WO2007149846A3 - Optically controlled silicon carbide and related wide-bandgap transistors and thyristors - Google Patents

Optically controlled silicon carbide and related wide-bandgap transistors and thyristors Download PDF

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Publication number
WO2007149846A3
WO2007149846A3 PCT/US2007/071543 US2007071543W WO2007149846A3 WO 2007149846 A3 WO2007149846 A3 WO 2007149846A3 US 2007071543 W US2007071543 W US 2007071543W WO 2007149846 A3 WO2007149846 A3 WO 2007149846A3
Authority
WO
WIPO (PCT)
Prior art keywords
thyristors
silicon carbide
polytype
circuits
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/071543
Other languages
French (fr)
Other versions
WO2007149846A2 (en
Inventor
Michael S Mazzola
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semisouth Laboratories Inc
Original Assignee
Semisouth Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Laboratories Inc filed Critical Semisouth Laboratories Inc
Priority to KR1020097001008A priority Critical patent/KR101396115B1/en
Priority to CA002654456A priority patent/CA2654456A1/en
Priority to NZ572661A priority patent/NZ572661A/en
Priority to AU2007261051A priority patent/AU2007261051B2/en
Priority to CN200780022905.7A priority patent/CN101473451B/en
Priority to EP07784480A priority patent/EP2030251A2/en
Priority to JP2009516674A priority patent/JP5439172B2/en
Publication of WO2007149846A2 publication Critical patent/WO2007149846A2/en
Publication of WO2007149846A3 publication Critical patent/WO2007149846A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.
PCT/US2007/071543 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors Ceased WO2007149846A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020097001008A KR101396115B1 (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide bandgap transistors and thyristors
CA002654456A CA2654456A1 (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
NZ572661A NZ572661A (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
AU2007261051A AU2007261051B2 (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
CN200780022905.7A CN101473451B (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide bandgap transistors and thyristor components
EP07784480A EP2030251A2 (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
JP2009516674A JP5439172B2 (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide bandgap transistors and thyristors

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80513906P 2006-06-19 2006-06-19
US60/805,139 2006-06-19
US11/764,606 2007-06-18
US11/764,606 US8193537B2 (en) 2006-06-19 2007-06-18 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors

Publications (2)

Publication Number Publication Date
WO2007149846A2 WO2007149846A2 (en) 2007-12-27
WO2007149846A3 true WO2007149846A3 (en) 2008-06-12

Family

ID=38834304

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/071543 Ceased WO2007149846A2 (en) 2006-06-19 2007-06-19 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors

Country Status (9)

Country Link
US (3) US8193537B2 (en)
EP (1) EP2030251A2 (en)
JP (1) JP5439172B2 (en)
KR (1) KR101396115B1 (en)
CN (1) CN102290480B (en)
AU (1) AU2007261051B2 (en)
CA (1) CA2654456A1 (en)
NZ (1) NZ572661A (en)
WO (1) WO2007149846A2 (en)

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US20100276699A1 (en) * 2009-05-04 2010-11-04 University Of South Carolina Silicon Carbide and Related Wide Bandgap Semiconductor Based Optically-Controlled Power Switching Devices
WO2010129804A1 (en) 2009-05-07 2010-11-11 Lawrence Livermore National Security, Llc Photoconductive switch package
US8130023B2 (en) * 2009-11-23 2012-03-06 Northrop Grumman Systems Corporation System and method for providing symmetric, efficient bi-directional power flow and power conditioning
GB201116780D0 (en) * 2011-09-29 2011-11-09 Secr Defence Imaging sensor
US8536617B2 (en) 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
JP6086648B2 (en) * 2012-03-12 2017-03-01 国立研究開発法人産業技術総合研究所 Phototransistor and imaging device
US9142339B2 (en) * 2012-06-26 2015-09-22 Lawrence Livermore National Security, Llc Compact optical transconductance varistor
DE102012216114A1 (en) * 2012-09-12 2014-03-13 Bayerische Motoren Werke Aktiengesellschaft Current zero crossing at inverter
US9704622B2 (en) * 2014-03-07 2017-07-11 Lawrence Livermore National Security, Llc Laser-controlled optical transconductance varistor system
WO2015179718A1 (en) * 2014-05-21 2015-11-26 Applied Physical Electronics, L.C. Construction and optical control of bipolar junction transistors and thyristors
CN105450209B (en) * 2015-12-17 2018-10-30 中国科学院上海硅酸盐研究所 A kind of the controlled cleaving method and its device of heavy current pulse
CN106130524B (en) * 2016-06-14 2019-08-23 圣邦微电子（北京）股份有限公司 Adaptive Ringing Quenching Gate Drive Circuit and Driver
US10535741B2 (en) * 2017-01-28 2020-01-14 Gangfeng Ye GaN lateral vertical JFET with regrown channel and dielectric gate
US10989903B2 (en) * 2018-02-26 2021-04-27 Washington State University Modular scanning confocal optical profile microscopy with digital imaging processing
US11522542B2 (en) 2019-06-03 2022-12-06 Lawrence Livermore National Security, Llc Wide bandgap optical switch circuit breaker
US11804839B1 (en) * 2020-01-28 2023-10-31 Government Of The United States As Represented By The Secretary Of The Air Force Integrated trigger photoconductive semiconductor switch
JP7453615B2 (en) * 2020-01-30 2024-03-21 株式会社Flosfia Semiconductor equipment and semiconductor systems
JP7453618B2 (en) * 2020-03-19 2024-03-21 株式会社Flosfia Energization mechanism and its energization method
JP7539630B2 (en) * 2020-01-30 2024-08-26 株式会社Flosfia Semiconductor device and semiconductor system
JP7453614B2 (en) * 2020-01-30 2024-03-21 株式会社Flosfia Semiconductor equipment and semiconductor systems
JP7511833B2 (en) * 2020-03-19 2024-07-08 株式会社Flosfia Semiconductor element, semiconductor device, and semiconductor system
JP7515138B2 (en) * 2020-03-19 2024-07-12 株式会社Flosfia Semiconductor element, semiconductor device, and semiconductor system
CN114361287B (en) * 2022-01-04 2024-02-23 中国工程物理研究院流体物理研究所 A silicon-based light-triggered multi-gate semiconductor switch chip for high-temperature environments
TWI822438B (en) * 2022-11-02 2023-11-11 台亞半導體股份有限公司 Silicon carbide opto-thyristor and method for manufacturing the same
WO2024206282A1 (en) * 2023-03-28 2024-10-03 Epirus, Inc. Systems and methods for high-voltage power integrated circuits
US12176454B1 (en) * 2023-06-05 2024-12-24 Massachusetts Institute Of Technology Optically controlled semiconductor devices

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US4207583A (en) * 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
JPS5625743A (en) * 1979-08-08 1981-03-12 Matsushita Electric Ind Co Ltd Electrophotographic receptor
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
US6191458B1 (en) * 1994-02-24 2001-02-20 General Electric Company Silicon carbide integrated circuits
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Also Published As

Publication number Publication date
WO2007149846A2 (en) 2007-12-27
US8853710B2 (en) 2014-10-07
US20120214275A1 (en) 2012-08-23
KR20090033233A (en) 2009-04-01
US8455328B2 (en) 2013-06-04
CN102290480B (en) 2015-05-20
JP5439172B2 (en) 2014-03-12
AU2007261051B2 (en) 2013-05-30
EP2030251A2 (en) 2009-03-04
JP2009542004A (en) 2009-11-26
NZ572661A (en) 2012-03-30
US20130320199A1 (en) 2013-12-05
CN102290480A (en) 2011-12-21
US20070292074A1 (en) 2007-12-20
KR101396115B1 (en) 2014-06-17
US8193537B2 (en) 2012-06-05
CA2654456A1 (en) 2007-12-27
AU2007261051A1 (en) 2007-12-27

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