WO2008090666A1 - 積層型光電変換装置及びその製造方法 - Google Patents

積層型光電変換装置及びその製造方法 Download PDF

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Publication number
WO2008090666A1
WO2008090666A1 PCT/JP2007/072207 JP2007072207W WO2008090666A1 WO 2008090666 A1 WO2008090666 A1 WO 2008090666A1 JP 2007072207 W JP2007072207 W JP 2007072207W WO 2008090666 A1 WO2008090666 A1 WO 2008090666A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
intermediate layer
laminate type
conversion layers
photoelectric converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/072207
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Nasuno
Noriyoshi Kohama
Takanori Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to US12/523,633 priority Critical patent/US8258596B2/en
Priority to EP07831937.3A priority patent/EP2110859B1/en
Publication of WO2008090666A1 publication Critical patent/WO2008090666A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

　光電変換層の間に中間層を設けて上記入射光量制御効果を得るとともに、中間層と半導体層の界面におけるキャリア再結合を低減し、光電変換効率を向上させた積層型光電変換装置及びその製造方法を提供する。 　本発明の積層型光電変換装置は、ｐｉｎ構造を有する複数のシリコン系光電変換層を重ねて備え、隣接する少なくとも一対の前記光電変換層は、窒化シリコンからなる中間層を挟持し、前記一対の前記光電変換層は、互いに電気的に接続されており、前記光電変換層の一部であり前記中間層と接するｐ型シリコン系半導体層は窒素原子を含有する。
PCT/JP2007/072207 2007-01-23 2007-11-15 積層型光電変換装置及びその製造方法 Ceased WO2008090666A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/523,633 US8258596B2 (en) 2007-01-23 2007-11-15 Stacked photoelectric conversion device and method for producing the same
EP07831937.3A EP2110859B1 (en) 2007-01-23 2007-11-15 Laminate type photoelectric converter and method for fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007012851A JP2008181965A (ja) 2007-01-23 2007-01-23 積層型光電変換装置及びその製造方法
JP2007-012851 2007-01-23

Publications (1)

Publication Number Publication Date
WO2008090666A1 true WO2008090666A1 (ja) 2008-07-31

Family

ID=39644244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072207 Ceased WO2008090666A1 (ja) 2007-01-23 2007-11-15 積層型光電変換装置及びその製造方法

Country Status (4)

Country Link
US (1) US8258596B2 (ja)
EP (1) EP2110859B1 (ja)
JP (1) JP2008181965A (ja)
WO (1) WO2008090666A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110120536A1 (en) * 2009-11-20 2011-05-26 Dapeng Wang Roughness control of a wavelength selective reflector layer for thin film solar applications
US20120042934A1 (en) * 2009-03-03 2012-02-23 Yoshiyuki Nasuno Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same
EP2293347A3 (en) * 2009-09-02 2012-07-25 Kisco Photovoltaic device and method for manufacturing the same
EP2356696A4 (en) * 2009-05-06 2013-05-15 Thinsilicon Corp PHOTOVOLTAIC CELLS AND METHOD FOR REINFORCING LIGHT DETECTION IN SEMICONDUCTOR LAYERED TABLES

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US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US7741144B2 (en) 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
US8895842B2 (en) 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
WO2010048537A2 (en) 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device
KR20110106889A (ko) * 2008-12-19 2011-09-29 어플라이드 머티어리얼스, 인코포레이티드 박막 및 웨이퍼 기반의 태양 전지 분야용 미세결정질 실리콘 합금
JP5283588B2 (ja) * 2008-12-26 2013-09-04 京セラ株式会社 太陽電池
WO2010117548A2 (en) * 2009-04-06 2010-10-14 Applied Materials, Inc. High quality tco-silicon interface contact structure for high efficiency thin film silicon solar cells
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US9136422B1 (en) 2012-01-19 2015-09-15 Alta Devices, Inc. Texturing a layer in an optoelectronic device for improved angle randomization of light
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
TW201123481A (en) * 2009-12-29 2011-07-01 Auria Solar Co Ltd Solar cell and manufacturing method thereof
JP2011159858A (ja) * 2010-02-02 2011-08-18 Sony Corp 固体撮像装置およびその製造方法、電子機器
JP5525298B2 (ja) * 2010-03-18 2014-06-18 シャープ株式会社 導電性窒化シリコン膜の製造方法
US9123840B2 (en) * 2011-01-27 2015-09-01 Kyocera Corporation Solar cell element manufacturing method, solar cell element, and solar cell module
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
JP2014055111A (ja) * 2013-12-11 2014-03-27 Sharp Corp 導電性窒化シリコン膜、導電性窒化シリコン膜積層体、および光電変換装置
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell
KR101901068B1 (ko) * 2017-08-09 2018-09-20 고려대학교 산학협력단 탠덤태양전지소자
KR102322176B1 (ko) * 2018-08-23 2021-11-04 고려대학교 산학협력단 탠덤태양전지소자
KR102229748B1 (ko) * 2018-08-23 2021-03-18 고려대학교 산학협력단 탠덤태양전지소자

Citations (4)

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JP2003124481A (ja) 2001-10-11 2003-04-25 Mitsubishi Heavy Ind Ltd 太陽電池
JP2003347572A (ja) * 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP2004128083A (ja) * 2002-09-30 2004-04-22 Mitsubishi Heavy Ind Ltd タンデム型太陽電池
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JP2003124481A (ja) 2001-10-11 2003-04-25 Mitsubishi Heavy Ind Ltd 太陽電池
JP2003347572A (ja) * 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP2004128083A (ja) * 2002-09-30 2004-04-22 Mitsubishi Heavy Ind Ltd タンデム型太陽電池
JP2004363580A (ja) * 2003-05-13 2004-12-24 Kyocera Corp 光電変換装置および光発電装置

Non-Patent Citations (1)

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Title
See also references of EP2110859A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120042934A1 (en) * 2009-03-03 2012-02-23 Yoshiyuki Nasuno Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same
US8962983B2 (en) * 2009-03-03 2015-02-24 Sharp Kabushiki Kaisha Laminated body having semiconductor layer and layer thickness measurement portion, and thin-film photoelectric conversion device and integrated thin-film solar cell having the same
EP2356696A4 (en) * 2009-05-06 2013-05-15 Thinsilicon Corp PHOTOVOLTAIC CELLS AND METHOD FOR REINFORCING LIGHT DETECTION IN SEMICONDUCTOR LAYERED TABLES
EP2293347A3 (en) * 2009-09-02 2012-07-25 Kisco Photovoltaic device and method for manufacturing the same
US20110120536A1 (en) * 2009-11-20 2011-05-26 Dapeng Wang Roughness control of a wavelength selective reflector layer for thin film solar applications

Also Published As

Publication number Publication date
US20100059847A1 (en) 2010-03-11
US8258596B2 (en) 2012-09-04
EP2110859B1 (en) 2013-08-14
EP2110859A4 (en) 2010-07-14
EP2110859A1 (en) 2009-10-21
JP2008181965A (ja) 2008-08-07

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