WO2007126690A3 - Phase change memory elements using self- aligned phase change material layers and methods of making and using same - Google Patents

Phase change memory elements using self- aligned phase change material layers and methods of making and using same Download PDF

Info

Publication number
WO2007126690A3
WO2007126690A3 PCT/US2007/007188 US2007007188W WO2007126690A3 WO 2007126690 A3 WO2007126690 A3 WO 2007126690A3 US 2007007188 W US2007007188 W US 2007007188W WO 2007126690 A3 WO2007126690 A3 WO 2007126690A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase change
same
change material
self
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/007188
Other languages
French (fr)
Other versions
WO2007126690A2 (en
Inventor
Jun Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP07753788A priority Critical patent/EP2005495B1/en
Priority to JP2009504200A priority patent/JP5360496B2/en
Priority to AT07753788T priority patent/ATE517441T1/en
Priority to CN2007800120270A priority patent/CN101416326B/en
Publication of WO2007126690A2 publication Critical patent/WO2007126690A2/en
Publication of WO2007126690A3 publication Critical patent/WO2007126690A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

A phase change memory element and method of forming the same. The memory element includes a substrate supporting a first electrode. An insulating material element is positioned over the first electrode, and a phase change material layer is formed over the first electrode and surrounding the insulating material element such that the phase change material layer has a lower surface that is in electrical communication with the first electrode. The memory element also has a second electrode in electrical communication with an upper surface of the phase change material layer.
PCT/US2007/007188 2006-04-04 2007-03-23 Phase change memory elements using self- aligned phase change material layers and methods of making and using same Ceased WO2007126690A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07753788A EP2005495B1 (en) 2006-04-04 2007-03-23 Phase change memory elements using self- aligned phase change material layers
JP2009504200A JP5360496B2 (en) 2006-04-04 2007-03-23 Phase change memory device using a self-aligned phase change material layer and methods of making and using the same.
AT07753788T ATE517441T1 (en) 2006-04-04 2007-03-23 PHASE CHANGE STORAGE ELEMENTS HAVING SELF-ALIGNED PHASE STORAGE MATERIAL LAYERS
CN2007800120270A CN101416326B (en) 2006-04-04 2007-03-23 Phase-change memory element using self-aligned phase-change material layer and methods of manufacturing and using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/396,616 2006-04-04
US11/396,616 US7812334B2 (en) 2006-04-04 2006-04-04 Phase change memory elements using self-aligned phase change material layers and methods of making and using same

Publications (2)

Publication Number Publication Date
WO2007126690A2 WO2007126690A2 (en) 2007-11-08
WO2007126690A3 true WO2007126690A3 (en) 2007-12-21

Family

ID=38565769

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/007188 Ceased WO2007126690A2 (en) 2006-04-04 2007-03-23 Phase change memory elements using self- aligned phase change material layers and methods of making and using same

Country Status (7)

Country Link
US (4) US7812334B2 (en)
EP (2) EP2005495B1 (en)
JP (1) JP5360496B2 (en)
KR (1) KR101067969B1 (en)
CN (1) CN101416326B (en)
AT (1) ATE517441T1 (en)
WO (1) WO2007126690A2 (en)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762894B1 (en) * 2006-04-14 2007-10-08 주식회사 하이닉스반도체 Phase change memory device and manufacturing method thereof
EP2018642A4 (en) 2006-05-12 2009-05-27 Advanced Tech Materials Low temperature deposition of phase change memory materials
US7638357B2 (en) 2006-08-25 2009-12-29 Micron Technology, Inc. Programmable resistance memory devices and systems using the same and methods of forming the same
US7479671B2 (en) * 2006-08-29 2009-01-20 International Business Machines Corporation Thin film phase change memory cell formed on silicon-on-insulator substrate
US7560723B2 (en) * 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
JP2008103541A (en) * 2006-10-19 2008-05-01 Renesas Technology Corp Phase change memory and manufacturing method thereof
CN101495672B (en) 2006-11-02 2011-12-07 高级技术材料公司 Antimony and germanium compounds useful for CVD/ALD of metal thin films
US20080164453A1 (en) * 2007-01-07 2008-07-10 Breitwisch Matthew J Uniform critical dimension size pore for pcram application
TWI347670B (en) * 2007-02-01 2011-08-21 Promos Technologies Inc Phase-change memory and fabrication method thereof
US20080270811A1 (en) * 2007-04-26 2008-10-30 Super Talent Electronics Inc. Fast Suspend-Resume of Computer Motherboard Using Phase-Change Memory
US7961506B2 (en) 2008-02-05 2011-06-14 Micron Technology, Inc. Multiple memory cells with rectifying device
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
KR20100043470A (en) * 2008-10-20 2010-04-29 주식회사 하이닉스반도체 Bottom electrode contact structure of phase change random access memory device and method of manufacturing the same
KR20100076274A (en) * 2008-12-26 2010-07-06 주식회사 하이닉스반도체 Phase changeable memory device and method of manufacturing the same
US8410468B2 (en) 2009-07-02 2013-04-02 Advanced Technology Materials, Inc. Hollow GST structure with dielectric fill
US8198124B2 (en) * 2010-01-05 2012-06-12 Micron Technology, Inc. Methods of self-aligned growth of chalcogenide memory access device
KR101706809B1 (en) 2010-03-26 2017-02-15 엔테그리스, 아이엔씨. Germanium antimony telluride materials and devices incorporating same
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US8097537B2 (en) * 2010-05-25 2012-01-17 Micron Technology, Inc. Phase change memory cell structures and methods
JP5380481B2 (en) * 2011-03-07 2014-01-08 株式会社東芝 Storage device and manufacturing method thereof
KR102117124B1 (en) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. Phase change memory structure comprising phase change alloy center-filled with dielectric material
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
GB2515568B (en) 2013-06-28 2016-05-18 Ibm Resistive random-access memory cells
GB2515567A (en) * 2013-06-28 2014-12-31 Ibm Phase-Change memory cells
US9564585B1 (en) * 2015-09-03 2017-02-07 HGST Netherlands B.V. Multi-level phase change device
US9570169B1 (en) 2016-06-03 2017-02-14 International Business Machines Corporation Resistive memory device
US10978639B2 (en) 2018-08-14 2021-04-13 Newport Fab, Llc Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
US10937960B2 (en) 2018-08-14 2021-03-02 Newport Fab, Llc Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
US11031689B2 (en) 2018-08-14 2021-06-08 Newport Fab, Llc Method for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US11031555B2 (en) 2018-08-14 2021-06-08 Newport Fab, Llc Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits
US10862477B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
US10770389B2 (en) 2018-08-14 2020-09-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals
US10862032B2 (en) 2018-08-14 2020-12-08 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch
US10944052B2 (en) 2018-08-14 2021-03-09 Newport Fab, Llc Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
US11050022B2 (en) * 2018-08-14 2021-06-29 Newport Fab, Llc Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
US10615338B2 (en) 2018-08-14 2020-04-07 Newport Fab, Llc Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches
US11196401B2 (en) 2018-08-14 2021-12-07 Newport Fab, Llc Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
US10916540B2 (en) 2018-08-14 2021-02-09 Newport Fab, Llc Device including PCM RF switch integrated with group III-V semiconductors
US11158794B2 (en) 2018-08-14 2021-10-26 Newport Fab, Llc High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non-volatile RF switches
US10833267B2 (en) 2018-10-26 2020-11-10 International Business Machines Corporation Structure and method to form phase change memory cell with self- align top electrode contact
US11812676B2 (en) * 2020-03-24 2023-11-07 International Business Machines Corporation Multi-terminal phase change memory device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124503A1 (en) * 2000-07-14 2004-07-01 Harshfield Steven T. Memory elements and methods for making same
US20050212037A1 (en) * 2004-03-09 2005-09-29 Cay-Uwe Pinnow Semiconductor memory cell, method for fabricating it and semiconductor memory device
US20060006374A1 (en) * 2004-06-30 2006-01-12 Heon Yong Chang Phase-change memory device and method of manufacturing the same
EP1677372A1 (en) * 2004-12-30 2006-07-05 STMicroelectronics S.r.l. Phase change memory and manufacturing method thereof

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023009B2 (en) * 1997-10-01 2006-04-04 Ovonyx, Inc. Electrically programmable memory element with improved contacts
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6764894B2 (en) * 2001-08-31 2004-07-20 Ovonyx, Inc. Elevated pore phase-change memory
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6580144B2 (en) * 2001-09-28 2003-06-17 Hewlett-Packard Development Company, L.P. One time programmable fuse/anti-fuse combination based memory cell
US6992365B2 (en) * 2001-10-12 2006-01-31 Ovonyx, Inc. Reducing leakage currents in memories with phase-change material
KR100437458B1 (en) * 2002-05-07 2004-06-23 삼성전자주식회사 Phase change memory cells and methods of fabricating the same
KR100481866B1 (en) * 2002-11-01 2005-04-11 삼성전자주식회사 Phase changeable memory device and method of fabricating the same
US6869883B2 (en) * 2002-12-13 2005-03-22 Ovonyx, Inc. Forming phase change memories
US7307267B2 (en) * 2002-12-19 2007-12-11 Nxp B.V. Electric device with phase change material and parallel heater
US7029978B2 (en) * 2003-08-04 2006-04-18 Intel Corporation Controlling the location of conduction breakdown in phase change memories
KR100568109B1 (en) * 2003-11-24 2006-04-05 삼성전자주식회사 Phase change memory device and its formation method
US7009694B2 (en) * 2004-05-28 2006-03-07 International Business Machines Corporation Indirect switching and sensing of phase change memory cells
US7608503B2 (en) * 2004-11-22 2009-10-27 Macronix International Co., Ltd. Side wall active pin memory and manufacturing method
US7348590B2 (en) * 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
US7214958B2 (en) * 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
KR100657956B1 (en) * 2005-04-06 2006-12-14 삼성전자주식회사 Multi-value resistor memory device and its manufacture and operation method
JP4560818B2 (en) * 2005-07-22 2010-10-13 エルピーダメモリ株式会社 Semiconductor device and manufacturing method thereof
CN100379047C (en) * 2005-07-28 2008-04-02 复旦大学 A kind of preparation method of nano phase change memory unit
US7332735B2 (en) * 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7251154B2 (en) * 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7589364B2 (en) * 2005-11-02 2009-09-15 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
US7560723B2 (en) * 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7504653B2 (en) * 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7888155B2 (en) * 2009-03-16 2011-02-15 Industrial Technology Research Institute Phase-change memory element and method for fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124503A1 (en) * 2000-07-14 2004-07-01 Harshfield Steven T. Memory elements and methods for making same
US20050212037A1 (en) * 2004-03-09 2005-09-29 Cay-Uwe Pinnow Semiconductor memory cell, method for fabricating it and semiconductor memory device
US20060006374A1 (en) * 2004-06-30 2006-01-12 Heon Yong Chang Phase-change memory device and method of manufacturing the same
EP1677372A1 (en) * 2004-12-30 2006-07-05 STMicroelectronics S.r.l. Phase change memory and manufacturing method thereof

Also Published As

Publication number Publication date
US20130248810A1 (en) 2013-09-26
EP2325911A2 (en) 2011-05-25
JP2009532898A (en) 2009-09-10
EP2005495B1 (en) 2011-07-20
KR101067969B1 (en) 2011-09-26
CN101416326B (en) 2011-08-17
US20110227029A1 (en) 2011-09-22
JP5360496B2 (en) 2013-12-04
CN101416326A (en) 2009-04-22
KR20090005131A (en) 2009-01-12
US20090166605A1 (en) 2009-07-02
EP2325911B1 (en) 2015-08-19
US7812334B2 (en) 2010-10-12
ATE517441T1 (en) 2011-08-15
EP2325911A3 (en) 2011-07-06
US20070246766A1 (en) 2007-10-25
US8674334B2 (en) 2014-03-18
EP2005495A2 (en) 2008-12-24
US7968862B2 (en) 2011-06-28
WO2007126690A2 (en) 2007-11-08

Similar Documents

Publication Publication Date Title
WO2007126690A3 (en) Phase change memory elements using self- aligned phase change material layers and methods of making and using same
TW200735281A (en) Phase change memory devices and their methods of fabrication
TW200705616A (en) Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
TW200741916A (en) Low resistance and inductance backside through vias and methods of fabricating same
TW200701453A (en) Manufacturing methods for thin film fuse phase change ram
WO2008051674A3 (en) Electrical fuse and method of making the same
TWI268573B (en) Semiconductor device and method for fabricating the same
TW200504924A (en) Inductor with high quality factor and method of fabricating the same
WO2008057671A3 (en) Electronic device including a conductive structure extending through a buried insulating layer
WO2010002516A3 (en) Low-cost double structure substrates and methods for their manufacture
WO2009142982A3 (en) Metal gate structure and method of manufacturing same
WO2009008931A3 (en) Inverted variable resistance memory cell and method of making the same
WO2007109487A3 (en) Semiconductor device incorporating fluorine into gate dielectric
WO2006037933A3 (en) Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized
TW200625529A (en) Contact hole structures and contact structures and fabrication methods thereof
TW200731512A (en) Phase changeable memory cell array region and method of forming the same
TW200625532A (en) Semiconductor device having mim element
WO2009076509A3 (en) Semiconductor structure and method of manufacture
TW200741961A (en) Semiconductor devices and fabrication method thereof
WO2005122236A3 (en) Semiconductor device with reduced contact resistance
TW200802747A (en) The structure of embedded chip packaging and the fabricating method thereof
WO2008027209A3 (en) Programmable resistance memory devices and systems using the same and methods of forming the same
TW200737498A (en) Method of manufacturing non-volatile memory element
WO2004038809A3 (en) Formation of contacts on semiconductor substrates
TW200707710A (en) Connecting structure and method for manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07753788

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2009504200

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 200780012027.0

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2007753788

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: KR