WO2006034739A3 - Verfahren zum vakuumbeschichten mit einer photohalbleitenden schicht und anwendung des verfahrens - Google Patents

Verfahren zum vakuumbeschichten mit einer photohalbleitenden schicht und anwendung des verfahrens Download PDF

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Publication number
WO2006034739A3
WO2006034739A3 PCT/EP2005/006238 EP2005006238W WO2006034739A3 WO 2006034739 A3 WO2006034739 A3 WO 2006034739A3 EP 2005006238 W EP2005006238 W EP 2005006238W WO 2006034739 A3 WO2006034739 A3 WO 2006034739A3
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WO
WIPO (PCT)
Prior art keywords
coating
photo
vacuum
titanium
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2005/006238
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English (en)
French (fr)
Other versions
WO2006034739A2 (de
Inventor
Peter Frach
Daniel Gloess
Klaus Goedicke
Sigrun Klinkenberg
Christian Gottfried
Volker Kirchhoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to EP05761661A priority Critical patent/EP1791987A2/de
Publication of WO2006034739A2 publication Critical patent/WO2006034739A2/de
Publication of WO2006034739A3 publication Critical patent/WO2006034739A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zum Vakuumbeschichten eines Objektes mit einer photohalbleitenden Schicht, wobei die Temperatur des oberflächennahen Bereiches des Objektes vor der Beschichtung auf einen Wert im Bereich von -40 °C bis +250 °C eingestellt wird; ein reaktiver Puls-Magnetron-Sputterprozess mit mindestens einem elektrisch leitfähigen Target, welches als Hauptbestandteil Titan enthält, in einem mindestens ein Inertgas und Sauerstoff enthaltenden Arbeitsgas betrieben wird; durch die Prozessführung in Abhängigkeit vom Anwendungszweck des beschichteten Objektes die Bildung von überwiegend Titanoxid in einem fest vorgegebenen Verhältnis der atomaren Zusammensetzung der Schicht von Titan zu Sauerstoff wie 1 : (2+x) gesichert wird, wobei x im Bereich von -0,5 bis +0,3 ist; ein solches Verhältnis der Raten von ionisierten und neutralen Teilchen während der Schichtbildung eingestellt wird, dass ein Anteil von mindestens 5 Prozent Titanoxid in kristalliner Modifikation gebildet wird und dass die Parameter des Sputter prozesses so ausgewählt werden, dass die Oberflächentemperatur des Objektes eine Maximaltemperatur von 300 °C nicht überschreitet.
PCT/EP2005/006238 2004-09-24 2005-06-10 Verfahren zum vakuumbeschichten mit einer photohalbleitenden schicht und anwendung des verfahrens Ceased WO2006034739A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05761661A EP1791987A2 (de) 2004-09-24 2005-06-10 Verfahren zum vakuumbeschichten mit einer photohalbleitenden schicht und anwendung des verfahrens

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200410046390 DE102004046390A1 (de) 2004-09-24 2004-09-24 Verfahren zum Vakuumbeschichten mit einer photohalbleitenden Schicht und Anwendung des Verfahrens
DE102004046390.5 2004-09-24

Publications (2)

Publication Number Publication Date
WO2006034739A2 WO2006034739A2 (de) 2006-04-06
WO2006034739A3 true WO2006034739A3 (de) 2006-06-08

Family

ID=35033510

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Application Number Title Priority Date Filing Date
PCT/EP2005/006238 Ceased WO2006034739A2 (de) 2004-09-24 2005-06-10 Verfahren zum vakuumbeschichten mit einer photohalbleitenden schicht und anwendung des verfahrens

Country Status (3)

Country Link
EP (1) EP1791987A2 (de)
DE (1) DE102004046390A1 (de)
WO (1) WO2006034739A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100465332C (zh) * 2006-12-14 2009-03-04 上海交通大学 低温下制备锐钛矿晶相二氧化钛薄膜的方法
DE102008028542B4 (de) * 2008-06-16 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion
FR2947816B1 (fr) * 2009-07-09 2011-07-22 Saint Gobain Procede de depot par pulverisation cathodique, produit obtenu et cible de pulverisation
DE102013213935B4 (de) 2013-07-16 2015-08-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden einer piezoelektrischen AlN-haltigen Schicht
CN105648414B (zh) * 2016-03-05 2018-10-30 无锡南理工科技发展有限公司 一种采用磁控溅射法制备含氮二氧化钛薄膜的方法
CN109722631B (zh) * 2019-01-24 2019-12-17 中国地质大学（武汉） 基于TiN衬底的NiFe磁性合金薄膜及其制备方法
CN111850492B (zh) * 2020-07-03 2021-09-21 南京航空航天大学 一种基于摩擦诱导抗菌特性增强涂层的制备方法
CN113930723B (zh) * 2021-10-14 2023-08-04 河南理工大学 一种高度择优取向Magnéli相Ti6O11透明导电薄膜及其制备方法和应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
DE19740793A1 (de) * 1997-09-17 1999-03-18 Bosch Gmbh Robert Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden
WO2002057508A2 (en) * 2001-01-17 2002-07-25 N.V. Bekaert S.A. Method for the production of sputtering targets

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
DE19740793A1 (de) * 1997-09-17 1999-03-18 Bosch Gmbh Robert Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden
WO2002057508A2 (en) * 2001-01-17 2002-07-25 N.V. Bekaert S.A. Method for the production of sputtering targets

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FRACH P ET AL: "High rate deposition of insulating TiO2 and conducting ITO films for optical and display applications", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 445, no. 2, 15 December 2003 (2003-12-15), pages 251 - 258, XP004479601, ISSN: 0040-6090 *
ZYWITZKI O ET AL: "Structure and properties of crystalline titanium oxide layers deposited by reactive pulse magnetron sputtering", SURFACE & COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, vol. 180-181, 1 March 2004 (2004-03-01), pages 538 - 543, XP002375831, ISSN: 0257-8972 *

Also Published As

Publication number Publication date
EP1791987A2 (de) 2007-06-06
WO2006034739A2 (de) 2006-04-06
DE102004046390A1 (de) 2006-04-06

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