WO2006012766A3 - Adhesion layer for thin film transistors - Google Patents

Adhesion layer for thin film transistors Download PDF

Info

Publication number
WO2006012766A3
WO2006012766A3 PCT/CH2005/000450 CH2005000450W WO2006012766A3 WO 2006012766 A3 WO2006012766 A3 WO 2006012766A3 CH 2005000450 W CH2005000450 W CH 2005000450W WO 2006012766 A3 WO2006012766 A3 WO 2006012766A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistors
poly
adhesion layer
microcrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CH2005/000450
Other languages
French (fr)
Other versions
WO2006012766A2 (en
Inventor
Quoc Hai Tran
Jerome Villette
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Unaxis Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Balzers AG filed Critical Unaxis Balzers AG
Priority to EP05762954A priority Critical patent/EP1789604B1/en
Priority to US11/573,162 priority patent/US8673410B2/en
Priority to AT05762954T priority patent/ATE526433T1/en
Publication of WO2006012766A2 publication Critical patent/WO2006012766A2/en
Publication of WO2006012766A3 publication Critical patent/WO2006012766A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method for manufacturing a poly- or microcrystalline silicon layer on an insulator comprises a silicon containing insulator, growing a thin adhesion promoting layer comprising amorphous silicon onto it and further growing a poly- or microcrystalline silicon layer onto the adhesion promoting layer. Such a sequence of layers, deposited with a PECVD method, shows good adhesion of the poly- or microcrystalline silicon on the base and is advantageous in the production of semiconductors, such as thin film transistors.
PCT/CH2005/000450 2004-08-04 2005-07-28 Adhesion layer for thin film transistors Ceased WO2006012766A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05762954A EP1789604B1 (en) 2004-08-04 2005-07-28 Adhesion layer for thin film transistors
US11/573,162 US8673410B2 (en) 2004-08-04 2005-07-28 Adhesion layer for thin film transistors
AT05762954T ATE526433T1 (en) 2004-08-04 2005-07-28 ADHESIVE LAYER FOR THIN FILM TRANSISTOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59859904P 2004-08-04 2004-08-04
US60/598,599 2004-08-04

Publications (2)

Publication Number Publication Date
WO2006012766A2 WO2006012766A2 (en) 2006-02-09
WO2006012766A3 true WO2006012766A3 (en) 2006-04-20

Family

ID=35517549

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2005/000450 Ceased WO2006012766A2 (en) 2004-08-04 2005-07-28 Adhesion layer for thin film transistors

Country Status (5)

Country Link
US (1) US8673410B2 (en)
EP (1) EP1789604B1 (en)
AT (1) ATE526433T1 (en)
TW (1) TWI386512B (en)
WO (1) WO2006012766A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI519668B (en) 2014-07-17 2016-02-01 國立清華大學 Substrate with crystalline germanium film and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040035822A1 (en) * 2002-08-26 2004-02-26 Toshihiro Tsumori Plated substrate for hard disk medium and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117020A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Magnetic head and production method of it
JPH0388321A (en) * 1989-08-31 1991-04-12 Tonen Corp Polycrystalline silicon thin film
US5444302A (en) * 1992-12-25 1995-08-22 Hitachi, Ltd. Semiconductor device including multi-layer conductive thin film of polycrystalline material
JPH076960A (en) * 1993-06-16 1995-01-10 Fuji Electric Co Ltd Method for producing polycrystalline semiconductor thin film
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JP3416723B2 (en) * 1995-05-25 2003-06-16 独立行政法人産業技術総合研究所 Amorphous silicon thin film transistor and method of manufacturing the same
US5869389A (en) * 1996-01-18 1999-02-09 Micron Technology, Inc. Semiconductor processing method of providing a doped polysilicon layer
US6479166B1 (en) * 1998-10-06 2002-11-12 Case Western Reserve University Large area polysilicon films with predetermined stress characteristics and method for producing same
US6232208B1 (en) * 1998-11-06 2001-05-15 Advanced Micro Devices, Inc. Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile
KR101027485B1 (en) * 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 Improved Process for Semiconductor Thin Film Deposition
KR100806906B1 (en) * 2001-09-25 2008-02-22 삼성전자주식회사 LCD, its driving device and driving method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040035822A1 (en) * 2002-08-26 2004-02-26 Toshihiro Tsumori Plated substrate for hard disk medium and manufacturing method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
I.D. FRENCH ET AL: "Microcrystalline Si TFTs for integrated multiplexers and shift registers", SID CONFERENCE RECORD OF THE INTERNATIONAL DISPLAY RESEARCH CONFERENCE, 1 January 2001 (2001-01-01), JP, pages 367 - 370, XP008058418 *
P. ROCA I CABARROCAS: "MICROCRYSTALLINE SILICON: AN EMERGING MATERIAL FOR STABLE THIN-FILM TRANSISTORS.", JOURNAL OF THE SID, vol. 12, no. 1, 1 March 2004 (2004-03-01), US, pages 3 - 9, XP008058508 *
S. VEPREK ET AL: "Parameters controlling the deposition of amorphous and microcrystalline silicon in Si/H discharge plasmas", JOURNAL DE PHYSIQUE COLLOQUE, vol. 42, no. c-4, 1 October 1981 (1981-10-01), fr, pages 251 - 255, XP008058542 *

Also Published As

Publication number Publication date
TW200630502A (en) 2006-09-01
EP1789604A2 (en) 2007-05-30
EP1789604B1 (en) 2011-09-28
ATE526433T1 (en) 2011-10-15
US8673410B2 (en) 2014-03-18
WO2006012766A2 (en) 2006-02-09
US20070254165A1 (en) 2007-11-01
TWI386512B (en) 2013-02-21

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