WO2008067815A3 - Use of thermoelectric materials for low temperature thermoelectric purposes - Google Patents

Use of thermoelectric materials for low temperature thermoelectric purposes Download PDF

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Publication number
WO2008067815A3
WO2008067815A3 PCT/DK2007/000530 DK2007000530W WO2008067815A3 WO 2008067815 A3 WO2008067815 A3 WO 2008067815A3 DK 2007000530 W DK2007000530 W DK 2007000530W WO 2008067815 A3 WO2008067815 A3 WO 2008067815A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric
purposes
low temperature
vacancy
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DK2007/000530
Other languages
French (fr)
Other versions
WO2008067815A8 (en
WO2008067815A2 (en
Inventor
Anders Bentien
Simon Johnsen
Georg Kent Hellerup Madsen
Bo Brummerstedt Iversen
Frank Steglich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Aarhus Universitet
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Aarhus Universitet
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP06125354A external-priority patent/EP1930960A1/en
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV, Aarhus Universitet filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority to US12/517,470 priority Critical patent/US20100139730A1/en
Priority to EP07817924A priority patent/EP2092579A2/en
Publication of WO2008067815A2 publication Critical patent/WO2008067815A2/en
Publication of WO2008067815A8 publication Critical patent/WO2008067815A8/en
Publication of WO2008067815A3 publication Critical patent/WO2008067815A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2σ) of 25 μW/cmK2 or more at a temperature of 150 K or less. The invention also relates to thermoelectric materials per se falling within the above definition.
PCT/DK2007/000530 2006-12-04 2007-12-04 Use of thermoelectric materials for low temperature thermoelectric purposes Ceased WO2008067815A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/517,470 US20100139730A1 (en) 2006-12-04 2007-12-04 Use of thermoelectric materials for low temperature thermoelectric purposes
EP07817924A EP2092579A2 (en) 2006-12-04 2007-12-04 Use of thermoelectric materials for low temperature thermoelectric purposes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP06125354A EP1930960A1 (en) 2006-12-04 2006-12-04 Use of thermoelectric materials for low temperature thermoelectric purposes
EP06125354.8 2006-12-04
EP06126488 2006-12-19
EP06126488.3 2006-12-19

Publications (3)

Publication Number Publication Date
WO2008067815A2 WO2008067815A2 (en) 2008-06-12
WO2008067815A8 WO2008067815A8 (en) 2008-08-21
WO2008067815A3 true WO2008067815A3 (en) 2008-12-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DK2007/000530 Ceased WO2008067815A2 (en) 2006-12-04 2007-12-04 Use of thermoelectric materials for low temperature thermoelectric purposes

Country Status (3)

Country Link
US (1) US20100139730A1 (en)
EP (1) EP2092579A2 (en)
WO (1) WO2008067815A2 (en)

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MX2011011843A (en) 2009-05-12 2011-12-08 Jostens Inc Gold alloys.
JP2013219218A (en) * 2012-04-10 2013-10-24 Hitachi Ltd Thermoelectric conversion material, thermoelectric conversion element, and thermoelectric conversion module
US9005522B2 (en) 2012-08-30 2015-04-14 Jostens, Inc. Silver alloy
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CN104157779A (en) * 2014-01-26 2014-11-19 海安县申菱电器制造有限公司 High-efficient thermoelectric conversion device
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CN104124332B (en) * 2014-05-27 2017-09-01 浙江大学 A kind of p-type FeNbTiSb thermoelectric materials of the high figure of merit and preparation method thereof
WO2015180034A1 (en) * 2014-05-27 2015-12-03 浙江大学 P-type fenbtisb thermoelectric material with high optimal value, and preparation method therefor
CN104681706B (en) * 2015-02-12 2017-11-17 浙江大学 P-type FeNbHfSb thermoelectric materials of the high figure of merit and preparation method thereof
GB201615272D0 (en) * 2016-09-08 2016-10-26 Johnson Matthey Plc Method
JP6865951B2 (en) * 2016-11-10 2021-04-28 国立研究開発法人物質・材料研究機構 P-type thermoelectric semiconductor, its manufacturing method and thermoelectric power generation element using it
US10937939B2 (en) 2016-12-26 2021-03-02 National University Corporation Nagoya University Thermoelectric conversion material and thermoelectric conversion element
CN106848050B (en) * 2016-12-27 2019-01-15 宁波工程学院 A kind of Ag-Ga-Zn-Te quaternary p-type thermoelectric semiconductor and its preparation process
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KR102121434B1 (en) 2017-05-15 2020-06-10 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
KR102123041B1 (en) * 2017-06-07 2020-06-15 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
KR102121436B1 (en) * 2017-06-27 2020-06-10 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
WO2019004613A1 (en) * 2017-06-30 2019-01-03 주식회사 엘지화학 Chalcogen compound, method for preparing same, and thermoelectric device comprising same
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CN109455678B (en) * 2018-12-29 2022-02-15 六盘水师范学院 A method for rapidly preparing FeTe2 at normal pressure
JP7754487B2 (en) * 2019-04-26 2025-10-15 国立大学法人 東京大学 Thermoelectric conversion element and thermoelectric conversion device
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CN113292342A (en) * 2021-04-20 2021-08-24 上海交通大学 Copper-silver based chalcogenide thermoelectric material and preparation and application thereof
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CN116555656B (en) * 2023-05-05 2025-06-06 天津市弘磡科技有限公司 A special alloy bipolar rare earth electric heating material and its preparation method
CN117700228B (en) * 2023-12-13 2026-03-17 郑州大学 An intrinsically low thermal conductivity N-type Pb-Bi-S-based thermoelectric material and its preparation method
CN118274987B (en) * 2024-04-09 2024-10-22 重庆材料研究院有限公司 Material of sensor coupling wire and integrated multipoint temperature sensor prepared from material
CN118574492B (en) * 2024-05-22 2025-11-25 上海大学 A vacancy-filled Hessler thermoelectric material and its preparation method

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US5747728A (en) * 1993-08-03 1998-05-05 California Institute Of Technology Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation
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US5747728A (en) * 1993-08-03 1998-05-05 California Institute Of Technology Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation
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Non-Patent Citations (4)

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Title
BENTIEN A ET AL: "Colossal Seebeck coefficient in strongly correlated semiconductor FeSb2; Colossal Seebeck coefficient in strongly correlated semiconductor Fesb2", EUROPHYSICS LETTERS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, FR, vol. 80, no. 1, 1 October 2007 (2007-10-01), pages 17008, XP020115586, ISSN: 0295-5075 *
BENTIEN A ET AL: "Experimental and theoretical investigations of strongly correlated FeSb2-xSnx", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) APS THROUGH AIP USA, vol. 74, no. 20, 15 November 2006 (2006-11-15), pages 205105 - 1, XP002437248, ISSN: 1098-0121 *
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Also Published As

Publication number Publication date
WO2008067815A8 (en) 2008-08-21
EP2092579A2 (en) 2009-08-26
US20100139730A1 (en) 2010-06-10
WO2008067815A2 (en) 2008-06-12

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