WO2007092893A3 - Materials and methods for the manufacture of large crystal diamonds - Google Patents

Materials and methods for the manufacture of large crystal diamonds Download PDF

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Publication number
WO2007092893A3
WO2007092893A3 PCT/US2007/061785 US2007061785W WO2007092893A3 WO 2007092893 A3 WO2007092893 A3 WO 2007092893A3 US 2007061785 W US2007061785 W US 2007061785W WO 2007092893 A3 WO2007092893 A3 WO 2007092893A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
alloy
nickel
crystal substrate
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/061785
Other languages
French (fr)
Other versions
WO2007092893B1 (en
WO2007092893A2 (en
Inventor
Han H Nee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Target Technology LLC
Original Assignee
Target Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Target Technology LLC filed Critical Target Technology LLC
Priority to EP07763194A priority Critical patent/EP1996751A2/en
Priority to JP2008554487A priority patent/JP2009525944A/en
Publication of WO2007092893A2 publication Critical patent/WO2007092893A2/en
Publication of WO2007092893A3 publication Critical patent/WO2007092893A3/en
Publication of WO2007092893B1 publication Critical patent/WO2007092893B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Materials and methods are provided for forming single crystal diamond growth using microwave plasma chemical vapor deposition (CVD) process in partial vacuum with a gaseous mixture containing a methane/ hydrogen mixture with optional nitrogen, oxygen and xenon addition. The single crystal substrate can be formed by a modified directional solidification process starting with at least one of the following: pure nickel or a nickel alloy which includes cobalt, iron, or a combination thereof using a vacuum induction melting process. A surface of the single crystal substrate is coated using an electron beam evaporation device with pure iridium or an alloy of iridium and a component selected from the group consisting of iron, cobalt, nickel, molybdenum, rhenium and a combination thereof. The alloy coated single crystal substrate is positioned in a microwave plasma CVD reactor and upon being subjected to a biased enhanced nucleation treatment in the presence of a gaseous mixture of methane, hydrogen, and other optional gases with a biased voltage of negative 100 to 400 volts supports the growth of a large single crystal diamond on it's coated surface.
PCT/US2007/061785 2006-02-07 2007-02-07 Materials and methods for the manufacture of large crystal diamonds Ceased WO2007092893A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07763194A EP1996751A2 (en) 2006-02-07 2007-02-07 Materials and methods for the manufacture of large crystal diamonds
JP2008554487A JP2009525944A (en) 2006-02-07 2007-02-07 Materials and methods for producing large diamond crystals

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US77114006P 2006-02-07 2006-02-07
US60/771,140 2006-02-07
US78413806P 2006-03-20 2006-03-20
US60/784,138 2006-03-20
US86427806P 2006-11-03 2006-11-03
US60/864,278 2006-11-03

Publications (3)

Publication Number Publication Date
WO2007092893A2 WO2007092893A2 (en) 2007-08-16
WO2007092893A3 true WO2007092893A3 (en) 2008-03-20
WO2007092893B1 WO2007092893B1 (en) 2008-05-08

Family

ID=38345939

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/061785 Ceased WO2007092893A2 (en) 2006-02-07 2007-02-07 Materials and methods for the manufacture of large crystal diamonds

Country Status (5)

Country Link
US (1) US20080003447A1 (en)
EP (1) EP1996751A2 (en)
JP (1) JP2009525944A (en)
TW (1) TW200806826A (en)
WO (1) WO2007092893A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5066651B2 (en) * 2006-03-31 2012-11-07 今井 淑夫 Epitaxial diamond film base substrate manufacturing method and epitaxial diamond film manufacturing method using this base substrate
WO2009137020A1 (en) * 2008-05-05 2009-11-12 Carnegie Institution Of Washington Ultratough single crystal boron-doped diamond
US9602821B2 (en) * 2008-10-01 2017-03-21 Nvidia Corporation Slice ordering for video encoding
WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
JP2010159185A (en) * 2009-01-09 2010-07-22 Shin-Etsu Chemical Co Ltd Multilayer substrate and method for manufacturing the same, and diamond film and method for manufacturing the same
JP5913362B2 (en) 2010-12-23 2016-04-27 エレメント シックス リミテッド Controlling the doping of synthetic diamond materials
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
JP6142145B2 (en) * 2013-09-30 2017-06-07 並木精密宝石株式会社 Diamond substrate and method for manufacturing diamond substrate
US20150096709A1 (en) * 2013-10-08 2015-04-09 Honeywell International Inc. Process For Making A Turbine Wheel And Shaft Assembly
US9352391B2 (en) * 2013-10-08 2016-05-31 Honeywell International Inc. Process for casting a turbine wheel
JP6634573B2 (en) * 2014-06-09 2020-01-22 アダマンド並木精密宝石株式会社 Diamond substrate and method of manufacturing diamond substrate
EP3189870A4 (en) * 2014-09-04 2018-04-18 Terumo Kabushiki Kaisha Catheter
EP3213842A4 (en) * 2014-10-29 2018-10-24 Sumitomo Electric Industries, Ltd. Composite diamond body and composite diamond tool
SG10201505413VA (en) * 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
EP3330414A4 (en) * 2015-07-31 2019-02-20 Adamant Namiki Precision Jewel Co., Ltd. DIAMOND SUBSTRATE AND METHOD FOR PRODUCING DIAMOND SUBSTRATE
US20170066110A1 (en) * 2015-09-08 2017-03-09 Baker Hughes Incorporated Polycrystalline diamond, methods of forming same, cutting elements, and earth-boring tools
JP7077798B2 (en) * 2018-06-11 2022-05-31 日本電信電話株式会社 Mechanical oscillator and its manufacturing method
CN116855808A (en) * 2023-08-24 2023-10-10 承德天大钒业有限责任公司 A vanadium-aluminum alloy with high uniformity and its preparation method
CN117737688A (en) * 2023-11-22 2024-03-22 湖南新锋科技有限公司 High-density diamond coating composite material and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273708A (en) * 1992-06-23 1993-12-28 Howmet Corporation Method of making a dual alloy article
US5400738A (en) * 1989-03-07 1995-03-28 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
US5571603A (en) * 1994-02-25 1996-11-05 Sumitomo Electric Industries, Ltd. Aluminum nitride film substrate and process for producing same
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US6080378A (en) * 1996-09-05 2000-06-27 Kabushiki Kaisha Kobe Seiko Sho Diamond films and methods for manufacturing diamond films

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3728465B2 (en) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 Method for forming single crystal diamond film
US6060378A (en) * 1995-11-03 2000-05-09 Micron Technology, Inc. Semiconductor bonding pad for better reliability

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5400738A (en) * 1989-03-07 1995-03-28 Sumitomo Electric Industries, Ltd. Method for producing single crystal diamond film
US5273708A (en) * 1992-06-23 1993-12-28 Howmet Corporation Method of making a dual alloy article
US5571603A (en) * 1994-02-25 1996-11-05 Sumitomo Electric Industries, Ltd. Aluminum nitride film substrate and process for producing same
US6080378A (en) * 1996-09-05 2000-06-27 Kabushiki Kaisha Kobe Seiko Sho Diamond films and methods for manufacturing diamond films
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ASHFOLD ET AL.: "Thin film diamond by chemical vapour deposition methods", CHEMICAL SOCIETY REVIEWS, vol. 23, no. 1, February 1984 (1984-02-01), pages 21 - 30, XP008131513 *
YAN ET AL.: "Very high growth rate chemical vapor deposition of single-crystal diamond", PNAS, vol. 99, no. 20, 1 October 2002 (2002-10-01), pages 12523 - 12525, XP002572740 *

Also Published As

Publication number Publication date
TW200806826A (en) 2008-02-01
JP2009525944A (en) 2009-07-16
WO2007092893B1 (en) 2008-05-08
EP1996751A2 (en) 2008-12-03
WO2007092893A2 (en) 2007-08-16
US20080003447A1 (en) 2008-01-03

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