WO2008093699A1 - 磁気検出装置及びその製造方法 - Google Patents

磁気検出装置及びその製造方法 Download PDF

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Publication number
WO2008093699A1
WO2008093699A1 PCT/JP2008/051354 JP2008051354W WO2008093699A1 WO 2008093699 A1 WO2008093699 A1 WO 2008093699A1 JP 2008051354 W JP2008051354 W JP 2008051354W WO 2008093699 A1 WO2008093699 A1 WO 2008093699A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistance effect
interlayer coupling
fixed resistive
resistive element
magnetic sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/051354
Other languages
English (en)
French (fr)
Inventor
Shinji Sugihara
Hideto Ando
Shinichi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2008556126A priority Critical patent/JP5015966B2/ja
Priority to EP08704136A priority patent/EP2112522A4/en
Publication of WO2008093699A1 publication Critical patent/WO2008093699A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

【課題】特に、正負逆符号の層間結合磁界Ｈｉｎを有する第１磁気抵抗効果素子と第２磁気抵抗効果素子のＴＣＲ差を小さくできるとともに、各磁気抵抗効果素子に直列接続される固定抵抗素子を同じ製造プロセスで形成できる磁気検出装置及びその製造方法を提供することを目的としている。 【解決手段】　第１磁気抵抗効果素子２３と第２磁気抵抗効果素子２７は非磁性導電層６１、６４の膜厚を除いて同じ膜構成で形成されている。前記第１磁気検出素子２３と第２磁気抵抗効果素子２７とで非磁性導電層６１、６４は異なる膜厚で形成され、前記第１磁気抵抗効果素子２３は正値の第１層間結合磁界Ｈｉｎ１を有し第２磁気抵抗効果素子２７は負値の第２層間結合磁界Ｈｉｎ２を有する。また第１固定抵抗素子２４と第２固定抵抗素子２８とは同じ膜構成で形成される。
PCT/JP2008/051354 2007-02-02 2008-01-30 磁気検出装置及びその製造方法 Ceased WO2008093699A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008556126A JP5015966B2 (ja) 2007-02-02 2008-01-30 磁気検出装置及びその製造方法
EP08704136A EP2112522A4 (en) 2007-02-02 2008-01-30 MAGNETIC SENSOR AND METHOD FOR ITS MANUFACTURE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-023853 2007-02-02
JP2007023853 2007-02-02

Publications (1)

Publication Number Publication Date
WO2008093699A1 true WO2008093699A1 (ja) 2008-08-07

Family

ID=39674008

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051354 Ceased WO2008093699A1 (ja) 2007-02-02 2008-01-30 磁気検出装置及びその製造方法

Country Status (4)

Country Link
US (1) US8198886B2 (ja)
EP (1) EP2112522A4 (ja)
JP (1) JP5015966B2 (ja)
WO (1) WO2008093699A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012044460A (ja) * 2010-08-19 2012-03-01 Canon Inc 電子機器
JP2017512353A (ja) * 2013-12-31 2017-05-18 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 薄型磁気抵抗イメージセンサアレイ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49109566U (ja) * 1973-01-11 1974-09-19
JPH11307840A (ja) * 1998-04-24 1999-11-05 Hitachi Ltd 磁場測定装置
JP2004029007A (ja) * 2002-05-14 2004-01-29 Hewlett-Packard Development Co Lp 磁界検出センサ
JP2006208255A (ja) 2005-01-31 2006-08-10 Alps Electric Co Ltd 角度検出センサ
JP2006253562A (ja) 2005-03-14 2006-09-21 Mitsubishi Electric Corp 磁気抵抗効果素子、これを用いた磁界検出器、および磁気抵抗効果素子の製造方法
JP2006266777A (ja) 2005-03-23 2006-10-05 Yamaha Corp 巨大磁気抵抗効果素子を備える磁気センサ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US7005958B2 (en) * 2002-06-14 2006-02-28 Honeywell International Inc. Dual axis magnetic sensor
US7777607B2 (en) * 2004-10-12 2010-08-17 Allegro Microsystems, Inc. Resistor having a predetermined temperature coefficient

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49109566U (ja) * 1973-01-11 1974-09-19
JPH11307840A (ja) * 1998-04-24 1999-11-05 Hitachi Ltd 磁場測定装置
JP2004029007A (ja) * 2002-05-14 2004-01-29 Hewlett-Packard Development Co Lp 磁界検出センサ
JP2006208255A (ja) 2005-01-31 2006-08-10 Alps Electric Co Ltd 角度検出センサ
JP2006253562A (ja) 2005-03-14 2006-09-21 Mitsubishi Electric Corp 磁気抵抗効果素子、これを用いた磁界検出器、および磁気抵抗効果素子の製造方法
JP2006266777A (ja) 2005-03-23 2006-10-05 Yamaha Corp 巨大磁気抵抗効果素子を備える磁気センサ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2112522A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012044460A (ja) * 2010-08-19 2012-03-01 Canon Inc 電子機器
JP2017512353A (ja) * 2013-12-31 2017-05-18 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 薄型磁気抵抗イメージセンサアレイ
US10371761B2 (en) 2013-12-31 2019-08-06 MultiDimension Technology Co., Ltd. Low profile magnetoresistive imaging sensor array

Also Published As

Publication number Publication date
EP2112522A1 (en) 2009-10-28
US8198886B2 (en) 2012-06-12
JP5015966B2 (ja) 2012-09-05
EP2112522A4 (en) 2011-03-16
JPWO2008093699A1 (ja) 2010-05-20
US20090045810A1 (en) 2009-02-19

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