2 (en) 2005-02-17

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