WO2008102484A1 - 膜質評価方法およびその装置ならびに薄膜デバイスの製造システム - Google Patents

膜質評価方法およびその装置ならびに薄膜デバイスの製造システム Download PDF

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Publication number
WO2008102484A1
WO2008102484A1 PCT/JP2007/071178 JP2007071178W WO2008102484A1 WO 2008102484 A1 WO2008102484 A1 WO 2008102484A1 JP 2007071178 W JP2007071178 W JP 2007071178W WO 2008102484 A1 WO2008102484 A1 WO 2008102484A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
device manufacturing
manufacturing system
evaluating
crystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/071178
Other languages
English (en)
French (fr)
Inventor
Satoshi Sakai
Yoichiro Tsumura
Masami Iida
Kohei Kawazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to EP07830912.7A priority Critical patent/EP2124037A4/en
Priority to CN2007800475278A priority patent/CN101568821B/zh
Priority to US12/517,200 priority patent/US7907276B2/en
Publication of WO2008102484A1 publication Critical patent/WO2008102484A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8914—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the material examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Photovoltaic Devices (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

　作業員の負担を軽減させるとともに、製造効率を向上させることを目的とする。薄膜シリコン系デバイスに用いる結晶質シリコン膜に光を照射し、結晶質シリコン膜で反射された反射光を検出し、検出した反射光の輝度に係るパラメータを計測し、該輝度に係るパラメータが予め設定されている適正範囲内であるか否かに応じて、該結晶質シリコン膜の膜質評価を行う。
PCT/JP2007/071178 2007-02-20 2007-10-31 膜質評価方法およびその装置ならびに薄膜デバイスの製造システム Ceased WO2008102484A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07830912.7A EP2124037A4 (en) 2007-02-20 2007-10-31 METHOD AND DEVICE FOR FILM QUALITY ASSESSMENT AND THIN FILM DEVICE MANUFACTURING SYSTEM
CN2007800475278A CN101568821B (zh) 2007-02-20 2007-10-31 膜质评价方法及其装置、以及薄膜设备的制造系统
US12/517,200 US7907276B2 (en) 2007-02-20 2007-10-31 Film quality evaluation method, apparatus therefor, and production system for thin-film device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007039596A JP4241843B2 (ja) 2007-02-20 2007-02-20 膜質評価方法およびその装置ならびに薄膜製造システム
JP2007-039596 2007-02-20

Publications (1)

Publication Number Publication Date
WO2008102484A1 true WO2008102484A1 (ja) 2008-08-28

Family

ID=39709767

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/071178 Ceased WO2008102484A1 (ja) 2007-02-20 2007-10-31 膜質評価方法およびその装置ならびに薄膜デバイスの製造システム

Country Status (5)

Country Link
US (1) US7907276B2 (ja)
EP (1) EP2124037A4 (ja)
JP (1) JP4241843B2 (ja)
CN (1) CN101568821B (ja)
WO (1) WO2008102484A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN117437235A (zh) * 2023-12-21 2024-01-23 四川新康意众申新材料有限公司 基于图像处理的塑料薄膜质量检测方法

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* Cited by examiner, † Cited by third party
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JP2009212148A (ja) * 2008-02-29 2009-09-17 Mitsubishi Heavy Ind Ltd 結晶質シリコン膜の膜質計測装置、結晶質シリコン膜の膜質計測方法、及び結晶質シリコン膜の膜質評価方法
US8018586B2 (en) * 2008-10-23 2011-09-13 Applied Materials, Inc. Metrology of thin film devices using an addressable micromirror array
WO2010091025A2 (en) * 2009-02-04 2010-08-12 Applied Materials, Inc. Metrology and inspection suite for a solar production line
US8902428B2 (en) * 2012-03-15 2014-12-02 Applied Materials, Inc. Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
JP5882801B2 (ja) * 2012-03-16 2016-03-09 株式会社神戸製鋼所 半導体結晶性評価装置および該方法
US10018565B2 (en) * 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
US11557048B2 (en) 2015-11-16 2023-01-17 Applied Materials, Inc. Thickness measurement of substrate using color metrology
US10565701B2 (en) 2015-11-16 2020-02-18 Applied Materials, Inc. Color imaging for CMP monitoring
CN106770315A (zh) * 2016-11-30 2017-05-31 浙江宜佳新材料股份有限公司 一种胶膜纸的胶膜层激光监测装置
WO2020124451A1 (zh) * 2018-12-19 2020-06-25 深圳先进技术研究院 薄膜涂层色度分析设备及其应用、薄膜涂层分类方法
US11100628B2 (en) 2019-02-07 2021-08-24 Applied Materials, Inc. Thickness measurement of substrate using color metrology
CN111220544A (zh) * 2020-01-19 2020-06-02 河海大学 一种镜片质量检测装置及检测方法
US12322659B2 (en) 2021-03-04 2025-06-03 Applied Materials, Inc. Pixel classification of film non-uniformity based on processing of substrate images
JP2023060769A (ja) * 2021-10-18 2023-04-28 国立大学法人電気通信大学 ペロブスカイト層の結晶状態検査装置
WO2025205383A1 (ja) * 2024-03-29 2025-10-02 東京エレクトロン株式会社 測定方法、測定装置及び基板処理装置
KR102838886B1 (ko) * 2024-12-17 2025-07-28 유펙스(주) 미세다공막 결정화도 및 결정화도 분포 인라인 검사장치

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JP2001110864A (ja) * 1999-10-06 2001-04-20 Seiko Epson Corp 多結晶性半導体膜の検査方法および多結晶性半導体膜の検査装置
JP2002026348A (ja) 2000-07-05 2002-01-25 Mitsubishi Heavy Ind Ltd シリコン系薄膜光起電力素子及びその製造方法
JP2002176009A (ja) * 2000-12-06 2002-06-21 Hitachi Ltd レーザアニール結晶化ｉｎ−ｓｉｔｕ解析装置
JP2003234288A (ja) * 2002-02-07 2003-08-22 Sony Corp 多結晶半導体膜と半導体素子の製造方法及び製造装置
JP2006112939A (ja) * 2004-10-15 2006-04-27 Nikon Corp 欠陥検査装置

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US5757474A (en) * 1993-05-10 1998-05-26 Midwest Research Institute System for characterizing semiconductor materials and photovoltaic devices through calibration
JP2002359194A (ja) * 2001-06-01 2002-12-13 Toshiba Corp 膜質測定方法とその装置および薄膜処理装置
US6994750B2 (en) * 2001-09-10 2006-02-07 Matsushita Electric Industrial Co., Ltd. Film evaluating method, temperature measuring method, and semiconductor device manufacturing method
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JP4247535B2 (ja) * 2003-11-11 2009-04-02 Ｈｏｙａ株式会社 ロードアンロード方式用磁気ディスク、ロードアンロード方式用磁気ディスクの製造方法及びロードアンロード方式用磁気ディスクの評価方法
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Publication number Priority date Publication date Assignee Title
JP2001110864A (ja) * 1999-10-06 2001-04-20 Seiko Epson Corp 多結晶性半導体膜の検査方法および多結晶性半導体膜の検査装置
JP2002026348A (ja) 2000-07-05 2002-01-25 Mitsubishi Heavy Ind Ltd シリコン系薄膜光起電力素子及びその製造方法
JP2002176009A (ja) * 2000-12-06 2002-06-21 Hitachi Ltd レーザアニール結晶化ｉｎ−ｓｉｔｕ解析装置
JP2003234288A (ja) * 2002-02-07 2003-08-22 Sony Corp 多結晶半導体膜と半導体素子の製造方法及び製造装置
JP2006112939A (ja) * 2004-10-15 2006-04-27 Nikon Corp 欠陥検査装置

Non-Patent Citations (1)

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Title
See also references of EP2124037A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117437235A (zh) * 2023-12-21 2024-01-23 四川新康意众申新材料有限公司 基于图像处理的塑料薄膜质量检测方法
CN117437235B (zh) * 2023-12-21 2024-03-12 四川新康意众申新材料有限公司 基于图像处理的塑料薄膜质量检测方法

Also Published As

Publication number Publication date
US7907276B2 (en) 2011-03-15
US20100067010A1 (en) 2010-03-18
CN101568821A (zh) 2009-10-28
JP4241843B2 (ja) 2009-03-18
EP2124037A4 (en) 2013-04-10
EP2124037A1 (en) 2009-11-25
JP2008205189A (ja) 2008-09-04
CN101568821B (zh) 2012-12-26

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