WO2005084231A3 - Germanium deposition - Google Patents

Germanium deposition Download PDF

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Publication number
WO2005084231A3
WO2005084231A3 PCT/US2005/006150 US2005006150W WO2005084231A3 WO 2005084231 A3 WO2005084231 A3 WO 2005084231A3 US 2005006150 W US2005006150 W US 2005006150W WO 2005084231 A3 WO2005084231 A3 WO 2005084231A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
seed layer
germanium
depositing
continuing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/006150
Other languages
French (fr)
Other versions
WO2005084231A2 (en
Inventor
Matthias Bauer
Paul D Brabant
Trevan Landin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM America Inc
Original Assignee
ASM America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM America Inc filed Critical ASM America Inc
Priority to JP2007501016A priority Critical patent/JP4982355B2/en
Priority to EP05723841A priority patent/EP1763893A2/en
Publication of WO2005084231A2 publication Critical patent/WO2005084231A2/en
Anticipated expiration legal-status Critical
Publication of WO2005084231A3 publication Critical patent/WO2005084231A3/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method comprises, depositing a seed layer of germanium over a silicon-containing surface at a first temperature in a seed deposition process 130. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium in a temperature ramp process 140. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium in a bulk deposition process 150. The second temperature range is greater than the first temperature.
PCT/US2005/006150 2004-02-27 2005-02-25 Germanium deposition Ceased WO2005084231A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007501016A JP4982355B2 (en) 2004-02-27 2005-02-25 Method for forming germanium film
EP05723841A EP1763893A2 (en) 2004-02-27 2005-02-25 Germanium deposition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US54826904P 2004-02-27 2004-02-27
US60/548,269 2004-02-27
US55675204P 2004-03-26 2004-03-26
US60/556,752 2004-03-26

Publications (2)

Publication Number Publication Date
WO2005084231A2 WO2005084231A2 (en) 2005-09-15
WO2005084231A3 true WO2005084231A3 (en) 2009-06-25

Family

ID=34922680

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/006150 Ceased WO2005084231A2 (en) 2004-02-27 2005-02-25 Germanium deposition

Country Status (4)

Country Link
US (2) US7329593B2 (en)
EP (1) EP1763893A2 (en)
JP (1) JP4982355B2 (en)
WO (1) WO2005084231A2 (en)

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Also Published As

Publication number Publication date
JP2008501226A (en) 2008-01-17
JP4982355B2 (en) 2012-07-25
EP1763893A2 (en) 2007-03-21
US7329593B2 (en) 2008-02-12
US20050191826A1 (en) 2005-09-01
US20080017101A1 (en) 2008-01-24
US7479443B2 (en) 2009-01-20
WO2005084231A2 (en) 2005-09-15

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