WO2007149677A3 - Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages - Google Patents

Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages Download PDF

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Publication number
WO2007149677A3
WO2007149677A3 PCT/US2007/069711 US2007069711W WO2007149677A3 WO 2007149677 A3 WO2007149677 A3 WO 2007149677A3 US 2007069711 W US2007069711 W US 2007069711W WO 2007149677 A3 WO2007149677 A3 WO 2007149677A3
Authority
WO
WIPO (PCT)
Prior art keywords
reprogramming
real time
read
volatile memory
threshold voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/069711
Other languages
French (fr)
Other versions
WO2007149677A2 (en
Inventor
Nima Mokhlesi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/425,794 external-priority patent/US7489549B2/en
Priority claimed from US11/425,790 external-priority patent/US7486561B2/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Priority to AT07797758T priority Critical patent/ATE515771T1/en
Priority to CN2007800094967A priority patent/CN101405813B/en
Priority to JP2009516619A priority patent/JP4994447B2/en
Priority to EP07797758A priority patent/EP2030205B1/en
Publication of WO2007149677A2 publication Critical patent/WO2007149677A2/en
Publication of WO2007149677A3 publication Critical patent/WO2007149677A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

A set of non-volatile storage elements undergoes initial programming, after which a reprogramming, with higher verify levels, is performed in non-real time, such as when a control enters a standby mode, when no other read or write tasks are pending. The reprogramming can program pages in the set one at a time, stopping at a page boundary when another read or write task is pending, and restarting when the control become available again. Status flags can be provided to identify whether a page and/or the set has completed the reprogramming. In another aspect, a higher pass voltage is applied to unselected word lines during the reprogramming. In another aspect, an error count is determined using a default set of read voltages, and an alternative set of read voltages is selected if the count exceeds a threshold.
PCT/US2007/069711 2006-06-22 2007-05-25 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages Ceased WO2007149677A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT07797758T ATE515771T1 (en) 2006-06-22 2007-05-25 METHOD FOR NON-REAL TIME PROGRAMMING OF A NON-VOLATILE MEMORY TO ACHIEVE A FIXED DISTRIBUTION OF THRESHOLD VOLTAGE
CN2007800094967A CN101405813B (en) 2006-06-22 2007-05-25 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
JP2009516619A JP4994447B2 (en) 2006-06-22 2007-05-25 Non-real-time reprogramming of non-volatile memory so that threshold voltage distribution is tight
EP07797758A EP2030205B1 (en) 2006-06-22 2007-05-25 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/425,794 US7489549B2 (en) 2006-06-22 2006-06-22 System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US11/425,794 2006-06-22
US11/425,790 US7486561B2 (en) 2006-06-22 2006-06-22 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US11/425,790 2006-06-22

Publications (2)

Publication Number Publication Date
WO2007149677A2 WO2007149677A2 (en) 2007-12-27
WO2007149677A3 true WO2007149677A3 (en) 2008-05-22

Family

ID=38834212

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/069711 Ceased WO2007149677A2 (en) 2006-06-22 2007-05-25 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages

Country Status (6)

Country Link
EP (1) EP2030205B1 (en)
JP (1) JP4994447B2 (en)
KR (1) KR101075253B1 (en)
AT (1) ATE515771T1 (en)
TW (1) TWI337746B (en)
WO (1) WO2007149677A2 (en)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
ITRM20080114A1 (en) * 2008-02-29 2009-09-01 Micron Technology Inc COMPENSATION OF CHARGE LOSS DURING THE PROGRAMMING OF A MEMORY DEVICE.
US7924614B2 (en) 2009-01-19 2011-04-12 Macronix International Co., Ltd. Memory and boundary searching method thereof
US8504759B2 (en) * 2009-05-26 2013-08-06 Micron Technology, Inc. Method and devices for controlling power loss
JP2011159364A (en) * 2010-02-02 2011-08-18 Toshiba Corp Nonvolatile semiconductor memory device and method for driving the same
JP2011198419A (en) * 2010-03-19 2011-10-06 Toshiba Corp Nonvolatile semiconductor memory device and write method thereof
KR20110126408A (en) 2010-05-17 2011-11-23 삼성전자주식회사 Nonvolatile Memory Device, Memory System Including It And Its Program Method
JP2012190523A (en) 2011-03-14 2012-10-04 Toshiba Corp Nonvolatile semiconductor storage device
WO2014061055A1 (en) 2012-10-15 2014-04-24 Hitachi, Ltd. Storage sysyem which includes non-volatile semiconductor storage medium, and storage control method of storage system
US9257203B2 (en) 2012-12-06 2016-02-09 Micron Technology, Inc. Setting a default read signal based on error correction
KR102175039B1 (en) * 2013-06-25 2020-11-05 삼성전자주식회사 Method of writing data in non-volatile memory device
KR20160032910A (en) 2014-09-17 2016-03-25 에스케이하이닉스 주식회사 Memory system and operating method of memory system
JP6453718B2 (en) * 2015-06-12 2019-01-16 東芝メモリ株式会社 Semiconductor memory device and memory system
US10460816B2 (en) 2017-12-08 2019-10-29 Sandisk Technologies Llc Systems and methods for high-performance write operations
FR3163658A1 (en) 2024-06-24 2025-12-26 IFP Energies Nouvelles Injection of hydrogen produced by water electrolysis onto a biofuel production unit obtained by thermochemical conversion of lignocellulosic biomass with CO2 valorization by reverse gas-water reaction.
FR3163657A1 (en) 2024-06-24 2025-12-26 IFP Energies Nouvelles Injection of hydrogen produced by water electrolysis onto a sustainable fuel production unit obtained by thermochemical conversion of a carbon-based plastic feedstock with CO2 valorization by reverse water gas reaction.

Citations (4)

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US6137729A (en) * 1997-12-29 2000-10-24 Samsung Electronics Co., Ltd. Method for erasing memory cells in a flash memory device
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6657891B1 (en) * 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
US20050088890A1 (en) * 2002-11-29 2005-04-28 Yasuhiko Matsunaga NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3930074B2 (en) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ Semiconductor integrated circuit and data processing system
JP3957985B2 (en) * 2001-03-06 2007-08-15 株式会社東芝 Nonvolatile semiconductor memory device
JP4410188B2 (en) * 2004-11-12 2010-02-03 株式会社東芝 Data writing method for semiconductor memory device
US7212436B2 (en) * 2005-02-28 2007-05-01 Micron Technology, Inc. Multiple level programming in a non-volatile memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137729A (en) * 1997-12-29 2000-10-24 Samsung Electronics Co., Ltd. Method for erasing memory cells in a flash memory device
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6657891B1 (en) * 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
US20050088890A1 (en) * 2002-11-29 2005-04-28 Yasuhiko Matsunaga NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
TAE-SUNG JUNG ET AL: "A 117-mm 3.3-V Only 128-Mb Multilevel NAND Flash Memory for Mass Storage Applications", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 31, no. 11, November 1996 (1996-11-01), XP011060360, ISSN: 0018-9200 *
TON DITEWIG ET AL: "An embedded 1.2V-read flash memory module in a 0.18/spl mu/m logic process", SOLID-STATE CIRCUITS CONFERENCE, 2001. DIGEST OF TECHNICAL PAPERS. ISSCC. 2001 IEEE INTERNATIONAL FEB. 5-7, 2001, PISCATAWAY, NJ, USA,IEEE, 5 February 2001 (2001-02-05), pages 34 - 35,425, XP010536168, ISBN: 0-7803-6608-5 *

Also Published As

Publication number Publication date
WO2007149677A2 (en) 2007-12-27
EP2030205A2 (en) 2009-03-04
EP2030205B1 (en) 2011-07-06
TWI337746B (en) 2011-02-21
KR20090007298A (en) 2009-01-16
TW200814084A (en) 2008-03-16
ATE515771T1 (en) 2011-07-15
KR101075253B1 (en) 2011-10-20
JP2009541909A (en) 2009-11-26
JP4994447B2 (en) 2012-08-08

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