WO2005064643A1 - NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS - Google Patents

NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS Download PDF

Info

Publication number
WO2005064643A1
WO2005064643A1 PCT/US2003/039355 US0339355W WO2005064643A1 WO 2005064643 A1 WO2005064643 A1 WO 2005064643A1 US 0339355 W US0339355 W US 0339355W WO 2005064643 A1 WO2005064643 A1 WO 2005064643A1
Authority
WO
WIPO (PCT)
Prior art keywords
gan
plane
layers
polar
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/039355
Other languages
French (fr)
Inventor
Michael D. Craven
Steven P. Denbaars
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
University of California Berkeley
University of California San Diego UCSD
Original Assignee
Japan Science and Technology Agency
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/413,691 external-priority patent/US20030198837A1/en
Priority claimed from PCT/US2003/021918 external-priority patent/WO2004061909A1/en
Priority to CN2003801109995A priority Critical patent/CN1894771B/en
Priority to AU2003293497A priority patent/AU2003293497A1/en
Priority to JP2005512863A priority patent/JP5096677B2/en
Priority to US10/582,390 priority patent/US20070128844A1/en
Application filed by Japan Science and Technology Agency, University of California Berkeley, University of California San Diego UCSD filed Critical Japan Science and Technology Agency
Priority to KR1020067013966A priority patent/KR101074852B1/en
Priority to EP03790447A priority patent/EP1697965A4/en
Priority to US11/140,893 priority patent/US7208393B2/en
Publication of WO2005064643A1 publication Critical patent/WO2005064643A1/en
Anticipated expiration legal-status Critical
Priority to US14/921,734 priority patent/US9893236B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3258—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Definitions

  • the invention is related to semiconductor materials, methods, and devices, and more particularly, to non-polar (Al,B,In,Ga)N quantum wells.
  • m-plane GaN/AlGaN multiple quantum well (MQW) structures were first demonstrated by plasma-assisted molecular beam epitaxy (MBE) using lithium aluminate substrates [3]. Since this first demonstration, free-standing m-plane GaN substrates grown by hydride vapor phase epitaxy (HVPE) were employed for subsequent epitaxial GaN/AlGaN MQW growths by both MBE [4] and metalorganic chemical vapor deposition (MOCVD) [5]. In addition to the m-plane, research efforts have investigated a-plane GaN/AlGaN MQW structures grown on r-plane sapphire substrates by both MBE [6] and MOCVD [7].
  • HVPE hydride vapor phase epitaxy
  • MOCVD metalorganic chemical vapor deposition
  • the present invention describes the dependence of a-plane GaN/AlGaN MQW emission on the GaN quantum well width. Moreover, an investigation of a range of GaN well widths for MOCVD-grown a-plane and c-plane MQWs provides an indication of the emission characteristics that are unique to non-polar orientations.
  • SUMMARY OF THE INVENTION The present invention describes a method of fabricating non-polar a-plane GaN / (Al,B,In,Ga)N multiple quantum wells (MQWs).
  • a-plane MQWs were grown on the appropriate GaN / sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 A to 70 A.
  • MOCVD metalorganic chemical vapor deposition
  • the room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations.
  • Optimal PL emission intensity is obtained at a quantum well width of 52 A for the a-plane MQWs.
  • FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar a- plane GaN / (Al,B,In,Ga)N quantum wells according to a preferred embodiment of the present invention.
  • FIG. 2 is a graph of high-resolution x-ray diffraction (HRXRD) scans of simultaneously regrown a-plane (69 A GaN) / (96 A Al 0 ⁇ 6 Gao 8 N) and c-plane (72 A GaN) / (98 A Al 0 ⁇ 6 Gao 84 N) MQW stacks.
  • HRXRD high-resolution x-ray diffraction
  • the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the full width at half maximum (FWHM) of the satellite peaks.
  • FIGS. 3(a) and (b) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN / (100 A Al 0 ⁇ 6 Gao 84 N) MQWs with well widths ranging from 20 A - 70 A.
  • the vertical gray line on each plot denotes a band edge of the bulk GaN layers.
  • FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs.
  • the dotted line is the result of self- consistent Poisson-Schrodinger (SCPS) calculations for a flat-band GaN / (100 A Al 0 ⁇ 6 Gao 84 N) MQW.
  • SCPS Poisson-Schrodinger
  • FIG. 5 is a graph of the normalized room temperature PL intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations. The data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane and c-plane MQWs are not possible.
  • Block 102 represents annealing the sapphire substrate in-situ at a high temperature (>1000°C), which improves the quality of the substrate surface on the atomic scale. After annealing, the substrate temperature is reduced for the subsequent low temperature nucleation layer deposition.
  • Block 104 represents depositing a thin, low temperature, low pressure, nitride- based nucleation layer as a buffer layer on the sapphire substrate. Such layers are commonly used in the heteroepitaxial growth of c-plane (0001) nitride semiconductors.
  • the nucleation layer is comprised of, but is not limited to, 1- 100 nanometers (nm) of GaN deposited at approximately 400-900°C and 1 atm.
  • the reactor temperature is raised to a high temperature
  • Block 106 represents one or more growing unintentionally doped (UID) a-plane GaN layers to a thickness of approximately 1.5 ⁇ m on the nucleation layer deposited on the substrate.
  • the high temperature growth conditions include, but are not limited to, approximately 1100°C growth temperature, 0.2 atm or less growth pressure, 30 ⁇ mol per minute Ga flow, and 40,000 ⁇ mol per minute N flow, thereby providing a V/III ratio of approximately 1300).
  • the following describes the room temperature PL characteristics of non-polar GaN / ( ⁇ 100 A Alo ⁇ 6 Gao 84 N) MQWs in comparison to c-plane structures as a function of quantum well width.
  • 10-period a-plane and c-plane MQWs structures were simultaneously regrown on the appropriate GaN / sapphire template layers via MOCVD with well widths ranging from approximately 20 A to 70 A.
  • Kinematic analysis of HRXRD measurements [9] made with a Philips MRD XPERT PROTM diffractometer using CuK ⁇ i radiation in triple axis mode confirmed the quantum well dimensions and barrier composition.
  • FIG. 2 is a graph of HRXRD scans of simultaneously regrown a-plane 69 A GaN / 96 A Al 0 16 Gao 8 N and c-plane 72 A GaN / 98 A Alo I 6 Ga 8 N MQW stacks.
  • the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the FWHM of the satellite peaks.
  • 3(a) and (b) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN / (100 A Alo ⁇ 6 Gao 84 N) MQWs with well widths ranging from -20 A to -70 A.
  • the vertical gray line on each plot denotes the bulk GaN band edge.
  • the MQW PL emission shifts to longer wavelengths (equivalently, the PL emission decreases) with increasing quantum well width as the quantum confinement is reduced.
  • the emission energies of the a-plane MQWs steadily approach but do not red-shift beyond the bulk GaN band edge as the well width increases.
  • FIGS. 4 and 5 The two primary features of the PL emission spectra, the emission energy and the emission intensity, are summarized in FIGS. 4 and 5, respectively, as functions of quantum well width.
  • the emission energy decreases with increasing well width due to quantum confinement effects.
  • FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs.
  • the a-plane MQW emission is blue-shifted with respect to the bulk GaN band edge and the blue-shift increases with decreasing well width as quantum confinement raises the quantum well's ground-state energy.
  • the a-plane MQW emission energy trend is modeled accurately using square well SCPS calculations [11] shown as the dotted line in FIG. 4.
  • the agreement between theory and experiment confirms that emission from non- polar MQWs is not influenced by polarization-induced electric fields. Despite this agreement, the theoretical model increasingly over-estimates the experimental data with decreasing quantum well width by 15 to 35 meV.
  • FIG. 4 shows the dramatic red-shift in c-plane MQW emission with increasing well width, a widely observed trend dictated by the QCSE [14-18].
  • the experimental c-plane MQW emission energy trend agrees with the model of the polar QW ground state proposed by Grandjean et al. [13]. Interpolating the experimental data, the emission from c-plane MQWs with GaN well widths greater than -43 A is below the bulk GaN band edge.
  • a maximum a-plane MQW emission intensity is associated with an optimal quantum well width of 52 A, while the maximum c-plane emission intensity is observed for 28 A- wide wells.
  • optimal emission intensity is obtained from relatively thin polar GaN quantum wells (20 A - 35 A) depending on the thickness and composition of the AlGaN barrier layers [13].

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

A method of fabricating non-polar a-plane GaN / (A1,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN / sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

Description

NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS
CROSS-REFERENCE TO RELATED APPLICATIONS This application is a continuation-in-part of the following co-pending and commonly- assigned Patent Applications: International Patent Application No. PCT US03/21918, filed July 15, 2003, by Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled "GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY," attorneys docket number 30794.93-WO-U1, which application claims priority to United States Provisional Patent Application Serial No. 60/433,843, filed December 16, 2002, by Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled "GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY," attorneys docket number 30794.93-US-P1; International Patent Application No. PCT/US03/21916, filed July 15, 2003, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled "GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY," attorneys docket number 30794.94- WO-U1, which application claims priority to United States Provisional Patent Application Serial No. 60/433,844, filed December 16, 2002, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled "TECHNIQUE FOR THE GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY," attorneys docket number 30794.94-US-P1; United States Utility Patent Application Serial No. 10/413,691, filed April 15, 2003, by Michael D. Craven and James S. Speck, entitled "NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION," attorneys docket number 30794.100-US-Ul, which application claims priority to United States Provisional Patent Application Serial No. 60/372,909, filed April 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled "NON- POLAR GALLR7M NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS," attorneys docket number 30794.95-US-P1; United States Utility Patent Application Serial Number 10/413,690, filed April
15, 2003, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled "NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES, attorneys docket number 30794.101-US-Ul, which application claims priority to United States Provisional Patent Application Serial No. 60/372,909, filed April 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled "NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS," attorneys docket number 30794.95-US-P1; United States Utility Patent Application Serial No. 10/413,913, filed April 15,
2003, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled "DISLOCATION REDUCTION IN NON-POLAR GALLIUM NITRIDE THIN FILMS," attorneys docket number 30794.102 -US-U1, which application claims priority to United States Provisional Patent Application Serial No. 60/372,909, filed April 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled "NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS," attorneys docket number 30794.95-US-P1; all of which applications are incorporated by reference herein. 1. Field of the Invention. The invention is related to semiconductor materials, methods, and devices, and more particularly, to non-polar (Al,B,In,Ga)N quantum wells.
2. Description of the Related Art. (Note: This application references a number of different publications as indicated throughout the specification by one or more reference numbers. A list of these different publications ordered according to these reference numbers can be found below in the section entitled "References." Each of these publications is incorporated by reference herein.) Currently, state-of-the-art nitride-based epitaxial device structures are grown along the polar c-axis of the thermodynamically stable wurtzite (Al,Ga,In)N unit cell. Due to the strong polarization constants of the nitrides [1], interfacial polarization discontinuities within heterostructures are associated with fixed sheet charges which produce strong internal electric fields. These "built-in" polarization-induced electric fields limit the performance of optoelectronic devices which employ quantum well active regions. Specifically, the spatial separation of the electron and hole wavefunctions caused by the internal fields, i.e., the quantum confined Stark effect (QCSE), reduces the oscillator strength of transitions and ultimately restricts the recombination efficiency of the quantum well [2]. Nitride crystal growth along non-polar directions provides an efficient means of producing nitride-based quantum structures that are unaffected by these strong polarization-induced electric fields since the polar axis lies within the growth plane of the film. (1 100 ) m-plane GaN/AlGaN multiple quantum well (MQW) structures were first demonstrated by plasma-assisted molecular beam epitaxy (MBE) using lithium aluminate substrates [3]. Since this first demonstration, free-standing m-plane GaN substrates grown by hydride vapor phase epitaxy (HVPE) were employed for subsequent epitaxial GaN/AlGaN MQW growths by both MBE [4] and metalorganic chemical vapor deposition (MOCVD) [5]. In addition to the m-plane, research efforts have investigated a-plane GaN/AlGaN MQW structures grown on r-plane sapphire substrates by both MBE [6] and MOCVD [7]. Optical characterization of these structures has shown that non- polar quantum wells are unaffected by polarization-induced electric fields. The present invention describes the dependence of a-plane GaN/AlGaN MQW emission on the GaN quantum well width. Moreover, an investigation of a range of GaN well widths for MOCVD-grown a-plane and c-plane MQWs provides an indication of the emission characteristics that are unique to non-polar orientations. SUMMARY OF THE INVENTION The present invention describes a method of fabricating non-polar a-plane GaN / (Al,B,In,Ga)N multiple quantum wells (MQWs). In this regard, a-plane MQWs were grown on the appropriate GaN / sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 A to 70 A. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 A for the a-plane MQWs. BRIEF DESCRIPTION OF THE DRAWINGS Referring now to the drawings in which like reference numbers represent corresponding parts throughout: FIG. 1 is a flowchart that illustrates the steps of a method for forming non-polar a- plane GaN / (Al,B,In,Ga)N quantum wells according to a preferred embodiment of the present invention. FIG. 2 is a graph of high-resolution x-ray diffraction (HRXRD) scans of simultaneously regrown a-plane (69 A GaN) / (96 A Al0 ι6Gao 8 N) and c-plane (72 A GaN) / (98 A Al0 ι6Gao 84N) MQW stacks. In addition to the quantum well dimensions, the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the full width at half maximum (FWHM) of the satellite peaks. FIGS. 3(a) and (b) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN / (100 A Al0 ι6Gao 84N) MQWs with well widths ranging from 20 A - 70 A. The vertical gray line on each plot denotes a band edge of the bulk GaN layers. FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs. The dotted line is the result of self- consistent Poisson-Schrodinger (SCPS) calculations for a flat-band GaN / (100 A Al0 ι6Gao 84N) MQW. The emission energy decreases with increasing well width for both growth orientations but above a critical well width, the c-plane MQW emission energy red-shifts below the band edge of the GaN layers. FIG. 5 is a graph of the normalized room temperature PL intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations. The data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane and c-plane MQWs are not possible.
DETAILED DESCRIPTION OF THE INVENTION In the following description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration a specific embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
Overview Non-polar nitride-based semiconductor crystals do not experience the effects of polarization-induced electric fields that dominate the behavior of polar nitride-based quantum structures. Since the polarization axis of a wurtzite nitride unit cell is aligned parallel to the growth direction of polar nitride crystals, internal electric fields are present in polar nitride heterostructures. These "built-in" fields have a detrimental effect on the performance of state-of-the-art optoelectronic and electronic devices. By growing nitride crystals along non-polar directions, quantum structures not influenced by polarization- induced electric fields are realized. Since the energy band profiles of a given quantum well change depending upon the growth orientation, different scientific principles must be applied in order to design high performance non-polar quantum wells. This invention describes the design principles used to produce optimized non-polar quantum wells.
Process Steps FIG. 1 is a flowchart that illustrates the steps of a method for forming quantum wells according to a preferred embodiment of the present invention. The steps of this method grow non-polar a-plane GaN / AlGaN MQWs on a-plane GaN / r-plane sapphire template layers. Block 100 represents loading of a sapphire substrate into a vertical, close-spaced, showerhead MOCVD reactor. For this step, epi-ready sapphire substrates with surfaces crystallographically oriented within +/-2° of the sapphire r-plane may be obtained from commercial vendors. No ex-situ preparations need be performed prior to loading the sapphire substrate into the MOCVD reactor, although ex-situ cleaning of the sapphire substrate could be used as a precautionary measure. Block 102 represents annealing the sapphire substrate in-situ at a high temperature (>1000°C), which improves the quality of the substrate surface on the atomic scale. After annealing, the substrate temperature is reduced for the subsequent low temperature nucleation layer deposition. Block 104 represents depositing a thin, low temperature, low pressure, nitride- based nucleation layer as a buffer layer on the sapphire substrate. Such layers are commonly used in the heteroepitaxial growth of c-plane (0001) nitride semiconductors. In the preferred embodiment, the nucleation layer is comprised of, but is not limited to, 1- 100 nanometers (nm) of GaN deposited at approximately 400-900°C and 1 atm. After depositing the nucleation layer, the reactor temperature is raised to a high temperature, and Block 106 represents one or more growing unintentionally doped (UID) a-plane GaN layers to a thickness of approximately 1.5 μm on the nucleation layer deposited on the substrate. The high temperature growth conditions include, but are not limited to, approximately 1100°C growth temperature, 0.2 atm or less growth pressure, 30 μmol per minute Ga flow, and 40,000 μmol per minute N flow, thereby providing a V/III ratio of approximately 1300). In the preferred embodiment, the precursors used as the group III and V sources are trimethylgallium, ammonia and disilane, although alternative precursors could be used as well. In addition, growth conditions may be varied to produce different growth rates, e.g., between 5 and 9 A per second, without departing from the scope of the present invention. Upon completion of the high temperature growth step, Block 108 represents cooling the epitaxial a-plane GaN layers down under a nitrogen overpressure. Finally, Block 110 represents one or more (Al,B,In,Ga)N layers being grown on the a-plane GaN layers. Preferably, these grown layers comprise -100 A Al0 ι6Gao 84N barriers doped with an Si concentration of ~2 x 10 cm" . Moreover, the above Blocks may be repeated as necessary. In one example, Block 110 was repeated 10 times to form UID GaN wells ranging in width from approximately 20 A to approximately 70 A. Experimental Results For non-polar nitride quantum wells, flat energy band profiles exist and the QCSE is not present. Consequently, non-polar quantum well emission is expected to follow different trends as compared to polar quantum wells. Primarily, non-polar quantum wells exhibit improved recombination efficiency, and intense emission from thicker quantum wells is possible. Moreover, the quantum well width required for optimal non-polar quantum well emission is larger than for polar quantum wells. The following describes the room temperature PL characteristics of non-polar GaN / (~100 A Alo ι6Gao 84N) MQWs in comparison to c-plane structures as a function of quantum well width. To accomplish this, 10-period a-plane and c-plane MQWs structures were simultaneously regrown on the appropriate GaN / sapphire template layers via MOCVD with well widths ranging from approximately 20 A to 70 A. Kinematic analysis of HRXRD measurements [9] made with a Philips MRD XPERT PRO™ diffractometer using CuKαi radiation in triple axis mode confirmed the quantum well dimensions and barrier composition. Room temperature continuous-wave (c-w) PL spectroscopy using the 325 nm line of a He-Cd laser (excitation power density ~ 10 W/cm2) was used to characterize the MQW emission properties. FIG. 2 is a graph of HRXRD scans of simultaneously regrown a-plane 69 A GaN / 96 A Al0 16Gao 8 N and c-plane 72 A GaN / 98 A Alo I 6Ga 8 N MQW stacks. In addition to the quantum well dimensions, the HRXRD profiles provide a qualitative comparison of the MQW interface quality through the FWHM of the satellite peaks. The on-axis 2θ-ω scans of the a-plane and c-plane structures were taken about the GaN (1120) and (0004 ) reflections, respectively. Analysis of the x-ray profiles yields both the aluminum composition x of the AlxGaι-xN barriers and the quantum well dimensions (well and barrier thickness), which agree within 7 % for the simultaneously grown a-plane and c-plane samples indicating a mass transport limited MOCVD growth regime. Both HRXRD profiles reveal superlattice (SL) peaks out to the second order in addition to strong reflections from the GaN layers. The FWHMs of the SL peaks provide a qualitative metric of the quantum well interface quality [10]; therefore, from the scans shown in FIG. 2, a conclusion can be made that the interface quality of a-plane MQWs is inferior to that of the c-plane samples. Analysis of the a-plane MQW structural quality (described in [9]) revealed sharp interfaces despite the large threading dislocation density extending through the MQW from the a-GaN template. The higher threading dislocation (TD) density and increased surface roughness of the a-plane growth in comparison to c- plane are the most likely causes for greater a-plane MQW interface roughness and SL peak broadening. Additionally, it is estimated that the a-plane TD density is approximately two orders of magnitude greater than the c-plane TD density. FIGS. 3(a) and (b) are graphs of room temperature PL spectra of the (a) a-plane and (b) c-plane GaN / (100 A Alo ι6Gao 84N) MQWs with well widths ranging from -20 A to -70 A. The vertical gray line on each plot denotes the bulk GaN band edge. Independent of crystal orientation, the MQW PL emission shifts to longer wavelengths (equivalently, the PL emission decreases) with increasing quantum well width as the quantum confinement is reduced. In particular, the emission energies of the a-plane MQWs steadily approach but do not red-shift beyond the bulk GaN band edge as the well width increases. The resistive nature of UID a-GaN films prevents band edge emission at room temperature, resulting in emissions only from the quantum wells, as is observed in FIG. 3(a). Conversely, the c-plane MQW emission energy red-shifts below the GaN band edge when the GaN quantum well width is increased from 38 A to 50 A. For polar GaN wells wider than 50 A, only PL emission from the underlying GaN was detected. The appearance of c-GaN buffer emission implies that the c-plane template has a lower native point defect density than the a-plane template. Furthermore, yellow band emission was observed for both the non-polar and polar MQWs; therefore, the origin of deep trap levels is most likely the growth conditions required to maintain the a-plane morphology and not a characteristic of the non-polar orientation. The two primary features of the PL emission spectra, the emission energy and the emission intensity, are summarized in FIGS. 4 and 5, respectively, as functions of quantum well width. The emission energy decreases with increasing well width due to quantum confinement effects. FIG. 4 is a graph of the well width dependence of the room temperature PL emission energy of the a-plane and c-plane MQWs. For all quantum well widths studied, the a-plane MQW emission is blue-shifted with respect to the bulk GaN band edge and the blue-shift increases with decreasing well width as quantum confinement raises the quantum well's ground-state energy. The a-plane MQW emission energy trend is modeled accurately using square well SCPS calculations [11] shown as the dotted line in FIG. 4. The agreement between theory and experiment confirms that emission from non- polar MQWs is not influenced by polarization-induced electric fields. Despite this agreement, the theoretical model increasingly over-estimates the experimental data with decreasing quantum well width by 15 to 35 meV. The deviating trend can be explained by the expected increase in exciton binding energy with decreasing well width for GaN/AlGaN MQWs [12,13], since exciton binding energies are not accounted for in the SCPS model. Conversely, FIG. 4 shows the dramatic red-shift in c-plane MQW emission with increasing well width, a widely observed trend dictated by the QCSE [14-18]. Specifically, the experimental c-plane MQW emission energy trend agrees with the model of the polar QW ground state proposed by Grandjean et al. [13]. Interpolating the experimental data, the emission from c-plane MQWs with GaN well widths greater than -43 A is below the bulk GaN band edge. Increasing the well thickness increases the spatial separation of charge carriers within the quantum wells and the recombination efficiency is reduced until MQW emission is no longer observed (wells wider than 50 A). Previously reported emission from an a-plane (107 A GaN) / (101 A Alo.2 Gao.75N) MQW [9] provides additional evidence of the improved quantum efficiency for non-polar MQWs. FIG. 5 is a graph of the normalized room temperature PL emission intensity plotted as a function of GaN quantum well width for both a-plane and c-plane growth orientations. The data for each orientation is normalized separately, hence direct comparisons between the relative intensities of a-plane MQWs and c-plane MQWs are not possible. Since the microstructural quality of the template layers is substantially different, a direct comparison between a-and c-plane MQW emission intensity would be inconclusive. A maximum a-plane MQW emission intensity is associated with an optimal quantum well width of 52 A, while the maximum c-plane emission intensity is observed for 28 A- wide wells. As a result of the QCSE, optimal emission intensity is obtained from relatively thin polar GaN quantum wells (20 A - 35 A) depending on the thickness and composition of the AlGaN barrier layers [13]. The balance between reduced recombination efficiency in thick wells and the reduced recombination due to increased nonradiative transitions at heterointerfaces and extension of electron wavefunctions outside of thin wells [19] determines the optimal c-plane well width. Conversely, since the non-polar MQWs do not experience the QCSE, it is expected that the optimal well width is determined by material quality, interface roughness, and the excitonic Bohr radius. Although the interface roughness of the a-plane structures is greater than the c- plane, the advantageous effects of a non-polar orientation are apparent. Also note that, with improved non-polar surface and interface quality, the optimal well width will most likely shift from the optimal width observed for these samples.
References The following references are incorporated by reference herein: 1. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024
(1997). 2. T. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 39, 413
(2000). 3. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature 406, 865 (2000). 4. A. Bhattacharyya, I. Friel, S. Iyer, T. C. Chen, W. Li, J. Cabalu, Y. Fedyunin, K. F. Ludwig, T. D. Moustakas, H. P. Maruska, D. W. Hill, J. J. Gallagher, M. C. Chou, and B. Chai, J. Cryst. Growth 251, 487 (2003). 5. E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. A. Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, Appl. Phys. Lett. 81, 4130 (2002). 6. H. M. Ng, Appl. Phys. Lett. 80, 4369 (2002). 7. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002). 8. B. P. Keller, S. Keller, D. Kapolnek, W. N. Jiang, Y. F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. Denbaars, J. Electron. Mater. 24, 1707 (1995). 9. M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys., Part 2 42, L235 (2003). 10. G. Bauer and W. Richter, Optical characterization of epitaxial semiconductor layers (Springer Verlag, Berlin, New York, 1996). 11. I. H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, J. Appl. Phys. 68, 4071
(1990). 12. P. Bigenwald, P. Lefebvre, T. Bretagnon, and B. Gil, Phys. Stat. Sol. B 216, 371 (1999). 13. N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laugt, and J. Massies, J. Appl. Phys. 86, 3714 (1999). 14. N. Grandjean, J. Massies, and M. Leroux, Appl. Phys. Lett. 74, 2361
(1999). 15. 1. Jin Seo, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998). 16. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999). 17. G. Traetta, A. Passaseo, M. Longo, D. Cannoletta, R. Cingolani, M. Lomascolo, A. Bonfiglio, A. Di Carlo, F. Delia Sala, P. Lugli, A. Botchkarev, and H. Morkoc, Physica E 7, 929 (2000). 18. M. Leroux, N. Grandjean, M. Laugt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B 58, R13371 (1998). 19. A. Kinoshita, H. Hirayama, P. Riblet, M. Ainoya, A. Hirata, and Y. Aoyagi, MRS Internet J. Nitride Semicond. Res. 5, Wl 1.32 (2000).
Conclusion This concludes the description of the preferred embodiment of the present invention. The following describes some alternative embodiments for accomplishing the present invention. For example, variations in non-polar (Al,In,Ga)N quantum wells and hetero structures design and MOCVD growth conditions may be used in alternative embodiments. Moreover, the specific thickness and composition of the layers, in addition to the number of quantum wells grown, are variables inherent to quantum well structure design and may be used in alternative embodiments of the present invention. Further, the specific MOCVD growth conditions determine the dimensions and compositions of the quantum well structure layers. In this regard, MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Many variations of this process are possible with the variety of reactor designs currently being using in industry and academia. Variations in conditions such as growth temperature, growth pressure, V/III ratio, precursor flows, and source materials are possible without departing from the scope of the present invention. Control of interface quality is another important aspect of the process and is directly related to the flow switching capabilities of particular reactor designs. Continued optimization of the growth conditions will result in more accurate compositional and thickness control of the integrated quantum well layers described above. In addition, a number of different growth methods other than MOCVD could be used in the present invention. For example, the growth method could also be molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, or plasma-enhanced chemical vapor deposition (PECVD). Finally, substrates other than sapphire could be employed. These substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.

Claims

WHAT IS CLAIMED IS: 1. A method for forming a nitride semiconductor device, comprising: (a) growing one or more gallium nitride (GaN) layers on a substrate; and (b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 A to approximately 70 A.
2. The method of claim 1, wherein a maximum emission intensity is associated with a quantum well width of approximately 50 A.
3. The method of claim 1, wherein the quantum well has an optimal width of
52 A.
4. The method of claim 1, wherein a resistive nature of the GaN layers prevents band edge emission at room temperature, resulting in emissions only from the quantum well.
5. The method of claim 1, wherein the GaN layers are non-polar a-plane GaN layers and the substrate is an r-plane substrate.
The method of claim 1, wherein the substrate is a sapphire substrate.
7. The method of claim 1, wherein the growing step (a) comprises: (1) annealing the substrate; (2) depositing a nitride-based nucleation layer on the substrate; (3) growing the GaN layer on the nucleation layer; and (4) cooling the GaN under a nitrogen overpressure.
8. The method of claim 1, wherein the growing steps are performed by a method selected from a group comprising metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, and plasma-enhanced chemical vapor deposition (PECVD).
9. A device manufactured using the method of claim 1.
10. A nitride semiconductor device, wherein the nitride semiconductor device is created using a process comprising: (a) growing one or more gallium nitride (GaN) layers on a substrate; and (b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 A to approximately 70 A.
11. A nitride semiconductor device, comprising: (a) one or more gallium nitride (GaN) layers grown on a substrate; and (b) one or more quantum wells formed from one or more non-polar (Al,B,In,Ga)N layers grown on the GaN layers, wherein the quantum well has a width ranging from approximately 20 A to approximately 70 A.
PCT/US2003/039355 2002-04-15 2003-12-11 NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS Ceased WO2005064643A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
EP03790447A EP1697965A4 (en) 2003-04-15 2003-12-11 NON-POLAR (A1, B, IN, GA) N-QUANTUM MUD
KR1020067013966A KR101074852B1 (en) 2003-12-11 2003-12-11 NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS
AU2003293497A AU2003293497A1 (en) 2003-04-15 2003-12-11 Non-polar (a1,b,in,ga)n quantum wells
JP2005512863A JP5096677B2 (en) 2003-04-15 2003-12-11 Nonpolar (Al, B, In, Ga) N quantum well
US10/582,390 US20070128844A1 (en) 2003-04-15 2003-12-11 Non-polar (a1,b,in,ga)n quantum wells
CN2003801109995A CN1894771B (en) 2003-04-15 2003-12-11 Non-polar (Al,B,In,Ga)N quantum well
US11/140,893 US7208393B2 (en) 2002-04-15 2005-05-31 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US14/921,734 US9893236B2 (en) 2002-04-15 2015-10-23 Non-polar (Al,B,In,Ga)N quantum wells

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/413,691 US20030198837A1 (en) 2002-04-15 2003-04-15 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
US10/413,690 US7091514B2 (en) 2002-04-15 2003-04-15 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US10/413,913 US6900070B2 (en) 2002-04-15 2003-04-15 Dislocation reduction in non-polar gallium nitride thin films
PCT/US2003/021918 WO2004061909A1 (en) 2002-12-16 2003-07-15 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
PCT/US2003/021916 WO2004061969A1 (en) 2002-12-16 2003-07-15 Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/021918 Continuation-In-Part WO2004061909A1 (en) 2002-04-15 2003-07-15 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US10/582,390 A-371-Of-International US20070128844A1 (en) 2002-04-15 2003-12-11 Non-polar (a1,b,in,ga)n quantum wells
US11/123,805 Continuation-In-Part US7186302B2 (en) 2002-12-16 2005-05-06 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US11/140,893 Continuation-In-Part US7208393B2 (en) 2002-04-15 2005-05-31 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US14/921,734 Continuation US9893236B2 (en) 2002-04-15 2015-10-23 Non-polar (Al,B,In,Ga)N quantum wells

Publications (1)

Publication Number Publication Date
WO2005064643A1 true WO2005064643A1 (en) 2005-07-14

Family

ID=38984062

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039355 Ceased WO2005064643A1 (en) 2002-04-15 2003-12-11 NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS

Country Status (6)

Country Link
US (2) US20070128844A1 (en)
EP (1) EP1697965A4 (en)
JP (1) JP5096677B2 (en)
CN (1) CN1894771B (en)
AU (1) AU2003293497A1 (en)
WO (1) WO2005064643A1 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7208393B2 (en) 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US7220658B2 (en) 2002-12-16 2007-05-22 The Regents Of The University Of California Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7566580B2 (en) 2006-11-15 2009-07-28 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
US7982208B2 (en) 2002-04-15 2011-07-19 The Regents Of The University Of California Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US8193020B2 (en) 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
CN102931315A (en) * 2011-08-09 2013-02-13 叶哲良 Semiconductor structure and manufacturing method
US8809867B2 (en) 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
US8956896B2 (en) 2006-12-11 2015-02-17 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
CN116581217A (en) * 2023-07-13 2023-08-11 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010539732A (en) * 2007-09-19 2010-12-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Method for increasing the area of nonpolar and semipolar nitride substrates
TWI380368B (en) * 2009-02-04 2012-12-21 Univ Nat Chiao Tung Manufacture method of a multilayer structure having non-polar a-plane {11-20} iii-nitride layer
CN102146585A (en) * 2011-01-04 2011-08-10 武汉华炬光电有限公司 Non-polar surface GaN epitaxial wafer and preparation method of non-polar surface GaN epitaxial wafer
CN106299041A (en) * 2016-08-29 2017-01-04 华南理工大学 The preparation method and application of the nonpolar LED being grown in r surface sapphire substrate
JP2019012826A (en) * 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 Gallium nitride semiconductor substrate, gallium nitride semiconductor device, imaging device, and manufacturing method thereof
CN109802020B (en) * 2018-12-26 2020-05-19 华灿光电（浙江）有限公司 GaN-based light emitting diode epitaxial wafer and preparation method thereof
CN110571311B (en) * 2019-07-30 2021-12-14 中国科学技术大学 A multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010029086A1 (en) * 2000-02-24 2001-10-11 Masahiro Ogawa Semiconductor device, method for fabricating the same and method for fabricating semiconductor substrate
US20020098641A1 (en) * 1998-04-10 2002-07-25 Yuhzoh Tsuda Semiconductor substrate, light-emitting device, and method for producing the same
WO2003089694A1 (en) 2002-04-15 2003-10-30 The Regents Of The University Of California NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
US20040108513A1 (en) * 2002-12-09 2004-06-10 Yukio Narukawa Nitride semiconductor device and a process of manufacturing the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5974069A (en) * 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5926726A (en) * 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors
JP3955367B2 (en) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Optical semiconductor device and manufacturing method thereof
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
US6590336B1 (en) * 1999-08-31 2003-07-08 Murata Manufacturing Co., Ltd. Light emitting device having a polar plane piezoelectric film and manufacture thereof
KR100362060B1 (en) * 2000-03-23 2002-11-22 삼성전자 주식회사 Electro-absorption typed optical modulator
JP3946427B2 (en) 2000-03-29 2007-07-18 株式会社東芝 Epitaxial growth substrate manufacturing method and semiconductor device manufacturing method using this epitaxial growth substrate
JP3968968B2 (en) * 2000-07-10 2007-08-29 住友電気工業株式会社 Manufacturing method of single crystal GaN substrate
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
PL225235B1 (en) * 2001-10-26 2017-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Substrate for epitaxy
EP1453158A4 (en) * 2001-10-26 2007-09-19 Ammono Sp Zoo Nitride semiconductor laser element, and production method therefor
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
AU2002354467A1 (en) * 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
SG130935A1 (en) * 2002-06-26 2007-04-26 Agency Science Tech & Res Method of cleaving gan/sapphire for forming laser mirror facets
JP4201541B2 (en) 2002-07-19 2008-12-24 豊田合成株式会社 Semiconductor crystal manufacturing method and group III nitride compound semiconductor light emitting device manufacturing method
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020098641A1 (en) * 1998-04-10 2002-07-25 Yuhzoh Tsuda Semiconductor substrate, light-emitting device, and method for producing the same
US20010029086A1 (en) * 2000-02-24 2001-10-11 Masahiro Ogawa Semiconductor device, method for fabricating the same and method for fabricating semiconductor substrate
WO2003089694A1 (en) 2002-04-15 2003-10-30 The Regents Of The University Of California NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
US20040108513A1 (en) * 2002-12-09 2004-06-10 Yukio Narukawa Nitride semiconductor device and a process of manufacturing the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CRAVEN ET AL: "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", APPLIED PHYSICS LETTERS, vol. 81, no. 3, 15 July 2002 (2002-07-15), pages 469 - 471, XP012032986 *
SASAKI ET AL: "Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy", JOURNAL OF APPLIED PHYSICS, vol. 61, no. 7, 1 April 1987 (1987-04-01), pages 2533 - 2540, XP000820119 *
See also references of EP1697965A4

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7982208B2 (en) 2002-04-15 2011-07-19 The Regents Of The University Of California Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US7208393B2 (en) 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US8809867B2 (en) 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
US9039834B2 (en) 2002-04-15 2015-05-26 The Regents Of The University Of California Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition
US8188458B2 (en) 2002-04-15 2012-05-29 The Regents Of The University Of California Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US7847293B2 (en) 2002-12-16 2010-12-07 The Regents Of The University Of California Growth of reduced dislocation density non-polar gallium nitride
US7186302B2 (en) 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US8450192B2 (en) 2002-12-16 2013-05-28 The Regents Of The University Of California Growth of planar, non-polar, group-III nitride films
US7220658B2 (en) 2002-12-16 2007-05-22 The Regents Of The University Of California Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US8502246B2 (en) 2004-05-10 2013-08-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US8882935B2 (en) 2004-05-10 2014-11-11 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition
US7956360B2 (en) 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
US7566580B2 (en) 2006-11-15 2009-07-28 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition
US8455885B2 (en) 2006-11-15 2013-06-04 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition
US8193020B2 (en) 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
US8956896B2 (en) 2006-12-11 2015-02-17 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
CN102931315A (en) * 2011-08-09 2013-02-13 叶哲良 Semiconductor structure and manufacturing method
CN116581217A (en) * 2023-07-13 2023-08-11 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
CN116581217B (en) * 2023-07-13 2023-09-12 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer and preparation method thereof, light-emitting diode

Also Published As

Publication number Publication date
US20160043278A1 (en) 2016-02-11
US20070128844A1 (en) 2007-06-07
CN1894771A (en) 2007-01-10
JP2007524983A (en) 2007-08-30
EP1697965A1 (en) 2006-09-06
US9893236B2 (en) 2018-02-13
JP5096677B2 (en) 2012-12-12
CN1894771B (en) 2012-07-04
AU2003293497A1 (en) 2005-07-21
EP1697965A4 (en) 2011-02-09

Similar Documents

Publication Publication Date Title
US9893236B2 (en) Non-polar (Al,B,In,Ga)N quantum wells
Craven et al. Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
US7091514B2 (en) Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US8450192B2 (en) Growth of planar, non-polar, group-III nitride films
JP5838523B2 (en) Semipolar (Al, In, Ga, B) N or Group III nitride crystals
US7338828B2 (en) Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
WO2004061969A1 (en) Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
CA2669228A1 (en) Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
Orlova et al. Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire
KR101074852B1 (en) NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS
Keller et al. Dislocation reduction in GaN films through selective island growth of InGaN
Zhang MOCVD growth of GaN on 200mm Si and addressing foundry compatibility issues
Dai et al. High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200380110999.5

Country of ref document: CN

AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2005512863

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2007128844

Country of ref document: US

Ref document number: 10582390

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2003790447

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020067013966

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003790447

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 10582390

Country of ref document: US