WO2006076354A3 - Diamond medical devices - Google Patents

Diamond medical devices Download PDF

Info

Publication number
WO2006076354A3
WO2006076354A3 PCT/US2006/000808 US2006000808W WO2006076354A3 WO 2006076354 A3 WO2006076354 A3 WO 2006076354A3 US 2006000808 W US2006000808 W US 2006000808W WO 2006076354 A3 WO2006076354 A3 WO 2006076354A3
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
structures
growth surface
implanted layer
device formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/000808
Other languages
French (fr)
Other versions
WO2006076354A2 (en
Inventor
Robert C Linares
Patrick J Doering
Bryant Linares
Alfred R Genis
William W Dromeshauser
Michael Murray
Alicia E Novak
John M Abrahams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apollo Diamond Inc
Original Assignee
Apollo Diamond Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/056,338 external-priority patent/US20050181210A1/en
Priority claimed from US11/178,623 external-priority patent/US7122837B2/en
Application filed by Apollo Diamond Inc filed Critical Apollo Diamond Inc
Priority to EP06717944A priority Critical patent/EP1842227A2/en
Priority to JP2007551323A priority patent/JP2008526682A/en
Priority to CN200680007879.6A priority patent/CN101203939B/en
Priority to AU2006268130A priority patent/AU2006268130B2/en
Publication of WO2006076354A2 publication Critical patent/WO2006076354A2/en
Publication of WO2006076354A3 publication Critical patent/WO2006076354A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2044—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Materials For Medical Uses (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.
PCT/US2006/000808 2005-01-11 2006-01-11 Diamond medical devices Ceased WO2006076354A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP06717944A EP1842227A2 (en) 2005-01-11 2006-01-11 Diamond medical devices
JP2007551323A JP2008526682A (en) 2005-01-11 2006-01-11 Diamond medical device
CN200680007879.6A CN101203939B (en) 2005-01-11 2006-01-11 Method for processing diamond and apparatus using diamond semiconductor
AU2006268130A AU2006268130B2 (en) 2005-01-11 2006-07-11 Structures formed in diamond

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US64339005P 2005-01-11 2005-01-11
US60/643,390 2005-01-11
US11/056,338 2005-02-11
US11/056,338 US20050181210A1 (en) 2004-02-13 2005-02-11 Diamond structure separation
US11/178,623 2005-07-11
US11/178,623 US7122837B2 (en) 2005-01-11 2005-07-11 Structures formed in diamond

Related Child Applications (1)

Application Number Title Priority Date Filing Date
AU2006268130A Division AU2006268130B2 (en) 2005-01-11 2006-07-11 Structures formed in diamond

Publications (2)

Publication Number Publication Date
WO2006076354A2 WO2006076354A2 (en) 2006-07-20
WO2006076354A3 true WO2006076354A3 (en) 2007-01-11

Family

ID=36217497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/000808 Ceased WO2006076354A2 (en) 2005-01-11 2006-01-11 Diamond medical devices

Country Status (4)

Country Link
EP (1) EP1842227A2 (en)
JP (1) JP2008526682A (en)
CN (2) CN101838844A (en)
WO (1) WO2006076354A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829377B2 (en) 2005-01-11 2010-11-09 Apollo Diamond, Inc Diamond medical devices
US8455278B2 (en) 2005-07-11 2013-06-04 Apollo Diamond, Inc Method of forming a waveguide in diamond

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517263A (en) 2007-01-22 2010-05-20 エレメント シックス リミテッド Diamond electronic devices and methods of manufacturing the same
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
JP5142282B2 (en) * 2008-09-09 2013-02-13 独立行政法人産業技術総合研究所 Diamond surface processing method
JP5245159B2 (en) * 2008-10-16 2013-07-24 独立行政法人産業技術総合研究所 Method for forming flow path in diamond substrate
JP5403519B2 (en) * 2010-02-22 2014-01-29 独立行政法人物質・材料研究機構 Method for producing crystalline diamond air gap structure
GB201013112D0 (en) * 2010-08-04 2010-09-22 Element Six Ltd A diamond optical element
GB201107730D0 (en) * 2011-05-10 2011-06-22 Element Six Ltd Diamond sensors, detectors and quantum devices
GB201301556D0 (en) * 2013-01-29 2013-03-13 Element Six Ltd Synthetic diamond materials for quantum and optical applications and methods of making the same
WO2015199180A1 (en) 2014-06-25 2015-12-30 住友電気工業株式会社 Process for producing diamond substrate, diamond substrate, and diamond composite substrate
US11001938B2 (en) * 2014-08-11 2021-05-11 Sumitomo Electric Industries, Ltd. Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond
AU2015333580B2 (en) * 2014-10-15 2019-04-11 The University Of Melbourne Method of fabricating a diamond membrane
DE102017205268A1 (en) * 2017-03-29 2018-10-04 Robert Bosch Gmbh Method for manufacturing a crystal body unit for a sensor device, method for producing a sensor device, system and method for detecting a measured variable and sensor device
CN109666917B (en) * 2018-12-20 2021-03-23 长沙新材料产业研究院有限公司 Diamond surface structure and preparation method thereof
FR3123149B1 (en) * 2021-05-18 2023-12-15 Inst Nat Sante Rech Med Optoelectronic device, single photon generator, memory, multiplexer, implant and associated method

Citations (3)

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Publication number Priority date Publication date Assignee Title
EP0745707A1 (en) * 1995-05-31 1996-12-04 Air Products And Chemicals, Inc. Method for the growth of large single crystals
US5587210A (en) * 1994-06-28 1996-12-24 The United States Of America As Represented By The Secretary Of The Navy Growing and releasing diamonds
EP1119045A2 (en) * 2000-01-19 2001-07-25 Japan Fine Ceramics Center Diamond interconnection substrate and a manufacturing method therefor

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JPH0558784A (en) * 1991-09-02 1993-03-09 Toyota Central Res & Dev Lab Inc Method for depositing diamond
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JP3204804B2 (en) * 1993-06-25 2001-09-04 日本特殊陶業株式会社 Selective diamond formation
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US5587210A (en) * 1994-06-28 1996-12-24 The United States Of America As Represented By The Secretary Of The Navy Growing and releasing diamonds
EP0745707A1 (en) * 1995-05-31 1996-12-04 Air Products And Chemicals, Inc. Method for the growth of large single crystals
EP1119045A2 (en) * 2000-01-19 2001-07-25 Japan Fine Ceramics Center Diamond interconnection substrate and a manufacturing method therefor

Non-Patent Citations (2)

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HOSHIKAWA K ET AL: "PRODUCTION OF BRIDGE STRUCTURE USING DIAMOND FILM", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 281/282, no. 1/2, 1 August 1996 (1996-08-01), pages 545 - 547, XP000643455, ISSN: 0040-6090 *
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829377B2 (en) 2005-01-11 2010-11-09 Apollo Diamond, Inc Diamond medical devices
US8455278B2 (en) 2005-07-11 2013-06-04 Apollo Diamond, Inc Method of forming a waveguide in diamond

Also Published As

Publication number Publication date
WO2006076354A2 (en) 2006-07-20
CN101203939A (en) 2008-06-18
EP1842227A2 (en) 2007-10-10
JP2008526682A (en) 2008-07-24
CN101838844A (en) 2010-09-22
CN101203939B (en) 2010-06-16

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