WO2006026539A3 - Semiconductive percolating networks - Google Patents

Semiconductive percolating networks Download PDF

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Publication number
WO2006026539A3
WO2006026539A3 PCT/US2005/030632 US2005030632W WO2006026539A3 WO 2006026539 A3 WO2006026539 A3 WO 2006026539A3 US 2005030632 W US2005030632 W US 2005030632W WO 2006026539 A3 WO2006026539 A3 WO 2006026539A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductive
percolating networks
percolating
networks
printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/030632
Other languages
French (fr)
Other versions
WO2006026539A9 (en
WO2006026539A2 (en
Inventor
Graciele Beat Blanchet-Fincher
Xiang-Cheng Bo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Priority to US11/661,155 priority Critical patent/US20090146134A1/en
Priority to EP05808465A priority patent/EP1794822A2/en
Priority to JP2007530219A priority patent/JP2008511735A/en
Publication of WO2006026539A2 publication Critical patent/WO2006026539A2/en
Publication of WO2006026539A3 publication Critical patent/WO2006026539A3/en
Publication of WO2006026539A9 publication Critical patent/WO2006026539A9/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/28—Solid content in solvents

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The present invention relates to a semiconductive composition comprising carbon nanotubes in a matrix. These semiconductive compositions are useful in printing semiconducting portions of thin film transistors.
PCT/US2005/030632 2004-08-27 2005-08-25 Semiconductive percolating networks Ceased WO2006026539A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/661,155 US20090146134A1 (en) 2004-08-27 2005-08-25 Semiconductive percolating networks
EP05808465A EP1794822A2 (en) 2004-08-27 2005-08-25 Semiconductive percolating networks
JP2007530219A JP2008511735A (en) 2004-08-27 2005-08-25 Semiconductive percolation network

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60534304P 2004-08-27 2004-08-27
US60/605,343 2004-08-27

Publications (3)

Publication Number Publication Date
WO2006026539A2 WO2006026539A2 (en) 2006-03-09
WO2006026539A3 true WO2006026539A3 (en) 2006-05-26
WO2006026539A9 WO2006026539A9 (en) 2006-07-06

Family

ID=35588925

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/030632 Ceased WO2006026539A2 (en) 2004-08-27 2005-08-25 Semiconductive percolating networks

Country Status (6)

Country Link
US (1) US20090146134A1 (en)
EP (1) EP1794822A2 (en)
JP (1) JP2008511735A (en)
KR (1) KR20070061552A (en)
CN (1) CN101091266A (en)
WO (1) WO2006026539A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10689252B2 (en) 2006-08-30 2020-06-23 Northwestern University Monodisperse single-walled carbon nanotube populations and related methods for providing same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
JP5076319B2 (en) * 2005-08-19 2012-11-21 東レ株式会社 Carbon nanotube dispersion
JP5209211B2 (en) * 2006-04-25 2013-06-12 哲男 日野 Reaction product of carbon material and phenylene derivative, conductive composition using the same, and process for producing reaction product
KR101206661B1 (en) * 2006-06-02 2012-11-30 삼성전자주식회사 Organic electronic device comprising semiconductor layer and source/drain electrodes which are formed from materials of same series
KR101276898B1 (en) * 2008-02-01 2013-06-19 혼하이 프리시젼 인더스트리 컴퍼니 리미티드 Carbon nanotube composite material and methods for making the same
CN101497437B (en) 2008-02-01 2012-11-21 清华大学 Preparation method of carbon nanotube composite film
JP4504453B2 (en) 2008-02-01 2010-07-14 ツィンファ ユニバーシティ Method for producing linear carbon nanotube structure
CN101497438B (en) 2008-02-01 2012-11-21 清华大学 Carbon nano-tube compound film
CN101582449B (en) * 2008-05-14 2011-12-14 清华大学 Thin film transistor
JP5439823B2 (en) * 2009-01-19 2014-03-12 日産化学工業株式会社 Carbon nanotube dispersion and solubilizer
JP5510630B2 (en) * 2009-02-27 2014-06-04 国立大学法人 東京大学 Method for producing two-dimensionally patterned carbon nanotube, and two-dimensionally patterned carbon nanotube
US8748873B2 (en) * 2011-01-21 2014-06-10 Samsung Electronics Co., Ltd. Electronic device with dual semiconducting layer
CN104576394B (en) * 2013-10-22 2017-08-08 中国科学院苏州纳米技术与纳米仿生研究所 A kind of large area prints the preparation method of independent carbon nano-tube film transistor
EP3762979A1 (en) 2018-03-07 2021-01-13 Clap Co., Ltd. Patterning method for preparing top-gate, bottom-contact organic field effect transistors
KR102341687B1 (en) * 2018-03-08 2021-12-21 주식회사 클랩 Organic Field Effect Transistors Including Semiconducting Single Walled Carbon Nanotubes and Organic Semiconducting Materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003074601A2 (en) * 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Printing of organic conductive polymers containing additives
WO2004070349A2 (en) * 2002-11-27 2004-08-19 William Marsh Rice University Functionalized carbon nanotube-polymer composites and interactions with radiation
EP1449887A1 (en) * 2001-09-27 2004-08-25 Toray Industries, Inc. Organic semiconductor material and organic semiconductor element employing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1361619A3 (en) * 2002-05-09 2007-08-15 Konica Corporation Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
CN1953935B (en) * 2004-05-14 2010-05-05 索尼德国有限责任公司 Composites including carbon nanotubes and metal carbonates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1449887A1 (en) * 2001-09-27 2004-08-25 Toray Industries, Inc. Organic semiconductor material and organic semiconductor element employing the same
WO2003074601A2 (en) * 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Printing of organic conductive polymers containing additives
WO2004070349A2 (en) * 2002-11-27 2004-08-19 William Marsh Rice University Functionalized carbon nanotube-polymer composites and interactions with radiation

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KYMAKIS E ET AL: "High open-circuit voltage photovoltaic devices from carbon-nanotube-polymer composites", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 93, no. 3, 1 February 2003 (2003-02-01), pages 1764 - 1768, XP012058984, ISSN: 0021-8979 *
TSUKAGOSHI KAZUHITO ET AL: "Pentacene nanotransistor with carbon nanotube electrodes", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 85, no. 6, 9 August 2004 (2004-08-09), pages 1021 - 1023, XP012064135, ISSN: 0003-6951 *
TSUKAMOTO J ET AL: "INFLUENCE OF SMALL AMOUNTS OF DISPERSED SINGLE-WALLED CARBON-NANOTUBES ON THE OPTICAL PROPERTIES OF POLY-3-HEXYLTHIOPHENE", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 43, no. 2A, 1 February 2004 (2004-02-01), pages L214 - L216, XP001191839, ISSN: 0021-4922 *
ZAUMSEIL JANA ET AL: "Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 93, no. 10, 15 May 2003 (2003-05-15), pages 6117 - 6124, XP012057796, ISSN: 0021-8979 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10689252B2 (en) 2006-08-30 2020-06-23 Northwestern University Monodisperse single-walled carbon nanotube populations and related methods for providing same
US11608269B2 (en) 2006-08-30 2023-03-21 Northwestern University Monodisperse single-walled carbon nanotube populations and related methods for providing same

Also Published As

Publication number Publication date
CN101091266A (en) 2007-12-19
WO2006026539A9 (en) 2006-07-06
EP1794822A2 (en) 2007-06-13
KR20070061552A (en) 2007-06-13
US20090146134A1 (en) 2009-06-11
WO2006026539A2 (en) 2006-03-09
JP2008511735A (en) 2008-04-17

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