WO2007087769A3 - Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht - Google Patents

Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht Download PDF

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Publication number
WO2007087769A3
WO2007087769A3 PCT/DE2006/001617 DE2006001617W WO2007087769A3 WO 2007087769 A3 WO2007087769 A3 WO 2007087769A3 DE 2006001617 W DE2006001617 W DE 2006001617W WO 2007087769 A3 WO2007087769 A3 WO 2007087769A3
Authority
WO
WIPO (PCT)
Prior art keywords
spreading layer
current spreading
semiconductor component
optoelectronic semiconductor
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2006/001617
Other languages
English (en)
French (fr)
Other versions
WO2007087769A2 (de
Inventor
Magnus Ahlstedt
Dieter Eissler
Robert Walter
Ralf Wirth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE502006005304T priority Critical patent/DE502006005304D1/de
Priority to JP2008532584A priority patent/JP2009510738A/ja
Priority to US11/992,706 priority patent/US8501513B2/en
Priority to EP06849368A priority patent/EP1929552B1/de
Priority to KR1020087009927A priority patent/KR101278851B1/ko
Priority to CN2006800356471A priority patent/CN101273468B/zh
Publication of WO2007087769A2 publication Critical patent/WO2007087769A2/de
Publication of WO2007087769A3 publication Critical patent/WO2007087769A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Es wird ein optoelektronisches Halbleiterbauelement mit einem Halbleiterkörper (10), und einer Stromaufweitungsschicht (3) angegeben. Die Stromaufweitungsschicht (3) ist zumindest stellenweise auf den Halbleiterkörper (10) aufgebracht. Dabei enthält die Stromaufweitungsschicht (3) ein Metall (1), das in der Stromaufweitungsschicht ein transparentes, elektrisch leitfähiges Metalloxid (2) bildet, und die Konzentration (x) des Metalls (1) nimmt von der dem Halbleiterkörper (10) zugewandten Seite zur dem Halbleiterkörper (10) abgewandten Seite der Stromaufweitungsschicht (3) hin ab. Ferner wird ein Verfahren zur Herstellung eines solchen Halbleiterbauelements angegeben.
PCT/DE2006/001617 2005-09-27 2006-09-14 Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht Ceased WO2007087769A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE502006005304T DE502006005304D1 (de) 2005-09-27 2006-09-14 Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht
JP2008532584A JP2009510738A (ja) 2005-09-27 2006-09-14 電流拡大層を有するオプトエレクトロニクス半導体構造素子
US11/992,706 US8501513B2 (en) 2005-09-27 2006-09-14 Optoelectronic semiconductor component with current spreading layer
EP06849368A EP1929552B1 (de) 2005-09-27 2006-09-14 Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht
KR1020087009927A KR101278851B1 (ko) 2005-09-27 2006-09-14 전류 확산층을 포함한 광전자 반도체 소자
CN2006800356471A CN101273468B (zh) 2005-09-27 2006-09-14 具有电流扩展层的光电子半导体器件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005046190.5 2005-09-27
DE102005046190A DE102005046190A1 (de) 2005-09-27 2005-09-27 Optoelektronisches Halbleiterbauelement mit Stromaufweitungsschicht

Publications (2)

Publication Number Publication Date
WO2007087769A2 WO2007087769A2 (de) 2007-08-09
WO2007087769A3 true WO2007087769A3 (de) 2007-09-20

Family

ID=37596262

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2006/001617 Ceased WO2007087769A2 (de) 2005-09-27 2006-09-14 Optoelektronisches halbleiterbauelement mit stromaufweitungsschicht

Country Status (8)

Country Link
US (1) US8501513B2 (de)
EP (1) EP1929552B1 (de)
JP (1) JP2009510738A (de)
KR (1) KR101278851B1 (de)
CN (1) CN101273468B (de)
DE (2) DE102005046190A1 (de)
TW (1) TWI312205B (de)
WO (1) WO2007087769A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP4886766B2 (ja) 2008-12-25 2012-02-29 株式会社東芝 半導体発光素子
DE102009054784A1 (de) * 2009-12-16 2011-06-22 Osram Gesellschaft mit beschränkter Haftung, 81543 Halbleiterchip und Verfahren zum Herstellen eines Halbleiterchips
JP5957012B2 (ja) * 2011-12-28 2016-07-27 パナソニック株式会社 光電気素子
US9391232B1 (en) * 2014-12-19 2016-07-12 Intermolecular, Inc. Variable composition transparent conductive oxide layer and methods of forming thereof
CN104617181B (zh) * 2015-01-22 2017-05-24 苏州苏纳光电有限公司 基于ITO电流扩展层的InGaAs雪崩红外探测器及其制备方法
CN105489732B (zh) * 2015-12-08 2017-12-22 天津三安光电有限公司 垂直发光二极管的制作方法
DE102016106928A1 (de) * 2016-04-14 2017-10-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN108461597A (zh) * 2018-02-02 2018-08-28 南昌大学 一种发光二极管电极装置
DE102019100799A1 (de) 2019-01-14 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einem schichtstapel mit anisotroper leitfähigkeit und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US12446378B2 (en) 2022-09-29 2025-10-14 Bolb Inc. Current spreading structure for light-emitting diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861636A (en) * 1995-04-11 1999-01-19 Nec Corporation Surface emitting visible light emiting diode having ring-shaped electrode
JP2004146539A (ja) * 2002-10-23 2004-05-20 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
WO2005024961A1 (de) * 2003-08-29 2005-03-17 Osram Opto Semiconductors Gmbh Strahlungemittierendes halbleiterbauelement
DE10346606A1 (de) * 2003-08-29 2005-03-31 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
JPH07283167A (ja) 1994-04-12 1995-10-27 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極材料
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
TW385375B (en) * 1996-07-26 2000-03-21 Asahi Glass Co Ltd Transparent conductive film and forming method for transparent electrode
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6693352B1 (en) * 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
JP2002314132A (ja) 2001-04-11 2002-10-25 Hitachi Cable Ltd 半導体発光ダイオードおよび半導体発光ダイオード用エピタキシャルウェハ
JP3697609B2 (ja) 2001-05-23 2005-09-21 日立電線株式会社 半導体発光素子
DE10203809B4 (de) 2002-01-31 2010-05-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US6777257B2 (en) 2002-05-17 2004-08-17 Shin-Etsu Handotai Co., Ltd. Method of fabricating a light emitting device and light emitting device
US7041529B2 (en) 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
CN100477298C (zh) * 2003-07-04 2009-04-08 厦门市三安光电科技有限公司 一种发光二极管外延结构
WO2005022496A2 (en) 2003-08-29 2005-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP4543700B2 (ja) 2004-02-27 2010-09-15 日亜化学工業株式会社 半導体発光素子
JP2005150772A (ja) 2005-02-02 2005-06-09 Sharp Corp 半導体発光素子および製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861636A (en) * 1995-04-11 1999-01-19 Nec Corporation Surface emitting visible light emiting diode having ring-shaped electrode
JP2004146539A (ja) * 2002-10-23 2004-05-20 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
WO2005024961A1 (de) * 2003-08-29 2005-03-17 Osram Opto Semiconductors Gmbh Strahlungemittierendes halbleiterbauelement
DE10346606A1 (de) * 2003-08-29 2005-03-31 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement

Also Published As

Publication number Publication date
DE102005046190A1 (de) 2007-04-05
US8501513B2 (en) 2013-08-06
JP2009510738A (ja) 2009-03-12
TW200717880A (en) 2007-05-01
EP1929552B1 (de) 2009-11-04
TWI312205B (en) 2009-07-11
KR101278851B1 (ko) 2013-07-01
EP1929552A2 (de) 2008-06-11
US20090262773A1 (en) 2009-10-22
KR20080068675A (ko) 2008-07-23
CN101273468B (zh) 2010-05-19
DE502006005304D1 (de) 2009-12-17
WO2007087769A2 (de) 2007-08-09
CN101273468A (zh) 2008-09-24

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